公开(公告)号：US20060138907A1

公开(公告)日：2006-06-29

申请号：US11301711

申请日：2005-12-13

申请人： Takaaki Koizumi ,  Hirofumi Yamaguchi ,  Iwao Ohwada ,  Tsutomu Nanataki

发明人： Takaaki Koizumi ,  Hirofumi Yamaguchi ,  Iwao Ohwada ,  Tsutomu Nanataki

IPC分类号： H01L41/08 ,  H01L41/04

CPC分类号： H01L41/107 ,  H01L41/273 ,  H01L41/43

摘要： Heat-treating niobium pentoxide powder causes the powder to become agglutinated and bonded while phase transformation from an orthorhombic crystal to a monoclinic crystal occurs and resultantly bar-shaped c-axis-oriented niobium pentoxide particles, the longitudinal direction of which is identical to the c axis direction, are formed. A slurry is produced by mixing the c-axis-oriented niobium pentioxide particles with lithium carbonate and a binder and is molded as a tape by a doctor blade method to form a sheet-shaped compact. By so doing, bar-shaped or columnar c-axis oriented niobium pentoxide particles are aligned in the direction of forming the tape and in the meantime a compact filled with lithium carbonate is produced. By heating the compact, a dielectric layer including a c-axis-oriented lithium niobate polycrystalline material is produced.

摘要翻译： 热处理五氧化二铌粉末会导致粉末凝结和结合，同时发生从正交晶体到单斜晶体的相转变，导致棒形c轴取向的五氧化二铌颗粒，其纵向方向与c相同 轴方向。 通过将c轴取向的二氧化铌颗粒与碳酸锂和粘合剂混合制成浆料，并通过刮刀法将其模制成带，以形成片状压块。 通过这样做，棒状或柱状的c轴取向的五氧化二铌颗粒沿着形成带的方向排列，同时产生填充有碳酸锂的压块。 通过加热该压块，产生包含c轴取向的铌酸锂多晶材料的电介质层。

公开(公告)号：US20130051097A1

公开(公告)日：2013-02-28

申请号：US13593873

申请日：2012-08-24

申请人： Nozomu Katsumata ,  Masaki Asari ,  Hirofumi Yamaguchi ,  Shuichi Muramatsu ,  Ryosuke Tonooka ,  Shinji Komatsu

发明人： Nozomu Katsumata ,  Masaki Asari ,  Hirofumi Yamaguchi ,  Shuichi Muramatsu ,  Ryosuke Tonooka ,  Shinji Komatsu

IPC分类号： H02M7/04

CPC分类号： H02M7/17 ,  H02M7/1626

摘要： A power source device for rectifying the output of an AC generator in which magneto coils are in a star-shaped connection in three phases. The device includes a control rectifier circuit configured from a first control rectifier circuit for performing full-wave rectification on three-phase AC voltages, and a second control rectifier circuit for performing full-wave rectification on AC voltages obtained between neutral and each of two-phase AC output terminals selected from the three-phase AC output terminals of the generator, as well as on AC voltage obtained between the selected two-phase AC output terminals; and a controller controlling the first and second circuits so that the output of the first circuit is supplied to the load when the rotational speed of the generator is equal/less than a set speed, and the output of the second circuit is supplied to the load when the rotational speed exceeds the set speed.

摘要翻译： 一种用于整流其中发电机线圈处于星形连接中的三相发电机的输出的电源装置。 该装置包括由用于在三相AC电压上进行全波整流的第一控制整流电路配置的控制整流电路，以及用于在中性线和二线电压之间获得的交流电压进行全波整流的第二控制整流电路， 从发电机的三相交流输出端子选择的三相交流输出端子，以及所选择的两相交流输出端子之间获得的交流电压; 以及控制器，其控制第一和第二电路，使得当发电机的转速等于/小于设定速度时，第一电路的输出被提供给负载，并且第二电路的输出被提供给负载 当转速超过设定速度时。

