公开(公告)号：US20130112935A1

公开(公告)日：2013-05-09

申请号：US13810245

申请日：2011-11-30

申请人： Atsushi Himeno ,  Haruyuki Sorada ,  Yukio Hayakawa ,  Takumi Mikawa

发明人： Atsushi Himeno ,  Haruyuki Sorada ,  Yukio Hayakawa ,  Takumi Mikawa

IPC分类号： H01L45/00

CPC分类号： H01L45/1253 ,  H01L27/101 ,  H01L27/1052 ,  H01L27/2409 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1625 ,  H01L45/1675

摘要： A nonvolatile memory element according to the present invention includes a first metal line; a plug formed on the first metal line and connected to the first metal line; a stacked structure including a first electrode, a second electrode, and a variable resistance layer, the stacked structure being formed on a plug which is connected to the first electrode; a second metal line formed on the stacked structure and directly connected to the second electrode; and a side wall protective layer which covers the side wall of the stacked structure and has an insulating property and an oxygen barrier property, wherein part of a lower surface of the second metal line is located under an upper surface of the stacked structure.

摘要翻译： 根据本发明的非易失性存储元件包括第一金属线; 形成在所述第一金属线上并连接到所述第一金属线的插头; 包括第一电极，第二电极和可变电阻层的堆叠结构，所述堆叠结构形成在连接到所述第一电极的插头上; 形成在所述堆叠结构上并直接连接到所述第二电极的第二金属线; 以及侧壁保护层，其覆盖层叠结构的侧壁，并且具有绝缘性和氧阻隔性，其中第二金属线的下表面的一部分位于堆叠结构的上表面的下方。

公开(公告)号：US08369161B2

公开(公告)日：2013-02-05

申请号：US13026075

申请日：2011-02-11

申请人： Yukio Hayakawa

发明人： Yukio Hayakawa

IPC分类号： G11C16/02

CPC分类号： H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/7887

摘要： A semiconductor device includes an insulation layer (14) provided on a semiconductor substrate (12), a p-type semiconductor region (16) provided on the insulation layer, an isolation region (18) provided that surrounds the p-type semiconductor region to reach the insulation layer, an n-type source region (20) and an n-type drain region (22) provided on the p-type semiconductor region, a charge storage region (30) provided above the p-type semiconductor region between the n-type source region and the n-type drain region, and an voltage applying portion that applies a different voltage to the p-type semiconductor region while any of programming, erasing and reading a different data of a memory cell that has the charge storage region is being preformed.

摘要翻译： 半导体器件包括设置在半导体衬底（12）上的绝缘层（14），设置在绝缘层上的p型半导体区域（16），设置在p型半导体区域周围的隔离区域（18） 到达绝缘层，设置在p型半导体区域上的n型源极区域（20）和n型漏极区域（22），设置在p型半导体区域之上的p型半导体区域上方的电荷存储区域（30） n型源极区域和n型漏极区域以及对p型半导体区域施加不同电压的电压施加部，同时对具有电荷存储器的存储单元的不同数据的编程，擦除和读取进行任何编程， 区域正在执行。

公开(公告)号：US08318566B2

公开(公告)日：2012-11-27

申请号：US13156122

申请日：2011-06-08

申请人： Fumihiko Inoue ,  Haruki Souma ,  Yukio Hayakawa

发明人： Fumihiko Inoue ,  Haruki Souma ,  Yukio Hayakawa

IPC分类号： H01L21/336

CPC分类号： H01L27/11568 ,  H01L21/28282 ,  H01L27/11565

摘要： Devices and methods for isolating adjacent charge accumulation layers in a semiconductor device are disclosed. In one embodiment, a semiconductor device comprises a bit line formed in a semiconductor substrate, a charge accumulation layer formed on the semiconductor substrate, a word line formed on the charge accumulation layer across the bit line, and a channel region formed in the semiconductor substrate below the word line and between the bit line and its adjacent bit line. For the semiconductor device, the charge accumulation layer is formed above the channel region in a widthwise direction of the word line, and a width of the word line is set to be narrower than a distance between an end of the channel region and a central part of the channel region in a lengthwise direction of the word line.

