Organic light emitting diode display
    31.
    发明授权
    Organic light emitting diode display 有权
    有机发光二极管显示

    公开(公告)号:US07842944B2

    公开(公告)日:2010-11-30

    申请号:US11615439

    申请日:2006-12-22

    IPC分类号: H01L51/00

    摘要: An organic light emitting diode (“OLED”) display includes a substrate, a gate line, a data line, a driving voltage line, a light blocking member, a switching thin film transistor (“TFT”), a driving TFT, and an OLED, wherein the driving voltage line includes a portion parallel to at least one of the gate line and the data line, the light blocking member is formed under at least one of the gate line, the data line, and the driving voltage line, the switching TFT is connected to the gate line and the data line and includes an amorphous semiconductor, the driving TFT is connected to the switching TFT and includes a polycrystalline semiconductor, and the OLED is connected to the driving TFT.

    摘要翻译: 有机发光二极管(“OLED”)显示器包括衬底,栅极线,数据线,驱动电压线,遮光构件,开关薄膜晶体管(“TFT”),驱动TFT和 OLED,其中所述驱动电压线包括与所述栅极线和所述数据线中的至少一个平行的部分,所述遮光部件形成在所述栅极线,所述数据线和所述驱动电压线中的至少一个之下, 开关TFT连接到栅极线和数据线并且包括非晶半导体,驱动TFT连接到开关TFT并且包括多晶半导体,并且OLED连接到驱动TFT。

    Electro-luminescence device including a thin film transistor and method of fabricating an electro-luminescence device
    33.
    发明授权
    Electro-luminescence device including a thin film transistor and method of fabricating an electro-luminescence device 有权
    包括薄膜晶体管的电致发光器件和制造电致发光器件的方法

    公开(公告)号:US07501658B2

    公开(公告)日:2009-03-10

    申请号:US11858287

    申请日:2007-09-20

    IPC分类号: H01L27/15

    CPC分类号: H01L27/3244 H01L27/3262

    摘要: An electro-luminescence device including an electro-luminescence element and a thin film transistor electrically connected to the electro-luminescence element. The thin film transistor includes a gate electrode formed over a substrate, an insulating layer formed over the gate electrode, and a first semiconductor pattern formed over the insulating layer. An etch stop layer is formed over the first semiconductor layer. A second semiconductor pattern is formed over the etch stop layer at one side of the etch stop layer, and a third semiconductor pattern is formed over the etch stop layer at another side of the etch stop layer. A source electrode is formed over the second semiconductor pattern, and a drain electrode is formed over the third semiconductor pattern.

    摘要翻译: 一种电致发光器件,包括电连接到电致发光元件的电致发光元件和薄膜晶体管。 薄膜晶体管包括形成在衬底上的栅电极,形成在栅电极上的绝缘层,以及形成在绝缘层上的第一半导体图案。 在第一半导体层上形成蚀刻停止层。 在蚀刻停止层的一侧上的蚀刻停止层上形成第二半导体图案,并且在蚀刻停止层的另一侧上形成第三半导体图案。 在第二半导体图案上形成源电极,在第三半导体图案上形成漏电极。

    ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME
    34.
    发明申请
    ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME 有权
    有机发光二极管显示器及其制造方法

    公开(公告)号:US20070194326A1

    公开(公告)日:2007-08-23

    申请号:US11676767

    申请日:2007-02-20

    申请人: Jong-Moo Huh

    发明人: Jong-Moo Huh

    IPC分类号: H01L33/00

    摘要: An organic light emitting diode (“OLED”) display includes; a substrate, first and second signal lines which intersect each other and are disposed on the substrate, a switching control electrode connected to the first signal line, a switching input electrode connected to the second signal line, a switching output electrode disposed substantially opposite the switching input electrode with respect to the switching control electrode, a switching semiconductor which partially overlaps the switching input electrode and the switching output electrode, first and second driving control electrodes connected to the switching output electrode, a driving semiconductor disposed between the first and second driving control electrodes, a driving input electrode and a driving output electrode which partially overlap the driving semiconductor and are disposed substantially opposite each other with respect to the driving semiconductor, a first electrode connected to the driving output electrode, a second electrode which faces the first electrode, and a light emitting member disposed between the first electrode and the second electrode.