公开(公告)号：US08269402B2

公开(公告)日：2012-09-18

申请号：US12618925

申请日：2009-11-16

申请人： Hirofumi Yamaguchi ,  Shuichi Ozawa ,  Yuji Noguchi ,  Masaru Miyayama

发明人： Hirofumi Yamaguchi ,  Shuichi Ozawa ,  Yuji Noguchi ,  Masaru Miyayama

IPC分类号： H01L41/187

CPC分类号： H01L41/1878 ,  H01L41/083 ,  H01L41/0973 ,  H01L41/273 ,  H01L41/314 ,  H01L41/43 ,  Y10T29/42

摘要： Piezoelectric/electrostrictive ceramics having the composition represented by the general formula: xBNT-yBKT-zBT (x+y+z=1) are provided, wherein at least one kind among A-site elements are allowed to become deficient from stoichiometry in which a point (x, y, z) representing content ratios x, y and z of (Bi1/2Na1/2)TiO3, (Bi1/2K1/2)TiO3 and BaTiO3 is within a range including a border line of a quadrangle ABCD with a point A, a point B, a point C and a point D as vertices in a ternary phase diagram. Vacancies are formed in an A-site of a perovskite structure by allowing the A-site elements to become deficient from stoichiometry. An amount of A-site vacancies becomes at least 2 mol % to at most 6 mol %.

摘要翻译： 提供具有由通式xBNT-yBKT-zBT（x + y + z = 1）表示的组成的压电/电致伸缩陶瓷，其中A位元素中的至少一种因化学计量而变得不足，其中a （Bi1 / 2Na1 / 2）TiO3，（Bi1 / 2K1 / 2）TiO3和BaTiO3的含量比x，y和z的点（x，y，z）在包括四边形ABCD的边界线 点A，点B，点C和点D作为三元相位图中的顶点。 通过使A位元素从化学计量学上变得缺陷，在钙钛矿结构的A位形成空位。 A位空位量变为至少2mol％至至多6mol％。

公开(公告)号：US08022604B2

公开(公告)日：2011-09-20

申请号：US12251523

申请日：2008-10-15

申请人： Shuichi Ozawa ,  Hirofumi Yamaguchi

发明人： Shuichi Ozawa ,  Hirofumi Yamaguchi

IPC分类号： H01L41/187

CPC分类号： C04B35/495 ,  C01G23/003 ,  C01P2002/34 ,  C01P2002/72 ,  C01P2006/11 ,  C01P2006/40 ,  C01P2006/80 ,  C04B2235/3201 ,  C04B2235/3203 ,  C04B2235/3251 ,  C04B2235/3255 ,  C04B2235/449 ,  C04B2235/656 ,  C04B2235/76 ,  C04B2235/765 ,  C04B2235/768 ,  C04B2235/77 ,  C04B2235/79 ,  C04B2235/80 ,  H01L41/083 ,  H01L41/0973 ,  H01L41/1873

摘要： The invention provides a (Li, Na, K)(Nb, Ta)O3 type piezoelectric/electrostrictive ceramic composition capable of being sintered at a low temperature and providing good electric field-induced strain at the time of high electric field application at a temperature for practical use. The piezoelectric/electrostrictive ceramic composition has an ABO3 type composition formula wherein lithium, sodium, and potassium are contained as first elements; niobium and tantalum are contained as second elements; oxygen (O) is contained as a third element; A/B ratio is higher than 1; and the ratio of the number of Ta atoms to the total number of atoms of the second elements is 10 mol % or more and 50 mol % or less, and comprises a perovskite type oxide wherein the first elements are A site composing elements and the second elements are B site composing elements.

