公开(公告)号：US06828046B2

公开(公告)日：2004-12-07

申请号：US09960419

申请日：2001-09-21

申请人： Shoji Ikeda ,  Ikuya Tagawa ,  Yuji Uehara ,  Yoshinori Ohtsuka

发明人： Shoji Ikeda ,  Ikuya Tagawa ,  Yuji Uehara ,  Yoshinori Ohtsuka

IPC分类号： G11B533

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3109 ,  G11B5/3153 ,  G11B5/3163 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/132 ,  Y10T428/115 ,  Y10T428/1171 ,  Y10T428/12465 ,  Y10T428/12861 ,  Y10T428/12951

摘要： A soft magnetic film comprising Fe, Co, a metallic element (M), and oxygen (O) is provided. The soft magnetic film is represented by a composition formula of (Fe1-aCoa)xMyOz. The metallic element (M) is one selected from a group consisting of Al, B, Ga, Si, Ge, Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Rh, Ru, Ni, Pd and Pt, or is an alloy composed of at least two selected from this group. The composition formula fulfills the following conditions: a=0.05-0.65; y=0.2-9 at %, z=1-12 at %, and y+z=

摘要翻译： 提供了包含Fe，Co，金属元素（M）和氧（O）的软磁性膜。 软磁性膜由（Fe1-aCoa）xMyOz的组成式表示。 金属元素（M）是选自Al，B，Ga，Si，Ge，Y，Ti，Zr，Hf，V，Nb，Ta，Cr，Mo，W，Rh，Ru，Ni， Pd和Pt，或由选自该组的至少两种组成的合金。 组成式满足以下条件：a = 0.05-0.65; y = 0.2-9at％，z = 1-12at％，y + z = <15at％; x =（100-y-z）at％。 以bcc相为主相，形成晶体结构。 bcc相的晶粒直径不超过50nm。 bcc相包括金属元素（M）和氧（O）的固溶体。

公开(公告)号：US06822831B2

公开(公告)日：2004-11-23

申请号：US10074185

申请日：2002-02-12

申请人： Shoji Ikeda ,  Yuji Uehara ,  Ikuya Tagawa ,  Naoki Takeguchi ,  Masahiro Kakehi

发明人： Shoji Ikeda ,  Yuji Uehara ,  Ikuya Tagawa ,  Naoki Takeguchi ,  Masahiro Kakehi

IPC分类号： G11B5147

CPC分类号： H01F10/147 ,  G11B5/3109 ,  H01F10/131 ,  H01F10/138 ,  H01F10/265 ,  Y10S428/90

摘要： An object of the present invention is to provide a recording head having a magnetic pole simultaneously possessing a high saturation magnetic flux density, a high permeability and a high electric resistivity, and the magnetic pole of the recording head is a polycrystalline film comprising Fe whose content is not less than 57.5 atomic % and not more than 94.5 atomic %; one or more kinds of elements selected from the element group of Al, B, Ga, Si, Ge, Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W and Rh, whose whole content is not less than 1 atomic % and not more than 15 atomic %; N whose content is not less than 0.5 atomic % and not more than 10 atomic %; and O whose content is not less than 1.5 atomic % and not more than 22.5 atomic %.

摘要翻译： 本发明的目的是提供一种具有同时具有高饱和磁通密度，高磁导率和高电阻率的磁极的记录头，记录头的磁极是包含Fe的多晶膜，其含量 不小于57.5原子％且不大于94.5原子％; 选自Al，B，Ga，Si，Ge，Y，Ti，Zr，Hf，V，Nb，Ta，Cr，Mo，W和Rh的元素组中的一种或多种元素，其全部含量不少于 1原子％以上15原子％以下。 N含量不小于0.5原子％且不大于10原子％; 其含量不小于1.5原子％且不大于22.5原子％。

公开(公告)号：US06970324B2

公开(公告)日：2005-11-29

申请号：US10299177

申请日：2002-11-19

申请人： Shoji Ikeda ,  Takayuki Kubomiya ,  Ikuya Tagawa ,  Yuji Uehara

发明人： Shoji Ikeda ,  Takayuki Kubomiya ,  Ikuya Tagawa ,  Yuji Uehara

IPC分类号： G11B5/31 ,  G11B5/39 ,  H01F10/16 ,  H01F10/26

CPC分类号： H01F10/26 ,  G11B5/3109 ,  G11B5/313 ,  G11B5/3967 ,  H01F10/16

摘要： A soft magnetic film includes a ferromagnetic layer. The ferromagnetic layer is laid over a non-magnetic substructure including ferromagnetic atoms. The uniaxial magnetic anisotropy may be established in the ferromagnetic layer. Since a magnetic property is not required in the substructure under the ferromagnetic layer, the soft magnetic film of this type may be utilized for purposes of wider variations.

