公开(公告)号：US4145253A

公开(公告)日：1979-03-20

申请号：US845970

申请日：1977-10-27

申请人： Takao Iida ,  Kunikatsu Shirahata ,  Isao Maisubara ,  Masahiro Sugimoto ,  Shinzo Ishii ,  Ryo Okachi ,  Takashi Nara

发明人： Takao Iida ,  Kunikatsu Shirahata ,  Isao Maisubara ,  Masahiro Sugimoto ,  Shinzo Ishii ,  Ryo Okachi ,  Takashi Nara

IPC分类号： C07H15/224 ,  C12D9/14

CPC分类号： C07H15/224 ,  Y10S435/863

摘要： New antibiotic compounds, Fortimicin factors D and KE are produced by fermentation of microorganisms belonging to the genus Micromonospora. The antibiotic compounds are accumulated in the culture liquor and are isolated therefrom. A semisynthetic method of producing Fortimicin KE utilizing Fortimicin D is also disclosed.

摘要翻译： 新型抗生素化合物，Fortimicin因子D和KE通过发酵属于小单孢菌属的微生物产生。 抗生素化合物在培养液中积聚并从中分离。 还公开了使用Fortimicin D生产Fortimicin KE的半合成方法。

公开(公告)号：US09543428B2

公开(公告)日：2017-01-10

申请号：US14400365

申请日：2013-06-06

申请人： DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Akitaka Soeno ,  Jun Morimoto

发明人： Yuichi Takeuchi ,  Naohiro Suzuki ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Akitaka Soeno ,  Jun Morimoto ,  Narumasa Soejima ,  Yukihiko Watanabe

IPC分类号： H01L29/78 ,  H01L29/16 ,  H01L21/82 ,  H01L29/66 ,  H01L29/10 ,  H01L29/872 ,  H01L21/04 ,  H01L21/306 ,  H01L21/308 ,  H01L29/423 ,  H01L29/417 ,  H01L29/06 ,  H01L29/08 ,  H01L29/861

CPC分类号： H01L29/7811 ,  H01L21/046 ,  H01L21/0475 ,  H01L21/30604 ,  H01L21/308 ,  H01L21/761 ,  H01L21/8213 ,  H01L29/0615 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/157 ,  H01L29/158 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7806 ,  H01L29/7813 ,  H01L29/861 ,  H01L29/872

摘要： An SiC semiconductor device has a p type region including a low concentration region and a high concentration region filled in a trench formed in a cell region. A p type column is provided by the low concentration region, and a p+ type deep layer is provided by the high concentration region. Thus, since a SJ structure can be made by the p type column and the n type column provided by the n type drift layer, an on-state resistance can be reduced. As a drain potential can be blocked by the p+ type deep layer, at turnoff, an electric field applied to the gate insulation film can be alleviated and thus breakage of the gate insulation film can be restricted. Therefore, the SiC semiconductor device can realize the reduction of the on-state resistance and the restriction of breakage of the gate insulation film.

摘要翻译： SiC半导体器件具有包含低浓度区域和填充在形成于单元区域的沟槽中的高浓度区域的p型区域。 由低浓度区域提供p型列，并且由高浓度区域提供p +型深层。 因此，由于可以通过由n型漂移层提供的p型列和n型列来形成SJ结构，所以可以降低导通电阻。 由于漏极电位可以被p +型深层阻挡，所以在关断时，施加到栅极绝缘膜的电场可以减轻，从而可以限制栅极绝缘膜的破裂。 因此，SiC半导体器件可以实现导通电阻的降低和栅极绝缘膜的破损的限制。

公开(公告)号：US09196399B2

公开(公告)日：2015-11-24

申请号：US14343020

申请日：2012-09-04

申请人： Masahiro Sugimoto ,  Hirokazu Tsubouchi ,  Hitoshi Shimizu ,  Toshiya Okada ,  Toshirou Sakai ,  Kazuya Takahata ,  Hitoshi Tamura ,  Toshiyuki Mito

