-
公开(公告)号：US20210265562A1
公开(公告)日：2021-08-26
申请号：US17116236
申请日：2020-12-09
Applicant: TDK CORPORATION
Inventor： Shinto ICHIKAWA , Kazuumi INUBUSHI , Katsuyuki NAKADA
Abstract: A magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a non-magnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, and an additive-containing layer disposed at any position in a laminating direction, at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy containing at least one of boron and carbon, at least part of which is crystallized, and the additive-containing layer is a non-magnetic layer containing at least one of boron and carbon, and any one element selected from the group made of Ti, V, Cr, Cu, Zn, Zr, Mo, Ru, Pd, Ta, W, Ir, Pt and Au.
-
公开(公告)号：US20210028355A1
公开(公告)日：2021-01-28
申请号：US17060299
申请日：2020-10-01
Applicant: TDK CORPORATION
Inventor： Shinto ICHIKAWA , Katsuyuki NAKADA , Tomoyuki SASAKI
Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer. The tunnel barrier layer is a stacked body including one or more first oxide layers having a spinel structure and one or more second oxide layers having a spinel structure with a composition which is different from a composition of the first oxide layer.
-
公开(公告)号：US20210028354A1
公开(公告)日：2021-01-28
申请号：US17000481
申请日：2020-08-24
Applicant: TDK CORPORATION
Inventor： Tomoyuki SASAKI , Tatsuo SHIBATA , Katsuyuki NAKADA , Yoshitomo TANAKA
Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure in which cations are disordered, and contains a divalent cation of a non-magnetic element, a trivalent cation of a non-magnetic element, oxygen, and one of nitrogen and fluorine.
-
34.发明申请公开(公告)号：US20200266336A1
公开(公告)日：2020-08-20
申请号：US16349537
申请日：2018-10-30
Applicant: TDK CORPORATION
Inventor： Katsuyuki NAKADA , Yohei SHIOKAWA
Abstract: This spin-orbit-torque magnetization rotating element includes a spin-orbit torque wiring extending in a first direction and a first ferromagnetic layer laminated on the spin-orbit torque wiring, wherein the spin-orbit torque wiring includes a compound represented by XYZ or X2YZ with respect to a stoichiometric composition.
-
公开(公告)号：US20200251268A1
公开(公告)日：2020-08-06
申请号：US16777036
申请日：2020-01-30
Applicant: TDK Corporation
Inventor： Katsuyuki NAKADA
IPC: H01F10/193 , H01F10/32 , G01R33/09
Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic spacer layer between the first ferromagnetic layer and the second ferromagnetic layer, in which at least one of the first ferromagnetic layer and the second ferromagnetic layer contains a metal compound having a half-Heusler type crystal structure, the metal compound contains a functional material, and X atoms, Y atoms, and Z atoms which form a unit lattice of the half-Heusler type crystal structure, and the functional material has an atomic number lower than an atomic number of any of the X atoms, the Y atoms, and the Z atoms.
-
Patent Agency Ranking
公开(公告)号：US20200212295A1
公开(公告)日：2020-07-02
申请号：US16364905
申请日：2019-03-26
Applicant: TDK CORPORATION
Inventor： Tsuyoshi SUZUKI , Katsuyuki NAKADA , Shinto ICHIKAWA
Abstract: A magnetoresistive effect element includes a first ferromagnetic layer and a tunnel barrier layer. The tunnel barrier layer has a main body region and a first interface region. The main body region has an oxide material of a first spinel structure represented by a general formula LM2O4. The first interface region has at least one element X selected from a group consisting of elements having a valence of 2 and elements having a valence of 3 excluding Al and has an oxide material of a second spinel structure represented by a general formula DG2O4(D represents one or more kinds of elements including Mg or the element X, and G represents one or more kinds of elements including Al or the element X). A content of the element X contained in the first interface region is larger than that of the element X contained in the main body region.
-
公开(公告)号：US20200075845A1
公开(公告)日：2020-03-05
申请号：US16676920
申请日：2019-11-07
Applicant: TDK CORPORATION
Inventor： Kazuumi INUBUSHI , Katsuyuki NAKADA
Abstract: A magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a nonmagnetic layer, and at least one of a first nonmagnetic insertion layer provided directly on a lower surface of the nonmagnetic layer and a second nonmagnetic insertion layer provided directly on an upper surface of the nonmagnetic layer. The first nonmagnetic insertion layer and the second nonmagnetic insertion layer include an Ag alloy represented by General Formula (1): AgγX1-γ where X indicates one element selected from the group consisting of Al, Cu, Ga, Ge, As, Y, La, Sm, Yb, and Pt, and 0
-
公开(公告)号：US20180351090A1
公开(公告)日：2018-12-06
申请号：US15994057
申请日：2018-05-31
Applicant: TDK CORPORATION
Inventor： Eiji SUZUKI , Katsuyuki NAKADA , Shogo YONEMURA
CPC classification number: H01L43/08 , H01F10/3268 , H01L43/10
Abstract: To provide a laminated structure and a spin modulation element capable of stably modulating spin polarizability of a ferromagnetic material by an electric field. A laminated structure according to an embodiment includes: a ferromagnetic layer; and a multiferroic layer formed on one surface of the ferromagnetic layer, wherein the multiferroic layer includes a first region having a rhombohedral crystal structure formed on a surface side on the ferromagnetic layer side and a second region having a tetragonal crystal structure formed further inside than the first region.
-
公开(公告)号：US20170279039A1
公开(公告)日：2017-09-28
申请号：US15467168
申请日：2017-03-23
Applicant: TDK CORPORATION
Inventor： Kazuumi INUBUSHI , Katsuyuki NAKADA
Abstract: A magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic metal layer interposed between the first ferromagnetic layer and the second ferromagnetic layer. The first ferromagnetic layer and the second ferromagnetic layer include a Heusler alloy consisting of a CoMnSi alloy. A ratio x of Mn with respect to Co2 in each of the first ferromagnetic layer and the second ferromagnetic layer is 0.7≦x≦1.7. Compositions of the first ferromagnetic layer and the second ferromagnetic layer are different from each other.
-
公开(公告)号：US20150061393A1
公开(公告)日：2015-03-05
申请号：US14471974
申请日：2014-08-28
Applicant: TDK CORPORATION
Inventor： Kuniyasu ITO , Tetsuya SHIBATA , Takahiro SUWA , Katsuyuki NAKADA , Masato TAKAHASHI
IPC: G05F7/00
CPC classification number: G05F7/00 , Y10T307/549
Abstract: In a variable voltage circuit 50, a resistive element 104 and a magnetoresistance effect element 108 are connected in series between a first voltage source 101 and a second voltage source 102. A magnetic field supply mechanism 121 that applies a magnetic field to the magnetoresistance effect element 108 is provided in the vicinity of the magnetoresistance effect element 108. The magnetic field supply mechanism 121 can vary the resistance value of the magnetoresistance effect element 108 by varying the magnetic field. A node 106 between the resistive element 104 and the magnetoresistance effect element 108 is connected to an output terminal 103.
Abstract translation: 在可变电压电路50中，电阻元件104和磁阻效应元件108串联连接在第一电压源101和第二电压源102之间。磁场供应机构121将磁场施加到磁阻效应元件 108设置在磁阻效应元件108的附近。磁场供给机构121可以通过改变磁场来改变磁阻效应元件108的电阻值。 电阻元件104和磁阻效应元件108之间的节点106连接到输出端子103。
-
-
-
-
-
-
-
-
-
Search Results
78
records
(took 0.022 seconds)
