摘要:
An organic light emitting diode (“OLED”) display includes a substrate, a gate line, a data line, a driving voltage line, a light blocking member, a switching thin film transistor (“TFT”), a driving TFT, and an OLED, wherein the driving voltage line includes a portion parallel to at least one of the gate line and the data line, the light blocking member is formed under at least one of the gate line, the data line, and the driving voltage line, the switching TFT is connected to the gate line and the data line and includes an amorphous semiconductor, the driving TFT is connected to the switching TFT and includes a polycrystalline semiconductor, and the OLED is connected to the driving TFT.
摘要:
A driving circuit for an organic light emitting display apparatus includes first and second switching elements and a driving element. The first switching element is controlled by a scan signal supplied from a scan line. The second switching element is controlled by the scan signal. The driving element provides an end of an organic electroluminescent element with a first reference voltage via the second switching element. The driving element has amorphous silicon thin film transistors so that the manufacturing cost of the organic light emitting display apparatus may be reduced.
摘要:
An electro-luminescence device including an electro-luminescence element and a thin film transistor electrically connected to the electro-luminescence element. The thin film transistor includes a gate electrode formed over a substrate, an insulating layer formed over the gate electrode, and a first semiconductor pattern formed over the insulating layer. An etch stop layer is formed over the first semiconductor layer. A second semiconductor pattern is formed over the etch stop layer at one side of the etch stop layer, and a third semiconductor pattern is formed over the etch stop layer at another side of the etch stop layer. A source electrode is formed over the second semiconductor pattern, and a drain electrode is formed over the third semiconductor pattern.
摘要:
An organic light emitting diode (“OLED”) display includes; a substrate, first and second signal lines which intersect each other and are disposed on the substrate, a switching control electrode connected to the first signal line, a switching input electrode connected to the second signal line, a switching output electrode disposed substantially opposite the switching input electrode with respect to the switching control electrode, a switching semiconductor which partially overlaps the switching input electrode and the switching output electrode, first and second driving control electrodes connected to the switching output electrode, a driving semiconductor disposed between the first and second driving control electrodes, a driving input electrode and a driving output electrode which partially overlap the driving semiconductor and are disposed substantially opposite each other with respect to the driving semiconductor, a first electrode connected to the driving output electrode, a second electrode which faces the first electrode, and a light emitting member disposed between the first electrode and the second electrode.
摘要:
A display device is provided, including light emitting elements, first switching transistors transmitting data signals in response to scanning signals, second switching transistors transmitting a reverse bias voltage in response to a switching signal, capacitors charging voltages based on the data signals and discharging based on the reverse bias voltage; and driving transistors, each driving a transistor connected to a driving voltage and turning on and off in response to the voltage charged in the capacitor to connect and disconnect a signal passage from the driving voltage to the light emitting element.
摘要:
An electro-luminescence device including an electro-luminescence element and a thin film transistor electrically connected to the electro-luminescence element. The thin film transistor includes a gate electrode formed over a substrate, an insulating layer formed over the gate electrode, and a first semiconductor pattern formed over the insulating layer. An etch stop layer is formed over the first semiconductor layer. A second semiconductor pattern is formed over the etch stop layer at one side of the etch stop layer, and a third semiconductor pattern is formed over the etch stop layer at another side of the etch stop layer. A source electrode is formed over the second semiconductor pattern, and a drain electrode is formed over the third semiconductor pattern.
摘要:
An organic light emitting device and a manufacturing method thereof, including a first signal line and a second signal line intersecting each other on an insulating substrate, a switching thin film transistor connected to the first signal line and the second signal line, a driving thin film transistor connected to the switching thin film transistor, and a light emitting diode (“LD”) connected to the driving thin film transistor. The driving thin film transistor includes a driving control electrode and a driving semiconductor overlapping the driving control electrode, crystallized silicon having a doped region and a non-doped region, a driving gate insulating layer disposed between the driving control electrode and the driving semiconductor, and a driving input electrode and a driving output electrode opposite to each other on the driving semiconductor, wherein the interface between the driving gate insulating layer and the driving semiconductor includes nitrogen gas.
摘要:
In a thin film transistor substrate, an active pattern of a thin film transistor includes a lower semiconductor pattern and an upper semiconductor pattern that are patterned through different process steps. The lower semiconductor pattern defines a channel area of the thin film transistor, and the upper semiconductor pattern is connected to a side portion of the lower semiconductor pattern and makes contact with the source electrode and the drain electrode. An etch stop layer is formed on the lower semiconductor pattern corresponding to the channel area, and the etch stop layer is formed through the same patterning process as the lower semiconductor pattern. Also, an ohmic contact pattern is formed on the upper semiconductor pattern, and the ohmic contact pattern is formed by the same patterning process as the upper semiconductor pattern.
摘要:
An electro-luminescence device including an electro-luminescence element and a thin film transistor electrically connected to the electro-luminescence element. The thin film transistor includes a gate electrode formed over a substrate, an insulating layer formed over the gate electrode, and a first semiconductor pattern formed over the insulating layer. An etch stop layer is formed over the first semiconductor layer. A second semiconductor pattern is formed over the etch stop layer at one side of the etch stop layer, and a third semiconductor pattern is formed over the etch stop layer at another side of the etch stop layer. A source electrode is formed over the second semiconductor pattern, and a drain electrode is formed over the third semiconductor pattern.
摘要:
A display device is provided, which includes: light emitting elements; switching transistors transmitting data signals in response to scanning signals; driving transistors, each driving transistor electrically connected to a driving signal line and one of the switching transistors and supplying a current to the light emitting elements in response to an output signal of the one of the switching transistors and the driving signal of the driving signal line; and a first capacitor electrically connected between each driving transistor and each driving signal line; and a second capacitor electrically connected between each light emitting element and each driving transistor, wherein the first and the second capacitors transmit the driving signal by capacitive coupling.