公开(公告)号：US20240369937A1

公开(公告)日：2024-11-07

申请号：US18773322

申请日：2024-07-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tai-Yu CHEN ,  Shang-Chieh CHIEN ,  Sheng-Kang YU ,  Li-Jui CHEN ,  Heng-Hsin LIU

IPC: G03F7/00 ,  G06N20/00

Abstract: An extreme ultraviolet (EUV) photolithography system generates EUV light by irradiating droplets with a laser. The system includes a collector and a plurality of vibration sensors coupled to the collector. The vibration sensors generate sensor signals indicative of shockwaves from laser pulses and impacts from debris. The system utilizes the sensor signals to improve the quality of EUV light generation.

公开(公告)号：US20240365460A1

公开(公告)日：2024-10-31

申请号：US18769896

申请日：2024-07-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Kuang SUN ,  Ming-Hsun TSAI ,  Wei-Shin CHENG ,  Cheng-Hao LAI ,  Hsin-Feng CHEN ,  Chiao-Hua CHENG ,  Cheng-Hsuan WU ,  Yu-Fa LO ,  Jou-Hsuan LU ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Heng-Hsin LIU

IPC: H05G2/00 ,  G03F7/00 ,  G05D23/19

CPC classification number: H05G2/006 ,  G03F7/70033 ,  G05D23/19

Abstract: The present disclosure is directed to a modularized vessel droplet generator assembly (MGDVA) including a droplet generator assembly (DGA). Under a normal operation, the liquid fuel moves along an operation pathway extending through the DGA to eject or discharge the liquid fuel (e.g., liquid tin) from a nozzle of the DGA into a vacuum chamber. The liquid fuel in the vacuum chamber is then exposed to a laser generating an extreme ultra-violet (EUV) light. Under a service operation, the operation pathway is closed and a service pathway extending through the DGA is opened. A gas is introduced into the service pathway forming a gas-liquid interface between the gas and the liquid fuel. The gas-liquid interface is driven to an isolation valve directly adjacent to the DGA. In other words, the gas pushes back the liquid fuel to the isolation valve. Once the gas-liquid interface reaches the isolation valve, the isolation valve is closed isolating the DGA from the liquid fuel.

公开(公告)号：US20240004304A1

公开(公告)日：2024-01-04

申请号：US17855357

申请日：2022-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng Hung TSAI ,  Sheng-Kang YU ,  Shang-Chieh CHIEN ,  Heng-Hsin LIU ,  Li-Jui CHEN

IPC: G03F7/20

CPC classification number: G03F7/70175 ,  G03F7/70033

Abstract: Methods and apparatuses for a lithography exposure process are described. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The methods utilized and the apparatuses include two or more collectors for collecting the generated EUV light and reflecting the collected EUV light to a focal point of one of the collectors. In some embodiments, one of the two collectors includes a ring-shaped collector.

公开(公告)号：US20230375944A1

公开(公告)日：2023-11-23

申请号：US17750151

申请日：2022-05-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shang-Chieh CHIEN ,  Tzu-Jung PAN ,  Wei-Shin CHENG ,  Cheng Hung TSAI ,  Li-Jui CHEN ,  Heng-Hsin LIU

IPC: G03F7/20

CPC classification number: G03F7/7065 ,  G03F7/70033 ,  G03F7/7085 ,  G03F7/70025 ,  G03F7/70041

Abstract: An extreme ultraviolet (EUV) photolithography system includes a scanner that directs the EUV light onto an EUV reticle. The photolithography system includes one or more contamination reduction structures positioned within the scanner and configured to attract and decompose contaminant particles within the scanner. The contamination reduction structure includes a surface material that is highly electronegative.

公开(公告)号：US20220269182A1

公开(公告)日：2022-08-25

申请号：US17501848

申请日：2021-10-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tai-Yu CHEN ,  Shang-Chieh CHIEN ,  Sheng-Kang YU ,  Li-Jui CHEN ,  Heng-Hsin LIU

IPC: G03F7/20 ,  G06N20/00

Abstract: An extreme ultraviolet (EUV) photolithography system generates EUV light by irradiating droplets with a laser. The system includes a collector and a plurality of vibration sensors coupled to the collector. The vibration sensors generate sensor signals indicative of shockwaves from laser pulses and impacts from debris. The system utilizes the sensor signals to improve the quality of EUV light generation.

公开(公告)号：US20200379361A1

公开(公告)日：2020-12-03

申请号：US16994804

申请日：2020-08-17

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yung-Yao LEE ,  Heng-Hsin LIU ,  Hung-Ming KUO ,  Jui-Chun PENG

IPC: G03F9/00 ,  G03F7/20 ,  H01L21/027 ,  H01L21/67

Abstract: In a method executed in an exposure apparatus, a focus control effective region and a focus control exclusion region are set based on an exposure map and a chip area layout within an exposure area. Focus-leveling data are measured over a wafer. A photo resist layer on the wafer is exposed with an exposure light. When a chip area of a plurality of chip areas of the exposure area is located within an effective region of a wafer, the chip area is included in the focus control effective region, and when a part of or all of a chip area of the plurality of chip areas is located on or outside a periphery of the effective region of the wafer, the chip area is included in the focus control exclusion region In the exposing, a focus-leveling is controlled by using the focus-leveling data measured at the focus control effective region.