公开(公告)号：US5534491A

公开(公告)日：1996-07-09

申请号：US381278

申请日：1995-01-31

申请人： Takao Nakamura ,  Michitomo Iiyama

发明人： Takao Nakamura ,  Michitomo Iiyama

IPC分类号： H01L39/24

CPC分类号： H01L39/247 ,  Y10S505/742

摘要： A process for producing a layered structure containing at least one thin film of oxide superconductor (1) such as Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x having a contaminated surface on a substrate (3). The contaminated surface of the thin film of oxide superconductor is heat-treated in an atmosphere containing oxygen of high purity of higher than 5N and a partial pressure of 25 Torr at a temperature of 350.degree. to 700.degree. C. On the thin film of oxide superconductor (1), another thin film (2) of oxide superconductor or non-superconductor is deposited.The resulting structure of layered thin films is used for fabricating superconducting transistor, Josephson junctions, superconducting circuits or the like.

摘要翻译： 一种在基板（3）上形成具有污染表面的至少一层氧化物超导体（1）如Y1Ba2Cu3O7-x的层状结构的制造方法。 氧化物超导体薄膜的被污染表面在350℃〜700℃的温度下，在高纯度高于5N的氧气和25托的分压气氛中进行热处理。在氧化物薄膜 超导体（1），沉积氧化物超导体或非超导体的另一薄膜（2）。 所得到的层状薄膜结构用于制造超导晶体管，约瑟夫森结，超导电路等。

公开(公告)号：US5514877A

公开(公告)日：1996-05-07

申请号：US183894

申请日：1994-01-21

申请人： Takao Nakamura ,  Hiroshi Inada ,  Michitomo Iiyama

发明人： Takao Nakamura ,  Hiroshi Inada ,  Michitomo Iiyama

IPC分类号： H01L39/14 ,  H01L29/06 ,  B05D5/12 ,  H01B12/00

CPC分类号： H01L39/146 ,  Y10S505/702

摘要： A superconducting device or a super-FET has a pair of superconducting electrode regions (20b,20c) consisting of a thin film (20)oxide superconductor being deposited on a substrate (5) and a weak link region (20a), the superconducting electrode regions (20b, 20c) being positioned at opposite sides of the weak link region (20a) these superconducting electrode regions (20b, 20c) and the weak link region (20a) being formed on a common plane surface of the substrate (5). The weak link region (20a) is produced by local diffusion of constituent element(s) of the substrate (5) into the thin film (20) of the oxide superconductor in such a manner that a substantial wall thickness of the thin film (20) of the oxide superconductor is reduced at the weak link region (20a) so as to leave a weak link or superconducting channel (10) in the thin film (20) of oxide superconductor over a non-superconducting region (50) which is produced by the diffusion.

摘要翻译： 超导器件或超FET具有一对超导电极区域（20b，20c），其由沉积在衬底（5）和弱连接区域（20a）上的薄膜（20）氧化物超导体组成，超导电极 所述超导电极区域（20b，20c）和所述弱连接区域（20a）形成在所述基板（5）的公共平面上，所述区域（20b，20c）位于所述弱连接区域（20a）的相对侧。 弱连接区域（20a）是通过将衬底（5）的构成元件局部扩散到氧化物超导体的薄膜（20）中，以使薄膜（20）的实质壁厚 氧化物超导体在弱连接区域（20a）处被减小以在氧化物超导体的薄膜（20）中在非超导区域（50）上留下弱连接或超导通道（10） 通过扩散。

公开(公告)号：US5494891A

公开(公告)日：1996-02-27

申请号：US354048

申请日：1994-12-06

申请人： Takao Nakamura ,  Michitomo Iiyama

发明人： Takao Nakamura ,  Michitomo Iiyama

IPC分类号： H01L39/14 ,  H01L39/24 ,  H01B12/00

CPC分类号： H01L39/146 ,  Y10S505/701 ,  Y10S505/728

摘要： A superconducting device comprises a substrate, a non-superconducting layer formed in a principal surface of said substrate, an extremely thin superconducting channel formed of an oxide superconductor thin film on the non-superconducting layer. A superconducting source region and a superconducting drain region of a relatively thick thickness are formed of the oxide superconductor at the both sides of the superconducting channel separated from each other but electrically connected through the superconducting channel, so that a superconducting current can flow through the superconducting channel between the superconducting source region and the superconducting drain region. The superconducting device further includes a gate electrode through a gate insulator on the superconducting channel for controlling the superconducting current flowing through the superconducting channel, in which the superconducting channel is connected to the superconducting source region and the superconducting drain region at the higher portions than their one third height portions.

