Semiconductor light emitting element
    32.
    发明申请
    Semiconductor light emitting element 失效
    半导体发光元件

    公开(公告)号:US20070023768A1

    公开(公告)日:2007-02-01

    申请号:US11285388

    申请日:2005-11-23

    IPC分类号: H01L33/00

    摘要: A semiconductor light emitting element has a first conductive-type cladding layer, an undoped active layer, a second conductive-type cladding layer, and a second conductive-type current spreading layer that are formed on a first conductive-type semiconductor substrate. The second conductive-type cladding layer has a first dopant suppressing layer formed at a portion in the second conductive-type cladding layer, the portion being not in contact with the active layer. The first dopant suppressing layer has a dopant concentration lower than a region in the vicinity of the first dopant suppressing layer.

    摘要翻译: 半导体发光元件具有形成在第一导电型半导体基板上的第一导电型包覆层,未掺杂的有源层,第二导电型覆盖层和第二导电型电流扩展层。 第二导电型包覆层具有形成在第二导电型包覆层的一部分上的第一掺杂剂抑制层,该部分不与有源层接触。 第一掺杂剂抑制层的掺杂剂浓度低于第一掺杂剂抑制层附近的区域。

    Rare-earth bonded magnet, material and method for manufacturing the same
    33.
    发明授权
    Rare-earth bonded magnet, material and method for manufacturing the same 失效
    稀土粘结磁体,材料及其制造方法

    公开(公告)号:US5393445A

    公开(公告)日:1995-02-28

    申请号:US176645

    申请日:1994-01-03

    IPC分类号: H01F1/053 H01F1/057 H01F1/059

    摘要: A material for a rare-earth bonded magnet is prepared by coating a rare-earth magnetic powder with a heat resisting addition polymerizable thermosetting resin consisting essentially of a monomer or polymer of 2,2-bis(cyanatophenyl) propane in an amount of not more than 2 wt % based on the weight of the magnetic powder. The oxidation of the rare-earth magnetic powder is thereby prevented or retarded by triazine rings formed in the coating film of the heat resisting addition polymerizable thermosetting resin. A rare-earth bonded magnet having improved heat resistance is prepared by agglomerating the coated rare-earth magnetic powder with a binder. The heat resistance of the bonded magnet is further improved by curing the heat resisting addition polymerizable thermosetting resin in a vacuum and by adding an organometallic salt as a metallic catalyst, to thereby improve the integrity of the coating film.

    摘要翻译: 通过用基本上由2,2-双(氰基苯基)丙烷的单体或聚合物组成的耐热性可加聚热固性树脂涂覆稀土磁性粉末,制备稀土粘结磁体的材料,其量不超过 超过2重量%,基于磁粉的重量。 由此,可以通过在耐热性可加聚热固性树脂的涂膜中形成的三嗪环来防止或延缓稀土类磁粉的氧化。 通过将涂覆的稀土磁性粉末与粘合剂团聚来制备具有改善的耐热性的稀土粘结磁体。 通过在真空中固化耐热性可加聚热固性树脂并通过添加作为金属催化剂的有机金属盐,进一步提高粘结磁体的耐热性,从而提高涂膜的完整性。

    Manufacturing method of semiconductor photonic device substrate
    35.
    发明授权
    Manufacturing method of semiconductor photonic device substrate 有权
    半导体光子器件衬底的制造方法

    公开(公告)号:US08367431B2

    公开(公告)日:2013-02-05

    申请号:US12766684

    申请日:2010-04-23

    IPC分类号: G01R31/26

    摘要: In a manufacturing method of a semiconductor photonic device substrate, before multi-layer films different in material composition are successively and gradually crystal-grown in one chamber, an inter-layer growth rate model showing a relation in growth rate between each layer is defined, a growth rate of a film corresponding to at least one or more layers is obtained by actual crystal growth using an individual substrate, a growth rate of a film corresponding to other layers is estimated from the obtained growth rate by the inter-layer growth rate model, and a growth time is determined in accordance with a film thickness of each layer of the semiconductor photonic device substrate based on the actually obtained growth rate and the estimated growth rate. These steps are carried out by using a computer system connected to an MOCVD equipment, and then, a crystal growth of the semiconductor photonic device substrate is performed.

    摘要翻译: 在半导体光子器件衬底的制造方法中,在不同材料组成的多层膜在一个室中连续逐渐晶体生长的情况下,定义表示各层之间的生长速度关系的层间生长速率模型, 通过使用单个基板的实际晶体生长获得对应于至少一个或多个层的膜的生长速率,通过层间生长速率模型从获得的生长速率估计与其它层相对应的膜的生长速率 根据实际获得的生长速度和估计的生长速度,根据半导体光子器件基板的各层的膜厚确定生长时间。 这些步骤通过使用连接到MOCVD设备的计算机系统进行,然后执行半导体光子器件衬底的晶体生长。

    Semiconductor light emitting device
    36.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号:US07723731B2

    公开(公告)日:2010-05-25

    申请号:US11907895

    申请日:2007-10-18

    IPC分类号: H01L33/00

    摘要: A first conductivity type cladding layer 2, a first side multilayer 9, an active layer 4, a second side multilayer 10, and a second conductivity type cladding layer 3 are provided in a semiconductor light emitting device. The first side multilayer 9 is provided between the first conductivity type cladding layer 2 and the active layer 4, and the second side multilayer 10 is provided between the active layer 4 and the second conductivity type cladding layer 3. Each of the multilayer 9, 10 is transparent with respect to the light generated at the active layer 4, having a bandgap larger than that of the active layer 4, and lattice-matched with the active layer 4.

