公开(公告)号：US07385021B2

公开(公告)日：2008-06-10

申请号：US11148161

申请日：2005-06-09

申请人： Yoshitaka Hamada ,  Tsutomu Ogihara ,  Motoaki Iwabuchi ,  Takeshi Asano ,  Takafumi Ueda

发明人： Yoshitaka Hamada ,  Tsutomu Ogihara ,  Motoaki Iwabuchi ,  Takeshi Asano ,  Takafumi Ueda

IPC分类号： C08G77/08

CPC分类号： G03F7/0752 ,  C08K5/0025 ,  C08L83/06 ,  G03F7/091 ,  G03F7/11 ,  C08L2666/28

摘要： A sacrificial film-forming composition is provided comprising (A) an organofunctional silicone resin which is a co-hydrolytic condensate of hydrolyzable silanes having formula (1) and formula (2) and/or (3): X—Y—SiZ3   (1) RnSiZ4-n   (2) P—SiZ3   (3) wherein Z is a hydrolyzable group, X is a crosslinkable organofunctional group, Y is a single bond or a divalent hydrocarbon group, R is hydrogen or a monovalent hydrocarbon group, n is an integer of 0-3, and P is a substituent group which readily decomposes and volatilizes upon thermal decomposition, (B) a crosslinking agent, (C) an acid generator, (D) an extender or porogen, and (E) an organic solvent. The composition has improved storage stability, filling properties, adhesion and coating uniformity sufficient to form a sacrificial film which is effectively dissolvable in a stripping solution.

摘要翻译： 提供了牺牲成膜组合物，其包含（A）有机官能有机硅树脂，其为具有式（1）和式（2）和/或（3）的可水解硅烷的共水解缩合物：<β直列式 描述=“在线公式”end =“lead”？> XY-SiZ 3（1）<？in-line-formula description =“In-line Formulas”end =“tail”？ > <？in-line-formula description =“In-line Formulas”end =“lead”？> R SiZ 4-n（2） line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> P-SiZ <3 >（3）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中Z是可水解基团，X是可交联的有机官能团，Y是单键或二价烃基 ，R为氢或一价烃基，n为0-3的整数，P为在热分解时容易分解挥发的取代基，（B）交联剂，（C）aci （D）增量剂或致孔剂，和（E）有机溶剂。 该组合物具有提高的储存稳定性，填充性能，粘附性和涂层均匀性，足以形成有效地溶解在剥离溶液中的牺牲膜。

公开(公告)号：US20080026322A1

公开(公告)日：2008-01-31

申请号：US11808100

申请日：2007-06-06

申请人： Tsutomu Ogihara ,  Takafumi Ueda ,  Takeshi Asano ,  Motoaki Iwabuchi

发明人： Tsutomu Ogihara ,  Takafumi Ueda ,  Takeshi Asano ,  Motoaki Iwabuchi

IPC分类号： G03C1/00

CPC分类号： C08G77/08 ,  C08L83/04 ,  C09D183/04 ,  G03F7/094 ,  G03F7/11 ,  C08L83/00

摘要： A silicon-containing film is formed from a heat curable composition comprising (A-1) a silicon-containing compound obtained by effecting hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst and removing the acid catalyst, (A-2) a silicon-containing compound obtained by effecting hydrolytic condensation of a hydrolyzable silicon compound in the presence of a basic catalyst and removing the basic catalyst, (B) a hydroxide or organic acid salt of lithium, sodium, potassium, rubidium or cesium, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, and (D) an organic solvent. The silicon-containing film allows an overlying photoresist film to be patterned effectively.

摘要翻译： 由含有（A-1）在酸催化剂存在下进行可水解硅化合物的水解缩合得到的含硅化合物和除去酸催化剂（A-2）的热固性组合物形成含硅膜 ）通过在碱性催化剂的存在下进行可水解硅化合物的水解缩合而除去碱性催化剂得到的含硅化合物，（B）锂，钠，钾，铷或铯的氢氧化物或有机酸盐，或 锍，碘或铵化合物，（C）有机酸和（D）有机溶剂。 含硅膜允许覆盖的光致抗蚀剂膜被有效地图案化。