摘要翻译： 本发明提供了一种能够在低温下烧结的（Li，Na，K）（Nb，Ta）O 3型压电/电致伸缩陶瓷组合物，并在高温下施加高电场时提供良好的电场应变 供实际使用。 压电/电致伸缩陶瓷组合物具有ABO 3型组成式，其中包含锂，钠和钾作为第一元素; 含有铌和钽作为第二元素; 含有氧（O）作为第三元素; A / B比高于1; 并且第二元素的Ta原子数与总原子数的比率为10摩尔％以上且50摩尔％以下，并且包含钙钛矿型氧化物，其中第一元素为A构成元素，第二元素为第二元素 元素是B网站组成元素。

公开(公告)号：US07901729B2

公开(公告)日：2011-03-08

申请号：US12047501

申请日：2008-03-13

申请人： Tsutomu Nanataki ,  Hirofumi Yamaguchi ,  Toshikatsu Kashiwaya ,  Yuya Kikuta

发明人： Tsutomu Nanataki ,  Hirofumi Yamaguchi ,  Toshikatsu Kashiwaya ,  Yuya Kikuta

IPC分类号： B05D5/12 ,  H01L41/22

CPC分类号： C04B35/493 ,  C01G23/003 ,  C01G25/006 ,  C01P2006/10 ,  C01P2006/40 ,  C04B35/62675 ,  C04B35/62805 ,  C04B2235/3206 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3267 ,  C04B2235/3279 ,  C04B2235/3287 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/5445 ,  C04B2235/656 ,  C04B2235/768 ,  C04B2235/77 ,  H01L41/0805 ,  H01L41/083 ,  H01L41/0973 ,  H01L41/1875 ,  H01L41/43 ,  Y10T29/42

摘要： There is disclosed a piezoelectric/electrostrictive porcelain composition capable of manufacturing, at a comparatively low sintering temperature, a piezoelectric/electrostrictive body which is dense and superior in crystallinity and which has satisfactory piezoelectric/electrostrictive characteristics so that deviation of the composition is not easily generated. The piezoelectric/electrostrictive porcelain composition contains as a major component a piezoelectric/electrostrictive porcelain composition component including a PbMg1/3Nb2/3O3—PbZrO3—PbTiO3 ternary solid solution system composition and NiO or including a Pb(Mg, Ni)1/3Nb2/3O3—PbZrO3—PbTiO3 ternary solid solution system composition, and further contains lead germanate.

摘要翻译： 公开了一种压电/电致伸缩瓷组合物，其能够在比较低的烧结温度下制造致密且结晶性优异并且具有令人满意的压电/电致伸缩特性的压电/电致伸缩体，因此不容易产生组成的偏差 。 压电/电致伸缩瓷组合物包含作为主要成分的包括PbMg1 / 3Nb2 / 3O3-PbZrO3-PbTiO3三元固溶体系组成的压电/电致伸缩瓷组合物组分和NiO或包含Pb（Mg，Ni）1 / 3Nb2 / 3O3 -PbZrO3-PbTiO3三元固溶体系组成，并含有锗酸铅。

公开(公告)号：US20090226294A1

公开(公告)日：2009-09-10

申请号：US12083015

申请日：2006-10-06

申请人： Koichi Sekido ,  Hirofumi Yamaguchi ,  Bae Junghwan

发明人： Koichi Sekido ,  Hirofumi Yamaguchi ,  Bae Junghwan

IPC分类号： H01L21/677 ,  B05C13/00 ,  C23C14/50

CPC分类号： H01L21/67196 ,  H01L21/67173 ,  H01L21/67184 ,  H01L21/67745

摘要： An operating method is disclosed for a processing system that comprises multiple process modules each adapted to perform substantially the same process upon a substrate. During process module conditioning as a preparatory step for executing a required process recipe, each time one process module completes conditioning, successive transfer of unprocessed substrates from a cassette to the process module is started on an associated substrate transfer route, and successive processes that use the process module are started for the unprocessed substrates. The processing system can be operated efficiently, even if the nonuniformity of the conditioning time required exists between process modules of the same specifications.

