摘要:
Disclosed is a selective etching method of a polyimide type resin film which uses an etching mask consisting of a negative type photoresist material prepared by adding a photosensitive reagent to an unsaturated ketone polymer such as polymethylisopropenylketone as the base resin and an etching solution consisting of 20 to 40% by volume of hydrazine hydrate and the balance of a polyamine. The etching method of the present invention can provide the pattern of the polyimide type resin film having high dimensional accuracy by wet etching.
摘要:
A photosensitive composition comprising an azide compound represented by the formula: ##STR1## wherein each of X and Y is an aromatic substituent group, at least one of X and Y being an aromatic substituent group having an azide group, and n and m are zeros or integers of 1, and a polymeric compound. Since this composition has high resolution and is photosensitive to light having a wavelength of 436 nm, it permits employment of a reduction projection printer and is suitable for fabrication of semiconductor devices.
摘要:
A method for forming radiation images by using a polymeric compound having in the molecule a plurality of epoxy groups and a plurality of bromine atoms. The polymeric compound has a high radiation sensitivity and high contrast.
摘要:
This invention relates to light sensitive photoresist materials which are used in the photo-engraving process or in the production of the phosphor screens of color picture tubes. The light sensitive photoresist materials of this invention are novel, water-soluble azide materials.