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1.发明授权Lithographic system, method for adapting transmission characteristics of an optical pathway within a lithographic system, semiconductor device, method of manufacturing a reflective element for use in a lithographic system, and reflective element manufactured thereby 有权平版印刷系统，用于适应光刻系统内的光学通路的传输特性的方法，半导体器件，制造用于光刻系统的反射元件的方法和由此制造的反射元件公开(公告)号：US07369216B2
公开(公告)日：2008-05-06
申请号：US10964817
申请日：2004-10-15
CPC分类号： G03F7/70575
摘要： A lithographic system includes a radiation system configured to provide a beam of radiation; an illumination system configured to condition the beam of radiation; a support configured to support a patterning device, the patterning device configured to impart the projection beam with a pattern in its cross-section; a substrate table configured to hold a substrate; a projection system configured to project the patterned beam onto a target portion of the substrate; and transmission adaptor arranged along an optical pathway. The radiation system includes a source configured to generate a beam of radiation. The transmission adaptor adapts an intensity profile as a function of wavelength of the beam of radiation and/or the patterned beam in such a way that the intensity profile equals a predetermined intensity profile.
摘要翻译： 光刻系统包括被配置为提供辐射束的辐射系统; 配置成调节辐射束的照明系统; 构造成支撑图案形成装置的支撑件，所述图案形成装置被构造成在其横截面中赋予所述投影光束图案; 被配置为保持基板的基板台; 投影系统，被配置为将所述图案化的光束投影到所述基板的目标部分上; 和传输适配器沿着光学路径布置。 辐射系统包括被配置为产生辐射束的源。 传输适配器以强度分布等于预定强度分布的方式适应作为辐射束和/或图案化束的波长的函数的强度分布。
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2.发明授权Optical system for radiation in the EUV-wavelength range and method for measuring a contamination status of EUV-reflective elements 有权用于EUV波长范围辐射的光学系统和用于测量EUV反射元件的污染状态的方法公开(公告)号：US07763870B2
公开(公告)日：2010-07-27
申请号：US11855849
申请日：2007-09-14
申请人： Dirk Heinrich Ehm , Hermann Bieg , Hans-Juergen Mann , Stephan Muellender , Johannes Hubertus Josephina Moors , Bastiaan Theodoor Wolschrijn
发明人： Dirk Heinrich Ehm , Hermann Bieg , Hans-Juergen Mann , Stephan Muellender , Johannes Hubertus Josephina Moors , Bastiaan Theodoor Wolschrijn
IPC分类号： H05G2/00
CPC分类号： G03F7/70916 , G03F7/7085 , G03F7/70941
摘要： An optical system for radiation in the EUV wavelength range, in particular a projection exposure apparatus, having at least one vacuum vessel, including: at least one EUV-reflective optical element arranged in an optical path, and a holder which includes at least one sample element, the sample element having an optical surface which is exposed to incident EUV-radiation outside of the optical path, the sample element being sensitive to chemical alterations under influence of the incident EUV-radiation which also affect the optical element. The optical system further includes at least one detection unit for online detection of the contamination status of the sample element during exposure of the sample element to the incident EUV-radiation.
