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    Spinel ferrite thin film and method of manufacturing the same
    31.
    发明授权
    Spinel ferrite thin film and method of manufacturing the same 有权
    尖晶石型铁氧体薄膜及其制造方法

    公开(公告)号：US06488908B1

    公开(公告)日：2002-12-03

    申请号：US09652011

    申请日：2000-08-31

    申请人： Tomoji Kawai ,  Hitoshi Tabata ,  Yuji Muraoka

    发明人： Tomoji Kawai ,  Hitoshi Tabata ,  Yuji Muraoka

    IPC分类号： C01G4900

    CPC分类号： H01F41/205 ,  C23C14/08 ,  C30B23/002 ,  C30B23/02 ,  C30B29/26 ,  G11B7/00

    摘要： A substrate and a target are disposed within a vacuum chamber, and an oxygen partial pressure within the vacuum chamber is set to 1×10−5 or less. Under this condition, a spinel ferrite thin film selected from the group consisting of compounds represented by the formula AE1+tFe2−2tTMtO4, where AE represents an alkaline earth metal or an alkali metal, TM represents a transition metal and t falls within a range of between 0.2 and 0.6, and compounds represented by the formula Zn1−xCoxFe2O4, where x falls within a range of between 0.2 and 0.7, is deposited on the substrate by laser beam deposition. The particular method makes it possible to provide a spinel ferrite thin film realizing a spin glass state under temperatures around or higher than room temperature and capable of controlling the spin state by light.

    摘要翻译： 将基板和靶设置在真空室内，真空室内的氧分压设定为1×10 -5以下。 在这种条件下，选自由式AE1 + tFe2-2tTMtO4表示的化合物组成的组的尖晶石铁氧体薄膜，其中AE表示碱土金属或碱金属，TM表示过渡金属，t落在 在0.2和0.6之间，通过激光束沉积在衬底上沉积由式Zn1-xCoxFe2O4表示的化合物，其中x落在0.2和0.7之间的范围内。 具体的方法使得可以提供在大约或高于室温的温度下实现旋转玻璃态的尖晶石铁氧体薄膜，并且能够通过光控制自旋状态。

    Photocatalytic treatment of water for the preparation of ultra pure water
    32.
    发明授权
    Photocatalytic treatment of water for the preparation of ultra pure water 失效
    光催化处理水制备超纯水

    公开(公告)号：US4863608A

    公开(公告)日：1989-09-05

    申请号：US166050

    申请日：1988-03-09

    申请人： Tomoji Kawai ,  Hisao Satoh ,  Yoshiharu Ohta

    发明人： Tomoji Kawai ,  Hisao Satoh ,  Yoshiharu Ohta

    IPC分类号： C02F1/32 ,  C02F1/72

    CPC分类号： C02F1/32 ,  Y10S210/90

    摘要： A new process step for purifying water from a small amount, particularly a last trace amount, of organic impurities included in total organic carbon (TOC) content is incorporated into known processes for the preparation of ultra pure water comprising one or more previous filtration steps and a series of purification steps known per se. The new step comprises irradiating the water to be treated with a light in the presence of a photocatalyst comprising an inorganic semiconductor selected from TiO.sub.2, SrTiO.sub.3 and CdS in fine particulate form and a noble metal and/or an oxide thereof selected from Pt, Pd, Ru, RuO.sub.2 and Rh deposited on said semiconductor particles for a period of time sufficient to oxidatively decompose the organic impurities, resulting in a decrease in TOC content of the water to a level lower than the minimum detection level of TOC detectors, typically

    摘要翻译： 用于净化水中少量，特别是最后痕量的总有机碳（TOC）含量中包含的有机杂质的新工艺步骤被并入已知的制备超纯水的方法中，其包括一个或多个先前的过滤步骤和 本身已知的一系列净化步骤。 新步骤包括在光催化剂存在下照射待处理的水，所述光催化剂包含选自TiO 2，SrTiO 3和细颗粒形式的CdS的无机半导体和选自Pt，Pd， Ru，RuO 2和Rh沉积在所述半导体颗粒上足以氧化分解有机杂质的时间，导致水的TOC含量降低到低于TOC检测器的最小检测水平的水平，通常<0.05mg C / l或<0.01mg C / l，这取决于特定检测器对最新的灵敏度。

