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31.发明申请公开(公告)号：US20050052925A1
公开(公告)日：2005-03-10
申请号：US10927052
申请日：2004-08-27
CPC分类号： G11C11/413 , G11C5/14 , G11C7/22 , G11C8/08 , G11C2207/2227
摘要： A leakage current of the MOS transistor of a power control section at a standby time is drastically reduced and the reduction of the consumption power is achieved. A memory module is provided with power control sections. When either of the memory mats is not selected, the power control sections stop the power supply voltage to a non-selected memory mat, a word driver, an input-output circuit, a control circuit and an output circuit. At the standby time of the memory module, the power control section stops a power supply to power control sections, a control circuit, a predecoder circuit, and an input circuit. In this manner, the leakage current of the MOS transistor of the power control sections at the standby time can be drastically reduced.
摘要翻译： 功率控制部的MOS晶体管的待机时的漏电流急剧下降，能够实现消耗功率的降低。 存储器模块具有功率控制部分。 当没有选择任何存储器垫时，功率控制部分将电源电压停止到未选择的存储器垫，字驱动器，输入输出电路，控制电路和输出电路。 在存储器模块的待机时，功率控制部分停止对功率控制部分，控制电路，预解码器电路和输入电路的电源。 以这种方式，可以显着降低在待机时功率控制部分的MOS晶体管的漏电流。
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公开(公告)号：US20150212570A1
公开(公告)日：2015-07-30
申请号：US14424145
申请日：2012-09-03
申请人： Masaki Hamamoto , Masanao Yamaoka
发明人： Masaki Hamamoto , Masanao Yamaoka
IPC分类号： G06F1/32
CPC分类号： G06F1/3243 , Y02D10/152
摘要： In the related art, even in computation of an application which has a resistance to a computation error in a computer system, since the computation error is accurately corrected, there is a problem that a power supply voltage or an operating frequency for realizing lower power or a faster speed cannot be variable in a large manner.In the invention, it is possible to solve the above-described problem by a computer system which includes a first processor and a second processor. In the first processor, at least one of an operating frequency or an operating voltage is variable. A detecting module which is operated by the second processor detects an error of the first processor. A determining module which is operated by the second processor determines at least one of the operating frequency or the operating voltage of the first processor.
摘要翻译： 在现有技术中，即使在对计算机系统中具有计算误差的抵抗力的应用的计算中，由于计算误差被精确地校正，所以存在用于实现较低功率的电源电压或工作频率的问题， 更快的速度不能大的变化。 在本发明中，可以通过包括第一处理器和第二处理器的计算机系统来解决上述问题。 在第一处理器中，工作频率或工作电压中的至少一个是可变的。 由第二处理器操作的检测模块检测第一处理器的错误。 由第二处理器操作的确定模块确定第一处理器的工作频率或工作电压中的至少一个。
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公开(公告)号：US08508968B2
公开(公告)日：2013-08-13
申请号：US13461848
申请日：2012-05-02
CPC分类号： H01L25/0657 , G11C5/02 , H01L25/18 , H01L2224/16 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/13091 , H01L2924/15311 , H01L2924/00 , H01L2224/05599
摘要： The need for mediation operation is eliminated by adoption of a connection topology in which a circuit for executing one transmission (TR—00T), and a circuit for executing a plurality of receptions (TR—10R, TR—20R, TR—30R) are connected to one penetration-electrode group (for example, TSVGL—0). In order to implement the connection topology even in the case of piling up a plurality of LSIs one after another, in particular, a programmable memory element for designating respective penetration-electrode ports for use in transmit, or for us in receive, and address allocation of the respective penetration-electrode ports is mounted in stacked LSIs.
摘要翻译： 通过采用其中执行一次发送的电路（TR-00T）和用于执行多个接收（TR-10R，TR-20R，TR-30R）的电路的连接拓扑结构来消除对中介操作的需要 连接到一个穿透电极组（例如，TSVGL-0）。 为了实现连接拓扑，即使在堆叠多个LSI的情况下，尤其是用于指定用于发送的各个穿透电极端口或用于接收的可编程存储器元件，以及地址分配 各个贯通电极端口安装在堆叠的LSI中。
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公开(公告)号：US07995377B2
公开(公告)日：2011-08-09
申请号：US12624272
申请日：2009-11-23
申请人： Masanao Yamaoka , Takayuki Kawahara
发明人： Masanao Yamaoka , Takayuki Kawahara
CPC分类号： G11C11/412
摘要： An object of the present invention is to provide a technique of reducing the power consumption of an entire low power consumption SRAM LSI circuit employing scaled-down transistors and of increasing the stability of read and write operations on the memory cells by reducing the subthreshold leakage current and the leakage current flowing from the drain electrode to the substrate electrode.Another object of the present invention is to provide a technique of preventing an increase in the number of transistors in a memory cell and thereby preventing an increase in the cell area.Still another object of the present invention is to provide a technique of ensuring stable operation of an SRAM memory cell made up of SOI or FD-SOI transistors having a BOX layer by controlling the potentials of the wells under the BOX layers of the drive transistors.
