公开(公告)号：US08102494B2

公开(公告)日：2012-01-24

申请号：US11950607

申请日：2007-12-05

申请人： Jiro Nishida ,  Yuji Egi ,  Takeshi Nishi ,  Shunpei Yamazaki

发明人： Jiro Nishida ,  Yuji Egi ,  Takeshi Nishi ,  Shunpei Yamazaki

IPC分类号： G02F1/1335

CPC分类号： G02B1/118 ,  G02B1/14 ,  G02F1/133502 ,  G02F2201/38

摘要： An anti-reflection film that can provide high visibility and has an anti-reflection function by which reflection of incident light from external can be further reduced, and a display device having such an anti-reflection film. A plurality of contiguous pyramidal projections is arranged in a geometric pattern, so that reflection of incident light is prevented. In addition, a protective layer formed of a material having a lower refractive index than the pyramidal projections is provided so as to fill a space between the plurality of pyramidal projections. The plurality of pyramidal projections has a hexagonal shape and can be densely arranged with no space therebetween. Further, since six sides of each pyramidal projection are provided at a different angle from the base, light can be effectively scattered in many directions.

摘要翻译： 可以提供高可见度并具有抗反射功能的防反射膜，通过该反射功能可以进一步减少来自外部的入射光的反射，以及具有这种防反射膜的显示装置。 多个相邻的金字塔形突起以几何图案布置，从而防止入射光的反射。 此外，提供由折射率低于金字塔形突起的材料形成的保护层，以填充多个锥体状突起之间的空间。 多个金字塔状突起具有六边形形状，并且可以密集地布置，其间没有间隙。 此外，由于每个金字塔形突起的六个侧面以与基部不同的角度设置，所以可以在许多方向上有效地散射光。

公开(公告)号：US07859627B2

公开(公告)日：2010-12-28

申请号：US11950677

申请日：2007-12-05

申请人： Jiro Nishida ,  Yuji Egi ,  Takeshi Nishi ,  Shunpei Yamazaki

发明人： Jiro Nishida ,  Yuji Egi ,  Takeshi Nishi ,  Shunpei Yamazaki

IPC分类号： G02F1/1335 ,  G02B27/00 ,  H01J17/49

CPC分类号： G02B1/118 ,  G02F1/133504 ,  G02F2201/38 ,  H01L51/5268 ,  H01L51/5281 ,  H05B33/22

摘要： An object of the present invention is to provide an antireflective film having an anti-reflection function with which reflection of external light which is incident on the antireflective film can be further reduced and a high-visibility display device having such an antireflective film. The tops of the plurality of pyramidal projections are evenly spaced and each side of the base of a pyramidal projection is in contact with one side of the base of an adjacent pyramidal projection. That is, one pyramidal projection is surrounded by other pyramidal projections, and the base of the pyramidal projection and the base of the adjacent pyramidal projection have a side in common.

摘要翻译： 本发明的目的是提供一种具有抗反射功能的防反射膜，能够进一步降低入射到防反射膜上的外部光的反射，并且具有这种抗反射膜的高可视度显示装置。 多个金字塔形突起的顶部是均匀间隔的，金字塔形突起的基部的每一侧与相邻金字塔形突起的基部的一侧接触。 也就是说，一个金字塔形突起被其他金字塔形突起包围，金字塔形突起的基部和相邻金字塔形突起的基部具有共同的一面。

公开(公告)号：US20080042926A1

公开(公告)日：2008-02-21

申请号：US11806071

申请日：2007-05-29

申请人： Yuji Egi ,  Takeshi Nishi ,  Kiyofumi Ogino ,  Shinya Sasagawa ,  Motomu Kurata ,  Hideomi Suzawa

发明人： Yuji Egi ,  Takeshi Nishi ,  Kiyofumi Ogino ,  Shinya Sasagawa ,  Motomu Kurata ,  Hideomi Suzawa

IPC分类号： G09G3/34

CPC分类号： G02B1/118 ,  C09K11/06 ,  C09K2211/1011 ,  C09K2211/1029 ,  C09K2211/185 ,  G02B1/14 ,  G02F1/133502 ,  H01J2211/442 ,  H01L27/3244 ,  H01L51/5281 ,  H05B33/22 ,  Y10T428/10

摘要： The display device includes an anti-reflection film having a plurality of projections over a display screen surface and a protective layer filling a space between the projections. The number of times of incidence of external light entering the display device on the anti-reflection film is increased; therefore, the amount of external light transmitted through the anti-reflection film is increased. Thus, the amount of external light reflected to a viewer side is reduced, and the cause of a reduction in visibility such as reflection can be eliminated. Further, since the plurality of projections is covered with a protective layer, entry of dust can be prevented, and physical strength of the anti-reflection film can be increased.