    摘要翻译: 在半导体发光器件中设置第一导电型包层2,第一侧多层9,有源层4,第二侧多层10和第二导电型包覆层3。 在第一导电型包覆层2和有源层4之间设置第一侧面叠层体9,在有源层4和第二导电型覆盖层3之间设置第二侧面层叠体10。 相对于在有源层4处产生的光具有比有源层4的带隙更大的透光性,并且与有源层4晶格匹配。

    Pyrazinecarboxamide Derivatives and Plant Disease Controlling Agents Containing the Same
    37.
    发明申请
    Pyrazinecarboxamide Derivatives and Plant Disease Controlling Agents Containing the Same 有权
    吡嗪甲酰胺衍生物和含有其的植物病害防治剂

    公开(公告)号:US20090233934A1

    公开(公告)日:2009-09-17

    申请号:US12086582

    申请日:2006-12-21

    IPC分类号: A01N43/58 C07D237/24

    摘要: The present invention provides the compounds represented by the general formula (I): [wherein X is a halogen atom or an (C1-C3)alkyl group which may be substituted with a halogen atom(s); Y is a hydrogen or halogen atom, or a cyano, a (C1-C3)alkyl or (C1-C3)alkoxy group; R is a hydrogen or halogen atom, a cyano group, or a (C1-C6)alkyl, (C2-C6)alkenyl group, (C2-C6)alkynyl, (C1-C6)alkoxy, (C2-C6)alkenyloxy, (C2-C6)alkynyloxy, (C1-C6)alkylthio, (C1-C6)alkylsulfinyl or (C1-C6)alkylsulfonyl group which may be substituted with a halogen atom(s), a (C1-C6)alkoxycarbonyl group, a (C1-C6)alkoxyimino(C1-C3)alkyl group, a tri(C1-C10)alkylsilyl group, or a phenyl, phenoxy, pyridyloxy or pyrimidyloxy group which may be substituted with a substituent(s); n is an integer of 1 to 5], which compounds cause reduced loads of deleterious, harmful effects to the earth environment, and exhibit a widened controlling spectrum at lowered chemical application rates, thereby finding useful application as a plant disease controlling agent for agricultural and horticultural uses.

    摘要翻译: 本发明提供由通式(I)表示的化合物:[其中X为可被卤原子取代的卤素原子或(C1-C3)烷基); Y是氢或卤原子,或氰基,(C1-C3)烷基或(C1-C3)烷氧基; (C 1 -C 6)烷基,(C 2 -C 6)烯基,(C 2 -C 6)炔基,(C 1 -C 6)烷氧基,(C 2 -C 6)烯氧基, (C 1 -C 6)烷氧基羰基,(C 1 -C 6)烷硫基,(C 1 -C 6)烷基亚磺酰基或可被卤原子取代的(C 1 -C 6)烷基磺酰基, (C1-C6)烷氧基亚氨基(C1-C3)烷基,三(C1-C10)烷基甲硅烷基,或可被取代基取代的苯基,苯氧基,吡啶氧基或嘧啶基氧基; n为1〜5的整数],这种化合物对地球环境造成有害的有害影响的负荷减少,化学施用率降低,控制谱扩大,从而有助于农业和植物病害防治剂的应用。 园艺用途。

    Benzamide derivatives, insecticides for agricultural and horticultural use and usage thereof
    40.
    发明授权
    Benzamide derivatives, insecticides for agricultural and horticultural use and usage thereof 失效
    苯甲酰胺衍生物,农业和园艺用杀虫剂及其用途

    公开(公告)号:US06642379B1

    公开(公告)日:2003-11-04

    申请号:US10018687

    申请日:2002-04-04

    IPC分类号: C07D26504

    摘要: Benzamide derivatives represented by the general formula (I): and insecticides for agricultural and horticultural use and usage thereof, wherein Z1 is O or S; R is H, (substituted) alkyl, or alkoxycarbonyl; X is halogeno, cyano, nitro, C3-C6(halo)cycloalkyl, (substituted) phenyl, a (substituted) heterocyclic group, or —A1—R1 [wherein A1 is —O—, —S—, —SO—, —SO2—, —C(═O)—, or —C(═NOR2)— (wherein R2 is H, C1-C6(halo)alkyl, (substituted) phenylated C1-C4 alkyl, or the like); and R1 is halogeno, C3-C6 cycloalkyl, C3-C6 halocycloalkenyl, (substituted) phenyl, or the like]; n is 0 to 4; Y is halogeno, cyano, nitro, C3-C6 halocycloalkyl, (substituted) phenyl, or the like; m is 1 to 5; Q is a heterocycle such as oxazoline; and B1 to B4 are each CH or N.

    摘要翻译: 由通式(I)表示的苯甲酰胺衍生物:和农业和园艺用途的杀虫剂及其用途,其中Z 1是O或S; R为H,(取代的)烷基或烷氧基羰基; X是卤代,氰基,硝基,C 3 -C 6(卤代)环烷基,(取代的)苯基,(取代的)杂环基或-A 1 -R 1 [其中A 1是-O-, -S-,-SO-,-SO 2 - , - C(= O) - 或-C(= NOR 2) - (其中R 2是H,C 1 -C 6(卤代)烷基,(取代的) -C4烷基等); 和R 1是卤代,C 3 -C 6环烷基,C 3 -C 6卤代环烯基,(取代的)苯基等]。 n为0〜4; Y是卤代,氰基,硝基,C 3 -C 6卤代环烷基,(取代的)苯基等; m为1〜5; Q是杂环,如恶唑啉; 和B 1至B 4各自为CH或N.