摘要翻译： 一种用于EUV波长范围的辐射的光学系统，特别是具有至少一个真空容器的投影曝光装置，包括：至少一个设置在光路中的EUV反射光学元件，以及一个保持器，该保持器包括至少一个样品 元件，样品元件具有暴露于光路外部的入射EUV辐射的光学表面，样品元件在影响光学元件的入射EUV辐射的影响下对化学变化敏感。 光学系统还包括至少一个检测单元，用于在将样品元件暴露于入射的EUV辐射期间在线检测样品元件的污染状态。
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3.发明申请OPTICAL SYSTEM FOR RADIATION IN THE EUV-WAVELENGTH RANGE AND METHOD FOR MEASURING A CONTAMINATION STATUS OF EUV-REFLECTIVE ELEMENTS 有权用于辐射EUV波长范围的光学系统和测量EUV反射元件的污染状态的方法公开(公告)号：US20080315134A1
公开(公告)日：2008-12-25
申请号：US11855849
申请日：2007-09-14
申请人： Dirk Heinrich EHM , Hermann Bieg , Hans-Juergen Mann , Stephan Muellender , Johannes Hubertus Josephina Moors , Bastian Theodor Wolschrijn
发明人： Dirk Heinrich EHM , Hermann Bieg , Hans-Juergen Mann , Stephan Muellender , Johannes Hubertus Josephina Moors , Bastian Theodor Wolschrijn
CPC分类号： G03F7/70916 , G03F7/7085 , G03F7/70941
摘要： An optical system for radiation in the EUV wavelength range, in particular a projection exposure apparatus, having at least one vacuum vessel, including: at least one EUV-reflective optical element arranged in an optical path, and a holder which includes at least one sample element, the sample element having an optical surface which is exposed to incident EUV-radiation outside of the optical path, the sample element being sensitive to chemical alterations under influence of the incident EUV-radiation which also affect the optical element. The optical system further includes at least one detection unit for online detection of the contamination status of the sample element during exposure of the sample element to the incident EUV-radiation.
摘要翻译： 一种用于EUV波长范围的辐射的光学系统，特别是具有至少一个真空容器的投影曝光装置，包括：至少一个设置在光路中的EUV反射光学元件，以及一个保持器，该保持器包括至少一个样品 元件，样品元件具有暴露于光路外部的入射EUV辐射的光学表面，样品元件在影响光学元件的入射EUV辐射的影响下对化学变化敏感。 光学系统还包括至少一个检测单元，用于在将样品元件暴露于入射的EUV辐射期间在线检测样品元件的污染状态。
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4.发明授权公开(公告)号：US07092072B2
公开(公告)日：2006-08-15
申请号：US10882684
申请日：2004-07-02
CPC分类号： G03F7/70558
摘要： A calibration apparatus is provided for calibrating a radiation sensor in a lithographic apparatus. The calibration apparatus includes a window formed of substantially radiation-transparent material for allowing radiation to pass therethrough to reach the radiation sensor. A first reference sensor is located behind the window, having an active surface abutting the window, for measuring the intensity of radiation which passes through the window. A second reference sensor is located a short distance behind the window, having an active surface facing the window, for measuring the intensity of radiation which passes through the window, a first contamination layer formed on the window, and a second contamination layer formed on the active surface of the second reference sensor. The radiation sensor can be calibrated by combining the measurements from the first and second radiation sensors.
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公开(公告)号：US06980281B2
公开(公告)日：2005-12-27
申请号：US10762565
申请日：2004-01-23
CPC分类号： G03F7/70483 , G03F7/7085 , G03F7/70916 , G03F7/70983
摘要： In a lithographic apparatus, a beam of radiation passes along a beam path to a substrate, for applying patterned illumination to the substrate. An exchangeable aperture screen is inserted in the beam path to partially block out the beam from a remainder of the path onto the substrate. A test surface is provided on the aperture screen, so that the test surface receives a part of the beam that is not passed along the remainder of the beam path. The test surface is made of a material that is sensitive, under influence of radiation from the beam, to chemical alterations that also affect the optical element under influence of radiation from the beam. The test surface is later analyzed for chemical alterations after exposure to the beam.