    ORGANIC FIELD EFFECT TRANSISTOR AND ITS PRODUCTION METHOD
    35.
    发明申请
    ORGANIC FIELD EFFECT TRANSISTOR AND ITS PRODUCTION METHOD 有权
    有机场效应晶体及其生产方法

    公开(公告)号：US20100051927A1

    公开(公告)日：2010-03-04

    申请号：US12551205

    申请日：2009-08-31

    申请人： Masateru TANIGUCHI ,  Tomoji Kawai ,  Hideyuki Kawaguchi ,  Ikuo Fukui

    发明人： Masateru TANIGUCHI ,  Tomoji Kawai ,  Hideyuki Kawaguchi ,  Ikuo Fukui

    IPC分类号： H01L51/30 ,  H01L51/40

    CPC分类号： H01L51/052 ,  H01L51/0036 ,  H01L51/004 ,  H01L51/0043 ,  H01L51/0545

    摘要： An organic field effect transistor (OFET) having a structure of a conductor layer/an insulator layer/a semiconductor layer is provided. This OFET comprises an insulator layer formed by mixing a polymer compound produced by polymerizing or copolymerizing a monomer represented by the formula (1): CH2═CHCOO—(CH2)2—CN   (1) and/or a monomer represented by the formula (2): CH2═C(CH3)COO—(CH2)2—CN   (2) with a polymerizable and/or crosslinkable organic compound other than the monomer represented by the formula (1) or (2); and a semiconductor layer comprising an organic compound.

    摘要翻译： 提供具有导体层/绝缘体层/半导体层的结构的有机场效应晶体管（OFET）。 该OFET包括通过将由式（1）表示的单体：CH2 = CHCOO-（CH2）2-CN（1）表示的单体和/或由式（1）表示的单体 2）：CH 2 = C（CH 3）COO-（CH 2）2 -CN（2）与除式（1）或（2）表示的单体之外的可聚合和/或可交联的有机化合物; 以及包含有机化合物的半导体层。

    Tunneling magnetoresistive element, semiconductor junction element, magnetic memory and semiconductor light emitting element
    36.
    发明授权
    Tunneling magnetoresistive element, semiconductor junction element, magnetic memory and semiconductor light emitting element 失效
    隧道磁阻元件，半导体接合元件，磁存储器和半导体发光元件

    公开(公告)号：US07468282B2

    公开(公告)日：2008-12-23

    申请号：US11979584

    申请日：2007-11-06

    申请人： Hidekazu Tanaka ,  Tomoji Kawai

    发明人： Hidekazu Tanaka ,  Tomoji Kawai

    IPC分类号： H01L29/82

    CPC分类号： H01L33/26 ,  B82Y25/00 ,  G01R33/093 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/5607 ,  H01F10/3213 ,  H01F10/3254 ,  H01L29/868 ,  H01L43/08

    摘要： A pin junction element includes a ferromagnetic p-type semiconductor layer and a n-type semiconductor layer which are connected via an insulating layer, and which shows a tunneling magnetic resistance according to the magnetization of the ferromagnetic p-type semiconductor layer and the magnetization of the ferromagnetic n-type semiconductor layer. In this pin junction element, an empty layer is formed with an applied bias, thereby generating tunnel current via an empty layer. As a result, it is possible to generate tunnel current even when adopting a thicker insulating layer than that of the conventional tunnel magnetic resistance element.