公开(公告)号：US07303785B2

公开(公告)日：2007-12-04

申请号：US10859531

申请日：2004-06-02

申请人： Tsutomu Ogihara ,  Takeshi Asano ,  Motoaki Iwabuchi ,  Fujio Yagihashi

发明人： Tsutomu Ogihara ,  Takeshi Asano ,  Motoaki Iwabuchi ,  Fujio Yagihashi

IPC分类号： B05D3/02 ,  C08G77/16

CPC分类号： C09D183/04 ,  G03F7/0757 ,  G03F7/091 ,  H01L21/0276 ,  Y10T428/31663

摘要： It is an object of the present invention to provide a material for an antireflective film that has high etching selectivity with respect to the resist, that is, that has a faster etching speed than the resist, a pattern formation method for forming an antireflective film layer on a substrate using this antireflective film material, and a pattern formation method using this antireflective film as a hard mask for substrate processing. The present invention provides a silicone resin for preventing reflection comprising an organic group comprising a carbon-oxygen single bond and/or a carbon-oxygen double bond; a light-absorbing group; and a silicon atom whose terminal end or ends are Si—OH and/or Si—OR. It also provides an antireflective film material comprising this silicone resin (A) for preventing reflection film, an organic solvent (B) and an acid generator (C).

摘要翻译： 本发明的目的是提供一种抗蚀剂材料，该防反射膜相对于抗蚀剂具有高蚀刻选择性，即具有比抗蚀剂更快的蚀刻速度，用于形成抗反射膜层的图案形成方法 在使用该防反射膜材料的基板上，使用该抗反射膜作为基板处理的硬掩模的图案形成方法。 本发明提供一种防止反射的硅树脂，其包含含有碳 - 氧单键和/或碳 - 氧双键的有机基团; 光吸收组; 以及其末端或末端为Si-OH和/或Si-OR的硅原子。 还提供一种抗反射膜材料，其包含用于防止反射膜的有机硅树脂（A），有机溶剂（B）和酸产生剂（C）。

公开(公告)号：US20070135565A1

公开(公告)日：2007-06-14

申请号：US11549731

申请日：2006-10-16

申请人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Asano ,  Motoaki Iwabuchi ,  Hideo Nakagawa ,  Masaru Sasago

发明人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Asano ,  Motoaki Iwabuchi ,  Hideo Nakagawa ,  Masaru Sasago

IPC分类号： C08L83/04

CPC分类号： C09D183/14 ,  C08G77/08 ,  C08K5/19 ,  C09D183/04 ,  C23C18/1212 ,  C23C18/122 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31695 ,  Y10T428/31663

摘要： Provided are a composition for forming film which can form porous film excelling in dielectric constant, adhesiveness, uniformity of the film, mechanical strength and having low hygroscopicity; porous film and a method for forming the film; and a high-performing and highly reliable semiconductor device comprising the porous film inside. More specifically, provided is a composition for forming porous film, the composition comprising siloxane polymer and one or more quaternary ammonium salts represented by following formula (1) or (2): [(R1)4N]+[R2X]−  (1) Hk[(R1)4N]m+Yn−  (2) wherein X represents CO2, OSO3 or SO3; Y represents SO4, SO3, CO3, O2C—CO2, NO3 or NO2; and k is 0 or 1, m is 1 or 2 and n is 1 or 2 in proviso that n=1 requires k=0 and m=1, and n=2 requires k=0 and m=2, or k=1 and m=1.

摘要翻译： 提供一种形成膜的组合物，其可以形成介电常数，粘合性，膜均匀性，机械强度和吸湿性低的多孔膜; 多孔膜和形成膜的方法; 以及内部具有多孔膜的高性能，高可靠性的半导体装置。 更具体地说，提供了一种用于形成多孔膜的组合物，该组合物包含硅氧烷聚合物和一种或多种由下式（1）或（2）表示的季铵盐：<？在线公式描述=“在线式 “end =”lead“？> [（R＆lt; 1＆lt; 1＆gt;）＆lt; 4＆lt; N＆gt;＆lt; （1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end = “铅”？> k k k>>>>>> / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / （2）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中X表示CO 2 2， OSO 3或SO 3 3; Y表示SO 4，SO 3，CO 3，O 2，CO 2， 3，NO 3或NO 2; 并且k为0或1，m为1或2，n为1或2，条件是n = 1需要k = 0且m = 1，n = 2需要k = 0且m = 2，或k = 1 m = 1。