摘要翻译： 软磁性膜包括铁磁层。 铁磁层铺设在包括铁磁原子的非磁性子结构之上。 可以在铁磁层中建立单轴磁各向异性。 由于在铁磁层下的亚结构中不需要磁性，所以这种类型的软磁膜可以用于较宽的变化。

公开(公告)号：US20050175864A1

公开(公告)日：2005-08-11

申请号：US11071309

申请日：2005-03-04

申请人： Shoji Ikeda ,  Takayuki Kubomiya ,  Masaaki Matsuoka ,  Ikuya Tagawa ,  Junichi Kane ,  Akifumi Chikazawa ,  Kazumasa Hosono

发明人： Shoji Ikeda ,  Takayuki Kubomiya ,  Masaaki Matsuoka ,  Ikuya Tagawa ,  Junichi Kane ,  Akifumi Chikazawa ,  Kazumasa Hosono

IPC分类号： G11B5/31 ,  G11B5/147

CPC分类号： G11B5/3109 ,  G11B5/3103 ,  G11B5/3163

摘要： The present invention relates to a magnetic thin film, which has high saturation magnetic flux density Bs of 2.2T or more, which is formed into a flat surface having surface roughness of 5 nm or less and which is capable of preferably being used for a write-head, and a magnetic head. The magnetic thin film includes a FeCo-based alloy layer stacked with a different layer so as to obtain the surface roughness of 5 nm or less. When forming the FeCo-based alloy layer, it is possible to flatten the film surface by performing reactive spattering using a reaction gas such as N2 for each of the layers forming the multi-layered thin film.

摘要翻译： 本发明涉及具有2.2T以上的高饱和磁通密度Bs的磁性薄膜，其形成为具有5nm以下的表面粗糙度的平坦面，并且能够优选用于写入 头和磁头。 磁性薄膜包括层叠有不同层的FeCo系合金层，以获得5nm以下的表面粗糙度。 当形成FeCo基合金层时，可以通过对形成多层薄膜的各层使用诸如N 2的反应气体进行反应性溅射来使膜表面变平。

公开(公告)号：US09799822B2

公开(公告)日：2017-10-24

申请号：US14118093

申请日：2012-04-19

申请人： Shunsuke Fukami ,  Nobuyuki Ishiwata ,  Tadahiko Sugibayashi ,  Hideo Ohno ,  Shoji Ikeda ,  Michihiko Yamanouchi

发明人： Shunsuke Fukami ,  Nobuyuki Ishiwata ,  Tadahiko Sugibayashi ,  Hideo Ohno ,  Shoji Ikeda ,  Michihiko Yamanouchi

IPC分类号： H01L29/82 ,  H01L43/02 ,  H01L27/22 ,  G11C11/16 ,  H01L43/08

CPC分类号： H01L43/02 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08

摘要： A disclosed magnetic memory element includes: a magnetization free layer formed of a ferromagnetic substance having perpendicular magnetic anisotropy; a response layer provided so as to be opposed to the magnetization free layer and formed of a ferromagnetic substance having perpendicular magnetic anisotropy; a non-magnetic layer provided so as to be opposed to the response layer on a side opposite to the magnetization free layer and formed of a non-magnetic substance; and a reference layer provided so as to be opposed to the non-magnetic layer on a side opposite to the response layer and formed of a ferromagnetic substance having perpendicular magnetic anisotropy. The magnetization free layer includes a first magnetization fixed region and a second magnetization fixed region which have magnetization fixed in directions antiparallel to each other, and a magnetization free region in which a magnetization direction is variable.

公开(公告)号：US20140340961A1

公开(公告)日：2014-11-20

申请号：US14356739

申请日：2011-11-08

申请人： Hideo Ohno ,  Shoji Ikeda ,  Hiroyuki Yamamoto ,  Yosuke Kurosaki ,  Katsuya Miura

发明人： Hideo Ohno ,  Shoji Ikeda ,  Hiroyuki Yamamoto ,  Yosuke Kurosaki ,  Katsuya Miura

IPC分类号： G11C11/16 ,  H01L43/10 ,  H01L27/22

CPC分类号： G11C11/161 ,  G11C11/1659 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： Provided is a tunnel magnetoresistive effect element such that a high TMR ratio and a low write current can be realized, and the thermal stability factor (E/kBT) of a recording layer and a pinned layer is increased while an increase in resistance of the element as a whole is suppressed, thus enabling a stable operation. On at least one of a recording layer 21 and a pinned layer 22 each comprising CoFeB, electrically conductive oxide layers 31 and 32 are disposed on a side opposite to a tunnel barrier layer 10.

摘要翻译： 提供了可以实现高TMR比和低写入电流的隧道磁阻效应元件，并且记录层和钉扎层的热稳定性因子（E / kBT）增加，同时元件的电阻增加 整体上被抑制，能够进行稳定的动作。 在每个包含CoFeB的记录层21和被钉扎层22中的至少一个上，导电氧化物层31和32设置在与隧道势垒层10相对的一侧。

公开(公告)号：US07759750B2

公开(公告)日：2010-07-20

申请号：US11790211

申请日：2007-04-24

申请人： Jun Hayakawa ,  Hideo Ohno ,  Shoji Ikeda

发明人： Jun Hayakawa ,  Hideo Ohno ,  Shoji Ikeda

IPC分类号： H01L29/82 ,  G11C11/02

CPC分类号： H01F10/3254 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/3268 ,  H01F10/329 ,  Y10T428/1121

摘要： To provide a highly-reliable, low-power-consumption nonvolatile memory. A magnetization reversal of a ferromagnetic free layer is accomplished with a spin transfer torque in a state where an appropriate magnetic field is applied in a direction orthogonal to the direction of the magnetic easy axis of the ferromagnetic free layer of the tunnel magnetoresistance device that the magnetic memory cell includes. Preferably, the magnetic field is applied in a direction forming an angle of 45° with the direction perpendicular to the film plane.

