公开(公告)号：US08188602B2

公开(公告)日：2012-05-29

申请号：US10350219

申请日：2003-01-24

申请人： Satoshi Otsuka ,  Shun-ichi Fukuyama

发明人： Satoshi Otsuka ,  Shun-ichi Fukuyama

IPC分类号： H01L51/46

CPC分类号： H01L21/76834 ,  H01L21/76801 ,  H01L21/76811 ,  H01L21/76832 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： To provide a semiconductor device having copper wiring layers and organic insulating resin layers with less separation and its manufacture method.A semiconductor device has: a semiconductor substrate formed with a number of semiconductor elements; a first interlayer insulating film formed above the semiconductor substrate and having a first wiring recess; a first copper wiring embedded in the first wiring recess; a second interlayer insulating film having a second wiring recess, the second interlayer insulating film including a copper diffusion preventing layer formed on the first copper wiring and the first interlayer insulating film, an oxide film formed on the copper diffusion preventing layer, and an organic insulating resin layer formed on the oxide film; and a second copper wiring embedded in the second wiring recess.

摘要翻译： 提供具有铜布线层的半导体器件和具有较小分离性的有机绝缘树脂层及其制造方法。 半导体器件具有：形成有多个半导体元件的半导体衬底; 形成在所述半导体衬底上并具有第一布线凹槽的第一层间绝缘膜; 嵌入在所述第一布线槽中的第一铜布线; 具有第二布线凹槽的第二层间绝缘膜，所述第二层间绝缘膜包括形成在所述第一铜布线和所述第一层间绝缘膜上的铜扩散防止层，形成在所述铜扩散防止层上的氧化膜，以及有机隔离层 在氧化膜上形成树脂层; 以及嵌入在第二布线凹槽中的第二铜布线。

公开(公告)号：US07208405B2

公开(公告)日：2007-04-24

申请号：US10899045

申请日：2004-07-27

申请人： Tamotsu Owada ,  Hirofumi Watatani ,  Ken Sugimoto ,  Shun-ichi Fukuyama

发明人： Tamotsu Owada ,  Hirofumi Watatani ,  Ken Sugimoto ,  Shun-ichi Fukuyama

IPC分类号： H01L21/4763 ,  H01L21/302 ,  H01L21/461 ,  H01L21/31

CPC分类号： H01L21/76829 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76835 ,  H01L23/5222 ,  H01L23/5329 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00

摘要： A first film made of silicon carbide is formed over a substrate. The surface of the first film is exposed to an oxidizing atmosphere to oxidize the surface layer of the first film. The surface of the first film is made in contact with chemical which makes the surface hydrophilic. On the hydrophilic surface of the first film, a second film is formed which is an insulating film made of a low dielectric constant insulating material having a relative dielectric constant of 2.7 or smaller or an insulating film made by a coating method. A sufficient adhesion property is obtained when a film made of low dielectric constant insulating material is formed on an insulating film made of silicon carbide having a small amount of oxygen contents.

摘要翻译： 在基板上形成由碳化硅制成的第一膜。 第一膜的表面暴露于氧化气氛以氧化第一膜的表面层。 第一膜的表面与化学品接触，使表面亲水。 在第一膜的亲水表面上，形成第二膜，该第二膜是由相对介电常数为2.7以下的低介电常数绝缘材料制成的绝缘膜，或通过涂布法制成的绝缘膜。 当在由少量氧含量的碳化硅制成的绝缘膜上形成由低介电常数绝缘材料制成的膜时，获得了足够的附着性。

公开(公告)号：US07060909B2

公开(公告)日：2006-06-13

申请号：US10194318

申请日：2002-07-15

申请人： Shun-ichi Fukuyama

发明人： Shun-ichi Fukuyama

IPC分类号： H01B17/60 ,  E04B1/62

CPC分类号： H01L21/02126 ,  H01B3/30 ,  H01B3/46 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/312 ,  H01L21/76801 ,  H05K3/4676

摘要： A composition for the formation of an insulating film comprising a low dielectric constant polymeric material and a sublimating material, which are dissolved in a solvent. Preferred low dielectric constant polymeric materials include polyaryl ethers. Preferred sublimating materials include silicone compounds having a closed stereostructure having atoms at its vertexes, such as those known as Si-T8 and Si-T12. A method of forming a low dielectric constant insulating film and electronic parts or components using an insulating film formed thereby are also disclosed.

公开(公告)号：US20060087041A1

公开(公告)日：2006-04-27

申请号：US11256681

申请日：2005-10-24

申请人： Shun-ichi Fukuyama ,  Tamotsu Owada ,  Hiroko Inoue ,  Ken Sugimoto

发明人： Shun-ichi Fukuyama ,  Tamotsu Owada ,  Hiroko Inoue ,  Ken Sugimoto

IPC分类号： H01L23/48

CPC分类号： H01L23/5329 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76835 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/53295 ,  H01L2221/1036 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A semiconductor device is disclosed that includes a substrate, a first wiring structure arranged on the substrate which first wiring structure includes a first insulating layer and a first wiring layer arranged within the first insulating layer, a second wiring structure arranged on the first wiring structure which second wiring structure includes a second insulating layer including a shock absorbing layer made of an insulating film and a second wiring layer arranged within the second insulating layer, and a third wiring structure arranged on the second wiring structure which third wiring structure includes a third insulating layer and a third wiring layer arranged within the third insulating layer. The fracture toughness value of the shock absorbing layer is arranged to be greater than the fracture toughness value of the first insulating film and the fracture toughness value of the third insulating film.