摘要翻译： 超导器件包括衬底，形成在所述衬底的主表面中的非超导层，在非超导层上由氧化物超导体薄膜形成的极薄的超导通道。 在超导通道的两侧由氧化物超导体形成相对较厚厚度的超导源极区域和超导漏极区域，其通过超导通道彼此分开但电连接，使得超导电流可以流过超导 超导源极区域和超导漏极区域之间的沟道。 超导装置还包括通过超导通道上的栅极绝缘体的栅电极，用于控制流过超导通道的超导电流，其中超导通道与超导通道相连的超导源极区域和超导漏极区域的高导电区域 三分之一高度部分。

公开(公告)号：US5452464A

公开(公告)日：1995-09-19

申请号：US134691

申请日：1993-10-12

申请人： Shingo Nomura ,  Tsuyoshi Muramatsu ,  Souichi Miyata ,  Tatsuyuki Kuwabara ,  Masaharu Tomita ,  Kiyotaka Nagamura ,  Takao Nakamura

发明人： Shingo Nomura ,  Tsuyoshi Muramatsu ,  Souichi Miyata ,  Tatsuyuki Kuwabara ,  Masaharu Tomita ,  Kiyotaka Nagamura ,  Takao Nakamura

IPC分类号： G06F15/82 ,  G06F13/38

CPC分类号： G06F15/82

摘要： A data driven type information processing apparatus includes an information processing unit for carrying out an operation process according to a data flow program based on a data packet with a tag attached thereto, and a tag attaching unit provided in an input stage of the information processing unit. The tag attaching unit attaches a prescribed tag to data without a tag, which is applied externally or from another information processing apparatus connected on-line to generate a tagged data packet, and applies the tagged packet to the information processing unit. An information processing apparatus which is connected on-line to the present information processing apparatus and mutually exchanges the processed data mutually is not limited to either von Neumann type or non Neumann type (data driven type). Accordingly, the data driven type information processing apparatus of the present invention can be used together with various types of information processing apparatus, and a system capable of processing both tagged and untagged data can be constructed.

摘要翻译： 数据驱动型信息处理装置包括：信息处理单元，用于根据具有附加标签的数据包执行根据数据流程序的操作处理;以及标签附着单元，设置在信息处理单元的输入级中 。 标签附着单元将规定的标签附加到没有标签的数据，该标签在外部应用，或者从在线连接的另一信息处理设备应用，以生成标记数据分组，并将标记的分组应用于信息处理单元。 在线连接到本信息处理装置并相互交换处理的数据的信息处理装置不限于冯诺依曼型或非诺依曼型（数据驱动型）。 因此，本发明的数据驱动型信息处理装置可以与各种类型的信息处理装置一起使用，并且可以构建能够处理标记和未标记数据的系统。

公开(公告)号：US5446016A

公开(公告)日：1995-08-29

申请号：US196541

申请日：1994-02-15

申请人： So Tanaka ,  Takao Nakamura ,  Michitomo Iiyama

发明人： So Tanaka ,  Takao Nakamura ,  Michitomo Iiyama

IPC分类号： H01L39/24

CPC分类号： H01L39/2496 ,  H01L39/2464 ,  Y10S505/702 ,  Y10S505/728

摘要： A method for forming a patterned oxide superconductor thin film on a substrate comprises steps of forming a metal or semi-metal layer on a portion of the substrate, on which the oxide superconductor thin film will be formed, forming a layer of a material including silicon on a portion of the substrate, on which an insulating layer will be formed, removing the metal or semi-metal layer and depositing an oxide superconductor thin film over the substrate.