摘要翻译： 公开了用于隔离半导体器件中的相邻电荷累积层的装置和方法。 在一个实施例中，半导体器件包括形成在半导体衬底中的位线，形成在半导体衬底上的电荷累积层，形成在位线上的电荷累积层上的字线和形成在半导体衬底中的沟道区 在字线之下以及位线和其相邻位线之间。 对于半导体器件，电荷累积层形成在字线的宽度方向上的沟道区上方，并且字线的宽度被设定为比沟道区的端部与中心部的距离更窄 在字线的长度方向上的通道区域。

公开(公告)号：US07928018B2

公开(公告)日：2011-04-19

申请号：US10594895

申请日：2005-03-31

申请人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Hiroshi Yamauchi ,  Yukio Hayakawa

发明人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Hiroshi Yamauchi ,  Yukio Hayakawa

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/02 ,  C23C16/00

CPC分类号： H01L21/3105 ,  H01J2237/3387 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/3143 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11568

摘要： The application of oxynitriding treatment to electronic appliances involve the problem that N2 ions are formed to thereby damage any oxynitride film. It is intended to provide a method of plasma treatment capable of realizing high-quality oxynitriding and to provide a process for producing an electronic appliance in which use is made of the method of plasma treatment. There is provided a method of plasma treatment, comprising generating plasma with a gas for plasma excitation and introducing a treating gas in the plasma to thereby treat a treatment subject, wherein the treating gas contains nitrous oxide gas, this nitrous oxide gas introduced in a plasma of

摘要翻译： 氧化氮化处理对电子设备的应用涉及形成N2离子从而损坏任何氮氧化物膜的问题。 旨在提供能够实现高质量氮氧化的等离子体处理方法，并提供一种使用等离子体处理方法的电子设备的制造方法。 提供了一种等离子体处理方法，包括用等离子体激发的气体产生等离子体并在等离子体中引入处理气体，从而处理处理对象，其中处理气体含有一氧化二氮气体，这种一氧化二氮气体引入等离子体 的<2.24eV电子温度，从而降低了任何绝缘膜损伤的离子的产生，从而实现高质量的氮氧化。 此外，提供了一种使用等离子体处理方法的电子设备的制造方法。

公开(公告)号：US20080268657A1

公开(公告)日：2008-10-30

申请号：US10594895

申请日：2005-03-31

申请人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Hiroshi Yamauchi ,  Yukio Hayakawa

发明人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Hiroshi Yamauchi ,  Yukio Hayakawa

IPC分类号： H01L21/469 ,  H05H1/24

CPC分类号： H01L21/3105 ,  H01J2237/3387 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/3143 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11568

摘要： The application of oxynitriding treatment to electronic appliances involve the problem that N2 ions are formed to thereby damage any oxynitride film. It is intended to provide a method of plasma treatment capable of realizing high-quality oxynitriding and to provide a process for producing an electronic appliance in which use is made of the method of plasma treatment. There is provided a method of plasma treatment, comprising generating plasma with a gas for plasma excitation and introducing a treating gas in the plasma to thereby treat a treatment subject, wherein the treating gas contains nitrous oxide gas, this nitrous oxide gas introduced in a plasma of

摘要翻译： 对电子器件应用氧氮化处理涉及形成N 2+离子从而损坏任何氮氧化物膜的问题。 旨在提供能够实现高质量氮氧化的等离子体处理方法，并提供一种使用等离子体处理方法的电子设备的制造方法。 提供了一种等离子体处理方法，包括用等离子体激发的气体产生等离子体并在等离子体中引入处理气体，从而处理处理对象，其中处理气体含有一氧化二氮气体，这种一氧化二氮气体引入等离子体 的<2.24eV电子温度，从而降低了任何绝缘膜损伤的离子的产生，从而实现高质量的氮氧化。 此外，提供了一种使用等离子体处理方法的电子设备的制造方法。