发明人： Masahiro Sugimoto ,  Hirokazu Tsubouchi ,  Hitoshi Shimizu ,  Toshiya Okada ,  Toshirou Sakai ,  Kazuya Takahata ,  Hitoshi Tamura ,  Toshiyuki Mito

IPC分类号： H01L39/14 ,  H01B12/10 ,  H01B13/00 ,  H01L39/24

CPC分类号： H01B12/10 ,  H01B13/00 ,  H01L39/14 ,  H01L39/2403 ,  H01L39/2409 ,  Y10T29/49014

摘要： A method for producing a composite superconductor includes: a structure forming process of forming a structure including a metal covering member (20) including at least one to-be-joined portion, a superconductor (30) arranged inside the metal covering member, and a reinforcing member (40) arranged between the superconductor (30) and the at least one to-be-joined portion; and a joining process of joining thereafter the at least one to-be-joined portion.

摘要翻译： 复合超导体的制造方法包括：形成包括包括至少一个待接合部的金属覆盖部件（20）的结构的结构形成工序，配置在金属覆盖部件内的超导体（30），以及 配置在超导体（30）与至少一个被接合部之间的加强部件（40） 以及其后连接至少一个待接合部分的接合过程。

公开(公告)号：US08939547B2

公开(公告)日：2015-01-27

申请号：US12965102

申请日：2010-12-10

申请人： Akira Kida ,  Masahiro Sugimoto ,  Masaharu Ueda

发明人： Akira Kida ,  Masahiro Sugimoto ,  Masaharu Ueda

IPC分类号： B41J2/165 ,  B41J2/515 ,  B41J25/34 ,  B41J11/00

CPC分类号： B41J2/515 ,  B41J11/0025 ,  B41J25/34

摘要： A holder that holds a line recording head is displaced in a sheet width direction against the urging force of an elastic portion to bring an abutment portion of the holder into contact with one of a plurality of positioning surfaces provided at a reference portion of a sheet conveying mechanism. The holder is positioned and fixed to the reference portion, with the urging force exerted thereto.

摘要翻译： 保持行记录头的保持器抵抗弹性部分的推动力沿纸张宽度方向移位，使保持件的抵接部分与设置在纸张传送的参考部分的多个定位表面中的一个相接触 机制。 保持器定位并固定到参考部分上，并施加施力。

公开(公告)号：US08525223B2

公开(公告)日：2013-09-03

申请号：US13450639

申请日：2012-04-19

申请人： Hiroki Watanabe ,  Shinichiro Miyahara ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Yukihiko Watanabe ,  Narumasa Soejima ,  Tsuyoshi Ishikawa

发明人： Hiroki Watanabe ,  Shinichiro Miyahara ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Yukihiko Watanabe ,  Narumasa Soejima ,  Tsuyoshi Ishikawa

IPC分类号： H01L21/02

CPC分类号： H01L29/7813 ,  H01L29/045 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7397

摘要： A SiC semiconductor device includes: a SiC substrate including a first or second conductive type layer and a first conductive type drift layer and including a principal surface having an offset direction; a trench disposed on the drift layer and having a longitudinal direction; and a gate electrode disposed in the trench via a gate insulation film. A sidewall of the trench provides a channel formation surface. The vertical semiconductor device flows current along with the channel formation surface of the trench according to a gate voltage applied to the gate electrode. The offset direction of the SiC substrate is perpendicular to the longitudinal direction of the trench.