摘要翻译： 公开了一种半导体器件，其包括基板，布置在基板上的第一布线结构，第一布线结构包括第一绝缘层和布置在第一绝缘层内的第一布线层，布置在第一布线结构上的第二布线结构， 第二布线结构包括：第二绝缘层，包括由绝缘膜制成的减震层和布置在第二绝缘层内的第二布线层;以及布置在第二布线结构上的第三布线结构，第三布线结构包括第三绝缘层 以及布置在所述第三绝缘层内的第三布线层。 冲击吸收层的断裂韧性值被设置为大于第一绝缘膜的断裂韧性值和第三绝缘膜的断裂韧性值。

公开(公告)号：US20050287790A1

公开(公告)日：2005-12-29

申请号：US11206955

申请日：2005-08-19

申请人： Tamotsu Owada ,  Shun-ichi Fukuyama ,  Hirofumi Watatani ,  Kengo Inoue ,  Atsuo Shimizu

发明人： Tamotsu Owada ,  Shun-ichi Fukuyama ,  Hirofumi Watatani ,  Kengo Inoue ,  Atsuo Shimizu

IPC分类号： C23C16/30 ,  H01L21/316 ,  H01L21/469 ,  H01L21/768

CPC分类号： H01L21/02227 ,  C23C16/30 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02315 ,  H01L21/0234 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76834

摘要： A method of manufacturing a semiconductor device includes the steps of: preparing an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on the underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of the carbon dioxide gas. The surface of the silicon carbide layer of the underlying structure may be treated with a plasma of weak oxidizing gas which contains oxygen and has a molecular weight larger than that of O2 to bring the surface more hydrophilic. Film peel-off and cracks in the interlayer insulating layer decrease.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：制备具有覆盖铜布线的碳化硅层的下面的结构，并且通过气相沉积作为原料气体四甲基环四硅氧烷，二氧化碳气体和氧气生长碳氢化合物 所述氧气的流量为二氧化碳气体流量的3％以下。 下面结构的碳化硅层的表面可以用含有氧的弱氧化气体的等离子体处理，并且分子量大于O 2 O 2的分子量以使表面更亲水。 膜剥离和层间绝缘层中的裂纹减少。

公开(公告)号：US20050242440A1

公开(公告)日：2005-11-03

申请号：US10899045

申请日：2004-07-27

申请人： Tamotsu Owada ,  Hirofumi Watatani ,  Ken Sugimoto ,  Shun-ichi Fukuyama

发明人： Tamotsu Owada ,  Hirofumi Watatani ,  Ken Sugimoto ,  Shun-ichi Fukuyama

IPC分类号： H01L23/522 ,  H01L21/314 ,  H01L21/768 ,  H01L23/48 ,  H01L23/532

CPC分类号： H01L21/76829 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76835 ,  H01L23/5222 ,  H01L23/5329 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00

摘要： A first film made of silicon carbide is formed over a substrate. The surface of the first film is exposed to an oxidizing atmosphere to oxidize the surface layer of the first film. The surface of the first film is made in contact with chemical which makes the surface hydrophilic. On the hydrophilic surface of the first film, a second film is formed which is an insulating film made of a low dielectric constant insulating material having a relative dielectric constant of 2.7 or smaller or an insulating film made by a coating method. A sufficient adhesion property is obtained when a film made of low dielectric constant insulating material is formed on an insulating film made of silicon carbide having a small amount of oxygen contents.

摘要翻译： 在基板上形成由碳化硅制成的第一膜。 第一膜的表面暴露于氧化气氛以氧化第一膜的表面层。 第一膜的表面与化学品接触，使表面亲水。 在第一膜的亲水表面上，形成第二膜，该第二膜是由相对介电常数为2.7以下的低介电常数绝缘材料制成的绝缘膜，或通过涂布法制成的绝缘膜。 当在由少量氧含量的碳化硅制成的绝缘膜上形成由低介电常数绝缘材料制成的膜时，获得了足够的附着性。

公开(公告)号：US4863833A

公开(公告)日：1989-09-05

申请号：US027089

申请日：1987-03-16

申请人： Shun-ichi Fukuyama ,  Yasuhiro Yoneda ,  Masashi Miyagawa ,  Kota Nishii

发明人： Shun-ichi Fukuyama ,  Yasuhiro Yoneda ,  Masashi Miyagawa ,  Kota Nishii

IPC分类号： G03F7/004 ,  G03F7/075

CPC分类号： G03F7/0757 ,  Y10S438/948

摘要： A high-energy radiation-sensitive pattern-forming resist material consisting of polysilsesquioxane having no hydroxyl group in its molecule. The pattern-forming material of this invention has an improved sensitivity to high-energy radiation exposure, a high resistance to dry etching, a high resolution capability, and an improved thermal stability.