公开(公告)号：US20070134916A1

公开(公告)日：2007-06-14

申请号：US11636647

申请日：2006-12-11

申请人： Motoaki Iwabuchi ,  Tsutomu Ogihara ,  Takeshi Asano ,  Takafumi Ueda

发明人： Motoaki Iwabuchi ,  Tsutomu Ogihara ,  Takeshi Asano ,  Takafumi Ueda

IPC分类号： H01L21/4763 ,  H01L21/44 ,  H01L21/302

CPC分类号： G03F7/0752 ,  C08K3/22 ,  C09D183/14 ,  G03F7/091 ,  C08L83/04

摘要： There is disclosed an antireflection film composition for forming an intermediate resist film of a multilayer resist film used in lithography comprising: at least a polymer obtained by reacting a chelating agent with a polymer having a repeating unit represented by the following general formula (1); an organic solvent; and an acid generator. There can be provided a novel antireflection film composition that exhibits high etch selection ratio to a photoresist film, that forms a dense inorganic film, whereby an excellent pattern can be formed on the overlying photoresist film, that can be removed with wet stripping, that exhibits high preservation stability and high dry etching resistance when an underlying layer is etched, and that is suitable for forming an intermediate resist film of a multilayer resist film; a patterning process in which an antireflection film is formed over a substrate by using the antireflection film composition; and a substrate having the antireflection film as an intermediate resist film.

摘要翻译： 公开了一种用于形成用于光刻的多层抗蚀剂膜的中间抗蚀剂膜的抗反射膜组合物，其包含：至少一种通过使螯合剂与具有由以下通式（1）表示的重复单元的聚合物反应获得的聚合物; 有机溶剂; 和酸发生剂。 可以提供一种新颖的抗反射膜组合物，其对光致抗蚀剂膜显示出高的蚀刻选择比，形成致密的无机膜，由此可以在可以用湿剥离除去的上覆的光致抗蚀剂膜上形成优异的图案， 当蚀刻下面的层时，具有高的保存稳定性和高的耐干蚀刻性，并且适用于形成多层抗蚀剂膜的中间抗蚀剂膜; 通过使用防反射膜组合物在基板上形成抗反射膜的图案化工艺; 以及具有抗反射膜作为中间抗蚀剂膜的基板。

公开(公告)号：US20070117252A1

公开(公告)日：2007-05-24

申请号：US11595941

申请日：2006-11-13

申请人： Tsutomu Ogihara ,  Motoaki Iwabuchi ,  Takeshi Asano ,  Takafumi Ueda

发明人： Tsutomu Ogihara ,  Motoaki Iwabuchi ,  Takeshi Asano ,  Takafumi Ueda

IPC分类号： H01L21/00 ,  H01L21/31

CPC分类号： C08G77/48 ,  C09D183/14 ,  G03F7/091

摘要： A composition for forming an antireflective coating for use in a photolithography process using exposure light of up to 200 nm comprises a silicon-containing polymer obtained through hydrolytic condensation of a silicon-silicon bond-containing silane compound having formula: R(6-m)Si2Xm wherein R is a monovalent hydrocarbon group, X is alkoxy, alkanoyloxy or halogen, and m is 3 to 6. The composition allows the overlying photoresist film to be patterned to a satisfactory profile and has a high etching selectivity relative to organic material so that a substrate can be processed at a high accuracy.

摘要翻译： 用于形成使用高达200nm的曝光光的光刻工艺中的抗反射涂层的组合物包括通过具有下式的含硅 - 硅键的硅烷化合物的水解缩合获得的含硅聚合物：R（6 -m）其中R是一价烃基，X是烷氧基，烷酰氧基或卤素，m是3至6.组成 允许上覆的光致抗蚀剂膜被图案化以令人满意的轮廓，并且相对于有机材料具有高的蚀刻选择性，使得可以高精度地加工基底。

公开(公告)号：US20070117044A1

公开(公告)日：2007-05-24

申请号：US11594176

申请日：2006-11-08

申请人： Tsutomu Ogihara ,  Takeshi Asano ,  Motoaki Iwabuchi ,  Takafumi Ueda

发明人： Tsutomu Ogihara ,  Takeshi Asano ,  Motoaki Iwabuchi ,  Takafumi Ueda

IPC分类号： G03C1/00

CPC分类号： G03F7/0752 ,  G03F7/0757 ,  G03F7/094 ,  G03F7/11 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/115 ,  Y10S430/12 ,  Y10S430/122

摘要： A multilayer resist process comprises forming in sequence an undercoat film, an intermediate film, and a photoresist film on a patternable substrate, and effecting etching in multiple stages. A silicon-containing film forming composition is useful in forming the intermediate film serving as an etching mask, comprising a silicon-containing polymer obtained through hydrolytic condensation of at least one Si—Si bond-containing silane compound having formula: R(6-m)Si2Xm wherein R is a monovalent hydrocarbon group, X is alkoxy, alkanoyloxy or halogen, and m is 3 to 6. The composition allows the overlying photoresist film to be patterned to a satisfactory profile and has a high etching selectivity relative to organic materials.