    摘要翻译: 有机发光二极管(“OLED”)显示器包括: 基板,彼此相交并布置在基板上的基板,第一和第二信号线,连接到第一信号线的开关控制电极,连接到第二信号线的开关输入电极,与开关基本相对设置的开关输出电极 与切换控制电极相对的输入电极,与切换输入电极和切换输出电极部分重叠的切换半导体,与切换输出电极连接的第一驱动控制电极和第二驱动控制电极,配置在第一驱动控制部和第二驱动控制部之间的驱动半导体 电极,驱动输入电极和驱动输出电极,其部分地与驱动半导体重叠并且相对于驱动半导体基本相对地设置;连接到驱动输出电极的第一电极,面向第一电极的第二电极, 和光 设置在第一电极和第二电极之间。

    Electro-luminescence device including a thin film transistor and method of fabricating an electro-luminescence device
    36.
    发明申请
    Electro-luminescence device including a thin film transistor and method of fabricating an electro-luminescence device 有权
    包括薄膜晶体管的电致发光器件和制造电致发光器件的方法

    公开(公告)号:US20050014379A1

    公开(公告)日:2005-01-20

    申请号:US10761607

    申请日:2004-01-21

    CPC分类号: H01L27/3244 H01L27/3262

    摘要: An electro-luminescence device including an electro-luminescence element and a thin film transistor electrically connected to the electro-luminescence element. The thin film transistor includes a gate electrode formed over a substrate, an insulating layer formed over the gate electrode, and a first semiconductor pattern formed over the insulating layer. An etch stop layer is formed over the first semiconductor layer. A second semiconductor pattern is formed over the etch stop layer at one side of the etch stop layer, and a third semiconductor pattern is formed over the etch stop layer at another side of the etch stop layer. A source electrode is formed over the second semiconductor pattern, and a drain electrode is formed over the third semiconductor pattern.

    摘要翻译: 一种电致发光器件,包括电连接到电致发光元件的电致发光元件和薄膜晶体管。 薄膜晶体管包括形成在衬底上的栅电极,形成在栅电极上的绝缘层,以及形成在绝缘层上的第一半导体图案。 在第一半导体层上形成蚀刻停止层。 在蚀刻停止层的一侧上的蚀刻停止层上形成第二半导体图案,并且在蚀刻停止层的另一侧上形成第三半导体图案。 在第二半导体图案上形成源电极,在第三半导体图案上形成漏电极。

    Organic light emitting diode display with improved crystallinity of driving semiconductor
    37.
    发明授权
    Organic light emitting diode display with improved crystallinity of driving semiconductor 失效
    有机发光二极管显示器具有改善驱动半导体的结晶度

    公开(公告)号:US08519386B2

    公开(公告)日:2013-08-27

    申请号:US13532316

    申请日:2012-06-25

    IPC分类号: H01L29/08

    摘要: An organic light emitting device and a manufacturing method thereof, including a first signal line and a second signal line intersecting each other on an insulating substrate, a switching thin film transistor connected to the first signal line and the second signal line, a driving thin film transistor connected to the switching thin film transistor, and a light emitting diode (“LD”) connected to the driving thin film transistor. The driving thin film transistor includes a driving control electrode and a driving semiconductor overlapping the driving control electrode, crystallized silicon having a doped region and a non-doped region, a driving gate insulating layer disposed between the driving control electrode and the driving semiconductor, and a driving input electrode and a driving output electrode opposite to each other on the driving semiconductor, wherein the interface between the driving gate insulating layer and the driving semiconductor includes nitrogen gas.

    摘要翻译: 一种有机发光器件及其制造方法,包括在绝缘基板上彼此相交的第一信号线和第二信号线,连接到第一信号线和第二信号线的开关薄膜晶体管,驱动薄膜 连接到开关薄膜晶体管的晶体管和连接到驱动薄膜晶体管的发光二极管(“LD”)。 驱动薄膜晶体管包括驱动控制电极和与驱动控制电极重叠的驱动半导体,具有掺杂区域和非掺杂区域的结晶硅,设置在驱动控制电极和驱动半导体之间的驱动栅极绝缘层,以及 在驱动半导体上相互相对的驱动输入电极和驱动输出电极,其中驱动栅极绝缘层和驱动半导体之间的界面包括氮气。

    Thin film transistor substrate having thin film transistors with improved etching characteristics, method of manufacturing the same, and display apparatus having the same
    38.
    发明授权
    Thin film transistor substrate having thin film transistors with improved etching characteristics, method of manufacturing the same, and display apparatus having the same 有权
    具有改善蚀刻特性的薄膜晶体管的薄膜晶体管基板及其制造方法以及具有该薄膜晶体管的显示装置

