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    Radiation Source Apparatus
    32.
    发明申请
    Radiation Source Apparatus 审中-公开

    公开(公告)号：US20200314990A1

    公开(公告)日：2020-10-01

    申请号：US16365905

    申请日：2019-03-27

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Ssu-Yu CHEN ,  Chi YANG ,  Che-Chang HSU ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Po-Chung CHENG

    IPC: H05G2/00 ,  G03F1/58 ,  G03F7/20 ,  G03F1/24

    Abstract: A radiation source apparatus includes a vessel, a laser, a collector, a container, and a cone structure. The vessel has an exit aperture. The laser is at one end of the vessel and configured to excite a target material to form a plasma. The collector is in the vessel and configured to collect at least radiation of a desired wavelength emitted by the plasma and to direct the collected radiation to the exit aperture of the vessel. The container is configured to receive a residue of the plasma. The cone structure is between the collector and the exit aperture and located besides the container. The cone structure includes a first inner sidewall, and a second inner sidewall adjoining the first inner sidewall and closer to the container than the first inner sidewall, and a first baffle assembly on the first inner sidewall.

    RADIATION SOURCE FOR LITHOGRAPHY PROCESS
    33.
    发明申请
    RADIATION SOURCE FOR LITHOGRAPHY PROCESS 审中-公开

    公开(公告)号：US20200278617A1

    公开(公告)日：2020-09-03

    申请号：US16876442

    申请日：2020-05-18

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Shang-Ying WU ,  Shang-Chieh CHIEN ,  Bo-Tsun LIU ,  Li-Jui CHEN ,  Po-Chung CHENG

    IPC: G03F7/20 ,  H05G2/00

    Abstract: A method for a lithography exposure process is provided. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The method further includes reflecting the EUV light with a collector. The method also includes discharging a cleaning gas over the collector through a gas distributor positioned next to the collector. A portion of the cleaning gas is converted to free radicals before the cleaning gas leaves the gas distributor, and the free radicals are discharged over the collector along with the cleaning gas.

    EXTREME ULTRAVIOLET RADIATION SOURCE
    34.
    发明申请
    EXTREME ULTRAVIOLET RADIATION SOURCE 审中-公开

    公开(公告)号：US20200057181A1

    公开(公告)日：2020-02-20

    申请号：US16538727

    申请日：2019-08-12

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Chi YANG ,  Sheng-Ta LIN ,  Jen-Yang CHUNG ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Po-Chung CHENG

    IPC: G02B5/08 ,  G03F1/24 ,  G21K1/06

    Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a chamber and the chamber encloses an EUV collector mirror. The EUV collector mirror is configured to collect and direct EUV radiation generated in the chamber and at least three exhaust ports are configured to remove debris from the chamber. In some embodiments, the exhaust ports are symmetrically arranged in a plane perpendicular to an optical axis of the collector mirror. In some embodiments, three exhaust ports are disposed such that an angle between any two adjacent ports is 120 degrees. In some embodiments, four exhaust ports are disposed such that an angle between any two adjacent ports is 90 degrees. In some embodiments, the chamber is configured to maintain a pressure in a range from 0.1 mbar to 10 mbar.

    EUV RADIATION SOURCE FOR LITHOGRAPHY EXPOSURE PROCESS
    35.
    发明申请
    EUV RADIATION SOURCE FOR LITHOGRAPHY EXPOSURE PROCESS 审中-公开

    公开(公告)号：US20200045800A1

    公开(公告)日：2020-02-06

    申请号：US16149643

    申请日：2018-10-02

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chun-Chia HSU ,  Kuan-Hung CHEN ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Po-Chung CHENG

    IPC: H05G2/00 ,  G21K1/06 ,  G03F7/20

    Abstract: An extreme ultraviolet (EUV) lithography system is provided. The EUV lithography system includes the above-mentioned extreme ultraviolet (EUV) radiation source. The EUV lithography system further includes a collector configured to collect and reflect the EUV radiation and a mask stage configured to secure an EUV mask. The EUV lithography system also includes a wafer stage configured to secure a semiconductor wafer. In addition, the EUV lithography system includes one or more optical modules configured to direct the EUV radiation from the radiation source to image an integrated circuit (IC) pattern defined on the EUV mask onto the semiconductor wafer.

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