公开(公告)号：US20240194644A1

公开(公告)日：2024-06-13

申请号：US18587908

申请日：2024-02-26

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jen-Yuan Chang

IPC分类号： H01L25/065 ,  H01L23/00 ,  H01L25/00

CPC分类号： H01L25/0652 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  H01L25/50 ,  H01L2224/05647 ,  H01L2224/08145 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2225/06555

摘要： A semiconductor package includes: a base substrate structure; and a plurality of die groups disposed on a top surface of the based substrate structure, the plurality of die groups comprising a first die group and a second die group neighboring to each other. The first die group includes a plurality of first dies stacked parallel to each other and parallel to a front surface of the first die group, the front surface of the first die group and the top surface intersect at a first edge extending in a first direction. The second die group includes a plurality of second dies stacked parallel to each other and parallel to a front surface of the second die group, the front surface of the second die group and the top surface intersect at a second edge extending in a second direction not parallel to the first direction.

公开(公告)号：US11940662B2

公开(公告)日：2024-03-26

申请号：US17081763

申请日：2020-10-27

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Jen-Yuan Chang ,  Chia-Ping Lai

IPC分类号： G02B6/42 ,  G02B6/43

CPC分类号： G02B6/4277 ,  G02B6/4206 ,  G02B6/43

摘要： The semiconductor structure includes a die, a dielectric layer surrounding the die, a photoelectric device disposed adjacent to the die and surrounded by the dielectric layer, a first opening extending through the redistribution layer and configured to receive a light-conducting member, and a metallic shield extending at least partially through the redistribution layer and surrounding the first opening. A method for forming a semiconductor structure includes receiving a die; forming a dielectric layer to surround the die; and disposing a photoelectric device surrounded by the dielectric layer; forming a redistribution layer over the die, the dielectric layer and the photoelectric device; and removing a portion of the redistribution layer to form a first opening over the photoelectric device. A metallic shield extending at least partially through the redistribution layer and surrounding the first opening is formed during the formation of the redistribution layer.

公开(公告)号：US11935798B2

公开(公告)日：2024-03-19

申请号：US17304982

申请日：2021-06-29

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jen-Yuan Chang

IPC分类号： H01L21/66 ,  H01L23/00 ,  H01L23/48 ,  H01L25/10

CPC分类号： H01L22/32 ,  H01L22/22 ,  H01L22/34 ,  H01L23/481 ,  H01L24/32 ,  H01L25/105 ,  H01L2224/32146 ,  H01L2225/1047

摘要： A control circuit is included in a first die of a stacked semiconductor device. The first die further includes a transistor that is electrically connected to the control circuit. The transistor is configured to be controlled by the control circuit to selectively block a die-to-die interconnect. In this way, the die-to-die interconnect may be selectively blocked to isolate the first die and a second die of the stacked semiconductor device for independent testing after bonding. This may increase the effectiveness of a testing to identify and isolate defects in the first die or the second die, which may further increase the effectiveness of performing rework or repair on the stacked semiconductor device.

公开(公告)号：US20240014172A1

公开(公告)日：2024-01-11

申请号：US18473273

申请日：2023-09-24

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jen-Yuan Chang

IPC分类号： H01L25/065 ,  H01L23/00 ,  H01L25/00

CPC分类号： H01L25/0652 ,  H01L24/08 ,  H01L24/80 ,  H01L25/50 ,  H01L24/05 ,  H01L2225/06555 ,  H01L2224/08145 ,  H01L2224/80896 ,  H01L2224/80895 ,  H01L2224/05647

摘要： A method of fabricating a semiconductor package includes: providing a first die group including a plurality of first dies stacked parallel to a front surface of the first die group; providing a second die group including a plurality of second dies parallel to a front surface of the second die group; providing a base substrate structure comprising a substrate characterized by a lattice crystalline plane extending in a third direction; bonding the first die group on the base substrate structure, wherein the first edge extends in a first direction, and the first direction and the third direction define a first angle; and bonding the second die group on the base substrate structure, wherein the second edge extends in a second direction, and the second direction and the third direction define a second angle, and at least one of the first angle and the second angle is not zero.

公开(公告)号：US11854867B2

公开(公告)日：2023-12-26

申请号：US18061990

申请日：2022-12-05

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Jen-Yuan Chang

IPC分类号： H01L21/768 ,  H01L21/306 ,  H01L21/56 ,  H01L23/00

CPC分类号： H01L21/76802 ,  H01L21/30604 ,  H01L21/565 ,  H01L21/76898 ,  H01L24/05 ,  H01L24/32 ,  H01L2224/05026 ,  H01L2224/32151 ,  H01L2924/351

摘要： A method for forming a semiconductor structure includes receiving a first die having a first interconnect structure and a first bonding layer over the first interconnect structure, and a second die having a second interconnect structure and a second bonding layer over the second interconnect structure; forming a recess indenting into the first bonding layer; and forming a positioning member on the second bonding layer. The method further includes bonding the second die over the first die; and disposing the positioning member into the recess. The positioning member includes dielectric, is surrounded by the first bonding layer, and is isolated from the first interconnect structure and the second interconnect structure.