    摘要翻译： 针结元件包括通过绝缘层连接的铁磁性p型半导体层和n型半导体层，并且其表现出根据铁磁性p型半导体层的磁化的隧道磁阻和磁化强度 铁磁n型半导体层。 在该引脚接合元件中，形成具有施加的偏压的空白层，从而经由空层产生隧道电流。 结果，即使采用比常规隧道磁阻元件更厚的绝缘层，也可以产生隧道电流。

    Method of Patterning Self-Organizing Material, Patterned Substrate of Self-Organizing Material and Method of Producing the Same, and Photomask Using Patterned Substrate of Self-Organizing Material
    37.
    发明申请
    Method of Patterning Self-Organizing Material, Patterned Substrate of Self-Organizing Material and Method of Producing the Same, and Photomask Using Patterned Substrate of Self-Organizing Material 审中-公开
    自组织材料的图案化方法，自组织材料的图案化基材及其制造方法以及使用自组织材料的图案化基材的光掩模

    公开(公告)号：US20080050659A1

    公开(公告)日：2008-02-28

    申请号：US11663826

    申请日：2005-09-29

    申请人： Toshihito Ohtake ,  Ken-ichiro Nakamatsu ,  Shinji Matsui ,  Hitoshi Tabata ,  Tomoji Kawai

    发明人： Toshihito Ohtake ,  Ken-ichiro Nakamatsu ,  Shinji Matsui ,  Hitoshi Tabata ,  Tomoji Kawai

    IPC分类号： B29C49/00 ,  G03F1/00

    CPC分类号： G03F7/20 ,  B82Y10/00 ,  B82Y40/00 ,  G01N21/553 ,  G01N21/554 ,  G03F7/0002 ,  H01L51/0022 ,  H01L2251/105 ,  Y10T428/24802

    摘要： It is intended to provide a method of patterning a self-organizing material whereby a self-organizing material having a self-organization ability such as a nucleic acid can be aligned and immobilized in a desired manner on a substrate by using the imprint process, a patterned substrate of a self-organizing material and a method of producing the same, and a photomask. An immobilization layer containing a binder capable of binding to a self-organizing material is formed on a substrate. Then this immobilization layer is patterned by transferring an uneven pattern formed in a mold thereto by the imprint process. The self-organizing material is supplied onto the face having the uneven pattern of the immobilization layer transferred thereto. Thus, the self-organizing material is immobilized following the uneven pattern of the immobilization layer owing to the self-organization ability of the material per se and the binding ability of the binder contained in the immobilization layer.

    摘要翻译： 旨在提供一种图案化自组织材料的方法，由此具有自组织能力的自组织材料如核酸可以通过使用压印方法以所需的方式在基板上对准和固定， 自组织材料的图案化衬底及其制造方法，以及光掩模。 在基材上形成含有能够结合自组织材料的粘合剂的固定层。 然后通过压印工艺将形成在模具中的不均匀图案转印到该固定层上。 将自组织材料供给到转印有固定层的不均匀图案的面上。 因此，由于材料本身的自组织能力和固定化层中所含的粘合剂的结合能力，自组织材料被固定在固定层的不均匀图案之后。

    Thin-layer chemical transistor and making method
    38.
    发明申请
    Thin-layer chemical transistor and making method 有权
    薄层化学晶体管及制作方法

    公开(公告)号：US20060043432A1

    公开(公告)日：2006-03-02

    申请号：US11199152

    申请日：2005-08-09

    申请人： Tomoji Kawai ,  Masateru Taniguchi ,  Ikuo Fukui

    发明人： Tomoji Kawai ,  Masateru Taniguchi ,  Ikuo Fukui

    IPC分类号： H01L23/58

    CPC分类号： H01L51/0508 ,  H01L51/002 ,  H01L51/0036 ,  H01L51/052

    摘要： In a thin-layer chemical transistor having a metal/solid electrolyte/semiconductor structure, the materials of which the solid electrolyte and semiconductor layers are made comprise organic solvent-soluble compounds. The transistor can be fabricated solely by solvent processes, typically printing techniques including ink jet printing.

    摘要翻译： 在具有金属/固体电解质/半导体结构的薄层化学晶体管中，制备固体电解质和半导体层的材料包括有机溶剂可溶性化合物。 晶体管可以仅通过溶剂工艺制造，通常是印刷技术，包括喷墨印刷。