摘要:
A lithographic system includes a radiation system configured to provide a beam of radiation; an illumination system configured to condition the beam of radiation; a support configured to support a patterning device, the patterning device configured to impart the projection beam with a pattern in its cross-section; a substrate table configured to hold a substrate; a projection system configured to project the patterned beam onto a target portion of the substrate; and transmission adaptor arranged along an optical pathway. The radiation system includes a source configured to generate a beam of radiation. The transmission adaptor adapts an intensity profile as a function of wavelength of the beam of radiation and/or the patterned beam in such a way that the intensity profile equals a predetermined intensity profile.
摘要:
There is provided a projection exposure apparatus for microlithography using a wavelength less than or equal to 193 nm. The apparatus includes an optical element with a pupil raster element, and a projection objective with a real entrance pupil. The optical element is situated in or near a plane defined by the real entrance pupil.
摘要:
According to one exemplary embodiment, a projection objective is provided and includes at least two non-planar (curved) mirrors, wherein an axial distance between a next to last non-planar mirror and a last non-planar mirror, as defined along a light path, is greater than an axial distance between the last non-planar mirror and a first refracting surface of lenses following in the light path. In one exemplary embodiment, the first refracting surface is associated with a single pass type lens. The present objectives form images with numerical apertures of at least about 0.80 or higher, e.g., 0.95. Preferably, the objective does not include folding mirrors and there is no intermediate image between the two mirrors, as well as the pupil of the objective being free of obscuration.
摘要:
According to one exemplary embodiment, a projection objective is provided and includes at least two non-planar (curved) mirrors, wherein an axial distance between a next to last non-planar mirror and a last non-planar mirror, as defined along a light path, is greater than an axial distance between the last non-planar mirror and a first refracting surface of lenses following in the light path. In one exemplary embodiment, the first refracting surface is associated with a single pass type lens. The present objectives form images with numerical apertures of at least about 0.80 or higher, e.g., 0.95. Preferably, the objective does not include folding mirrors and there is no intermediate image between the two mirrors, as well as the pupil of the objective being free of obscuration.
摘要:
A lithographic system includes a radiation system configured to provide a beam of radiation; an illumination system configured to condition the beam of radiation; a support configured to support a patterning device, the patterning device configured to impart the projection beam with a pattern in its cross-section; a substrate table configured to hold a substrate; a projection system configured to project the patterned beam onto a target portion of the substrate; and transmission adaptor arranged along an optical pathway. The radiation system includes a source configured to generate a beam of radiation. The transmission adaptor adapts an intensity profile as a function of wavelength of the beam of radiation and/or the patterned beam in such a way that the intensity profile equals a predetermined intensity profile.
摘要:
There is provided a projection objective for a projection exposure apparatus that has a primary light source for emitting electromagnetic radiation having a chief ray with a wavelength≦193 nm. The projection objective includes an object plane, a first mirror, a second mirror, a third mirror, a fourth mirror; and an image plane. The object plane, the first mirror, the second mirror, the third mirror, the fourth mirror and the image plane are arranged in a centered arrangement around a common optical axis. The first mirror, the second mirror, the third mirror, and the fourth mirror are situated between the object plane and the image plane. The chief ray, when incident on an object situated in the object plane, in a direction from the primary light source, is inclined away from the common optical axis.
摘要:
A mirror including a substrate and a reflective coating that includes a first group of layers and a second group of layers arranged between the substrate and the first group of layers. Both the first and second groups of layers include a plurality of alternating first material layers and second material layers, arranged one above another. The refractive index of the first material for radiation in the range of 5-30 nm is greater than the refractive index of the second material in that wavelength range. The first group of layers is configured to have a number of layers that is greater than 20, such that, upon irradiation with radiation having a wavelength in the range of 5-30 nm, less than 20% of the radiation reaches the second group of layers, which has a layer thickness variation for correcting the surface form of the mirror.
摘要:
An optical arrangement includes at least one optical element and a support element for the optical element. The optical element and the support element are connected together by way of at least three decoupling elements. The decoupling elements are formed monolithically with the optical element and with the support element.
摘要:
A microlithography projection optical system is disclosed. The system can include a plurality of optical elements arranged to image radiation having a wavelength λ from an object field in an object plane to an image field in an image plane. The plurality of optical elements can have an entrance pupil located more than 2.8 m from the object plane. A path of radiation through the optical system can be characterized by chief rays having an angle of 3° or more with respect to the normal to the object plane. This can allow the use of phase shifting masks as objects to be imaged, in particular for EUV wavelengths.
摘要:
A magnifying imaging optical unit has at least four mirrors to image an object field in an object plane into an image field in an image plane. An absolute value of the Petzval radius of the image field is greater than 500 mm. The imaging optical unit can be used to inspect with sufficient imaging quality relatively large mask sections of lithography masks used during projection exposure to produce large scale integrated semiconductor components.