公开(公告)号：US11837586B2

公开(公告)日：2023-12-05

申请号：US17351105

申请日：2021-06-17

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Jen-Yuan Chang ,  Sheng-Chih Wang

IPC分类号： H01L25/10 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L21/48 ,  H01L21/56 ,  H01L25/00

CPC分类号： H01L25/105 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/563 ,  H01L21/565 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/49822 ,  H01L23/49838 ,  H01L24/16 ,  H01L25/50 ,  H01L2224/16227 ,  H01L2924/18161

摘要： A package structure includes a package substrate, a first die, a second die, a first underfill, and a second underfill. The first die and a second die are disposed on the package substrate. The first underfill is between the first die and the package substrate, and the first underfill includes a first extension portion extending from a first sidewall of the first die toward the second die. The second underfill is between the second die and the package substrate, and the second underfill includes a second extension portion extending from a second sidewall of the second die toward the first die, the second extension portion overlapping the first extension portion on the package substrate.

公开(公告)号：US20230307418A1

公开(公告)日：2023-09-28

申请号：US17702764

申请日：2022-03-23

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jen-Yuan Chang

IPC分类号： H01L25/065 ,  H01L23/00 ,  H01L25/00

CPC分类号： H01L25/0657 ,  H01L24/06 ,  H01L24/05 ,  H01L24/08 ,  H01L25/50 ,  H01L24/80 ,  H01L2224/08145 ,  H01L2224/06515 ,  H01L2224/05647 ,  H01L2224/80001 ,  H01L2924/3512

摘要： A semiconductor package is provided. The semiconductor package includes: a bottom die having a first bonding layer formed at a top surface of the bottom die; a top die on the bottom die, wherein the top die comprises a second bonding layer formed at a bottom surface of the top die, and the top die is bonded to the bottom die by bonding the first bonding layer and the second bonding layer using hybrid bonding; a dummy die on the bottom die and lateral to the top die, wherein the dummy die comprises a third bonding layer formed at a bottom surface of the dummy die, and the dummy die is bonded to the bottom die by bonding the first bonding layer and the third bonding layer; and at least one dummy metal pad formed in one of the first bonding layer and the third bonding layer and not electrically connected.

公开(公告)号：US20230307281A1

公开(公告)日：2023-09-28

申请号：US17700497

申请日：2022-03-22

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jen-Yuan Chang

IPC分类号： H01L21/68 ,  H01L21/683 ,  H01L21/67 ,  B65G47/91 ,  B65G47/90

CPC分类号： H01L21/681 ,  H01L21/6838 ,  H01L21/67121 ,  B65G47/91 ,  B65G47/905

摘要： A pick-and-place system is provided. The pick-and-place system includes: a wafer holder configured to hold a bottom die; a gantry having a stabilizer extending downwardly; a primary drive mechanism connected to the gantry and configured to drive the gantry horizontally and vertically; a suction head configured to hold a top die; and a secondary drive mechanism located at the gantry and connected to the suction head and configured to drive the suction head horizontally and vertically to place the top die on the bottom die at a target position. The primary drive mechanism drives the gantry vertically until the stabilizer is in contact with the bottom die before the secondary drive mechanism drives the suction head.

公开(公告)号：US20230137490A1

公开(公告)日：2023-05-04

申请号：US17586781

申请日：2022-01-28

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jen-Yuan Chang

IPC分类号： H01L23/00

摘要： A method for placing a semiconductor onto a substrate is provided. The method includes the following steps: transferring, using a placement tool, the semiconductor along a path over onto the substrate; lowering, using the placement tool, the semiconductor to a predetermined height above the substrate; titling, using the placement tool, the semiconductor, to a predetermined angle; determining, using the placement tool, a first contact point of the semiconductor to the substrate at the predetermined angle; determining, using the placement tool, the first contact point is shift-off from an alignment position on the semiconductor with respect to the substrate; adjusting, using the placement tool, the first contact point to correct the shift-off; and lowering, using the placement tool, the semiconductor to make a first contact with the substrate at the corrected first contact point.

公开(公告)号：US20220352119A1

公开(公告)日：2022-11-03

申请号：US17406097

申请日：2021-08-19

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jen-Yuan Chang

IPC分类号： H01L25/065 ,  H01L23/24 ,  H01L23/31 ,  H01L25/00 ,  H01L21/56 ,  H01L23/20

摘要： A semiconductor device includes a package substrate, and a first die group bonded onto the package substrate. The first die group characterized by a first thickness. The semiconductor device also has a second die group bonded onto the package substrate. The second die group characterized by a second thickness. The semiconductor device further includes a carrier substrate disposed on the first die group. The carrier substrate is characterized by a third thickness that is a function of a difference between the first thickness and the second thickness. A molding compound material is disposed on the package substrate and covers the first die group and the second die group. The molding compound material includes a cavity between the first die group and the second die group.