摘要翻译： 本发明的目的是提供一种降低使用按比例缩小的晶体管的整个低功耗SRAM LSI电路的功耗的技术，并且通过减少亚阈值泄漏电流来增加对存储单元的读和写操作的稳定性 以及从漏极流到基板电极的漏电流。 本发明的另一个目的是提供一种防止存储单元中的晶体管数量增加从而防止单元区域增加的技术。 本发明的另一个目的是提供一种通过控制驱动晶体管的BOX层下的阱的电位来确保由具有BOX层的SOI或FD-SOI晶体管构成的SRAM存储单元的稳定工作的技术。
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公开(公告)号：US07961545B2
公开(公告)日：2011-06-14
申请号：US12629981
申请日：2009-12-03
IPC分类号： G11C5/14
CPC分类号： G11C11/419 , G11C5/146 , G11C5/147 , G11C11/4125 , G11C11/417 , G11C2207/2227
摘要： A logic circuit in a system LSI is provided with a power switch so as to cut off the switch at the time of standby, reducing leakage current. At the same time, an SRAM circuit of the system LSI controls a substrate bias to reduce leakage current.
摘要翻译： 系统LSI中的逻辑电路设置有电源开关，以便在待机时切断开关，从而减少漏电流。 同时，系统LSI的SRAM电路控制衬底偏置以减少漏电流。
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公开(公告)号：US07911221B2
公开(公告)日：2011-03-22
申请号：US12335331
申请日：2008-12-15
申请人： Masanao Yamaoka , Kenichi Osada
发明人： Masanao Yamaoka , Kenichi Osada
IPC分类号： H03K19/00
CPC分类号： H03K19/00346
摘要： A speed performance measurement circuit that may perform speed performance measurement is provided between a first logic circuit and a second logic circuit. The speed performance measurement circuit includes a first flip flop that stores first data, a first delay circuit that delays the first data and generates second data, and a second flip flop that stores the second data. Furthermore, the speed performance measurement circuit includes a first comparator circuit that compares output of the first flip flop to output of the second flip flop, and a third flip flop that stores output data from the first comparator circuit in accordance with timing of the first clock signal. Data in a normal path is compared to data in a path delayed by a certain time to measure speed, and power voltage of a circuit is determined based on such comparison. Thus, change in speed with respect to power voltage in a critical path can be measured.
摘要翻译： 可以在第一逻辑电路和第二逻辑电路之间提供可执行速度性能测量的速度性能测量电路。 速度性能测量电路包括存储第一数据的第一触发器，延迟第一数据并产生第二数据的第一延迟电路和存储第二数据的第二触发器。 此外，速度性能测量电路包括第一比较器电路，其将第一触发器的输出与第二触发器的输出进行比较;以及第三触发器，其根据第一时钟的定时存储来自第一比较器电路的输出数据 信号。 将正常路径中的数据与延迟一定时间的路径中的数据进行比较以测量速度，并且基于这样的比较确定电路的功率电压。 因此，可以测量关键路径中的功率电压的速度变化。
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37.发明授权公开(公告)号：US07808045B2
公开(公告)日：2010-10-05
申请号：US12767548
申请日：2010-04-26
申请人： Takayuki Kawahara , Masanao Yamaoka
发明人： Takayuki Kawahara , Masanao Yamaoka
IPC分类号： H01L23/62
CPC分类号： H01L27/1203 , H01L29/78645 , H01L29/78648
摘要： The present invention provides a high speed and low power consumption LSI operable in a wide temperature range in which a MOS transistor having back gates is used specifically according to operating characteristics of a circuit.In the LSI, an FD-SOI structure having an embedded oxide film layer is used and a lower semiconductor region of the embedded oxide film layer is used as a back gate. A voltage for back gates in the logic circuits having a small load in the logic circuit block is controlled in response to activation of the block from outside of the block. Transistors, in which the gate and the back gate are connected to each other, are used for the circuit generating the back gate driving signal, and logic circuits having a heavy load such as circuit block output section, and the back gates are directly controlled according to the gate input signal.
