摘要:
A method of forming a polycrystalline silicon thin film improved in crystallinity and a channel of a transistor superior in electrical characteristics by the use of such a polycrystalline silicon thin film. An amorphous silicon layer of a thickness preferably of 30 nm to 50 nm is formed on a substrate. Next, substrate heating is performed to set the amorphous silicon layer to preferably 350.degree. C. to 500.degree. C., more preferably 350.degree. C. to 450.degree. C. Then, at least the amorphous silicon layer is irradiated with laser light of an excimer laser energy density of 100 mJ/cm.sup.2 to 500 mJ/cm.sup.2, preferably 280 mJ/cm.sup.2 to 330 mJ/cm.sup.2, and a pulse width of 80 ns to 200 ns, preferably 140 ns to 200 ns, so as to directly anneal the amorphous silicon layer and form a polycrystalline silicon thin film. The total energy of the laser used for the irradiation of excimer laser light is at least 5 J, preferably at least 10 J.
摘要翻译:通过使用这种多晶硅薄膜,形成提高结晶度的多晶硅薄膜的方法和电特性优异的晶体管的沟道。 在基板上形成厚度优选为30nm〜50nm的非晶硅层。 接下来,进行基板加热以将非晶硅层设定为350℃至500℃,更优选350℃至450℃。然后,至少对非晶硅层照射激光 准分子激光能量密度为100mJ / cm 2至500mJ / cm 2,优选为280mJ / cm 3至330mJ / cm 2,脉冲宽度为80ns至200ns,优选为140ns至200ns,以便直接退火 非晶硅层,形成多晶硅薄膜。 用于照射准分子激光的激光的总能量为至少5J,优选为至少10J。
摘要:
A semiconductor nonvolatile memory device capable of lowering an operation voltage such as an erase voltage and capable of lowering costs and a method of production of the same, wherein a thin film transistor acting as the memory transistor is formed with a semiconductor layer 31b having a channel formation region formed on an insulating substrate 10 made of glass or plastic, a charge storing layer 32a formed on the semiconductor layer, a control gate 33a formed above the charge storing layer, and source and drain regions formed connected to the channel formation region.
摘要:
A method of forming a polycrystalline silicon thin film includes irradiating an amorphous silicon layer with laser light of an excimer laser energy density of 100 mJ/cm.sup.2 to 500 mJ/cm.sup.2, preferably 280 mJ/cm.sup.2 to 330 mJ/cm.sup.2, and a pulse width of 80 ns to 200 ns, preferably 140 ns to 200 ns, so as to directly anneal the amorphous silicon layer and form a polycrystalline silicon thin film. The total energy of the laser used for the irradiation of excimer laser light is at least 5 J, preferably at least 10 J. The laser device includes an homogenizer movably mounted at the end of the optical path of the laser beam.
摘要翻译:形成多晶硅薄膜的方法包括用准分子激光能量密度为100mJ / cm 2至500mJ / cm 2,优选280mJ / cm 2至330mJ / cm 2的激光照射非晶硅层,脉冲宽度 80ns至200ns,优选140ns至200ns,以便直接退火非晶硅层并形成多晶硅薄膜。 用于照射准分子激光的激光的总能量为至少5J,优选为至少10J。激光装置包括可移动地安装在激光束的光路端部的均质器。
摘要:
A thin-film semiconductor crystal is formed by depositing a thin film of amorphous silicon on a substrate, introducing ions selectively into a predetermined region of the thin film of amorphous silicon, and growing a single semiconductor crystal in the thin film of amorphous silicon by way of solid-phase crystal growth. A semiconductor device which employs the thin-film semiconductor crystal has a channel in the region where the ions are selectively introduced.
摘要:
An electromagnetic relay which is small in size, low in power consumption, high in productivity, and long in service life and which operates with high accuracy. The electromagnetic relay in which the electromagnet is energized and deenergized to swing its armature to drive a slide card, and a movable contact piece forming a contact mechanism is swung by the card, wherein a small gap is formed between the movable contact piece and a part of an end of the card, when the card is returned.
摘要:
When a thin film transistor is formed by forming a polycrystalline silicon thin film of a large grain size, the uniformity of film quality within an active region can be improved more reliably, whereby a carrier mobility of a transistor can be suppressed from being fluctuated. Therefore, the thin film transistor can be enhanced in efficiency. There is provided a method of making a thin film transistor in which a dot-shaped core from which crystal is to be grown is produced on an amorphous silicon thin film at its predetermined location and solid phase growth is performed to grow crystal to thereby form a silicon thin film. The core from which crystal is to be grown is produced on the thin film transistor at its portion near the outside of a region in which an active region is formed.
摘要:
A control system for adjusting an antenna rotatably mounted on a vehicle to directly receive a transmitting signal from a geostationary satellite so as to apply it to a receiving equipment on the vehicle. The control system comprises a first sensor for sensing a first difference between a standard direction and a travelling direction of the vehicle, a second sensor for sensing a second difference between the travelling direction of the vehicle and a direction of the antenna, a microcomputer programmed to determine a third difference between the travelling direction of the vehicle and a direction of the satellite in accordance with the first difference on a basis of a predetermined difference between the standard direction and the direction of the satellite and to determine an adjustment angle for rotation of the antenna in accordance with the second and third differences, and an actuator for effecting for rotation of the antenna with the adjustment angle.
摘要:
A mechanism for attaching to a laminated plastic sheet a fastener profile wherein the preformed sheet is removed from a roll and passed through a heating chamber having controlled humidity and thereafter passing said sheet over a roll which forms a joining zone with an extruded plastic profile strip fed onto the sheet with a jet of air directed thereagainst, and the joined sheet and strip thereafter passing through a chamber where the strip is cooled and the heat in the sheet is maintained.
摘要:
A farmland management system includes an information detection unit configured to acquire information relating to a crop being cultivated, a storage unit configured to store crop registration information for estimating a growth condition of the crop, a growth estimation unit configured to refer to the crop registration information and estimate the growth condition of the crop based on the information relating to the crop and the crop registration information, and a display unit configured to display the growth condition estimated by the growth estimation unit.