公开(公告)号：US20080083946A1

公开(公告)日：2008-04-10

申请号：US11539984

申请日：2006-10-10

申请人： Shenqing Fang ,  Rinji Sugino ,  Jayendra Bhakta ,  Takashi Orimoto ,  Hiroyuki Nansei ,  Yukio Hayakawa ,  Takayuki Maruyama ,  Hidehiko Shiraiwa ,  Kuo-Tung Chang ,  Lei Xue ,  Meng Ding ,  Amol Ramesh Joshi ,  YouSeok Suh ,  Harpreet Sachar

发明人： Shenqing Fang ,  Rinji Sugino ,  Jayendra Bhakta ,  Takashi Orimoto ,  Hiroyuki Nansei ,  Yukio Hayakawa ,  Takayuki Maruyama ,  Hidehiko Shiraiwa ,  Kuo-Tung Chang ,  Lei Xue ,  Meng Ding ,  Amol Ramesh Joshi ,  YouSeok Suh ,  Harpreet Sachar

IPC分类号： H01L29/792 ,  H01L21/8238

CPC分类号： H01L29/792 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/11568

摘要： A memory cell system is provided including forming a first insulator layer over a semiconductor substrate, forming a charge trap layer over the first insulator layer, and slot plane antenna plasma oxidizing the charge trap layer for forming a second insulator layer.

摘要翻译： 提供了一种存储单元系统，包括在半导体衬底上形成第一绝缘体层，在第一绝缘体层上形成电荷陷阱层，以及缝隙平面天线等离子体氧化用于形成第二绝缘体层的电荷陷阱层。

公开(公告)号：US06811271B2

公开(公告)日：2004-11-02

申请号：US10135371

申请日：2002-05-01

申请人： Yukio Hayakawa ,  Morio Shimizu

发明人： Yukio Hayakawa ,  Morio Shimizu

IPC分类号： G02B7182

CPC分类号： G02B19/0023 ,  F24S23/745 ,  F24S23/79 ,  G02B19/0042 ,  Y02E10/45

摘要： The electromagnetic wave focusing device has a mirror group consisting of a focal-line type primary reflective mirror and secondary reflective mirror which have a unique parabolic cross-sectional shape. Incident light rays are primarily reflected by the primary reflective mirror and are then secondarily reflected by the secondary reflective mirror, so that solar rays are focused at one point. The electromagnetic wave focusing device can be made extremely thin and light-weight, and can be folded without causing great loss of precision or great increase in mass. Consequently, the mirror bodies can be folded into a compact form and loaded inside the restricted space of a rocket or the like; thus, the device can be transported into aerospace, and a sunlight focusing device having high focusing performance can be reproduced on-site with a high precision.

摘要翻译： 电磁波聚焦装置具有由具有独特的抛物面截面形状的焦线型主反射镜和二次反射镜组成的反射镜组。 入射光线主要被主反射镜反射，然后被二次反射镜二次反射，使得太阳光线聚焦在一个点上。 电磁波聚焦装置可以制造得非常薄且重量轻，并且可以折叠而不会造成很大的精度损失或大量的质量增加。 因此，镜体可以折叠成紧凑形式并且被装载在火箭等的限制空间内; 因此，该装置可以被运送到航空航天中，并且可以高精度地现场再现具有高聚焦性能的太阳光聚焦装置。