摘要翻译： 本发明提供一种可在宽温度范围内工作的高速，低功耗的LSI，其具有根据电路的工作特性专门使用具有后栅的MOS晶体管。 在LSI中，使用具有嵌入的氧化膜层的FD-SOI结构，并且将埋入的氧化膜层的下半导体区域用作后栅。 在逻辑电路块中具有小负载的逻辑电路中的后门的电压响应于块外部的激活而被控制。 栅极和背栅彼此连接的晶体管用于产生背栅极驱动信号的电路，以及具有诸如电路块输出部分的重负载的逻辑电路，并且后门直接根据 到门输入信号。
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公开(公告)号：US07474584B2
公开(公告)日：2009-01-06
申请号：US11833190
申请日：2007-08-02
IPC分类号： G11C5/14
CPC分类号： G11C11/419 , G11C5/146 , G11C5/147 , G11C11/4125 , G11C11/417 , G11C2207/2227
摘要： A logic circuit in a system LSI is provided with a power switch so as to cut off the switch at the time of standby, reducing leakage current. At the same time, an SRAM circuit of the system LSI controls a substrate bias to reduce leakage current.
摘要翻译： 系统LSI中的逻辑电路设置有电源开关，以便在待机时切断开关，从而减少漏电流。 同时，系统LSI的SRAM电路控制衬底偏置以减少漏电流。
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公开(公告)号：US20080203403A1
公开(公告)日：2008-08-28
申请号：US11960680
申请日：2007-12-19
CPC分类号： H01L21/84 , H01L27/105 , H01L27/1052 , H01L27/11526 , H01L27/11546 , H01L27/1203 , H01L27/153
摘要： The semiconductor integrated circuit (1) has a memory (4) and a logic circuit (5), which are mixedly palletized on a silicon substrate (2). The memory includes a partially-depleted type nMOS (6) having an SOI structure and formed on UTB (3). The partially-depleted type nMOS has a backgate region (14) under UTB, to which a voltage can be applied independently of a corresponding gate terminal. The logic circuit includes an nMOS (7) and a pMOS (8), and both are of a fully-depleted type, formed on UTB and have an SOI structure. The fully-depleted type nMOS and pMOS have backgate regions (14, 22) under respective UTBs, to which voltages can be applied independently of the corresponding gate terminals
摘要翻译： 半导体集成电路（1）具有在硅衬底（2）上混合堆垛的存储器（4）和逻辑电路（5）。 存储器包括具有SOI结构并形成在UTB（3）上的部分耗尽型nMOS（6）。 部分耗尽型nMOS在UTB之下具有背栅区域（14），独立于对应的栅极端子可以施加电压。 逻辑电路包括nMOS（7）和pMOS（8），并且它们都是完全耗尽型的，形成在UTB上并具有SOI结构。 完全耗尽型nMOS和pMOS在相应的UTB下具有背栅区域（14,22），可以独立于对应的栅极端子施加电压
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40.发明授权公开(公告)号：US07397693B2
公开(公告)日：2008-07-08
申请号：US11657026
申请日：2007-01-24
IPC分类号： G11C11/00
CPC分类号： G11C11/417 , G11C11/412 , Y10S257/903
摘要： A memory using an SRAM memory cell intended for low-voltage operation is designed to decrease the threshold value of MOS transistors constituting the memory cell without substantial decrease in the static noise margin, which is the operational margin of the memory cell. To this end, a voltage Vdd′ higher than a power supply voltage Vdd of a power supply line for peripheral circuits is supplied from a power supply line for memory cells as a power supply voltage for memory cells. Since the conductance of driver MOS transistors is in-creased, the threshold voltage of the MOS transistors within the memory cells can be reduced without reducing the static noise margin. Further the ratio of width between the driver MOS transistor and a transfer MOS transistor can be set to 1, thereby allowing a reduction in the memory cell area.
摘要翻译： 使用用于低电压操作的SRAM存储单元的存储器被设计为降低构成存储器单元的MOS晶体管的阈值，而不会显着降低静态噪声容限，这是存储单元的操作余量。 为此，作为存储单元的电源电压，从用于存储单元的电源线提供高于外围电路用电源线的电源电压Vdd的电压Vdd'。 由于驱动器MOS晶体管的电导被增加，所以可以在不降低静态噪声容限的情况下减小存储单元内的MOS晶体管的阈值电压。 此外，可以将驱动器MOS晶体管和转移MOS晶体管之间的宽度比设置为1，从而允许存储单元区域的减小。
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