公开(公告)号：US4810664A

公开(公告)日：1989-03-07

申请号：US896560

申请日：1986-08-14

申请人： Theodore I. Kamins ,  Jean-Pierre Colinge ,  Paul J. Marcoux ,  Lynn M. Roylance ,  John L. Moll

发明人： Theodore I. Kamins ,  Jean-Pierre Colinge ,  Paul J. Marcoux ,  Lynn M. Roylance ,  John L. Moll

IPC分类号： H01L27/12 ,  H01L21/265 ,  H01L21/266 ,  H01L21/336 ,  H01L21/762 ,  H01L29/78 ,  H01L21/76

CPC分类号： H01L21/76264 ,  H01L21/26533 ,  H01L21/266 ,  H01L21/76267 ,  H01L21/76281

摘要： A method for producing buried oxide layers in selected portions of a semiconductor substrate including the steps of applying a patterned mask made from a high-density material over a semiconductor substrate and selectively forming buried oxide layers by oxygen ion implantation. The high-density material of the mask is preferably tungsten, but can also be made from other suitable materials such as silicon nitride. A MOS transistor is made by the process of the present invention by applying the high-density mask material over the gate of the transistor, and forming buried oxide layers by ion implantation beneath only the source region and drain region of the transistor. The completed MOS transistor has the characteristics of reduced drain and source capacitance, reduced leakage, and faster response, but does not suffer from the floating-body effect of MOS transistors made by SOI processes.

摘要翻译： 一种用于在半导体衬底的选定部分中制造掩埋氧化物层的方法，包括以下步骤：将由高密度材料制成的图案化掩模施加在半导体衬底上，并通过氧离子注入选择性地形成掩埋氧化物层。 掩模的高密度材料优选为钨，但也可以由其它合适的材料如氮化硅制成。 通过在晶体管的栅极上施加高密度掩模材料，并且通过仅在晶体管的源极区域和漏极区域下的离子注入形成掩埋氧化物层，通过本发明的方法制造MOS晶体管。 完成的MOS晶体管具有降低的漏极和源极电容，减少的泄漏和更快的响应特性，但不受SOI工艺制造的MOS晶体管的浮体效应。

公开(公告)号：US20140017571A1

公开(公告)日：2014-01-16

申请号：US13571272

申请日：2012-08-09

申请人： Vera Nicholaevna Lockett ,  Mark D. Lowenthal ,  Neil O. Shotton ,  William Johnstone Ray ,  Theodore I. Kamins

发明人： Vera Nicholaevna Lockett ,  Mark D. Lowenthal ,  Neil O. Shotton ,  William Johnstone Ray ,  Theodore I. Kamins

IPC分类号： H01M2/16 ,  H01G11/52

CPC分类号： H01G11/52 ,  H01G11/60 ,  H01G11/62 ,  H01G11/84 ,  H01M2/145 ,  H01M2/16 ,  H01M2/164 ,  H01M2/1646 ,  H01M2/1653 ,  H01M2/166 ,  H01M2/1686 ,  H01M10/0525 ,  H01M10/056 ,  H01M10/0565 ,  H01M10/0568 ,  H01M10/0569 ,  H01M2300/0025 ,  H01M2300/0028 ,  H01M2300/0085 ,  Y02E60/13

摘要： Representative embodiments provide a liquid or gel separator utilized to separate and space apart first and second conductors or electrodes of an energy storage device, such as a battery or a supercapacitor. A representative liquid or gel separator comprises a plurality of particles, typically having a size (in any dimension) between about 0.5 to about 50 microns; a first, ionic liquid electrolyte; and a polymer. In another representative embodiment, the plurality of particles comprise diatoms, diatomaceous frustules, and/or diatomaceous fragments or remains. Another representative embodiment further comprises a second electrolyte different from the first electrolyte; the plurality of particles are comprised of silicate glass; the first and second electrolytes comprise zinc tetrafluoroborate salt in 1-ethyl-3-methylimidalzolium tetrafluoroborate ionic liquid; and the polymer comprises polyvinyl alcohol (“PVA”) or polyvinylidene fluoride (“PVFD”). Additional components, such as additional electrolytes and solvents, may also be included.

