公开(公告)号：US07437926B2

公开(公告)日：2008-10-21

申请号：US11758292

申请日：2007-06-05

申请人： Masayuki Kozawa ,  Makoto Iida ,  Akio Yasukawa ,  Mari Hikota ,  Takahiro Miki

发明人： Masayuki Kozawa ,  Makoto Iida ,  Akio Yasukawa ,  Mari Hikota ,  Takahiro Miki

IPC分类号： G01F1/68

CPC分类号： G01F1/6842 ,  G01F15/00 ,  G01F15/18

摘要： An air flow rate measuring device is provided in which a pressure loss across a grid therein due to the load which is generated when a hose band is tightened is reduced and deterioration of its measurement accuracy due to the grid deformation is prevented. The grid is configured to have a grid portion which absorbs deformation at the outer periphery thereof, and another grid portion which does not absorb deformation at the inner periphery thereof. In order to make the grid portions independent of each other, the grid is provided with a frame, and the mesh grid inside of the frame which maintains a rectifying effect, prevents the deterioration of the measurement accuracy, and does not absorb deformation, and the grid outside of the frame absorbs deformation.

摘要翻译： 提供了一种空气流量测量装置，其中由于在软管带被紧固时产生的负载而在其内的电网的压力损失减少，并且防止了由于电网变形引起的其测量精度的劣化。 格栅被构造为具有能够吸收其外周的变形的栅格部，以及在其内周不吸收变形的另一格栅部。 为了使栅格部分彼此独立，栅格设置有框架，并且框架内部的网格保持整流效果，防止测量精度的劣化，并且不会吸收变形，并且 框架外部的网格吸收变形。

公开(公告)号：US07323048B2

公开(公告)日：2008-01-29

申请号：US10561205

申请日：2004-05-28

申请人： Masahiro Sakurada ,  Makoto Iida ,  Nobuaki Mitamura ,  Atsushi Ozaki

发明人： Masahiro Sakurada ,  Makoto Iida ,  Nobuaki Mitamura ,  Atsushi Ozaki

IPC分类号： C30B15/20

CPC分类号： C30B29/06 ,  C30B15/203

摘要： A method for producing a single crystal in which when the single crystal is grown by Czochralski method, V/G is controlled by controlling a fluctuation of a temperature gradient G of the crystal which is being pulled without lowering a pulling rate V, thereby the single crystal including a desired defect region over a whole plane in a radial direction of the crystal entirely in a direction of the crystal growth axis can be produced effectively for a short time at a high yield.

摘要翻译： 一种单晶的制造方法，其中，当通过Czochralski法生长单晶时，通过控制正在拉动的晶体的温度梯度G的波动来控制V / G，而不降低拉伸速率V，从而单 可以在晶体生长轴方向上在整个晶体的径向方向上的整个平面上包括期望的缺陷区域的产物在短时间内以高产率有效地产生。

公开(公告)号：US20070243695A1

公开(公告)日：2007-10-18

申请号：US10586476

申请日：2005-01-20

申请人： Makoto Iida

发明人： Makoto Iida

IPC分类号： H01L21/02

CPC分类号： C30B29/06 ,  B28D5/022 ,  B28D5/04 ,  C30B33/00 ,  Y10T117/1004

摘要： A method for producing semiconductor wafers, from a semiconductor ingot, wherein an oxygen concentration distribution in the growth axis direction is measured in the ingot state (F2), a position at which the oxygen concentration is maximum or minimum in a range of a predetermined length is determined as a cut position according to the measurement results (F3), the ingot is cut in a perpendicular direction to the growth axis at the cut position into blocks each having the oxygen concentrations being maximum and minimum at both ends thereof (F4), each of the blocks is sliced, and thereby semiconductor wafers are produced. Thereby, there can be provided a technique by which when semiconductor wafers are produced from a semiconductor ingot, wafers having oxygen concentration being in a predetermined standard range can be certainly produced.

摘要翻译： 一种半导体晶片的制造方法，其特征在于，在锭状态（F 2）中测量生长轴方向的氧浓度分布，在规定的范围内氧浓度最大或最小的位置 根据测量结果（F 3）将长度确定为切割位置，将锭在切割位置沿垂直于生长轴的方向切割成两端的氧浓度最大和最小的块（F 4），对每个块进行切片，从而制造半导体晶片。 因此，可以提供一种通过半导体晶片制造半导体晶片的技术，可以可靠地制造氧浓度在规定标准范围内的晶片。

公开(公告)号：US20070158653A1

公开(公告)日：2007-07-12

申请号：US10586953

申请日：2005-01-24

申请人： Makoto Iida ,  Toshihiko Imai ,  Katsuichi Sato ,  Miho Iwabuchi ,  Masahiro Kato

