摘要:
Even if a mattress or the like suffers long-term deterioration, a sleep state measuring apparatus is provided which can set a suitable amplification factor A of a biosignal. The sleep state measuring apparatus detects the biosignal which changes depending on the sleep state of a person who gets on the mattress filled with water, amplifies and estimates the sleep state based on the biosignal. A static component P of the mattress internal pressure is detected by the biosignal sensor is first obtained (S11). The mattress internal pressure is the pressure of water in the mattress. From the static component P of the mattress internal pressure, a fluctuation part ΔV of the mattress internal pressure depending on the value is specified (S12). Each value of the fluctuation part ΔV of the mattress internal pressure is obtained beforehand by applying a predetermined load, and changing the static component P of the mattress internal pressure. The above-described amplification factor A is calculated by correcting predetermined standard amplification factor A0 with the specified fluctuation part ΔV (S13).
摘要:
Disclosed is a sleep stage determination apparatus which comprises respiratory-signal detection means for detecting a variation of a respiratory signal from the body of a human subject, and sleep-stage determination means for determining a plurality of sleep stages using only the respiratory-signal variation. The sleep stage determination apparatus of the present invention can eliminate the need for detecting a plurality of biological signals and have simplified sensor and circuit configurations designed to detect only the respiratory signal variation which is relatively easily detectable. This makes it possible to reduce a detection error and achieve enhanced determination accuracy or creditability.
摘要:
A liquid ejection head can eject very fine droplets of the order of sub-picoliter. The liquid ejection head is provided with an ejection port 3 for ejecting liquid as liquid droplets and comprises an energy generating element 1 arranged vis-à-vis the ejection port 3 to generate ejection energy to be applied to the liquid. No head-constituting member exists in the space formed by translating the area of the energy generating element 1 toward the ejection port 3. The meniscus surface of said ejection port receives an impact energy from the energy generating element. With this arrangement, droplets of the liquid is ejected from the central part of the meniscus surface having an area smaller than the meniscus surface so that they break the meniscus section at or near the central part thereof.
摘要:
In a method and a system for forming a copper thin film in which a raw material gas is introduced into a substrate processing chamber storing a substrate and being under a reduced pressure to form a copper thin film on the substrate, an addition gas is introduced into the substrate processing chamber in addition to the raw material gas at the initial stage of deposition. Thereafter, the introduction of the addition gas is stopped, while the introduction of the raw material gas is continued. Alternatively, an addition gas is introduced into the substrate processing chamber before the start of the deposition process, and the addition gas is introduced into the substrate processing chamber in addition to the raw material gas at the initial stage of deposition. Thereafter, the introduction of the addition gas is stopped, while the introduction of the raw material gas is continued.
摘要:
An n layer, an i layer and a p layer are laminated, in that order, in a non-single-crystal thin film solar cell. The n layer, a part of the n layer, or the n layer and part of the i layer, is formed at a low substrate temperature T1. The i layer and the p layer; the residual n layer, i layer and p layer; or the residual i layer and p layer, are formed at a higher substrate temperature T2 than T1. More particularly, T1 is between about 70° C. and 120° C., and T2 is between about 120° C. and 450° C.
摘要:
The film thickness of a p-type semiconductor was adjusted in order to achieve 0.85-0.99 times the maximum pre-irradiation open-circuit voltage. In order to achieve 0.85-0.99 times the maximum pre-irradiation open-circuit voltage, it was also shown to be favorable to control acceptor impurity levels in p-type semiconductors. Irradiation conditions of more than 10 hours at 1 SUN or (light intensity [SUN])2×10 or more (time [h])>10 were utilized.
摘要:
A monolith-holding element adapted to be used in an exhaust system of internal combustion engines, a process for producing the monolith-holding element, a catalytic converter and a process for producing the catalytic converter are disclosed, in which the specific monolith-holding element is produced by uniformly dispersing an organic binder in a compressed alumina fiber mat, exhibits a thickness-restoring property when the organic binder is thermally decomposed by the contact with a high-temperature exhaust gases, and supports a monolith by exerting a surface pressure on an outer peripheral surface of the monolith and an inner peripheral surface of the metal casing. The monolith-holding element has an excellent durability and gas-sealing properties and the catalytic converter can withstand severe vibration and impact for a long period of time.