摘要翻译： 显示装置包括在显示屏表面上具有多个突起的防反射膜和填充突起之间的空间的保护层。 在抗反射膜上进入显示装置的外部光的入射次数增加; 因此，透过防反射膜的外部光量增加。 因此，反射到观察者侧的外部光量减少，并且可以消除诸如反射等可见性的降低的原因。 此外，由于多个突起被保护层覆盖，因此可以防止灰尘进入，并且可以提高抗反射膜的物理强度。

公开(公告)号：US20070284991A1

公开(公告)日：2007-12-13

申请号：US11806256

申请日：2007-05-30

申请人： Yuji Egi ,  Takeshi Nishi ,  Kiyofumi Ogino ,  Shinya Sasagawa ,  Motomu Kurata ,  Hideomi Suzawa

发明人： Yuji Egi ,  Takeshi Nishi ,  Kiyofumi Ogino ,  Shinya Sasagawa ,  Motomu Kurata ,  Hideomi Suzawa

IPC分类号： H01J29/88

CPC分类号： G02B1/118 ,  C09K11/06 ,  C09K2211/1011 ,  C09K2211/1029 ,  C09K2211/185 ,  G02F1/133502 ,  G02F2201/38 ,  H01L27/3244 ,  H01L51/5281 ,  H05B33/22

摘要： A display device includes an anti-reflection film having a plurality of projections over a display screen surface. An angle made by a base and a slope of each of the plurality of projections is equal to or greater than 84° and less than 90°.

摘要翻译： 显示装置包括在显示屏表面上具有多个突起的防反射膜。 由基座形成的角度和多个突起中的每一个的倾斜度等于或大于84°且小于90°。

公开(公告)号：US08624254B2

公开(公告)日：2014-01-07

申请号：US13226775

申请日：2011-09-07

申请人： Yuji Egi ,  Tetsuhiro Tanaka ,  Toshiyuki Isa ,  Hidekazu Miyairi ,  Koji Dairiki ,  Yoichi Kurosawa ,  Kunihiko Suzuki

发明人： Yuji Egi ,  Tetsuhiro Tanaka ,  Toshiyuki Isa ,  Hidekazu Miyairi ,  Koji Dairiki ,  Yoichi Kurosawa ,  Kunihiko Suzuki

IPC分类号： H01L29/04 ,  H01L29/786

CPC分类号： H01L29/78618 ,  H01L29/78648 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/78696

摘要： A highly reliable transistor in which change in electrical characteristics is suppressed is provided. A highly reliable transistor in which change in electrical characteristics is suppressed is manufactured with high productivity. A display device with less image deterioration over time is provided. An inverted staggered thin film transistor which includes, between a gate insulating film and impurity semiconductor films functioning as source and drain regions, a semiconductor stacked body including a microcrystalline semiconductor region and a pair of amorphous semiconductor regions. In the microcrystalline semiconductor region, the nitrogen concentration on the gate insulating film side is low and the nitrogen concentration in a region in contact with the amorphous semiconductor is high. Further, an interface with the amorphous semiconductor has unevenness.

摘要翻译： 提供了其中抑制电特性变化的高度可靠的晶体管。 以高生产率制造其中抑制电特性变化的高度可靠的晶体管。 提供了具有随时间图像劣化的显示装置。 一种倒置交错薄膜晶体管，其包括在栅极绝缘膜和用作源极和漏极区域的杂质半导体膜之间，包括微晶半导体区域和一对非晶半导体区域的半导体层叠体。 在微晶半导体区域中，栅绝缘膜侧的氮浓度低，与非晶半导体接触的区域的氮浓度高。 此外，与非晶半导体的界面具有不均匀性。

公开(公告)号：US20100096637A1

公开(公告)日：2010-04-22

申请号：US12423829

申请日：2009-04-15

申请人： Shunpei Yamazaki ,  Yuji Egi ,  Shinya Sasagawa ,  Motomu Kurata

发明人： Shunpei Yamazaki ,  Yuji Egi ,  Shinya Sasagawa ,  Motomu Kurata

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/78696

摘要： Off current of a thin film transistor is reduced, and on current of the thin film transistor is increased, and variation in electric characteristics is reduced. As a structure of semiconductor layers which form a channel formation region of a thin film transistor, a first semiconductor layer including a plurality of crystalline regions is provided on a gate insulating layer side; a second semiconductor layer having an amorphous structure is provided on a source region and drain region side; an insulating layer with a thickness small enough to allow carrier travel is provided between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer is in contact with the gate insulating layer. The second semiconductor layer is provided on an opposite side to a face of the first semiconductor layer which is in contact with the gate insulating layer.