公开(公告)号：US06615961B2

公开(公告)日：2003-09-09

申请号：US09893716

申请日：2001-06-28

申请人： Satoshi Komatsu ,  Yukio Hayakawa ,  Ryosuke Fujiya ,  Kiyoshi Nakahara

发明人： Satoshi Komatsu ,  Yukio Hayakawa ,  Ryosuke Fujiya ,  Kiyoshi Nakahara

IPC分类号： F16F936

CPC分类号： F16F9/36

摘要： To positively prevent a pressure medium sealed into an outer tube from leaking out from a clearance relative to an oil damper, there is provided a seal construction of a shock absorber 1 with leveling function wherein a seal mechanism 3 is disposed in an outer tube 2 to slidably insert a shock absorber 4 thereinto, a piston rod 5 extending from the shock absorber 4 is connected on the outer tube 2 side, a pressure medium sealed into the outer tube 2 is heated by a heating means 7 and leveling is carried out while controlling the support force exerting on the shock absorber 4, the seal construction being constituted that a free piston 15 is interposed opposite to the seal mechanism 3 between the outer tube 2 and the shock absorber 4, and the seal mechanism 3 and the free piston 15 compart and form a lubricating oil chamber 16 therebetween whereas the free piston 15 is always biased toward the lubricating oil chamber 16.

公开(公告)号：US06247683B1

公开(公告)日：2001-06-19

申请号：US09364266

申请日：1999-07-30

申请人： Yukio Hayakawa ,  Kiyoshi Nakahara

发明人： Yukio Hayakawa ,  Kiyoshi Nakahara

IPC分类号： F16F500

CPC分类号： F16F9/06 ,  B60G17/002 ,  B60G17/08

摘要： A case is provided on an outside of a damper main body that is connected to a damper rod and which can freely move in vertical directions. A pressure chamber is formed between the damper main body and the case in which a pressure medium is sealed up, which pressure medium changes its phase between vapor and liquid phases. The pressure medium is heated and vaporized by heat generated by virtue of a damping effect of the damper, while the pressure medium is condensed by virtue of heat radiating from the case by running wind. During the running on a rough road when the heating value of the damper becomes large, the internal pressure of the pressure chamber is increased to thereby raise the vehicle height, and during the running at high speeds when the heat radiating value becomes large, the internal pressure of the pressure chamber is decreased to thereby lower the vehicle height.

摘要翻译： 在阻尼器主体的外侧设置有与阻尼器杆连接并能够在垂直方向自由移动的壳体。 在阻尼器主体和压力介质密封的壳体之间形成有压力室，该压力介质在蒸气相和液相之间改变其相位。 压力介质由于阻尼器的阻尼效应而产生的热量被加热和蒸发，同时压力介质通过运行风从壳体散发而被冷凝。 当阻尼器的加热值变大时，在粗糙的道路上运行时，压力室的内部压力增加，从而提高车辆高度，并且在散热值变大时在高速行驶期间，内部 压力室的压力降低，从而降低车辆高度。

公开(公告)号：US5175689A

公开(公告)日：1992-12-29

申请号：US564764

申请日：1990-08-03

申请人： Hirokazu Matsushita ,  Yukio Hayakawa ,  Yoshiteru Iwata

发明人： Hirokazu Matsushita ,  Yukio Hayakawa ,  Yoshiteru Iwata

IPC分类号： B23Q15/00 ,  G05B19/4063 ,  G05B19/4097 ,  G05B19/42

CPC分类号： G05B19/4207

摘要： A data processing apparatus generates data denoting a predetermined point on a virtual surface shape formed denoting the basis of digitized data on a tool path for an inverted shape work piece, to thereby facilitates examination of the size of the inverted shape work piece. That is, digitized data obtained by scanning a model shape is input and edited to prepare digitized data representing a tool path for machining a work piece. The digitized data representing the tool path is converted to prepare a numerical control working program. Work piece examination data are also prepared based on denoting an arbitrary measurement point of a scanning probe, data denoting the measuring direction at the measuring point and the digitized data representing the tool path for machining the work piece.

摘要翻译： 数据处理装置产生表示在倒置的工件的刀具路径上表示数字化数据的基础的虚拟表面形状上的预定点的数据，从而有助于检查倒置的工件的尺寸。 也就是说，通过扫描模型形状获得的数字化数据被输入和编辑，以准备表示用于加工工件的刀具路径的数字化数据。 表示刀具路径的数字化数据被转换为准备数控工作程序。 工件检查数据也是基于表示扫描探头的任意测量点，表示测量点的测量方向的数据和表示用于加工工件的刀具路径的数字化数据而准备的。