摘要翻译： 在光刻设备中，辐射束沿着光束路径传递到衬底，用于将图案化照明施加到衬底。 可更换的孔径屏幕被插入到光束路径中以部分地将光束从路径的剩余部分阻挡到衬底上。 在孔眼屏幕上设置测试表面，使得测试表面接收不沿着光束路径的其余部分通过的光束的一部分。 测试表面由在来自梁的辐射的影响下敏感的材料制成的化学变化也在来自梁的辐射的影响下影响光学元件。 随后分析试验表面暴露于梁后的化学变化。
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6.发明授权Lithographic apparatus, device manufacturing method, and device manufactured thereby 有权平版印刷设备，器件制造方法和由此制造的器件公开(公告)号：US07098994B2
公开(公告)日：2006-08-29
申请号：US10758270
申请日：2004-01-16
申请人： Johannes Hubertus Josephina Moors , Uwe Mickan , Harm-Jan Voorma , Johannes Christiaan Leonardus Franken
发明人： Johannes Hubertus Josephina Moors , Uwe Mickan , Harm-Jan Voorma , Johannes Christiaan Leonardus Franken
CPC分类号： B82Y10/00 , G03F7/70166 , G03F7/70175 , G03F7/70891
摘要： A lithographic apparatus includes an illumination system for providing a beam of radiation, a support structure for supporting a patterning device, the patterning device serving to impart the beam with a pattern in its cross-section. The apparatus further includes a substrate table for holding a substrate, a projection system for projecting the patterned beam onto a target portion of the substrate, and a collector which is arranged for transmitting radiation, received from a first radiation source, to the illumination system. The apparatus includes at least a heater for heating the collector when the collector receives substantially no radiation from the first radiation source. Further aspects of the invention relate to a device manufacturing method as well as a device manufactured thereby.
摘要翻译： 光刻设备包括用于提供辐射束的照明系统，用于支撑图案形成装置的支撑结构，所述图案形成装置用于在其横截面中赋予光束图案。 该装置还包括用于保持基板的基板台，用于将图案化的光束投影到基板的目标部分上的投影系统以及被布置成用于将从第一辐射源接收的辐射传送到照明系统的收集器。 当收集器基本上不接收来自第一辐射源的辐射时，该装置至少包括用于加热集电器的加热器。 本发明的其它方面涉及一种装置制造方法以及由此制造的装置。
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公开(公告)号：US09897930B2
公开(公告)日：2018-02-20
申请号：US13057583
申请日：2009-07-22
申请人： Leonid Aizikovitch Sjmaenok , Vadim Yevgenyevich Banine , Johannes Hubertus Josephina Moors , Denis Alexandrovich Glushkov , Andrei Mikhailovich Yakunin
发明人： Leonid Aizikovitch Sjmaenok , Vadim Yevgenyevich Banine , Johannes Hubertus Josephina Moors , Denis Alexandrovich Glushkov , Andrei Mikhailovich Yakunin
IPC分类号： G03F7/20
CPC分类号： G03F7/70958 , G03F7/70191 , G03F7/702 , G03F7/70308 , G03F7/70575 , G03F7/70916
摘要： A lithographic apparatus includes an optical element that includes an oriented carbon nanotube sheet. The optical element has an element thickness in the range of about 20-500 nm and has a transmission for EUV radiation having a wavelength in the range of about 1-20 nm of at least about 20% under perpendicular irradiation with the EUV radiation.
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公开(公告)号：US08373846B2
公开(公告)日：2013-02-12
申请号：US12553368
申请日：2009-09-03
申请人： Erik Roelof Loopstra , Gerardus Hubertus Petrus Maria Swinkels , Vadim Yevgenyevich Banine , Johannes Hubertus Josephina Moors
发明人： Erik Roelof Loopstra , Gerardus Hubertus Petrus Maria Swinkels , Vadim Yevgenyevich Banine , Johannes Hubertus Josephina Moors
CPC分类号： H05G2/006 , G03F7/70033 , G03F7/70891 , G03F7/70916 , G21K1/06 , H05G2/003 , H05G2/005 , H05G2/008
摘要： A radiation source is configured to produce extreme ultraviolet radiation. The radiation source includes a chamber in which, in use, a plasma is generated, and an evaporation surface configured to evaporate a material formed as a by-product from the plasma and that is emitted to the evaporation surface. A method for removing a by-product material in or from a plasma radiation source of a lithographic apparatus includes evaporating a material which, in use, is emitted to that surface from the plasma.
