公开(公告)号：US5622633A

公开(公告)日：1997-04-22

申请号：US516414

申请日：1995-08-17

申请人： Yoshinori Ohtsuka ,  Yukihiro Takeuchi ,  Tadashi Hattori

发明人： Yoshinori Ohtsuka ,  Yukihiro Takeuchi ,  Tadashi Hattori

IPC分类号： G01P15/08 ,  G01P15/12 ,  H01L21/00 ,  B44C1/22

CPC分类号： G01P15/0802 ,  G01P15/124 ,  G01P2015/0814

摘要： An MISFET type semiconductor sensor, which can avoid deterioration of characteristics, and a method for fabricating same are disclosed. Silicon oxide films and a silicon nitride film are formed on an upper surface of a p-type silicon substrate, and a movable portion is disposed above the silicon nitride film with a predetermined interval interposed therebetween. A movable gate electrode portion exists on a portion of the movable portion and is displaced by acceleration. Fixed electrodes (a source/drain portion) composed of an impurity diffusion layer are formed on the p-type silicon substrate, and a flowing current changes due to a change in a relative position with the movable gate electrode portion due to acceleration. Projections for movable-range restriction use are provided on a lower surface of the movable portion other than the movable gate electrode portion, and form a gap which is narrower than a gap between the p-type silicon substrate and movable gate electrode portion.

摘要翻译： 公开了一种能够避免特性恶化的MISFET型半导体传感器及其制造方法。 氧化硅膜和氮化硅膜形成在p型硅衬底的上表面上，并且可移动部分以其间插入预定间隔设置在氮化硅膜的上方。 可动栅电极部分存在于可动部分的一部分上并被加速度位移。 在p型硅衬底上形成由杂质扩散层构成的固定电极（源极/漏极部分），并且由于加速而与可动栅电极部分的相对位置的变化导致流动电流变化。 可移动范围限制使用的投影设置在可移动部分以外的可移动栅电极部分的下表面上，并且形成比p型硅基板和可动栅电极部分之间的间隙窄的间隙。

公开(公告)号：US5528200A

公开(公告)日：1996-06-18

申请号：US392246

申请日：1995-02-22

申请人： Shigenori Yamauchi ,  Takamoto Watanabe ,  Yoshinori Ohtsuka

发明人： Shigenori Yamauchi ,  Takamoto Watanabe ,  Yoshinori Ohtsuka

IPC分类号： G01R25/08 ,  H03K3/03 ,  H03K5/13 ,  H03B5/00

CPC分类号： H03K3/0315 ,  G01R25/08 ,  H03K5/131 ,  Y10S331/03

摘要： A ring oscillator for circulating pulse edges of two types therein includes an even number of inverting circuits connected in a ring. Each of the inverting circuits is operative to invert an input signal and output an inversion of the input signal. One of the inverting circuits is a first start inverting circuit which starts an operation of inverting an input signal in response to a first control signal applied from an external input. One of the inverting circuits except the first start inverting circuit and an inverting circuit immediately following the first start inverting circuit is a second start inverting circuit which starts an operation of inverting an input signal in response to a second control signal. A control signal inputting arrangement serves to input the second control signal to the second start inverting circuit during an interval from a first moment at which the first control signal is input into the first start inverting circuit and the first start inverting circuit starts the inverting operation to a second moment at which a pulse edge initially generated by the start of the inverting operation of the first start inverting circuit and travelling while being sequentially inverted by the inverting circuits enters the second start inverting circuit.

摘要翻译： 用于循环两种类型的脉冲边缘的环形振荡器包括以环形连接的偶数反相电路。 每个反相电路用于反转输入信号并输出​​输入信号的反相。 反相电路中的一个是第一启动反相电路，其响应于从外部输入施加的第一控制信号开始反相输入信号的操作。 除了第一启动反相电路和紧接在第一启动反相电路之后的反相电路之一的反相电路中的一个是响应于第二控制信号开始反相输入信号的操作的第二启动反相电路。 控制信号输入装置用于在从第一控制信号输入到第一启动反相电路的第一时刻起的间隔期间将第二控制信号输入到第二启动反相电路，并且第一启动反相电路开始反相操作 第二时刻，由第一起动反转电路的反相操作开始初始产生的脉冲沿并且由反相电路顺序反转的第二时刻进入第二启动反相电路。

公开(公告)号：US5359287A

公开(公告)日：1994-10-25

申请号：US89610

申请日：1993-07-12

申请人： Takamoto Watanabe ,  Yoshinori Ohtsuka ,  Kouichi Hoshino ,  Katsumi Nakamura

发明人： Takamoto Watanabe ,  Yoshinori Ohtsuka ,  Kouichi Hoshino ,  Katsumi Nakamura

IPC分类号： G01D5/14 ,  G01D5/16 ,  G01R33/09 ,  G01P3/488 ,  G01B7/30 ,  G01R33/06

CPC分类号： G01D5/147 ,  G01R33/09

摘要： A magnetic detecting circuit has a magneto resistance element which converts a change of magnetism detected into a signal. A plurality of these magneto resistive elements are provided on a plane, and are oriented on the plane in two opposite directions having angles, relative to a bias direction, having substantially equal absolute values. The placement in opposite directions allows the resistance values from the elements to change in approximately the same direction as the object moves, to allow a monotonic change in the bias magnetic field. The change of the bias magnetic field can be detected from the change of resistance values of the magneto resistive elements.