摘要翻译： SiC半导体器件包括：SiC衬底，包括第一或第二导电类型层和第一导电类型漂移层，并且包括具有偏移方向的主表面; 设置在所述漂移层上并具有纵向方向的沟槽; 以及通过栅极绝缘膜设置在沟槽中的栅电极。 沟槽的侧壁提供通道形成表面。 垂直半导体器件根据施加到栅电极的栅极电压与沟道形成表面一起流动电流。 SiC衬底的偏移方向垂直于沟槽的纵向方向。

公开(公告)号：US08334541B2

公开(公告)日：2012-12-18

申请号：US13177747

申请日：2011-07-07

申请人： Shinichiro Miyahara ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Jun Morimoto ,  Yukihiko Watanabe

发明人： Shinichiro Miyahara ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Jun Morimoto ,  Yukihiko Watanabe

IPC分类号： H01L27/088

CPC分类号： H01L29/7813 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7397 ,  H01L29/7828

摘要： A SiC semiconductor device includes a reverse type MOSFET having: a substrate; a drift layer and a base region on the substrate; a base contact layer and a source region on the base region; multiple trenches having a longitudinal direction in a first direction penetrating the source region and the base region; a gate electrode in each trench via a gate insulation film; an interlayer insulation film covering the gate electrode and having a contact hole, through which the source region and the base contact layer are exposed; a source electrode coupling with the source region and the base region through the contact hole; a drain electrode on the substrate. The source region and the base contact layer extend along with a second direction perpendicular to the first direction, and are alternately arranged along with the first direction. The contact hole has a longitudinal direction in the first direction.

摘要翻译： SiC半导体器件包括：反向型MOSFET，具有：衬底; 衬底上的漂移层和基极区域; 基极接触层和基极区上的源极区; 多个沟槽具有沿着第一方向的纵向方向穿过源极区域和基极区域; 通过栅极绝缘膜在每个沟槽中的栅电极; 覆盖所述栅电极且具有接触孔的层间绝缘膜，所述源极区域和所述基极接触层暴露在所述接触孔中; 源极通过接触孔与源极区域和基极区域耦合; 衬底上的漏电极。 源区域和基底接触层与垂直于第一方向的第二方向一起延伸，并且与第一方向交替布置。 接触孔沿第一方向具有纵向方向。

公开(公告)号：US08008180B2

公开(公告)日：2011-08-30

申请号：US12530901

申请日：2008-03-13

申请人： Yasuo Takahashi ,  Masakatsu Maeda ,  Akinori Seki ,  Akira Kawahashi ,  Masahiro Sugimoto

发明人： Yasuo Takahashi ,  Masakatsu Maeda ,  Akinori Seki ,  Akira Kawahashi ,  Masahiro Sugimoto

IPC分类号： H01L21/44

CPC分类号： H01L29/7813 ,  H01L21/0485 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/45 ,  H01L29/732 ,  Y10S438/931

摘要： A method of forming an Ohmic contact on a P-type 4H—SiC and an Ohmic contact formed by the same are provided. A method of forming an Ohmic contact on a P-type 4H—SiC substrate including a deposition step of successively depositing a 1 to 60 nm thick first Al layer, Ti layer, and second Al layer on a P-type 4H—SiC substrate and an alloying step of forming an alloy layer between the SiC substrate and the Ti layer through the first Al layer by heat treatment in a nonoxidizing atmosphere. An Ohmic contact on a P-type 4H—SiC substrate formed by this method is also provided.

摘要翻译： 提供了在P型4H-SiC上形成欧姆接触的方法和由其形成的欧姆接触。 在P型4H-SiC衬底上形成欧姆接触的方法，包括在P型4H-SiC衬底上依次沉积1至60nm厚的第一Al层，Ti层和第二Al层的沉积步骤;以及 合金化步骤，通过在非氧化气氛中的热处理，通过第一Al层在SiC衬底和Ti层之间形成合金层。 还提供了通过该方法形成的P型4H-SiC衬底上的欧姆接触。

公开(公告)号：US20110203513A1

公开(公告)日：2011-08-25

申请号：US13029791

申请日：2011-02-17

申请人： Hiroki WATANABE ,  Yasuo Kitou ,  Kensaku Yamamoto ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Jun Morimoto ,  Yukihiko Watanabe ,  Narumasa Soejima ,  Tsuyoshi Ishikawa