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公开(公告)号：US08368040B2
公开(公告)日：2013-02-05
申请号：US12832258
申请日：2010-07-08
申请人： Erik Roelof Loopstra , Vladimir Vitalevich Ivanov , Johannes Hubertus Josephina Moors , Gerardus Hubertus Petrus Maria Swinkels , Andrei Mikhailovich Yakunin , Dennis De Graaf , Uwe Bruno Heini Stamm
发明人： Erik Roelof Loopstra , Vladimir Vitalevich Ivanov , Johannes Hubertus Josephina Moors , Gerardus Hubertus Petrus Maria Swinkels , Andrei Mikhailovich Yakunin , Dennis De Graaf , Uwe Bruno Heini Stamm
CPC分类号： H05G2/003 , G03F7/70033 , H05G2/005 , H05G2/008
摘要： A radiation system includes a target material supply configured to supply droplets of target material along a trajectory, and a laser system that includes an amplifier and optics. The optics are configured to establish a first beam path which passes through the amplifier and through a first location on the trajectory, and to establish a second beam path which passes through the amplifier and through a second location on the trajectory. The laser system is configured to generate a first pulse of laser radiation when photons emitted from the amplifier are reflected along the first beam path by a droplet of target material at the first location on the trajectory. The laser system is configured to generate a second pulse of laser radiation when photons emitted from the amplifier are reflected along the second beam path by the droplet of target material at the second location on the trajectory.
摘要翻译： 辐射系统包括被配置为沿着轨迹提供目标材料的液滴的目标材料供应，以及包括放大器和光学器件的激光系统。 光学器件被配置成建立穿过放大器并通过轨迹上的第一位置的第一光束路径，并且建立穿过放大器并通过轨迹上的第二位置的第二光束路径。 激光系统被配置为当从放大器发射的光子在轨迹上的第一位置处通过目标材料的液滴沿着第一光束路径反射时，产生激光辐射的第一脉冲。 激光系统被配置为当从放大器发射的光子在轨道上的第二位置处由靶材料的液滴沿着第二光束路径反射时，产生激光辐射的第二脉冲。
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10.发明授权公开(公告)号：US08279397B2
公开(公告)日：2012-10-02
申请号：US12469546
申请日：2009-05-20
申请人： Dirk Heinrich Ehm , Johannes Hubertus Josephina Moors , Bastiaan Theodoor Wolschrijn , Vadim Banine , Vladimir Vitalevitsch Ivanov
发明人： Dirk Heinrich Ehm , Johannes Hubertus Josephina Moors , Bastiaan Theodoor Wolschrijn , Vadim Banine , Vladimir Vitalevitsch Ivanov
IPC分类号： G03B27/52
CPC分类号： G03F7/70916 , G03F7/70925
摘要： A method and an optical arrangement for removing contamination on optical surfaces (26), which are arranged in a vacuum environment in an optical arrangement, preferably in a projection exposure apparatus (1) for EUV lithography. The method includes generating a residual gas atmosphere containing molecular hydrogen (18) and at least one inert gas (17) in the vacuum environment, generating inert gas ions (21) by ionization of the inert gas (17), preferably with EUV radiation (20), and generating atomic hydrogen (27) by acceleration of the inert gas ions (21) in the residual gas atmosphere, to remove the contamination.
摘要翻译： 一种用于去除在光学装置的真空环境中布置的光学表面（26）上的污染的方法和光学装置，优选在用于EUV光刻的投影曝光装置（1）中。 该方法包括在真空环境中产生含有分子氢（18）和至少一种惰性气体（17）的残余气体气氛，通过惰性气体（17）的电离产生惰性气体离子（21），优选用EUV辐射 20），并且通过加热惰性气体离子（21）在残留气体气氛中产生原子氢（27），以除去污染物。
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