摘要翻译： 薄膜晶体管的截止电流减小，薄膜晶体管的导通电流增大，电特性的变化也降低。 作为形成薄膜晶体管的沟道形成区域的半导体层的结构，在栅极绝缘层侧设置包括多个结晶区域的第一半导体层， 在源区和漏区侧设置具有非晶结构的第二半导体层; 在第一半导体层和第二半导体层之间设置具有足够小以允许载流子行进的厚度的绝缘层。 第一半导体层与栅极绝缘层接触。 第二半导体层设置在与栅极绝缘层接触的与第一半导体层的面相反的一侧。

公开(公告)号：US08916425B2

公开(公告)日：2014-12-23

申请号：US13184589

申请日：2011-07-18

申请人： Ryota Tajima ,  Tetsuhiro Tanaka ,  Takashi Ohtsuki ,  Ryo Tokumaru ,  Yuji Egi ,  Erika Kato ,  Miyako Morikubo

发明人： Ryota Tajima ,  Tetsuhiro Tanaka ,  Takashi Ohtsuki ,  Ryo Tokumaru ,  Yuji Egi ,  Erika Kato ,  Miyako Morikubo

IPC分类号： H01L21/00 ,  C30B29/08 ,  H01L29/786 ,  H01L29/04 ,  C30B29/06 ,  C30B25/18 ,  C30B25/10

CPC分类号： H01L29/78696 ,  C30B25/105 ,  C30B25/183 ,  C30B29/06 ,  C30B29/08 ,  H01L29/04 ,  H01L29/78618 ,  H01L29/78648

摘要： A seed crystal including mixed phase grains having high crystallinity with a low grain density is formed under a first condition, and a microcrystalline semiconductor film is formed over the seed crystal under a second condition which allows the mixed phase grains in the seed crystal to grow to fill a space between the mixed phase grains. In the first condition, the flow rate of hydrogen is 50 times or greater and 1000 times or less that of a deposition gas containing silicon or germanium, and the pressure in a process chamber is greater than 1333 Pa and 13332 Pa or less. In the second condition, the flow rate of hydrogen is 100 times or greater and 2000 times or less that of a deposition gas containing silicon or germanium, and the pressure in the process chamber is 1333 Pa or greater and 13332 Pa or less.

摘要翻译： 在第一条件下形成包括具有低晶粒密度的高结晶度的混合相晶粒的晶种，并且在第二条件下在晶种上形成微晶半导体膜，所述第二条件允许晶种中的混晶相生长至 填充混合晶粒之间的空间。 在第一条件下，氢气的流量为含有硅或锗的沉积气体的50倍以上且1000倍以下，处理室中的压力大于1333Pa，13332Pa以下。 在第二条件下，氢气的流量为含有硅或锗的沉积气体的100倍以上且2000倍以下，处理室内的压力为1333Pa以上且13332Pa以下。

公开(公告)号：US08525170B2

公开(公告)日：2013-09-03

申请号：US12423829

申请日：2009-04-15

申请人： Shunpei Yamazaki ,  Yuji Egi ,  Shinya Sasagawa ,  Motomu Kurata

发明人： Shunpei Yamazaki ,  Yuji Egi ,  Shinya Sasagawa ,  Motomu Kurata

IPC分类号： H01L29/04

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/78696

摘要： Off current of a thin film transistor is reduced, and on current of the thin film transistor is increased, and variation in electric characteristics is reduced. As a structure of semiconductor layers which form a channel formation region of a thin film transistor, a first semiconductor layer including a plurality of crystalline regions is provided on a gate insulating layer side; a second semiconductor layer having an amorphous structure is provided on a source region and drain region side; an insulating layer with a thickness small enough to allow carrier travel is provided between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer is in contact with the gate insulating layer. The second semiconductor layer is provided on an opposite side to a face of the first semiconductor layer which is in contact with the gate insulating layer.