发明人： Makoto Iida ,  Toshihiko Imai ,  Katsuichi Sato ,  Miho Iwabuchi ,  Masahiro Kato

IPC分类号： H01L29/04 ,  H01L21/84

CPC分类号： C30B29/06 ,  C30B15/00 ,  C30B15/10

摘要： The present invention is a silicon single crystal grown by CZ method, wherein Cu precipitates do not exist inside the silicon single crystal, a silicon wafer produced from the silicon single crystal, wherein Cu precipitates do not exist on a surface of and inside the wafer, and an apparatus for producing a silicon single crystal according to CZ method, wherein Cu concentration in a component made of quartz to be used in a part in which a temperature in a furnace for single crystal growth is 1000° C. or more is 1 ppb or less, and Cu concentration in a component made of quartz to be used in a part in which a temperature in a furnace for single crystal growth is less than 1000° C. is 10 ppb or less, and a method for producing a silicon single crystal by using the producing apparatus. Thereby, there are provided a silicon single crystal and a silicon wafer which have extremely few crystal defects and have high quality and high yield, a producing apparatus therefor, and a producing method therefor.

摘要翻译： 本发明是通过CZ法生长的硅单晶，其中在硅单晶内部不存在Cu析出物，由硅单晶制造的硅晶片，其中在晶片的表面和晶片内部不存在Cu析出物， 以及根据CZ法制造硅单晶的装置，其中在用于单晶生长炉的温度为1000℃以上的部分中使用的石英成分中的Cu浓度为1ppb 在单晶生长用炉内的温度小于1000℃的部分中使用的石英成分中的Cu浓度为10ppb以下，制造硅单体的方法 晶体。 由此，提供了具有极少的晶体缺陷并具有高质量和高产率的硅单晶和硅晶片及其制造装置及其制造方法。

公开(公告)号：US20050205004A1

公开(公告)日：2005-09-22

申请号：US10516347

申请日：2003-12-08

申请人： Masahiro Sakurada ,  Izumi Fusegawa ,  Satoshi Soeta ,  Makoto Iida

发明人： Masahiro Sakurada ,  Izumi Fusegawa ,  Satoshi Soeta ,  Makoto Iida

IPC分类号： C30B15/14 ,  C30B35/00 ,  C30B1/00

CPC分类号： C30B15/14 ,  Y10T117/10

摘要： The present invention discloses a graphite heater for producing a single crystal used when producing a single crystal by the Czochralski method which comprises at least a terminal part to which electric current is supplied and a cylindrical heat generating part by resistance heating and are provided so as to surround a crucible for containing a raw material melt wherein the heat generating part has heat generating slit parts formed by being provided with upper slits extending downward from the upper end and lower slits extending upwards from the lower end by turns, and a length of at least one slit of the upper slits differs from others and/or a length of at least one slit of the lower slits differs from others so that a heat generating distribution of the heat generating part may be changed. Thereby, there can be provided a graphite heater for producing a single crystal which makes it possible to produce a silicon single crystal with high productivity when the silicon single crystal is pulled in a predetermined defect-free region or a predetermined defect region.

摘要翻译： 本发明公开了一种石墨加热器，用于生产通过切克劳斯基法生产单晶时使用的单晶，该方法至少包括供给电流的端子部分和电阻加热的圆柱形发热部分， 围绕用于容纳原料熔体的坩埚，其中发热部具有通过从上端向下延伸的上部狭缝形成的发热狭缝部和由下端向上延伸的下部狭缝，并且至少具有长度 上缝隙的一个狭缝与其他狭缝不同，和/或下狭缝的至少一个狭缝的长度不同，从而可以改变发热部分的发热分布。 因此，可以提供一种用于制造单晶的石墨加热器，当在预定的无缺陷区域或预定缺陷区域中拉伸硅单晶时，可以以高生产率制造单晶硅。

公开(公告)号：US06544490B1

公开(公告)日：2003-04-08

申请号：US09869932

申请日：2001-07-09

申请人： Hiroshi Takeno ,  Hideki Shigeno ,  Makoto Iida

发明人： Hiroshi Takeno ,  Hideki Shigeno ,  Makoto Iida

IPC分类号： C01B3326

CPC分类号： C30B15/203 ,  C30B15/206 ,  C30B29/06 ,  H01L21/3225

摘要： A silicon wafer obtained by slicing a silicon single crystal ingot grown by the Czochralski method with or without nitrogen doping, wherein the silicon wafer has an NV-region, an NV-region containing an OSF ring region or an OSF ring region for its entire plane and has an interstitial oxygen concentration of 14 ppma or less, and a method for producing it, as well as a method for evaluating defect regions of a silicon wafer. Thus, there are provided a silicon wafer that stably provides oxygen precipitation regardless of position in crystal or device production process, and a method for producing it. Further, defect regions of a silicon wafer of which pulling conditions are unknown and thus of which defect regions are also unknown can be evaluated.