摘要翻译： 多层抗蚀剂工艺包括在可图案化衬底上依次形成底涂层，中间膜和光致抗蚀剂膜，并且在多个阶段中进行蚀刻。 含硅成膜组合物可用于形成用作蚀刻掩模的中间膜，该中间膜包含通过至少一种含Si-Si键的硅烷化合物的水解缩合得到的含硅聚合物，其具有下式：R 6-m）其中R是一价烃基，X是烷氧基，烷酰氧基或卤素，m是3至6。 组合物允许将上覆的光致抗蚀剂膜图案化为令人满意的轮廓，并且相对于有机材料具有高蚀刻选择性。

公开(公告)号：US07132473B2

公开(公告)日：2006-11-07

申请号：US10706862

申请日：2003-11-12

申请人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Asano ,  Motoaki Iwabuchi ,  Hideo Nakagawa ,  Masaru Sasago

发明人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Asano ,  Motoaki Iwabuchi ,  Hideo Nakagawa ,  Masaru Sasago

IPC分类号： C08G77/04 ,  C09D183/04

CPC分类号： C09D183/14 ,  C08G77/08 ,  C08K5/19 ,  C09D183/04 ,  C23C18/1212 ,  C23C18/122 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31695 ,  Y10T428/31663

摘要： Provided are a composition for forming film which can form porous film excelling in dielectric constant, adhesiveness, uniformity of the film, mechanical strength and having low hygroscopicity; porous film and a method for forming the film; and a high-performing and highly reliable semiconductor device comprising the porous film inside. More specifically, provided is a composition for forming porous film, the composition comprising siloxane polymer and one or more quaternary ammonium salts represented by following formula (1) or (2): [(R1)4N]+[R2X]−  (1) Hk[(R1)4N]m+YV−  (2) wherein X represents CO2, OSO3 or SO3; Y represents SO4, SO3, CO3, O2C—CO2, NO3 or NO2; and k is 0 or 1, m is 1 or 2 and n is 1 or 2 in proviso that n=1 requires k=0 and m=1, and n=2 requires k=0 and m=2, or k=1 and m=1.

摘要翻译： 提供一种形成膜的组合物，其可以形成介电常数，粘合性，膜均匀性，机械强度和吸湿性低的多孔膜; 多孔膜和形成膜的方法; 以及内部具有多孔膜的高性能，高可靠性的半导体装置。 更具体地说，提供了一种用于形成多孔膜的组合物，该组合物包含硅氧烷聚合物和一种或多种由下式（1）或（2）表示的季铵盐：<？在线公式描述=“在线式 “end =”lead“？> [（R＆lt; 1＆lt; 1＆gt;）＆lt; 4＆lt; N＆gt;＆lt; （1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end = “铅”？> k k k>>>>>> / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / （2）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中X表示CO 2， OSO 3或SO 3 3; Y表示SO 4，SO 3，CO 3，O 2，CO 2， 3，NO 3或NO 2; 并且k为0或1，m为1或2，n为1或2，条件是n = 1需要k = 0且m = 1，n = 2需要k = 0且m = 2或k = 1 m = 1。

公开(公告)号：US20050277756A1

公开(公告)日：2005-12-15

申请号：US11148371

申请日：2005-06-09

申请人： Motoaki Iwabuchi ,  Yoshitaka Hamada ,  Tsutomu Ogihara ,  Takeshi Asano ,  Takafumi Ueda

发明人： Motoaki Iwabuchi ,  Yoshitaka Hamada ,  Tsutomu Ogihara ,  Takeshi Asano ,  Takafumi Ueda

IPC分类号： G03F7/11 ,  C08G77/14 ,  C08G77/26 ,  C08K5/00 ,  C08L83/04 ,  C09D183/02 ,  C09D183/04 ,  G03F7/40 ,  H01L21/027 ,  H01L21/312