摘要翻译： 薄膜晶体管的截止电流减小，薄膜晶体管的导通电流增大，电特性的变化也降低。 作为形成薄膜晶体管的沟道形成区域的半导体层的结构，在栅极绝缘层侧设置包括多个结晶区域的第一半导体层， 在源区和漏区侧设置具有非晶结构的第二半导体层; 在第一半导体层和第二半导体层之间设置具有足够小以允许载流子行进的厚度的绝缘层。 第一半导体层与栅极绝缘层接触。 第二半导体层设置在与栅极绝缘层接触的与第一半导体层的面相反的一侧。

公开(公告)号：US08138032B2

公开(公告)日：2012-03-20

申请号：US12423111

申请日：2009-04-14

申请人： Hidekazu Miyairi ,  Koji Dairiki ,  Yuji Egi ,  Yasuhiro Jinbo ,  Toshiyuki Isa

发明人： Hidekazu Miyairi ,  Koji Dairiki ,  Yuji Egi ,  Yasuhiro Jinbo ,  Toshiyuki Isa

IPC分类号： H01L29/04

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/78696

摘要： A thin film transistor includes, over a substrate having an insulating surface, a gate insulating layer covering a gate electrode; a semiconductor layer which includes a plurality of crystalline regions in an amorphous structure and which forms a channel formation region, in contact with the gate insulating layer; a semiconductor layer including an impurity element imparting one conductivity type, which forms source and drain regions; and a buffer layer including an amorphous semiconductor between the semiconductor layer and the semiconductor layer including an impurity element imparting one conductivity type. The crystalline regions have an inverted conical or inverted pyramidal crystal particle which grows approximately radially in a direction in which the semiconductor layer is deposited, from a position away from an interface between the gate insulating layer and the semiconductor layer.

摘要翻译： 薄膜晶体管包括在具有绝缘表面的衬底上，覆盖栅电极的栅绝缘层; 半导体层，其包括与所述栅极绝缘层接触的非晶结构中的多个结晶区域，并形成沟道形成区域; 包含赋予一种导电类型的杂质元素的半导体层，其形成源区和漏区; 以及包括在半导体层和半导体层之间的非晶半导体的缓冲层，其包括赋予一种导电类型的杂质元素。 晶体区域具有从远离栅极绝缘层和半导体层之间的界面的位置沿着沉积半导体层的方向大致径向生长的倒锥形或倒棱锥晶体颗粒。

公开(公告)号：US08119468B2

公开(公告)日：2012-02-21

申请号：US12423123

申请日：2009-04-14

申请人： Hidekazu Miyairi ,  Koji Dairiki ,  Yuji Egi ,  Yasuhiro Jinbo ,  Toshiyuki Isa

发明人： Hidekazu Miyairi ,  Koji Dairiki ,  Yuji Egi ,  Yasuhiro Jinbo ,  Toshiyuki Isa

IPC分类号： H01L21/00 ,  H01L29/786

CPC分类号： H01L27/1288 ,  C23C16/0272 ,  C23C16/24 ,  C23C16/4404 ,  H01L27/1214 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/78696

摘要： Disclosed is a thin film transistor which includes, over a substrate having an insulating surface, a gate insulating layer covering a gate electrode; a semiconductor layer which functions as a channel formation region; and a semiconductor layer including an impurity element imparting one conductivity type. The semiconductor layer exists in a state that a plurality of crystalline particles is dispersed in an amorphous silicon and that the crystalline particles have an inverted conical or inverted pyramidal shape. The crystalline particles grow approximately radially in a direction in which the semiconductor layer is deposited. Vertexes of the inverted conical or inverted pyramidal crystal particles are located apart from an interface between the gate insulating layer and the semiconductor layer.

摘要翻译： 公开了一种薄膜晶体管，其在具有绝缘表面的衬底上方包括覆盖栅电极的栅绝缘层; 用作沟道形成区域的半导体层; 以及包含赋予一种导电型的杂质元素的半导体层。 半导体层以多个结晶粒子分散在非晶硅中的状态存在，并且结晶粒子具有倒锥形或倒棱锥形状。 晶体颗粒沿半导体层沉积的方向大致径向生长。 倒锥形或倒锥形晶体颗粒的顶点位于与栅极绝缘层和半导体层之间的界面之外。