摘要翻译： 通过切片在具有或不具有氮掺杂的切克劳斯基法生长的硅单晶锭获得的硅晶片，其中硅晶片具有NV区域，包含OSF环形区域的NV区域或用于其整个平面的OSF环形区域 并且具有14ppma以下的间隙氧浓度及其制造方法，以及评价硅晶片的缺陷区域的方法。 因此，提供了在晶体或器件制造工艺中无论位置如何稳定地提供氧沉淀的硅晶片及其制造方法。 此外，可以评估其中拉动条件未知且因此其缺陷区域也是未知的硅晶片的缺陷区域。

公开(公告)号：US06348180B1

公开(公告)日：2002-02-19

申请号：US09492001

申请日：2000-01-26

申请人： Makoto Iida ,  Satoshi Suzuki ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Satoshi Suzuki ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B1520

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203

摘要： A method for producing a silicon single crystal in accordance with the Czochralski method. The single crystal is grown in an N2(V) region where a large amount of precipitated oxygen and which is located within an N region located outside an OSF ring region, or is grown in a region including the OSF ring region, N1(V) and N2(V) regions located inside and outside the OSF ring region, in a defect distribution chart which shows a defect distribution in which the horizontal axis represents a radial distance D (mm) from the center of the crystal and the vertical axis represents a value of F/G (mm2/° C.·min), where F is a pulling rate (mm/min) of the single crystal, and G is an average intra-crystal temperature gradient (° C./mm) along the pulling direction within a temperature range of the melting point of silicon to 1400° C. The method allows production of silicon single crystal wafers in which neither FPDs nor L/D defects exist on the wafer surface, and gettering capability stemming from oxygen precipitation is provided over the entire wafer surface, and silicon single crystal wafers wherein OSF nuclei exit but no OSF ring appears when the wafer is subjected to thermal oxidation treatment, neither FPDs nor L/D defects exist on the wafer surface, and gettering capability is provided over the entire wafer surface.

摘要翻译： 根据Czochralski法生产硅单晶的方法。 单晶生长在大量析出氧并且位于OSF环外部的N区内的N2（V）区域中，或者在包括OSF环区域N1（V）的区域中生长， 和位于OSF环区域内外的N 2（V）区域的缺陷分布图，其表示水平轴表示与晶体中心的径向距离D（mm）的缺陷分布，纵轴表示 F / G的值（mm2 /℃·min），其中F是单晶的拉伸速率（mm / min），G是沿着单晶的平均晶体内温度梯度（°C / mm） 在硅熔点的温度范围内拉伸方向为1400℃。该方法允许生产晶片表面上不存在FPD和L / D缺陷的硅单晶晶片，并且提供由氧沉淀产生的吸杂能力 整个晶圆表面和硅单晶 当晶片进行热氧化处理时，在晶片表面上不存在FPD和L / D缺陷，并且在整个晶片表面上提供吸杂能力，其中OSF核离开但没有OSF环出现。

公开(公告)号：US06334896B1

公开(公告)日：2002-01-01

申请号：US09600033

申请日：2000-07-11

申请人： Makoto Iida ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B1504

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203 ,  C30B15/206

摘要： A method for producing a silicon single crystal, wherein, when a silicon single crystal is grown by the Czochralski method, the crystal is pulled with such conditions as present in a region defined by a boundary between a V-rich region and an N-region and a boundary between an N-region and an I-rich region in a defect distribution chart showing defect distribution which is plotted with D [mm] as abscissa and F/G [mm2/° C.·min] as ordinate, wherein D represents a distance between center of the crystal and periphery of the crystal, F/G [mm/min] represents a pulling rate and G [° C./mm] represents an average temperature gradient along the crystal pulling axis direction in the temperature range of from the melting point of silicon to 1400° C., and time required for crystal temperature to pass through the temperature region of from 900° C. to 600° C. is controlled to be 700 minutes or shorter, and a silicon single crystal wafer grown by the Czochralski method, which is a silicon single crystal wafer having N-region for its entire plane, and does not generate OSFs by a single-step thermal oxidation treatment, but generates OSFs by a two-step thermal oxidation treatment. According to the method, a silicon single crystal wafer of an extremely low defect density, which has the N-region for the entire plane of the crystal, is obtained by the CZ, while maintaining high productivity.