摘要翻译： 提供高可靠性，低功耗的非易失性存储器。 铁磁自由层的磁化反转在自旋转移转矩下完成，其中在与隧道磁阻器件的铁磁性自由层的易磁化轴的方向正交的方向上施加适当的磁场， 存储单元包括。 优选地，在垂直于膜平面的方向上，沿形成45°角的方向施加磁场。

公开(公告)号：US20070254188A1

公开(公告)日：2007-11-01

申请号：US11790211

申请日：2007-04-24

申请人： Jun Hayakawa ,  Hideo Ohno ,  Shoji Ikeda

发明人： Jun Hayakawa ,  Hideo Ohno ,  Shoji Ikeda

IPC分类号： G11B5/39

CPC分类号： H01F10/3254 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/3268 ,  H01F10/329 ,  Y10T428/1121

摘要： To provide a highly-reliable, low-power-consumption nonvolatile memory. A magnetization reversal of a ferromagnetic free layer is accomplished with a spin transfer torque in a state where an appropriate magnetic field is applied in a direction orthogonal to the direction of the magnetic easy axis of the ferromagnetic free layer of the tunnel magnetoresistance device that the magnetic memory cell includes. Preferably, the magnetic field is applied in a direction forming an angle of 45° with the direction perpendicular to the film plane.

摘要翻译： 提供高可靠性，低功耗的非易失性存储器。 铁磁自由层的磁化反转在自旋转移转矩下完成，其中在与隧道磁阻器件的铁磁性自由层的易磁化轴的方向正交的方向上施加适当的磁场， 存储单元包括。 优选地，在垂直于膜平面的方向上，沿形成45°角的方向施加磁场。

公开(公告)号：US4455310A

公开(公告)日：1984-06-19

申请号：US382353

申请日：1982-05-26

申请人： Fumio Sakamoto ,  Shoji Ikeda ,  Goro Tsukamoto

发明人： Fumio Sakamoto ,  Shoji Ikeda ,  Goro Tsukamoto

IPC分类号： C07D405/12 ,  A61K31/495 ,  A61P31/04 ,  C07D317/40 ,  C07D403/14

CPC分类号： C07D317/40

摘要： A novel quinolinecarboxylic acid derivative of the formula ##STR1## or a pharmaceutically acceptable salt thereof. These compounds are useful as antibacterial agents, and are prepared by a process which comprises reacting a compound of the formula ##STR2## with a compound of the formula ##STR3##wherein X represents a halogen atom, and thereafter, as required, converting the resulting compound to a pharmaceutically acceptable salt thereof.

摘要翻译： 式（I）的新型喹啉羧酸衍生物或其药学上可接受的盐。 这些化合物可用作抗菌剂，并且通过包括使下式化合物（II）与下式化合物（III）反应的方法制备，其中X表示卤素原子，其后， 根据需要将所得化合物转化为其药学上可接受的盐。

公开(公告)号：US09135973B2

公开(公告)日：2015-09-15

申请号：US13701257

申请日：2011-05-26

申请人： Hideo Ohno ,  Shoji Ikeda ,  Fumihiro Matsukura ,  Masaki Endoh ,  Shun Kanai ,  Katsuya Miura ,  Hiroyuki Yamamoto

发明人： Hideo Ohno ,  Shoji Ikeda ,  Fumihiro Matsukura ,  Masaki Endoh ,  Shun Kanai ,  Katsuya Miura ,  Hiroyuki Yamamoto

IPC分类号： G11C11/16 ,  H01L43/08 ,  H01L43/02 ,  G11C11/14 ,  H01L27/22

CPC分类号： G11C11/16 ,  G11C11/14 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

摘要： Provided are a magnetoresistance effect element with a stable magnetization direction perpendicular to film plane and a controlled magnetoresistance ratio, in which writing can be performed by magnetic domain wall motion, and a magnetic memory including the magnetoresistance effect element. The magnetoresistance ratio is controlled by forming a ferromagnetic layer of the magnetoresistance effect element from a ferromagnetic material including at least one type of 3d transition metal or a Heusler alloy. The magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane by controlling the film thickness of the ferromagnetic layer on an atomic layer level.

摘要翻译： 提供了具有与膜平面垂直的稳定磁化方向的磁阻效应元件和可以通过磁畴壁运动进行写入的受控磁阻比，以及包括磁阻效应元件的磁存储器。 通过从包括至少一种类型的3d过渡金属或Heusler合金的铁磁材料形成磁阻效应元件的铁磁层来控制磁阻比。 通过在原子层上控制铁磁层的膜厚度，将磁化方向从膜平面的方向转变为垂直于膜平面的方向。