摘要翻译： 磁检测电路具有将检测到的磁性变化转换为信号的磁阻元件。 多个这样的磁阻元件设置在平面上，并且在两个相反的方向上在平面上取向，该角度相对于偏置方向具有基本相等的绝对值。 沿相反方向的放置允许来自元件的电阻值与物体移动大致相同的方向改变，以允许偏置磁场中的单调变化。 可以从磁阻元件的电阻值的变化来检测偏置磁场的变化。

公开(公告)号：US5181417A

公开(公告)日：1993-01-26

申请号：US807629

申请日：1991-12-13

申请人： Minoru Nishida ,  Naohito Mizuno ,  Yoshinori Ohtsuka ,  Tadashi Ozaki ,  Hiroshi Uesugi

发明人： Minoru Nishida ,  Naohito Mizuno ,  Yoshinori Ohtsuka ,  Tadashi Ozaki ,  Hiroshi Uesugi

IPC分类号： G01L9/00

CPC分类号： G01L19/0084 ,  G01L19/0038 ,  G01L9/0042 ,  G01L9/0055

摘要： A device for detecting pressure of a high temperature pressurized fluid. A sensing element having a diaphragm adjacent to one end and a lead wire outlet adjacent to another end in the longitudinal direction of a rectangular parallelopiped configuration of the sensing element including the diaphragm. Thus, the lead wire outlet is a predetermined distance from the diaphragm heated by high temperature fluid. This prevents the lead wire outlet and the other electrical assemblies from suffering deterioration or misoperation caused by high temperature. The reliability of the pressure detecting device can be improved.

摘要翻译： 一种用于检测高温加压流体的压力的装置。 感测元件具有邻近一端的隔膜和与包括隔膜的感测元件的矩形平行六面体构造的纵向方向上的另一端相邻的引线出口。 因此，引线出口与由高温流体加热的隔膜预定距离。 这样可防止导线出口和其他电气组件因高温引起的退化或误操作。 可以提高压力检测装置的可靠性。

公开(公告)号：US07949265B2

公开(公告)日：2011-05-24

申请号：US12184276

申请日：2008-08-01

申请人： Hirofumi Sakita ,  Takeshi Murata ,  Yoshinori Ohtsuka ,  Masaaki Ohtsuki

发明人： Hirofumi Sakita ,  Takeshi Murata ,  Yoshinori Ohtsuka ,  Masaaki Ohtsuki

IPC分类号： G03G15/08

CPC分类号： G03G15/0877 ,  G03G15/0856 ,  G03G15/086 ,  G03G15/0862 ,  G03G15/0868

摘要： A toner supply device for supplying toner to a developing device includes: a first toner supply portion for supplying toner to a developing hopper; a second toner supply portion for supplying the stored toner to the first toner supply portion; a first toner supply driver for driving the first toner supply portion; a first residual toner quantity detector for detecting the residual toner quantity in the first toner supply portion; a second toner supply driver for driving the second toner supply portion; a second residual toner quantity detector for detecting the residual toner quantity in the second toner supply portion; and a controller for controlling the drives of the first and second toner supply drivers by switching on and off the drives of the first and second toner supply drivers in accordance with the residual toner quantities detected by the first and second residual toner quantity detectors.

摘要翻译： 用于向显影装置供应调色剂的调色剂供应装置包括：用于向显影漏斗供应调色剂的第一调色剂供应部分; 第二调色剂供应部分，用于将存储的调色剂供应到第一调色剂供应部分; 用于驱动第一调色剂供应部分的第一调色剂供应驱动器; 第一残留调色剂量检测器，用于检测第一调色剂供应部分中的残留调色剂量; 用于驱动第二调色剂供应部分的第二调色剂供应驱动器; 第二残余调色剂量检测器，用于检测第二调色剂供应部分中的残留调色剂量; 以及控制器，用于根据由第一和第二残余调色剂量检测器检测到的残留调色剂量，通过接通和关闭第一和第二调色剂供应驱动器的驱动来控制第一和第二调色剂供应驱动器的驱动。