摘要翻译： 一种硅单晶的制造方法，其中，当通过切克劳斯斯克方法生长硅单晶时，以存在于富V区和N区之间的边界的区域中的条件拉伸晶体 和缺陷分布图中的N区域和富I区域之间的边界，示出了以D [mm]为横坐标绘制的缺陷分布，F / G [mm2 /℃·min]为纵坐标，其中D 表示晶体的中心和晶体的周边之间的距离，F / G [mm / min]表示拉伸速度，G [℃/ mm]表示在温度范围内沿着拉晶轴方向的平均温度梯度 从硅的熔点到1400℃，晶体温度通过900℃至600℃的温度所需的时间被控制为700分钟或更短，并且硅单晶 通过Czochralski方法生长的晶片，其是硅单体 晶片在其整个平面上具有N区，并且不通过单步热氧化处理产生OSF，而是通过两步热氧化处理产生OSF。 根据该方法，通过CZ获得具有用于整个晶体平面的N区域的具有极低缺陷密度的硅单晶晶片，同时保持高生产率。

公开(公告)号：US6120599A

公开(公告)日：2000-09-19

申请号：US454841

申请日：1999-12-06

申请人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/00 ,  C30B15/20 ,  C30B29/06 ,  H01L21/02 ,  H01L21/208

CPC分类号： C30B29/06 ,  C30B15/203 ,  C30B15/206

摘要： In a method for producing a silicon single crystal wafer, a silicon single crystal is grown in accordance with the Czochralski method such that the F/G value becomes 0.112-0.142 mm.sup.2 /.degree. C..multidot.min at the center of the crystal, where F is a pulling rate (mm/min) of the single crystal, and G is an average intra-crystal temperature gradient (.degree. C./mm) along the pulling direction within a temperature range of the melting point of silicon to 1400.degree. C. Additionally, the single crystal is pulled such that the interstitial oxygen concentration becomes less than 24 ppma, or the time required to pass through a temperature zone of 1050-850.degree. C. within the crystal is controlled to become 140 minutes or less. The method allows production of silicon single crystal wafers in which neither FPDs nor L/D defects exist on the wafer surface, which therefore has an extremely low defect density, and whose entire surface is usable.

摘要翻译： 在制造硅单晶晶片的方法中，根据Czochralski法生长硅单晶，使得F / G值在晶体中心处为0.112-0.142mm 2 /℃×min，其中F为 单晶的拉伸速度（mm / min），G是在硅熔点至1400℃的温度范围内沿着牵引方向的平均晶体内温度梯度（DEG C./mm）。另外 拉伸单晶，使得间隙氧浓度变得小于24ppma，或者通过晶体内的1050-850℃的温度区所需的时间被控制为140分钟以下。 该方法允许生产其中晶片表面上不存在FPD和L / D缺陷的硅单晶晶片，因此具有极低的缺陷密度，并且其整个表面可用。

公开(公告)号：US4163215A

公开(公告)日：1979-07-31

申请号：US810759

申请日：1977-06-28

申请人： Makoto Iida

发明人： Makoto Iida

IPC分类号： G08B25/00 ,  G07C9/00 ,  G08B13/00 ,  G08B15/00 ,  G08B25/04 ,  H04Q9/00

CPC分类号： G07C9/00904

摘要： Herein disclosed is a safety lock system which includes an electric lock mounted on a gateway to a certain region, a card reader, a display device and a main controller. The main controller is arranged so that it can check the card data read by the card reader. Accordingly, when the card data are in agreement with the predetermined data, the main controller feeds a locking or unlocking drive signal to the electric lock. On the contrary, when the card data are not in agreement with the predetermined data, the main controller emits a first alarm signal to the display device. Furthermore, when the main controller receives a normal operation signal from the electric lock, the main controller emits a signal of confirmation of the normal operation of the electric lock to the display device; whereas when the main controller does not receive the normal operation signal, it emits a second alarm signal to the display device.

摘要翻译： 这里公开了一种安全锁系统，其包括安装在特定区域的网关上的电锁，读卡器，显示装置和主控制器。 主控制器被布置成可以检查读卡器读取的卡片数据。 因此，当卡数据与预定数据一致时，主控制器向电锁提供锁定或解锁驱动信号。 相反，当卡数据与预定数据不一致时，主控制器向显示装置发出第一报警信号。 此外，当主控制器从电锁接收到正常操作信号时，主控制器向显示装置发出确认电锁的正常操作的信号; 而当主控制器没有接收到正常操作信号时，它向显示装置发出第二个报警信号。