发明人： Hiroki WATANABE ,  Yasuo Kitou ,  Kensaku Yamamoto ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Jun Morimoto ,  Yukihiko Watanabe ,  Narumasa Soejima ,  Tsuyoshi Ishikawa

IPC分类号： C30B19/12

CPC分类号： H01L21/02529 ,  C30B29/36 ,  C30B33/02 ,  H01L21/02378 ,  H01L21/02658 ,  H01L21/02667 ,  H01L29/66068

摘要： In a method of manufacturing a silicon carbide substrate, a defect-containing substrate made of silicon carbide is prepared. The defect-containing substrate has a front surface, a rear surface being opposite to the front surface, and a surface portion adjacent to the front surface. The detect-containing substrate includes a screw dislocation in the surface portion. The front surface of the defect-containing substrate is applied with an external force so that a crystallinity of the surface portion is reduced. After being applied with the external force, the defect-containing substrate is thermally treated so that the crystallinity of the surface portion is recovered.

摘要翻译： 在制造碳化硅衬底的方法中，制备由碳化硅制成的含缺陷衬底。 含缺陷的基板具有前表面，与前表面相对的后表面和与前表面相邻的表面部分。 含检测基板包括在表面部分中的螺旋位错。 使含有缺陷的基板的前表面被施加外力，使得表面部分的结晶度降低。 在施加外力之后，对含缺陷的基板进行热处理，以恢复表面部分的结晶度。

公开(公告)号：US20110115863A1

公开(公告)日：2011-05-19

申请号：US12902939

申请日：2010-10-12

申请人： Yoshiaki Suzuki ,  Yuji Kanome ,  Seiji Suzuki ,  Hiroyuki Tanaka ,  Takeaki Nakano ,  Masahiro Sugimoto ,  Susumu Hirosawa

发明人： Yoshiaki Suzuki ,  Yuji Kanome ,  Seiji Suzuki ,  Hiroyuki Tanaka ,  Takeaki Nakano ,  Masahiro Sugimoto ,  Susumu Hirosawa

IPC分类号： B41J2/005

CPC分类号： B41J11/002 ,  B41J2/165

摘要： An apparatus includes a humidifying unit that generates humidified gas, a drying unit that dries ink applied to a sheet by a recording unit, a first duct that supplies gas discharged from the drying unit to at least one of the humidifying unit and the recording unit, and a second duct that supplies the humidified gas generated by the humidifying unit to the recording unit.

摘要翻译： 一种装置，包括产生加湿气体的加湿单元，通过记录单元干燥施加到片材上的墨的干燥单元，将从干燥单元排出的气体供给到加湿单元和记录单元中的至少一个的第一管道， 以及第二管道，其将由加湿单元产生的加湿气体供给到记录单元。

公开(公告)号：US20100222222A1

公开(公告)日：2010-09-02

申请号：US12160964

申请日：2008-07-15

申请人： Toshiyuki Mito ,  Kazuya Takahata ,  Toshiya Okada ,  Toshio Ushiyama ,  Masahiro Sugimoto ,  Hirokazu Tsubouchi

发明人： Toshiyuki Mito ,  Kazuya Takahata ,  Toshiya Okada ,  Toshio Ushiyama ,  Masahiro Sugimoto ,  Hirokazu Tsubouchi

IPC分类号： H01L39/00

CPC分类号： H01L39/14 ,  H01F6/06 ,  H01L39/2403 ,  H01L39/2409 ,  Y10T428/31678

摘要： Disclosed is a composite superconductor comprising a superconductor and a metal member. The metal member is composed of one or more members to be joined together in such manner that the one or more members cover the superconductor, and at least one member is made of aluminum or an aluminum alloy.

摘要翻译： 公开了一种包括超导体和金属构件的复合超导体。 金属构件由一个或多个构件组成，以使得一个或多个构件覆盖超导体的方式接合在一起，并且至少一个构件由铝或铝合金制成。