公开(公告)号：US07167341B2

公开(公告)日：2007-01-23

申请号：US10619859

申请日：2003-07-15

申请人： Minoru Hasegawa ,  Yoshinori Ohtsuka

发明人： Minoru Hasegawa ,  Yoshinori Ohtsuka

IPC分类号： G11B5/147

CPC分类号： G11B5/3103 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3163

摘要： A depression is formed on the surface of a lower magnetic pole layer in a thin film magnetic head. A lower auxiliary magnetic pole is defined in the lower magnetic pole layer between the depression and a medium-opposed surface of a head slider. The depression is filled up with a non-magnetic material. When the thin film magnetic head is to be formed, no magnetic layer is formed on the lower magnetic pole layer for forming the lower auxiliary magnetic pole. A dry process such as sputtering and vapor-deposition can be employed to form the lower magnetic pole layer, so that a wider choice can be provided for the material of the lower magnetic pole layer and the lower auxiliary magnetic pole.

摘要翻译： 在薄膜磁头中的下磁​​极层的表面上形成凹陷。 在下部磁极层中限定下部辅助磁极，该下部磁极层位于凹部与磁头滑块的中等相对表面之间。 凹陷填充有非磁性材料。 当要形成薄膜磁头时，在用于形成下辅助磁极的下磁极层上不形成磁性层。 可以采用诸如溅射和气相沉积之类的干法来形成下磁极层，从而可以为下磁极层和下辅助磁极的材料提供更宽的选择。

公开(公告)号：US20050013045A1

公开(公告)日：2005-01-20

申请号：US10619859

申请日：2003-07-15

申请人： Minoru Hasegawa ,  Yoshinori Ohtsuka

发明人： Minoru Hasegawa ,  Yoshinori Ohtsuka

IPC分类号： G11B5/31 ,  G11B5/147

CPC分类号： G11B5/3103 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3163

摘要： A depression is formed on the surface of a lower magnetic pole layer in a thin film magnetic head. A lower auxiliary magnetic pole is defined in the lower magnetic pole layer between the depression and a medium-opposed surface of a head slider. The depression is filled up with a non-magnetic material. When the thin film magnetic head is to be formed, no magnetic layer is formed on the lower magnetic pole layer for forming the lower auxiliary magnetic pole. A dry process such as sputtering and vapor-deposition can be employed to form the lower magnetic pole layer, so that a wider choice can be provided for the material of the lower magnetic pole layer and the lower auxiliary magnetic pole.

摘要翻译： 在薄膜磁头中的下磁​​极层的表面上形成凹陷。 在下部磁极层中限定下部辅助磁极，该下部磁极层位于凹部与磁头滑块的中等相对表面之间。 凹陷填充有非磁性材料。 当要形成薄膜磁头时，在用于形成下辅助磁极的下磁极层上不形成磁性层。 可以采用诸如溅射和气相沉积之类的干法来形成下磁极层，从而可以为下磁极层和下辅助磁极的材料提供更宽的选择。

公开(公告)号：US06828046B2

公开(公告)日：2004-12-07

申请号：US09960419

申请日：2001-09-21

申请人： Shoji Ikeda ,  Ikuya Tagawa ,  Yuji Uehara ,  Yoshinori Ohtsuka

发明人： Shoji Ikeda ,  Ikuya Tagawa ,  Yuji Uehara ,  Yoshinori Ohtsuka

IPC分类号： G11B533

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3109 ,  G11B5/3153 ,  G11B5/3163 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/132 ,  Y10T428/115 ,  Y10T428/1171 ,  Y10T428/12465 ,  Y10T428/12861 ,  Y10T428/12951

摘要： A soft magnetic film comprising Fe, Co, a metallic element (M), and oxygen (O) is provided. The soft magnetic film is represented by a composition formula of (Fe1-aCoa)xMyOz. The metallic element (M) is one selected from a group consisting of Al, B, Ga, Si, Ge, Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Rh, Ru, Ni, Pd and Pt, or is an alloy composed of at least two selected from this group. The composition formula fulfills the following conditions: a=0.05-0.65; y=0.2-9 at %, z=1-12 at %, and y+z=

摘要翻译： 提供了包含Fe，Co，金属元素（M）和氧（O）的软磁性膜。 软磁性膜由（Fe1-aCoa）xMyOz的组成式表示。 金属元素（M）是选自Al，B，Ga，Si，Ge，Y，Ti，Zr，Hf，V，Nb，Ta，Cr，Mo，W，Rh，Ru，Ni， Pd和Pt，或由选自该组的至少两种组成的合金。 组成式满足以下条件：a = 0.05-0.65; y = 0.2-9at％，z = 1-12at％，y + z = <15at％; x =（100-y-z）at％。 以bcc相为主相，形成晶体结构。 bcc相的晶粒直径不超过50nm。 bcc相包括金属元素（M）和氧（O）的固溶体。

