Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
    33.
    发明申请
    Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 有权
    投影物镜包括多个镜子,前视镜M3

    公开(公告)号:US20060171040A1

    公开(公告)日:2006-08-03

    申请号:US11356525

    申请日:2006-02-16

    IPC分类号: G02B17/00

    摘要: According to one exemplary embodiment, a projection objective is provided and includes at least two non-planar (curved) mirrors, wherein an axial distance between a next to last non-planar mirror and a last non-planar mirror, as defined along a light path, is greater than an axial distance between the last non-planar mirror and a first refracting surface of lenses following in the light path. In one exemplary embodiment, the first refracting surface is associated with a single pass type lens. The present objectives form images with numerical apertures of at least about 0.80 or higher, e.g., 0.95. Preferably, the objective does not include folding mirrors and there is no intermediate image between the two mirrors, as well as the pupil of the objective being free of obscuration.

    摘要翻译: 根据一个示例性实施例,提供了一种投影物镜,并且包括至少两个非平面(弯曲)反射镜,其中,沿着光线定义的下一个至最后的非平面镜与最后的非平面镜之间的轴向距离 路径大于最后的非平面镜与在光路中跟随的透镜的第一折射表面之间的轴向距离。 在一个示例性实施例中,第一折射表面与单遍型透镜相关联。 当前目标形成具有至少约0.80或更高(例如0.95)的数值孔径的图像。 优选地,该目的不包括折叠反射镜,并且在两个反射镜之间不存在中间图像,以及物镜的瞳孔没有遮蔽。

    Lithographic system, method for adapting transmission characteristics of an optical pathway within a lithographic system, semiconductor device, method of manufacturing a reflective element for use in a lithographic system, and reflective element manufactured thereby
    35.
    发明申请
    Lithographic system, method for adapting transmission characteristics of an optical pathway within a lithographic system, semiconductor device, method of manufacturing a reflective element for use in a lithographic system, and reflective element manufactured thereby 有权
    平版印刷系统,用于适应光刻系统内的光学通路的传输特性的方法,半导体器件,制造用于光刻系统的反射元件的方法和由此制造的反射元件

    公开(公告)号:US20060082751A1

    公开(公告)日:2006-04-20

    申请号:US10964817

    申请日:2004-10-15

    IPC分类号: G03B27/72

    CPC分类号: G03F7/70575

    摘要: A lithographic system includes a radiation system configured to provide a beam of radiation; an illumination system configured to condition the beam of radiation; a support configured to support a patterning device, the patterning device configured to impart the projection beam with a pattern in its cross-section; a substrate table configured to hold a substrate; a projection system configured to project the patterned beam onto a target portion of the substrate; and transmission adaptor arranged along an optical pathway. The radiation system includes a source configured to generate a beam of radiation. The transmission adaptor adapts an intensity profile as a function of wavelength of the beam of radiation and/or the patterned beam in such a way that the intensity profile equals a predetermined intensity profile.

    摘要翻译: 光刻系统包括被配置为提供辐射束的辐射系统; 配置成调节辐射束的照明系统; 构造成支撑图案形成装置的支撑件,所述图案形成装置被构造成在其横截面中赋予所述投影光束图案; 被配置为保持基板的基板台; 投影系统,被配置为将所述图案化的光束投影到所述基板的目标部分上; 和传输适配器沿着光学路径布置。 辐射系统包括被配置为产生辐射束的源。 传输适配器以强度分布等于预定强度分布的方式适应作为辐射束和/或图案化束的波长的函数的强度分布。

    Mirror for use in a microlithography projection exposure apparatus
    37.
    发明授权
    Mirror for use in a microlithography projection exposure apparatus 有权
    用于微光刻投影曝光装置的镜子

    公开(公告)号:US09568845B2

    公开(公告)日:2017-02-14

    申请号:US13417510

    申请日:2012-03-12

    摘要: A mirror including a substrate and a reflective coating that includes a first group of layers and a second group of layers arranged between the substrate and the first group of layers. Both the first and second groups of layers include a plurality of alternating first material layers and second material layers, arranged one above another. The refractive index of the first material for radiation in the range of 5-30 nm is greater than the refractive index of the second material in that wavelength range. The first group of layers is configured to have a number of layers that is greater than 20, such that, upon irradiation with radiation having a wavelength in the range of 5-30 nm, less than 20% of the radiation reaches the second group of layers, which has a layer thickness variation for correcting the surface form of the mirror.

    摘要翻译: 一种包括基板和反射涂层的反射镜,其包括布置在基板和第一组层之间的第一组层和第二组层。 第一组和第二组都包括多个交替的第一材料层和第二材料层,其彼此排列。 用于5-30nm范围内的辐射的第一材料的折射率大于在该波长范围内的第二材料的折射率。 第一组层被配置为具有大于20的多个层,使得当辐射具有在5-30nm范围内的波长的辐射时,少于20%的辐射达到第二组 层,其具有用于校正反射镜的表面形式的层厚度变化。

    Microlithography projection optical system, tool and method of production
    39.
    发明授权
    Microlithography projection optical system, tool and method of production 有权
    微光投影光学系统,工具及生产方法

    公开(公告)号:US08970819B2

    公开(公告)日:2015-03-03

    申请号:US12235957

    申请日:2008-09-23

    IPC分类号: G03B27/42 G03F7/20 G03F1/62

    摘要: A microlithography projection optical system is disclosed. The system can include a plurality of optical elements arranged to image radiation having a wavelength λ from an object field in an object plane to an image field in an image plane. The plurality of optical elements can have an entrance pupil located more than 2.8 m from the object plane. A path of radiation through the optical system can be characterized by chief rays having an angle of 3° or more with respect to the normal to the object plane. This can allow the use of phase shifting masks as objects to be imaged, in particular for EUV wavelengths.

    摘要翻译: 公开了一种微光刻投影光学系统。 该系统可以包括多个光学元件,其被布置成将来自物体平面中的物体场的具有波长λ的辐射成像到图像平面中的图像场。 多个光学元件可以具有距离物面大于2.8μm的入射光瞳。 通过光学系统的辐射路径的特征在于主要光线相对于物平面的法线具有3°或更大的角度。 这可以允许使用相移掩模作为要成像的对象,特别是对于EUV波长。

    Magnifying imaging optical unit and metrology system including same
    40.
    发明授权
    Magnifying imaging optical unit and metrology system including same 有权
    放大成像光学单元和包括其的计量系统

    公开(公告)号:US08842284B2

    公开(公告)日:2014-09-23

    申请号:US13357222

    申请日:2012-01-24

    申请人: Hans-Juergen Mann

    发明人: Hans-Juergen Mann

    IPC分类号: G01N21/00 G02B17/06 G03F7/20

    摘要: A magnifying imaging optical unit has at least four mirrors to image an object field in an object plane into an image field in an image plane. An absolute value of the Petzval radius of the image field is greater than 500 mm. The imaging optical unit can be used to inspect with sufficient imaging quality relatively large mask sections of lithography masks used during projection exposure to produce large scale integrated semiconductor components.

    摘要翻译: 放大成像光学单元具有至少四个镜,用于将物平面中的物场映像成像平面中的图像场。 图像场的Petzval半径的绝对值大于500 mm。 成像光学单元可以用于以足够的成像质量来检查在投影曝光期间使用的光刻掩模的相对较大的掩模部分以产生大规模集成半导体部件。