摘要翻译： 在衬底上形成图案化氧化物超导体薄膜的方法包括以下步骤：在衬底的一部分上形成金属或半金属层，在其上将形成氧化物超导体薄膜，形成包括硅的材料层 在其上将形成绝缘层的衬底的一部分上，去除金属或半金属层并在衬底上沉积氧化物超导体薄膜。

公开(公告)号：US5430012A

公开(公告)日：1995-07-04

申请号：US983431

申请日：1992-12-02

申请人： Takao Nakamura ,  Hiroshi Inada ,  Michitomo Iiyama

发明人： Takao Nakamura ,  Hiroshi Inada ,  Michitomo Iiyama

IPC分类号： H01L23/498 ,  H01L39/06 ,  H01L39/08 ,  H01L39/12

CPC分类号： H01L23/49888 ,  H01L2924/0002 ,  Y10S505/703

摘要： A superconducting multilayer interconnection comprises a substrate having a principal surface, a first superconducting current path of a c-axis orientated oxide superconductor thin film formed on the principal surface of the substrate, an insulating layer on the first superconducting current path, and a second superconducting current path of a c-axis orientated oxide superconductor thin film formed on the insulating layer so that the first and second superconducting current paths are insulated by the insulating layer. The superconducting multilayer interconnection further comprises a superconducting interconnect current path of an a-axis orientated oxide superconductor thin film, through which the first and second superconducting current paths are electrically connected each other. In the superconducting multilayer interconnection, at least one of the first and second superconducting current paths has a step portion and the superconducting interconnect current path is positioned at the step portion so that the interface area between the superconducting current path and the superconducting interconnect current path is enlarged.

摘要翻译： 超导多层互连包括具有主表面的衬底，形成在衬底的主表面上的c轴取向的氧化物超导体薄膜的第一超导电流路径，第一超导电流路径上的绝缘层和第二超导电路 形成在绝缘层上的c轴取向的氧化物超导体薄膜的电流通路，使得第一和第二超导电流路径被绝缘层绝缘。 超导多层互连还包括a轴取向的氧化物超导体薄膜的超导互连电流路径，第一和第二超导电流路径通过该超导互连电流路径彼此电连接。 在超导多层互连中，第一和第二超导电流路径中的至少一个具有台阶部分，并且超导互连电流路径位于台阶部分，使得超导电流路径和超导互连电流路径之间的界面面积为 放大

公开(公告)号：US5423914A

公开(公告)日：1995-06-13

申请号：US335397

申请日：1994-11-03

申请人： Takao Nakamura ,  Michitomo Iiyama

发明人： Takao Nakamura ,  Michitomo Iiyama

IPC分类号： C01G1/00 ,  C23C14/08 ,  C23C14/24 ,  C23C14/50 ,  C23C14/56 ,  C30B23/02 ,  C30B23/08 ,  C30B25/02 ,  H01L21/203 ,  H01L39/24

CPC分类号： C23C14/087 ,  C23C14/08 ,  C23C14/24 ,  C23C14/505 ,  C23C14/568 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225 ,  H01L39/2432 ,  Y10S505/732

摘要： The invention provides a film deposition apparatus comprising a vacuum chamber provided with a partitioning means for dividing the vacuum chamber into a first sub-chamber and a second sub-chamber, the partitioning means including an opening for introducing a vacuum conductance for molecular flows between the first sub-chamber and the second sub-chamber so that a pressure difference can be created between the first sub-chamber and the second sub-chamber even when the opening is open. A gate valve is provided on the partitioning means for hermetically closing the opening of the partitioning means so as to shut off the molecular flows between the first sub-chamber and the second sub-chamber. At least two evaporation source sets each comprising at least one K cell are provided in the vacuum chamber in communication with an internal space of the vacuum chamber and designed to deposit a thin film at different deposition positions in the second sub-chamber and a main evacuating means is coupled to the first sub-chamber for evacuating the first sub-chamber to an ultra high vacuum. A rotatable sample holder is located within the second sub-chamber having at least two heads for holding substrate to be deposited so as to face different directions, the sample holder is rotatable so that the heads can be situated at the different deposition positions. The apparatus further comprises means for heating the substrates, a gas supplying means provided in the second sub-chamber so as to supply a predetermined gas to the second sub-chamber and an auxiliary evacuating means coupled to the second sub-chamber for evacuating the second sub-chamber to an ultra-high vacuum even when the gate valve is closed.

