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    Plasma CVD method
    32.
    发明授权
    Plasma CVD method 失效
    等离子体CVD法

    公开(公告)号：US07452829B2

    公开(公告)日：2008-11-18

    申请号：US11427377

    申请日：2006-06-29

    申请人： Shunpei Yamazaki ,  Masaaki Hiroki ,  Mitsunori Sakama

    发明人： Shunpei Yamazaki ,  Masaaki Hiroki ,  Mitsunori Sakama

    IPC分类号： H01L21/469 ,  H01L27/01

    CPC分类号： H01L21/02164 ,  C23C16/401 ,  C23C16/402 ,  C23C16/505 ,  H01L21/02274 ,  H01L21/31608 ,  H01L21/31612 ,  H01L29/66757 ,  H01L29/78621

    摘要： In a process of forming a silicon oxide film 116 that constitutes an interlayer insulating film with TEOS as a raw material through the plasma CVD method, the RF output is oscillated at 50 W, and the RF output is gradually increased from 50 W to 250 W (an output value at the time of forming a film) after discharging (after the generation of O2-plasma). A TEOS gas is supplied to start the film formation simultaneously when the RF output becomes 250 W, or while the timing is shifted. As a result, because the RF power supply is oscillated at a low output when starting discharging, a voltage between the RF electrodes can be prevented from changing transitionally and largely.

    摘要翻译： 在通过等离子体CVD法形成以TEOS为原料的层间绝缘膜形成氧化硅膜116的过程中，RF输出以50W振荡，RF输出从50W逐渐升高到250W （在形成膜之后的输出值）（放电后（在产生O 2·2 - 等离子体）之后）。 当RF输出变为250W时，或当定时偏移时，提供TEOS气体同时开始成膜。 结果，由于在开始放电时RF电源以低输出振荡，因此可以防止RF电极之间的电压在很大程度上发生变化。

    Method of manufacturing a semiconductor device
    33.
    发明授权
    Method of manufacturing a semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US07271082B2

    公开(公告)日：2007-09-18

    申请号：US10164019

    申请日：2002-06-07

    申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hiroyuki Shimada ,  Mitsunori Sakama ,  Hisashi Abe ,  Satoshi Teramoto

    发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hiroyuki Shimada ,  Mitsunori Sakama ,  Hisashi Abe ,  Satoshi Teramoto

    IPC分类号： H01L21/20

    CPC分类号： H01L21/02686 ,  C23C16/303 ,  C23C16/345 ,  C23C16/402 ,  C23C16/54 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/67155 ,  H01L21/67207 ,  H01L27/1281 ,  H01L29/41733 ,  Y10S438/905 ,  Y10S438/908

    摘要： A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber.

    摘要翻译： 基板处理装置包括经由可抽出的公共室彼此连接的多个可抽出的处理室，公共室设有用于在每个处理室之间输送基板的装置。 更具体地，基板处理装置包括多个可排除的处理室，至少一个所述处理室通过其中的气相反应具有成膜功能，所述处理室中的至少一个具有光照射的退火功能， 所述处理室中的至少一个具有加热功能。 所述设备还具有公共室，所述多个可抽出的处理室通过所述公共室彼此连接，以及设置在所述公共室中的输送装置，用于在每个处理室之间输送基板。

    Liquid crystal device having asymmetrical opposed contiguous surfaces being driven by a unipolar driving source
    37.
    发明授权
    Liquid crystal device having asymmetrical opposed contiguous surfaces being driven by a unipolar driving source 失效
    具有由非对称驱动源驱动的不对称对流表面的液晶装置

    公开(公告)号：US5069531A

    公开(公告)日：1991-12-03

    申请号：US385927

    申请日：1989-07-27

    申请人： Shunpei Yamazaki ,  Toshimitsu Konuma ,  Toshiji Hamatani ,  Akira Mase ,  Toshiharu Yamaguchi ,  Mitsunori Sakama ,  Takashi Inujima

    发明人： Shunpei Yamazaki ,  Toshimitsu Konuma ,  Toshiji Hamatani ,  Akira Mase ,  Toshiharu Yamaguchi ,  Mitsunori Sakama ,  Takashi Inujima

    IPC分类号： G02F1/1333

    CPC分类号： G02F1/133345

    摘要： A liquid crystal device including a unipolar driving source; a pair of substrates, at least one of which is transparent; a chiral smectic liquid crystal layer interposed between the substrates; and an electrode arrangement provided in order to apply an electric field normal to the liquid crystal layer, wherein the opposed inner surfaces of the substrates contiguous to the chiral smectic liquid crystal layer are formed of different materials having different surface energies such that upon application of the unipolar voltage to the chiral smectic liquid crystal, the chiral smectic liquid crystal molecules will be placed in a first state and upon removal of the unipolar voltage, the liquid crystal molecules will be returned to a second state.

    摘要翻译： 一种包括单极驱动源的液晶装置; 一对基板，其中至少一个是透明的; 介于基板之间的手性近晶液晶层; 以及设置用于施加与液晶层垂直的电场的电极装置，其中与手性近晶液晶层相邻的基板的相对的内表面由具有不同表面能的不同材料形成，使得在施加 对手性近晶液晶的单极电压，手性近晶液晶分子将被置于第一状态，并且在去除单极电压时，液晶分子将返回到第二状态。

    Plasma CVD method
    40.
    发明授权
    Plasma CVD method 失效
    等离子体CVD法

    公开(公告)号：US06951828B2

    公开(公告)日：2005-10-04

    申请号：US09917095

    申请日：2001-07-26

    申请人： Shunpei Yamazaki ,  Mitsunori Sakama ,  Masaaki Hiroki

    发明人： Shunpei Yamazaki ,  Mitsunori Sakama ,  Masaaki Hiroki

    IPC分类号： C23C16/40 ,  C23C16/505 ,  H01L21/316 ,  H01L21/31

    CPC分类号： H01L21/02164 ,  C23C16/401 ,  C23C16/402 ,  C23C16/505 ,  H01L21/02274 ,  H01L21/31608 ,  H01L21/31612 ,  H01L29/66757 ,  H01L29/78621

    摘要： In a process of forming a silicon oxide film 116 that constitutes an interlayer insulating film with TEOS as a raw material through the plasma CVD method, the RF output is oscillated at 50 W, and the RF output is gradually increased from 50 W to 250 W (an output value at the time of forming a film) after discharging (after the generation of O2-plasma). A TEOS gas is supplied to start the film formation simultaneously when the RF output becomes 250 W, or while the timing is shifted. As a result, because the RF power supply is oscillated at a low output when starting discharging, a voltage between the RF electrodes can be prevented from changing transitionally and largely.

    摘要翻译： 在通过等离子体CVD法形成以TEOS为原料的层间绝缘膜形成氧化硅膜116的过程中，RF输出以50W振荡，RF输出从50W逐渐升高到250W （在形成膜之后的输出值）（放电后（在产生O 2·2 - 等离子体）之后）。 当RF输出变为250W时，或当定时偏移时，提供TEOS气体同时开始成膜。 结果，由于在开始放电时RF电源以低输出振荡，因此可以防止RF电极之间的电压在很大程度上发生变化。