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    PHOTONIC STRUCTURE
    1.
    发明申请
    PHOTONIC STRUCTURE 有权
    光电结构

    公开(公告)号：US20110006284A1

    公开(公告)日：2011-01-13

    申请号：US12501844

    申请日：2009-07-13

    申请人： Hans S. Cho ,  David A. Fattal ,  Theodore I. Kamins

    发明人： Hans S. Cho ,  David A. Fattal ,  Theodore I. Kamins

    IPC分类号： H01L29/06 ,  H01L21/306

    CPC分类号： G02B6/1225 ,  B82Y20/00 ,  G02B1/005 ,  G02B6/136

    摘要： A photonic structure includes a plurality of annealed, substantially smooth-surfaced ellipsoids arranged in a matrix. Additionally, a method of producing a photonic structure is provided. The method includes providing a semiconductor material, providing an etch mask comprising a two-dimensional hole array, and disposing the etch mask on at least one surface of the semiconductor material. The semiconductor material is then etched through the hole array of the etch mask to produce holes in the semiconductor material and thereafter applying a passivation layer to surfaces of the holes. Additionally, the method includes repeating the etching and passivation-layer application to produce a photonic crystal structure that contains ellipsoids within the semiconductor material and annealing the photonic crystal structure to smooth the surfaces of the ellipsoids.

    摘要翻译： 光子结构包括排列成矩阵的多个退火的基本上平滑的表面的椭圆体。 另外，提供了一种制造光子结构的方法。 该方法包括提供半导体材料，提供包括二维孔阵列的蚀刻掩模，并将蚀刻掩模设置在半导体材料的至少一个表面上。 然后通过蚀刻掩模的孔阵列蚀刻半导体材料，以在半导体材料中产生孔，然后将钝化层施加到孔的表面。 此外，该方法包括重复蚀刻和钝化层应用以产生在半导体材料内包含椭圆体的光子晶体结构，并退火光子晶体结构以平滑椭圆体的表面。

    Plasmon-enhanced electromagnetic-radiation-emitting devices and methods for fabricating the same
    2.
    发明授权
    Plasmon-enhanced electromagnetic-radiation-emitting devices and methods for fabricating the same 有权
    等离子体增强型电磁辐射发射装置及其制造方法

    公开(公告)号：US07781853B2

    公开(公告)日：2010-08-24

    申请号：US11881266

    申请日：2007-07-26

    申请人： David A. Fattal ,  Nathaniel J. Quitoriano ,  Hans S. Cho ,  Marco Fiorentino ,  Theodore I. Kamins

    发明人： David A. Fattal ,  Nathaniel J. Quitoriano ,  Hans S. Cho ,  Marco Fiorentino ,  Theodore I. Kamins

    IPC分类号： H01L27/15 ,  H01L31/12 ,  H01L27/14 ,  H01L31/00

    CPC分类号： H01L33/20 ,  H01L33/18 ,  H01L33/24 ,  H01L33/382

    摘要： Various embodiments of the present invention are directed to surface-plasmon-enhanced electromagnetic-radiation-emitting devices and to methods of fabricating these devices. In one embodiment of the present invention, an electromagnetic-radiation-emitting device comprises a multilayer core, a metallic device layer, and a substrate. The multilayer core has an inner layer and an outer layer, wherein the outer layer is configured to surround at least a portion of the inner layer. The metallic device layer is configured to surround at least a portion of the outer layer. The substrate has a bottom conducting layer in electrical communication with the inner layer and a top conducting layer in electrical communication with the metallic device layer such that the exposed portion emits surface-plasmon-enhanced electromagnetic radiation when an appropriate voltage is applied between the bottom conducting layer and the top conducting layer.

    摘要翻译： 本发明的各种实施例涉及表面等离子体增强的电磁辐射发射装置以及制造这些装置的方法。 在本发明的一个实施例中，电磁辐射发射装置包括多层芯，金属器件层和衬底。 多层芯具有内层和外层，其中外层被构造成围绕内层的至少一部分。 金属器件层被配置为围绕外层的至少一部分。 衬底具有与内层电连通的底部导电层和与金属器件层电连通的顶部导电层，使得当在底部导电之间施加适当的电压时，暴露部分发射表面等离子体增强的电磁辐射 层和顶部导电层。

    Photonic structure
    3.
    发明授权
    Photonic structure 有权
    光子结构

    公开(公告)号：US08203137B2

    公开(公告)日：2012-06-19

    申请号：US12501844

    申请日：2009-07-13

    申请人： Hans S. Cho ,  David A. Fattal ,  Theodore I. Kamins

    发明人： Hans S. Cho ,  David A. Fattal ,  Theodore I. Kamins

    IPC分类号： H01L29/06

    CPC分类号： G02B6/1225 ,  B82Y20/00 ,  G02B1/005 ,  G02B6/136

    摘要： A photonic structure includes a plurality of annealed, substantially smooth-surfaced ellipsoids arranged in a matrix. Additionally, a method of producing a photonic structure is provided. The method includes providing a semiconductor material, providing an etch mask comprising a two-dimensional hole array, and disposing the etch mask on at least one surface of the semiconductor material. The semiconductor material is then etched through the hole array of the etch mask to produce holes in the semiconductor material and thereafter applying a passivation layer to surfaces of the holes. Additionally, the method includes repeating the etching and passivation-layer application to produce a photonic crystal structure that contains ellipsoids within the semiconductor material and annealing the photonic crystal structure to smooth the surfaces of the ellipsoids.