摘要翻译： 本发明提供了一种成膜装置，它包括一个真空室，该真空室设有分隔装置，用于将真空室分成第一子室和第二子室，该分隔装置包括一个用于在真空室之间引入分子流的真空电导的开口 第一子室和第二子室，使得即使当开口打开时也可以在第一子室和第二子室之间产生压力差。 在分隔装置上设有闸阀，用于密封分隔装置的开口，从而切断第一副室与第二副室之间的分子流。 在真空室中设置至少两个包括至少一个K电池的蒸发源组，其与真空室的内部空间连通，并设计成在第二子室中的不同沉积位置沉积薄膜，并且主抽真空 装置联接到第一子室，用于将第一子室抽空至超高真空。 可旋转的样品保持器位于第二子室内，具有至少两个用于保持待沉积的基板朝向不同方向的头，样品保持器可旋转，使得头可以位于不同的沉积位置。 该装置还包括用于加热基板的装置，设置在第二子室中以便向第二子室提供预定气体的气体供给装置和联接到第二子室的辅助抽空装置，用于将第二 即使当闸阀关闭时，也将其分成超高真空。

公开(公告)号：US5422490A

公开(公告)日：1995-06-06

申请号：US83035

申请日：1993-06-29

申请人： Takao Nakamura ,  Michitomo Iiyama

发明人： Takao Nakamura ,  Michitomo Iiyama

IPC分类号： H01J37/147 ,  H01J37/20 ,  H01J37/30 ,  H01J37/305 ,  H01J37/317

CPC分类号： H01J37/1474 ,  H01J37/3056 ,  H01J37/3172 ,  H01J37/3178

摘要： A focused ion beam implantation apparatus comprises a vacuum chamber, an ion source generating an ion beam, a means for accelerating the ion beam, a means for eliminating unwanted ion species in the ion beam, and a means for focusing the ion beam on a target. The apparatus further includes a means for scanning the ion beam relative to the target and means for inclining the ion beam relative to the target.

摘要翻译： 聚焦离子束注入装置包括真空室，产生离子束的离子源，用于加速离子束的装置，用于消除离子束中不需要的离子种类的装置，以及用于将离子束聚焦在靶上的装置 。 该装置还包括用于相对于目标扫描离子束的装置和用于相对于目标倾斜离子束的装置。

公开(公告)号：US5407903A

公开(公告)日：1995-04-18

申请号：US766184

申请日：1991-09-27

申请人： Takao Nakamura ,  Hiroshi Inada ,  Michitomo Iiyama

发明人： Takao Nakamura ,  Hiroshi Inada ,  Michitomo Iiyama

IPC分类号： H01L39/14 ,  H01L39/22 ,  H01B12/00

CPC分类号： H01L39/146 ,  Y10S505/701 ,  Y10S505/728

摘要： For manufacturing a superconducting device, a first c-axis orientated oxide superconductor thin film having a very thin thickness is formed on a principal surface of a substrate, and a stacked structure of a gate insulator and a gate electrode is formed on a portion of the first oxide superconductor thin film. An a-axis orientated oxide superconductor thin film is grown, using the gate electrode as a mask, so that second and third superconducting regions having a relatively thick thickness are formed at both sides of the gate electrode, electrically isolated from the gate electrode. The superconducting device thus formed can functions as a super-FET.

摘要翻译： 为了制造超导装置，在基板的主表面上形成具有非常薄的厚度的第一c轴取向的氧化物超导薄膜，并且在绝缘体的一部分上形成栅极绝缘体和栅电极的层叠结构 第一氧化物超导体薄膜。 使用栅电极作为掩模来生长a轴取向的氧化物超导体薄膜，使得在栅电极的两侧形成具有较厚厚度的第二和第三超导区域，与栅电极电隔离。 这样形成的超导器件可以用作超级FET。

公开(公告)号：US5236896A

公开(公告)日：1993-08-17

申请号：US771986

申请日：1991-10-08

申请人： Takao Nakamura ,  Hiroshi Inada ,  Michitomo Iiyama

发明人： Takao Nakamura ,  Hiroshi Inada ,  Michitomo Iiyama

IPC分类号： H01L39/14

CPC分类号： H01L39/146 ,  Y10S505/702 ,  Y10S505/703 ,  Y10S505/729 ,  Y10T29/413

摘要： A superconducting device includes a superconducting channel consituted of an oxide superconductor thin film formed on a substrate, a superconductor source electrode and a superconductor drain electrode formed at opposite ends of the superconducting channel, so that a superconducting current can flow through the superconducting channel between the source electrode and the drain electrode. A gate electrode is located through an insulating layer on the superconducting channel so as to control the superconducting current flowing through the superconducting channel. The oxide superconductor thin film of the superconducting channel is formed of a c-axis oriented oxide superconductor crystal, and the oxide superconductor thin film of the superconductor source electrode and the superconductor drain electrode are formed of an a-axis oriented oxide superconductor crystal. The superconducting channel is continuous with the superconductor source electrode and the superconductor drain electrode.