摘要翻译： 代表性的实施例提供了用于分离和分开能量存储装置（例如电池或超级电容器）的第一和第二导体或电极的液体或凝胶分离器。 代表性的液体或凝胶分离器包括多个颗粒，通常具有在约0.5至约50微米之间的尺寸（任何尺寸）; 第一种离子液体电解质; 和聚合物。 在另一个代表性的实施方案中，多个颗粒包括硅藻，硅藻土锥形体和/或硅藻质碎片或残留物。 另一个代表性实施例还包括不同于第一电解质的第二电解质; 多个颗粒由硅酸盐玻璃组成; 第一和第二电解质包括在1-乙基-3-甲基咪唑鎓四氟硼酸盐离子液体中的四氟硼酸锌盐; 聚合物包括聚乙烯醇（“PVA”）或聚偏二氟乙烯（“PVFD”）。 还可以包括另外的组分，例如附加的电解质和溶剂。

公开(公告)号：US08389388B2

公开(公告)日：2013-03-05

申请号：US13258404

申请日：2009-04-30

申请人： Hans S. Cho ,  Theodore I. Kamins ,  Nathaniel J. Quitoriano

发明人： Hans S. Cho ,  Theodore I. Kamins ,  Nathaniel J. Quitoriano

IPC分类号： H01L21/20

CPC分类号： H01L31/182 ,  H01L31/0352 ,  Y02E10/546 ,  Y02P70/521

摘要： A photonic device (200) and method (100) of making the photonic device (200) employs preferential etching of grain boundaries of a polycrystalline semiconductor material layer (210). The method (100) includes growing (110) the polycrystalline layer (210) on a substrate (201). The polycrystalline layer includes a transition region (212) of variously oriented grains and a region (214) of columnar grain boundaries (215) adjacent to the transition region. The method further includes preferentially etching (120) the columnar grain boundaries to provide tapered structures (220) of the semiconductor material that are continuous (217) with respective aligned grains (213) of the transition region. The tapered structures are predominantly single crystal. The method further includes forming (140) a conformal semiconductor junction (240) on the tapered structures and providing (160) first and second electrodes. The first electrode (201, 262) is adjacent to the transition region and the second electrode (260) is adjacent to a surface layer of the conformal semiconductor junction.

摘要翻译： 制造光子器件（200）的光子器件（200）和方法（100）采用对多晶半导体材料层（210）的晶界的优先蚀刻。 方法（100）包括在衬底（201）上生长（110）多晶层（210）。 多晶层包括不同取向晶粒的过渡区域（212）和与过渡区域相邻的柱状晶界（215）的区域（214）。 该方法还包括优先蚀刻（120）柱状晶界以提供与过渡区域的相应对准晶粒（213）连续（217）的半导体材料的锥形结构（220）。 锥形结构主要是单晶。 该方法还包括在锥形结构上形成（140）共形半导体结（240）并提供（160）第一和第二电极。 第一电极（201,262）与过渡区域相邻，第二电极（260）与保形半导体结的表面层相邻。

公开(公告)号：US20130027776A1

公开(公告)日：2013-01-31

申请号：US13640348

申请日：2010-04-13

申请人： Wei Wu ,  R. Stanley Williams ,  Jingjing Li ,  Theodore I. Kamins ,  Marco Fiorentino

发明人： Wei Wu ,  R. Stanley Williams ,  Jingjing Li ,  Theodore I. Kamins ,  Marco Fiorentino

IPC分类号： G02B5/18 ,  B05D3/10 ,  B05D5/06

CPC分类号： G02B5/1809 ,  B05D5/06 ,  G02B5/18 ,  G02B5/1828 ,  G02B5/1861

摘要： A sub-wavelength grating device having controlled phase response includes a grating layer having line widths, line thicknesses, line periods, and line spacings selected to produce a first level of control in phase changes of different portions of a beam of light reflected from the grating layer. The device also includes a substrate affixed to the grating layer that produces a second level of control in phase changes of different portions of a beam of light reflected from the grating layer, the second level of control being accomplished abrupt stepping of the substrate in a horizontal dimension, ramping the substrate in a horizontal dimension, or changing the index of refraction in a horizontal dimension.