CPC分类号： C08G77/04 ,  C08G77/08 ,  C08G77/14 ,  C09D183/04 ,  C09D183/06 ,  G03F7/0757 ,  H01L21/02123 ,  H01L21/02211 ,  H01L21/02282 ,  H01L21/0276 ,  H01L21/31144 ,  H01L21/3121 ,  H01L21/76808

摘要： A porous film-forming composition is provided comprising (A) a polymer obtained by hydrolytic condensation of a hydrolyzable silane having formula (1): R1n—Si—R24-n   (1) wherein R1 is a monovalent organic group or hydrogen, R2 is a hydrolyzable group or a hydroxyl group and n is an integer of 0 to 3, a hydrolyzate thereof or a partial condensate thereof, with the proviso that at least one silicon compound having an organic crosslinkable group as R1 is included, the polymer being capable of crosslinking reaction by the organic crosslinkable group, and (B) an organic solvent. The composition has improved storage stability, filling properties, adhesion and coating uniformity sufficient to form a sacrificial film which is dissolvable in a stripping solution.

摘要翻译： 提供了一种多孔成膜组合物，其包含（A）通过具有式（1）的可水解硅烷的水解缩合得到的聚合物：<？in-line-formula description =“In-line Formulas”end =“lead” （1）<β在线公式描述中的一个或多个（1） 其中R 1是一价有机基团或氢，R 2是可水解基团或羟基，并且其中R 1是一价有机基团或氢原子， n为0〜3的整数，其水解物或其部分缩合物，条件是含有至少一种具有有机交联基团的硅化合物为R 1，所述聚合物能够 通过有机交联基团进行交联反应，和（B）有机溶剂。 该组合物具有提高的储存稳定性，填充性能，粘合性和涂层均匀性，足以形成可溶于剥离溶液中的牺牲膜。

公开(公告)号：US20050277755A1

公开(公告)日：2005-12-15

申请号：US11148161

申请日：2005-06-09

申请人： Yoshitaka Hamada ,  Tsutomu Ogihara ,  Motoaki Iwabuchi ,  Takeshi Asano ,  Takafumi Ueda

发明人： Yoshitaka Hamada ,  Tsutomu Ogihara ,  Motoaki Iwabuchi ,  Takeshi Asano ,  Takafumi Ueda

IPC分类号： G03F7/11 ,  C08G77/00 ,  C08G77/14

CPC分类号： G03F7/0752 ,  C08K5/0025 ,  C08L83/06 ,  G03F7/091 ,  G03F7/11 ,  C08L2666/28

摘要： A sacrificial film-forming composition is provided comprising (A) an organofunctional silicone resin which is a co-hydrolytic condensate of hydrolyzable silanes having formula (1) and formula (2) and/or (3): X—Y—SiZ3  (1) RnSiZ4-n  (2) P—SiZ3  (3) wherein Z is a hydrolyzable group, X is a crosslinkable organofunctional group, Y is a single bond or a divalent hydrocarbon group, R is hydrogen or a monovalent hydrocarbon group, n is an integer of 0-3, and P is a substituent group which readily decomposes and volatilizes upon thermal decomposition, (B) a crosslinking agent, (C) an acid generator, (D) an extender or porogen, and (E) an organic solvent. The composition has improved storage stability, filling properties, adhesion and coating uniformity sufficient to form a sacrificial film which is effectively dissolvable in a stripping solution.

摘要翻译： 提供了牺牲成膜组合物，其包含（A）有机官能有机硅树脂，其为具有式（1）和式（2）和/或（3）的可水解硅烷的共水解缩合物：<β直列式 描述=“在线公式”end =“lead”？> XY-SiZ 3（1）<？in-line-formula description =“In-line Formulas”end =“tail”？ > <？in-line-formula description =“In-line Formulas”end =“lead”？> R SiZ 4-n（2） line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> P-SiZ <3 >（3）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中Z是可水解基团，X是可交联的有机官能团，Y是单键或二价烃基 R为氢或一价烃基，n为0-3的整数，P为热分解时容易分解挥发的取代基，（B）交联剂，（C） 酸发生剂，（D）增量剂或致孔剂，和（E）有机溶剂。 该组合物具有提高的储存稳定性，填充性能，粘附性和涂层均匀性，足以形成有效地溶解在剥离溶液中的牺牲膜。