摘要翻译： 公开了一种用于处理系统的操作方法，该处理系统包括多个处理模块，每个处理模块适于在基板上执行基本相同的处理。 在处理模块调节期间，作为执行所需过程配方的准备步骤，每当一个处理模块完成调理时，在相关联的基板传送路线上开始将未处理的基板从盒子连续传送到处理模块，并且使用 为未处理的基板开始处理模块。 即使在相同规范的处理模块之间存在调节时间的不均匀性，也能够有效地操作处理系统。

公开(公告)号：US20090087542A1

公开(公告)日：2009-04-02

申请号：US12298570

申请日：2007-04-26

申请人： Yoshiaki Sasaki ,  Hirofumi Yamaguchi

发明人： Yoshiaki Sasaki ,  Hirofumi Yamaguchi

IPC分类号： C23C16/52

CPC分类号： H01L21/681 ,  C23C16/04 ,  C23C16/52 ,  H01L21/67259 ,  H01L21/67288

摘要： A substrate processing system includes a processing chamber 12, and an orienter 16 centering a wafer W. The orienter 16 is provided with an orienter sensor 42 measuring a central position discrepancy of the wafer W, and an image sensor 41 measuring a width of a non-film forming portion at circumferential portions of the wafer W. After a film deposition processing in the processing chamber 12, the wafer W is loaded into the orienter 16 where a central position discrepancy of the wafer W is measured, and the wafer W is then centered. Further, the width of the non-film forming portion of the wafer W is measured, and a film position discrepancy is calculated based on the width of the non-film forming portion. To correct the calculated film position discrepancy, a target transfer position of the wafer W on a mounting table 13 in the processing chamber 12 is adjusted.

摘要翻译： 基板处理系统包括处理室12和定向晶片W定向器16.定向器16设置有测量晶片W的中心位置偏差的定向传感器42和测量晶片W的宽度的图像传感器41， 在晶片W的圆周部分处形成膜。在处理室12中进行成膜处理之后，将晶片W装载到定向器16中，其中测量晶片W的中心位置差异，然后晶片W 居中 此外，测量晶片W的非成膜部分的宽度，并且基于非成膜部分的宽度计算膜位置差异。 为了校正计算出的胶片位置偏差，调整处理室12中的安装台13上的晶片W的目标转印位置。

公开(公告)号：US07221075B2

公开(公告)日：2007-05-22

申请号：US11281645

申请日：2005-11-17

申请人： Tsutomu Nanataki ,  Kunihiko Yoshioka ,  Hirofumi Yamaguchi

发明人： Tsutomu Nanataki ,  Kunihiko Yoshioka ,  Hirofumi Yamaguchi

IPC分类号： B41J2/45

CPC分类号： H01L41/098 ,  H01L41/187

摘要： A piezoelectric/electrostrictive device includes: a ceramic substrate having a thick portion and a thin diaphragm portion; and a piezoelectric/electrostrictive element having a layered structure including a lower electrode, a piezoelectric/electrostrictive film, and an upper electrode, and the thin diaphragm portion of the ceramic substrate is constituted to vibrate in conjunction with the driving of the piezoelectric/electrostrictive element. Furthermore, shape and dimension relations defined in the following (A) to (C) are satisfied: (A) a shape of the thin diaphragm portion 12 is an outward protruding arch shape, and an outward protrusion height of the arch shape is in a range of 5 to 50 μm; (B) a mounting width of the thin diaphragm portion is in a range of 600 to 2000 μm; and (C) a ratio (height/width) of the height to the width of the thick portion is in a range of 0.25 to 3. According to the piezoelectric/electrostrictive device, vibration of a thin diaphragm portion is effectively prevented from being damped, and the device maintains displacement (amplitude) to be high and is superior in response and highprecision (highresolution, high-sensitivity) detection is possible.