摘要翻译： 具有受控相位响应的亚波长光栅装置包括具有线宽，线厚度，线周期和线间隔的光栅层，其被选择以产生从光栅反射的光束的不同部分的相位变化中的第一级控制 层。 该装置还包括固定到光栅层的衬底，其产生从光栅层反射的光束的不同部分的相位变化的第二级控制，第二级控制是在水平方向上完成衬底的突然步进 尺寸，在水平尺寸上斜化基底，或改变水平尺寸的折射率。

公开(公告)号：US08203137B2

公开(公告)日：2012-06-19

申请号：US12501844

申请日：2009-07-13

申请人： Hans S. Cho ,  David A. Fattal ,  Theodore I. Kamins

发明人： Hans S. Cho ,  David A. Fattal ,  Theodore I. Kamins

IPC分类号： H01L29/06

CPC分类号： G02B6/1225 ,  B82Y20/00 ,  G02B1/005 ,  G02B6/136

摘要： A photonic structure includes a plurality of annealed, substantially smooth-surfaced ellipsoids arranged in a matrix. Additionally, a method of producing a photonic structure is provided. The method includes providing a semiconductor material, providing an etch mask comprising a two-dimensional hole array, and disposing the etch mask on at least one surface of the semiconductor material. The semiconductor material is then etched through the hole array of the etch mask to produce holes in the semiconductor material and thereafter applying a passivation layer to surfaces of the holes. Additionally, the method includes repeating the etching and passivation-layer application to produce a photonic crystal structure that contains ellipsoids within the semiconductor material and annealing the photonic crystal structure to smooth the surfaces of the ellipsoids.

摘要翻译： 光子结构包括排列成矩阵的多个退火的基本上平滑的表面的椭圆体。 另外，提供了一种制造光子结构的方法。 该方法包括提供半导体材料，提供包括二维孔阵列的蚀刻掩模，并将蚀刻掩模设置在半导体材料的至少一个表面上。 然后通过蚀刻掩模的孔阵列蚀刻半导体材料，以在半导体材料中产生孔，然后将钝化层施加到孔的表面。 此外，该方法包括重复蚀刻和钝化层应用以产生在半导体材料内包含椭圆体的光子晶体结构，并退火光子晶体结构以平滑椭圆体的表面。

公开(公告)号：US08039845B2

公开(公告)日：2011-10-18

申请号：US12228039

申请日：2008-08-08

申请人： Charles Santori ,  Sean Spillane ,  Marco Fiorentino ,  David Fattal ,  Raymond G. Beausoleil ,  Wei Wu ,  Theodore I. Kamins

发明人： Charles Santori ,  Sean Spillane ,  Marco Fiorentino ,  David Fattal ,  Raymond G. Beausoleil ,  Wei Wu ,  Theodore I. Kamins

IPC分类号： H01L29/66 ,  H01L21/00

CPC分类号： G02B6/122 ,  G02F2202/32

摘要： Various embodiments of the present invention are directed to methods for coupling semiconductor-based photonic devices to diamond. In one embodiment of the present invention, a photonic device is optically coupled with a diamond structure. The photonic device comprises a semiconductor material and is optically coupled with the diamond structure with an adhesive substance that adheres the photonic device to the diamond structure. A method for coupling the photonic device with the diamond structure is also provided. The method comprises: depositing a semiconductor material on the diamond structure; forming the photonic device in the semiconductor material so that the photonic device couples with the diamond structure; and adhering the photonic device to the diamond structure.

摘要翻译： 本发明的各种实施例涉及将基于半导体的光子器件耦合到金刚石的方法。 在本发明的一个实施例中，光子器件与金刚石结构光学耦合。 光子器件包括半导体材料，并与金刚石结构光学耦合，粘合剂物质将光子器件粘附到金刚石结构上。 还提供了一种用于将光子器件与金刚石结构耦合的方法。 该方法包括：在金刚石结构上沉积半导体材料; 在半导体材料中形成光子器件，使得光子器件与金刚石结构耦合; 并将光子器件粘附到金刚石结构上。

公开(公告)号：US08030729B2

公开(公告)日：2011-10-04

申请号：US12243804

申请日：2008-10-01

申请人： Nathaniel Quitoriano ,  Theodore I. Kamins

发明人： Nathaniel Quitoriano ,  Theodore I. Kamins

IPC分类号： H01L31/06

CPC分类号： H01L31/101 ,  H01L21/02573 ,  H01L21/02603 ,  H01L21/02617 ,  H01L21/02645 ,  H01L27/14647 ,  Y10S977/932 ,  Y10S977/95 ,  Y10S977/953

摘要： A device disclosed herein includes a first layer, a second layer, and a first plurality of nanowires established between the first layer and the second layer. The first plurality of nanowires is formed of a first semiconductor material. The device further includes a third layer, and a second plurality of nanowires established between the second and third layers. The second plurality of nanowires is formed of a second semiconductor material having a bandgap that is the same as or different from a bandgap of the first semiconductor material.