    公开(公告)号:US08415666B2

    公开(公告)日:2013-04-09

    申请号:US12405978

    申请日:2009-03-17

    IPC分类号: H01L33/00

    摘要: In a thin film transistor substrate, an active pattern of a thin film transistor includes a lower semiconductor pattern and an upper semiconductor pattern that are patterned through different process steps. The lower semiconductor pattern defines a channel area of the thin film transistor, and the upper semiconductor pattern is connected to a side portion of the lower semiconductor pattern and makes contact with the source electrode and the drain electrode. An etch stop layer is formed on the lower semiconductor pattern corresponding to the channel area, and the etch stop layer is formed through the same patterning process as the lower semiconductor pattern. Also, an ohmic contact pattern is formed on the upper semiconductor pattern, and the ohmic contact pattern is formed by the same patterning process as the upper semiconductor pattern.

    摘要翻译: 在薄膜晶体管基板中,薄膜晶体管的有源图案包括通过不同工艺步骤图案化的下半导体图案和上半导体图案。 下半导体图案限定了薄膜晶体管的沟道区域,并且上半导体图案连接到下半导体图案的侧部并与源电极和漏电极接触。 在对应于沟道区域的下半导体图案上形成蚀刻停止层,并且通过与下半导体图案相同的图案化工艺形成蚀刻停止层。 此外,在上半导体图案上形成欧姆接触图案,并且通过与上半导体图案相同的图案化工艺形成欧姆接触图案。

    Electro-luminescence device including a thin film transistor and method of fabricating an electro-luminescence device
    39.
    发明授权
    Electro-luminescence device including a thin film transistor and method of fabricating an electro-luminescence device 有权
    包括薄膜晶体管的电致发光器件和制造电致发光器件的方法

    公开(公告)号:US07994507B2

    公开(公告)日:2011-08-09

    申请号:US12848648

    申请日:2010-08-02

    IPC分类号: H01L33/00

    CPC分类号: H01L27/3244 H01L27/3262

    摘要: An electro-luminescence device including an electro-luminescence element and a thin film transistor electrically connected to the electro-luminescence element. The thin film transistor includes a gate electrode formed over a substrate, an insulating layer formed over the gate electrode, and a first semiconductor pattern formed over the insulating layer. An etch stop layer is formed over the first semiconductor layer. A second semiconductor pattern is formed over the etch stop layer at one side of the etch stop layer, and a third semiconductor pattern is formed over the etch stop layer at another side of the etch stop layer. A source electrode is formed over the second semiconductor pattern, and a drain electrode is formed over the third semiconductor pattern.

    摘要翻译: 一种电致发光器件,包括电连接到电致发光元件的电致发光元件和薄膜晶体管。 薄膜晶体管包括形成在衬底上的栅电极,形成在栅电极上的绝缘层,以及形成在绝缘层上的第一半导体图案。 在第一半导体层上形成蚀刻停止层。 在蚀刻停止层的一侧上的蚀刻停止层上形成第二半导体图案,并且在蚀刻停止层的另一侧上形成第三半导体图案。 在第二半导体图案上形成源电极,在第三半导体图案上形成漏电极。

    Display device and driving method thereof
    40.
    发明授权
    Display device and driving method thereof 有权
    显示装置及其驱动方法

    公开(公告)号:US07773057B2

    公开(公告)日:2010-08-10

    申请号:US11101012

    申请日:2005-04-07

    IPC分类号: G09G3/30

    摘要: A display device is provided, which includes: light emitting elements; switching transistors transmitting data signals in response to scanning signals; driving transistors, each driving transistor electrically connected to a driving signal line and one of the switching transistors and supplying a current to the light emitting elements in response to an output signal of the one of the switching transistors and the driving signal of the driving signal line; and a first capacitor electrically connected between each driving transistor and each driving signal line; and a second capacitor electrically connected between each light emitting element and each driving transistor, wherein the first and the second capacitors transmit the driving signal by capacitive coupling.

    摘要翻译: 提供了一种显示装置,其包括:发光元件; 开关晶体管响应于扫描信号传输数据信号; 驱动晶体管,每个驱动晶体管电连接到驱动信号线和所述开关晶体管之一,并且响应于所述开关晶体管中的一个的输出信号和所述驱动信号线的驱动信号而向所述发光元件提供电流 ; 以及电连接在每个驱动晶体管和每个驱动信号线之间的第一电容器; 以及电连接在每个发光元件和每个驱动晶体管之间的第二电容器,其中第一和第二电容器通过电容耦合来传输驱动信号。