摘要翻译： 压电/电致伸缩器件包括：具有厚壁部分和薄膜部分的陶瓷基片; 以及具有包括下电极，压电/电致伸缩膜和上电极的层状结构的压电/电致伸缩元件，并且陶瓷基板的薄膜部分被构造成与压电/电致伸缩元件的驱动相结合而振动 。 此外，满足以下（A）〜（C）中定义的形状和尺寸关系：（A）薄膜部12的形状为向外突出的拱形，拱形的向外突出高度为 范围5至50 mum; （B）薄膜部分的安装宽度在600〜2000μm的范围内; 和（C）高度与厚部的宽度的比（高/宽）在0.25〜3的范围内。根据压电/电致伸缩装置，能够有效地防止薄膜部的振动被阻尼 ，并且器件将位移（振幅）保持为高并且响应高且精度高（高分辨率，高灵敏度）检测是可能的。

公开(公告)号：US20070066779A1

公开(公告)日：2007-03-22

申请号：US10579773

申请日：2004-11-18

申请人： Tsuneyuki Otaguro ,  Hiroshi Kinoshita ,  Kiyofumi Takano ,  Hirofumi Yamaguchi

发明人： Tsuneyuki Otaguro ,  Hiroshi Kinoshita ,  Kiyofumi Takano ,  Hirofumi Yamaguchi

IPC分类号： C08F214/18

CPC分类号： C09D133/16 ,  C08F20/22 ,  C08F20/28

摘要： A fluorine-containing photocurable composition containing a (meth)acrylate having a fluorinated alkyl group (A) and a photopolymerization initiator (B). The (meth)acrylate (A) includes a group represented by general formula (1) and two or more (meth)acryloyl groups, and a fluorine atom content in one molecule of the acrylate is 25% by weight or more, and molecular weight of the (meth)acrylate is 500 to 4000 (in the general formula (1), R represents a hydrogen atom or alkyl group having 1 to 4 carbon atoms; X represents an alkylene chain, which may have a hetero atom, or a connecting group represented by the following general formula (2); and Rf represents a fluorinated alkyl group) (in the formula (2), Y represents an oxygen atom or a sulfur atom, m and n are an integer of 1 to 4 which may be the same as or different from each other; and Rf1 is a fluorinated alkyl group).

摘要翻译： 含有具有氟化烷基（A）的（甲基）丙烯酸酯和光聚合引发剂（B）的含氟光固化性组合物。 （甲基）丙烯酸酯（A）包括由通式（1）表示的基团和两个以上（甲基）丙烯酰基，一分子中丙烯酸酯的氟原子含量为25重量％以上，分子量 的（甲基）丙烯酸酯为500〜4000（在通式（1）中，R表示氢原子或碳原子数1〜4的烷基，X表示可具有杂原子的亚烷基链， （2）表示的基团，Rf表示氟代烷基）（式（2）中，Y表示氧原子或硫原子，m表示1〜4的整数，可以是 相同或不同; Rf 1是氟化烷基）。

公开(公告)号：US20060290255A1

公开(公告)日：2006-12-28

申请号：US11471938

申请日：2006-06-21

申请人： Hirofumi Yamaguchi ,  Kei Sato

发明人： Hirofumi Yamaguchi ,  Kei Sato

IPC分类号： H01J9/02

CPC分类号： H01J1/32 ,  H01J1/312 ,  H01J2201/3125

摘要： A dielectric-film-type electron emitter includes an emitter section, a first electrode, and a second electrode. The emitter section is formed of a thin layer of a polycrystalline dielectric material. The dielectric material constituting the emitter section is formed of a material having high mechanical quality factor (Qm). Specifically, the dielectric material has a Qm higher than that of a so-called low-Qm material (a material having a Qm of 100 or less). The Qm of the dielectric material is preferably 300 or more, more preferably 500 or more.

摘要翻译： 电介质膜型电子发射器包括发射极部分，第一电极和第二电极。 发射极部分由多晶电介质材料的薄层形成。 构成发射极部的介电材料由具有高机械品质因数（Qm）的材料形成。 具体地说，介电材料的Qm高于所谓的低Qm材料（Qm为100以下的材料）。 电介质材料的Qm优选为300以上，更优选为500以上。