    摘要翻译： 光子结构包括排列成矩阵的多个退火的基本上平滑的表面的椭圆体。 另外，提供了一种制造光子结构的方法。 该方法包括提供半导体材料，提供包括二维孔阵列的蚀刻掩模，并将蚀刻掩模设置在半导体材料的至少一个表面上。 然后通过蚀刻掩模的孔阵列蚀刻半导体材料，以在半导体材料中产生孔，然后将钝化层施加到孔的表面。 此外，该方法包括重复蚀刻和钝化层应用以产生在半导体材料内包含椭圆体的光子晶体结构，并退火光子晶体结构以平滑椭圆体的表面。

    Plasmon-enhanced electromagnetic-radiation-emitting devices and methods for fabricating the same
    4.
    发明申请
    Plasmon-enhanced electromagnetic-radiation-emitting devices and methods for fabricating the same 有权
    等离子体增强型电磁辐射发射装置及其制造方法

    公开(公告)号：US20090028493A1

    公开(公告)日：2009-01-29

    申请号：US11881266

    申请日：2007-07-26

    申请人： David A. Fattal ,  Nathaniel J. Quitoriano ,  Hans S. Cho ,  Marco Fiorentino ,  Theodore I. Kamins

    发明人： David A. Fattal ,  Nathaniel J. Quitoriano ,  Hans S. Cho ,  Marco Fiorentino ,  Theodore I. Kamins

    IPC分类号： G02B6/12 ,  H01L33/00 ,  H01L21/00

    CPC分类号： H01L33/20 ,  H01L33/18 ,  H01L33/24 ,  H01L33/382

    摘要： Various embodiments of the present invention are directed to surface-plasmon-enhanced electromagnetic-radiation-emitting devices and to methods of fabricating these devices. In one embodiment of the present invention, an electromagnetic-radiation-emitting device comprises a multilayer core, a metallic device layer, and a substrate. The multilayer core has an inner layer and an outer layer, wherein the outer layer is configured to surround at least a portion of the inner layer. The metallic device layer is configured to surround at least a portion of the outer layer. The substrate has a bottom conducting layer in electrical communication with the inner layer and a top conducting layer in electrical communication with the metallic device layer such that the exposed portion emits surface-plasmon-enhanced electromagnetic radiation when an appropriate voltage is applied between the bottom conducting layer and the top conducting layer.

    摘要翻译： 本发明的各种实施例涉及表面等离子体增强的电磁辐射发射装置以及制造这些装置的方法。 在本发明的一个实施例中，电磁辐射发射装置包括多层芯，金属器件层和衬底。 多层芯具有内层和外层，其中外层被构造成围绕内层的至少一部分。 金属器件层被配置为围绕外层的至少一部分。 衬底具有与内层电连通的底部导电层和与金属器件层电连通的顶部导电层，使得当在底部导电之间施加适当的电压时，暴露部分发射表面等离子体增强的电磁辐射 层和顶部导电层。

    THERMOELECTRIC DEVICE
    10.
    发明申请
    THERMOELECTRIC DEVICE 审中-公开
    热电装置

    公开(公告)号：US20130000688A1

    公开(公告)日：2013-01-03

    申请号：US13387015

    申请日：2010-03-23

    申请人： Hans S. Cho ,  Alexandre M. Bratkovski ,  Theodore I. Kamins

    发明人： Hans S. Cho ,  Alexandre M. Bratkovski ,  Theodore I. Kamins

    IPC分类号： H01L35/28 ,  H01L35/34 ,  B82Y99/00

    CPC分类号： H01L35/32 ,  H01L35/34

    摘要： A thermoelectric device (100) includes a pair of spaced apart oppositely doped structures (110, 120) connecting between a common electrode (140) at a first end and different ones of a pair (150) of separate electrodes (150a, 150b) at a second end of the structures. Each oppositely doped structure includes a first material (112, 122) of a respectively doped semiconductor bounded by a second material (114, 124, 116, 126). Boundaries (111, 121) between the respective first and second materials are parallel to a charge carrier conduction path between the common electrode and the separate electrodes. The respectively doped semiconductor has a thickness configured to be less than a phonon scattering length.

    摘要翻译： 热电装置（100）包括一对间隔开的相对掺杂的结构（110,120），其连接在第一端的公共电极（140）和一对（150）分离电极（150a，150b）中的不同电极 结构的第二端。 每个相对掺杂的结构包括由第二材料（114,124,116,126）界定的分别掺杂的半导体的第一材料（112,122）。 各个第一和第二材料之间的边界（111,121）平行于公共电极和单独电极之间的电荷载流子传导路径。 分别掺杂的半导体具有被配置为小于声子散射长度的厚度。