公开(公告)号：US5922212A

公开(公告)日：1999-07-13

申请号：US663001

申请日：1996-06-07

申请人： Kazuhiko Kano ,  Kenichi Nara ,  Toshimasa Yamamoto ,  Nobuyuki Kato ,  Yoshitaka Gotoh ,  Yoshinori Ohtsuka ,  Kenichi Ao

发明人： Kazuhiko Kano ,  Kenichi Nara ,  Toshimasa Yamamoto ,  Nobuyuki Kato ,  Yoshitaka Gotoh ,  Yoshinori Ohtsuka ,  Kenichi Ao

IPC分类号： B81B3/00 ,  B81C1/00 ,  G01P15/08 ,  G01P15/125 ,  C23F1/00

CPC分类号： G01P15/125 ,  B81B3/0072 ,  B81C1/00666 ,  G01P15/0802 ,  B81C2201/0164 ,  B81C2201/0167 ,  B81C2201/017 ,  G01P2015/0814

摘要： A semiconductor sensor having a thin-film structure body, in which thin-film structure is prevented from bending due to the internal stress distribution in the thickness direction, is disclosed. A silicon-oxide film is formed as a sacrificial layer on a silicon substrate, and a polycrystalline-silicon thin film is formed on the silicon-oxide film. Thereafter, phosphorus (P) is ion-implanted in the surface of the polycrystalline-silicon thin film, and thereby the surface state of the polycrystalline-silicon thin film is modified. A portion of distribution of stress existing in the thickness direction of the polycrystalline-silicon thin film is changed by this modification, and stress distribution is adjusted. By removal of the silicon-oxide film, a movable member of the polycrystalline-silicon thin film is disposed above the silicon substrate with a gap interposed therebetween.

摘要翻译： 公开了一种具有薄膜结构体的半导体传感器，其薄膜结构被防止由于厚度方向上的内部应力分布而弯曲。 在硅衬底上形成氧化硅膜作牺牲层，在氧化硅膜上形成多晶硅薄膜。 此后，将磷（P）离子注入多晶硅薄膜的表面，从而改变多晶硅薄膜的表面状态。 通过该变形例改变在多晶硅薄膜的厚度方向上存在的应力分布的一部分，并且调整应力分布。 通过去除氧化硅膜，多晶硅薄膜的可移动部件设置在硅衬底之上，其间插入间隙。

公开(公告)号：US5864064A

公开(公告)日：1999-01-26

申请号：US717405

申请日：1996-09-20

申请人： Kazuhiko Kano ,  Yoshinori Ohtsuka ,  Norio Kitao ,  Kenichi Ao ,  Yasutoshi Suzuki

发明人： Kazuhiko Kano ,  Yoshinori Ohtsuka ,  Norio Kitao ,  Kenichi Ao ,  Yasutoshi Suzuki

IPC分类号： G01P15/00 ,  G01H1/00 ,  G01P15/02 ,  G01P15/08 ,  G01P15/125 ,  G01P15/135 ,  G01P15/18

CPC分类号： G01P15/125 ,  G01P15/0802 ,  G01P15/135 ,  G01P15/18

摘要： An acceleration sensor is constructed by a substrate, a cylindrical dead-weight movable electrode to be displaced by acceleration, a fixed electrode from the inside of which a cylinder is hollowed, a cylindrical anchor arranged on the substrate for supporting the dead-weight movable electrode with elastic transformable structural material and beams. When acceleration is applied from the outside, the cylindrical detecting face of the dead-weight movable electrode and the cylindrical detected face of the fixed electrode are in contact on a two-dimensional plane parallel to the substrate and the acceleration sensor detects the contact. A radial interval between the detecting face of the dead-weight movable electrode and the detected face of the fixed electrode is set in view of the elastic modulus of the beams so that external force can be detected isotropically and the acceleration sensor detects acceleration on a two-dimensional plane nondirectionally.

摘要翻译： 一个加速度传感器是由一个基板，一个被加速移位的一个圆柱形的自重的可移动电极构成的，一个固定的电极从一个圆柱体中空的一个固定的电极，一个设置在基板上的圆柱形的锚固件，用于支撑自重的可动电极 具有弹性可变形结构材料和梁。 当从外部施加加速度时，固定电极的圆柱形检测面和固定电极的圆柱形检测面在与基板平行的二维平面上接触，并且加速度传感器检测接触。 考虑到光束的弹性模量，设定了自重移动电极的检测面与固定电极的检测面之间的径向间隔，从而可以各向异性地检测外力，并且加速度传感器检测到二次加速度 非定向平面。