摘要翻译： 本文公开的装置包括在第一层和第二层之间建立的第一层，第二层和第一多个纳米线。 第一多个纳米线由第一半导体材料形成。 该装置还包括第二层和第三层之间建立的第三层和第二组纳米线。 第二多个纳米线由具有与第一半导体材料的带隙相同或不同的带隙的第二半导体材料形成。

公开(公告)号：US07989841B1

公开(公告)日：2011-08-02

申请号：US11831704

申请日：2007-07-31

申请人： Alexandre M. Bratkovski ,  Shih-Yuan Wang ,  Theodore I. Kamins

发明人： Alexandre M. Bratkovski ,  Shih-Yuan Wang ,  Theodore I. Kamins

IPC分类号： H01S5/00

CPC分类号： H01L31/1113

摘要： A fast injection optical switch is disclosed. The optical switch includes a thyristor having a plurality of layers including an outer doped layer and a switching layer. An area of the thyristor is configured to receive a light beam to be directed through at least one of the plurality of layers and exit the thyristor at a predetermined angle. At least two electrodes are coupled to the thyristor and configured to enable a voltage to be applied to facilitate carriers from the outer doped layer to be directed to the switching layer. Sufficient carriers can be directed to the switching layer to provide a change in refractive index of the switching layer to redirect at least a portion of the light beam to exit the thyristor at a deflection angle different from the predetermined angle.

摘要翻译： 公开了一种快速注入光开关。 光开关包括具有包括外掺杂层和开关层的多个层的晶闸管。 晶闸管的区域被配置为接收要被引导通过多个层中的至少一个层并且以预定角度离开晶闸管的光束。 至少两个电极耦合到晶闸管并且被配置为使得能够施加电压以便于来自外部掺杂层的载流子被引导到开关层。 足够的载体可以被引导到开关层，以提供开关层的折射率的变化，以使至少一部分光束以不同于预定角度的偏转角度离开晶闸管。

公开(公告)号：US07803698B2

公开(公告)日：2010-09-28

申请号：US11697818

申请日：2007-04-09

申请人： Theodore I. Kamins

发明人： Theodore I. Kamins

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： B82B3/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L2221/1094

摘要： A method for controlling catalyst nanoparticle positioning includes establishing a mask layer on a post such that a portion of a vertical surface of the post remains exposed. The method further includes establishing a catalyst nanoparticle material on the mask layer and directly adjacent at least a portion of the exposed portion of the vertical surface.

摘要翻译： 用于控制催化剂纳米颗粒定位的方法包括在柱上建立掩模层，使得柱的垂直表面的一部分保持暴露。 该方法还包括在掩模层上建立催化剂纳米颗粒材料并且直接邻近垂直表面的暴露部分的至少一部分。

公开(公告)号：US20100187572A1

公开(公告)日：2010-07-29

申请号：US12360079

申请日：2009-01-26

申请人： Hans S. Cho ,  Theodore I. Kamins

发明人： Hans S. Cho ,  Theodore I. Kamins

IPC分类号： H01L29/267 ,  H01L21/20

CPC分类号： H01L29/0657 ,  B81C1/00142 ,  B81C1/00158 ,  B81C2201/0116 ,  H01L21/0237 ,  H01L21/02521 ,  H01L21/02667 ,  H01L21/764

摘要： Methods of fabricating a suspended mono-crystalline structure use annealing to induce surface migration and cause a surface transformation to produce the suspended mono-crystalline structure above a cavity from a heteroepitaxial layer provided on a crystalline substrate. The methods include forming a three dimensional (3-D) structure in the heteroepitaxial layer where the 3-D structure includes high aspect ratio elements. The 3-D structure is annealed at a temperature below a melting point of the heteroepitaxial layer. The suspended mono-crystalline structure may be a portion of a semiconductor-on-nothing (SON) substrate.

摘要翻译： 制备悬浮的单晶结构的方法使用退火以诱导表面迁移并引起表面转变，从在提供于晶体衬底上的异质外延层的空腔上产生悬浮的单晶结构。 所述方法包括在异质外延层中形成三维（3-D）结构，其中3-D结构包括高纵横比元素。 3-D结构在异质外延层的熔点以下的温度下退火。 悬浮的单晶结构可以是无半导体（SON）衬底的一部分。