公开(公告)号：US20240428820A1

公开(公告)日：2024-12-26

申请号：US18367882

申请日：2023-09-13

Applicant: Western Digital Technologies, Inc. ,  Tokyo Institute of Technology

Inventor： Quang LE ,  Xiaoyong LIU ,  Brian R. YORK ,  Cherngye HWANG ,  Son T. LE ,  Hisashi TAKANO ,  Fan TUO ,  Hassan OSMAN ,  Nam Hai PHAM

IPC: G11B5/39

Abstract: The present disclosure generally relates to a magnetic recording head comprising a read head. The read head comprises a first sensor disposed at a media facing surface (MFS) comprising at least one free layer, a second sensor disposed at the MFS comprising at least one free layer, a first spin generator spaced from the first sensor and recessed from the MFS, and a second spin generator spaced from the second sensor and recessed from the MFS. The first and second spin generators each individually comprises at least one spin orbit torque (SOT) layer. The SOT layer may comprise BiSb. The first and second sensors are configured to detect a read signal using a first voltage lead and a second voltage lead. The first and second spin generators are configured to inject spin current through non-magnetic layers to the first and second sensors using a plurality of current leads.

公开(公告)号：US20240420732A1

公开(公告)日：2024-12-19

申请号：US18367877

申请日：2023-09-13

Applicant: Western Digital Technologies, Inc. ,  Tokyo Institute of Technology

Inventor： Quang LE ,  Xiaoyong LIU ,  Brian R. YORK ,  Cherngye HWANG ,  Son T. LE ,  Hisashi TAKANO ,  Fan TUO ,  Hassan OSMAN ,  Nam Hai PHAM

IPC: G11B5/31

Abstract: The present disclosure generally relates to a magnetic recording head comprising a read head. The read head comprises a sensor disposed at a media facing surface (MFS) and a spin generator spaced from the sensor and recessed from the MFS. The sensor and spin generators are disposed on a non-magnetic layer. The sensor comprises a free layer and the spin generator comprises at least one spin orbit torque (SOT) layer. The SOT layer may comprise topological material such as BiSb. The sensor is configured to detect a read signal using a first voltage lead and a second voltage lead. The spin generator is configured to inject spin current through the non-magnetic layer to the sensor using a first current lead and a second current lead. The shape of the non-magnetic layer is a triangular or trapezoidal shape to further concentrate spin current.

公开(公告)号：US20240005973A1

公开(公告)日：2024-01-04

申请号：US17854785

申请日：2022-06-30

Applicant: Western Digital Technologies, Inc.

Inventor： Quang LE ,  Brian R. YORK ,  Cherngye HWANG ,  Xiaoyong LIU ,  Michael A. GRIBELYUK ,  Xiaoyu XU ,  Susumu OKAMURA ,  Kuok San HO ,  Hisashi TAKANO ,  Randy G. SIMMONS

IPC: G11C11/16 ,  H01L43/10 ,  G11B5/39 ,  H01L43/08 ,  H01L43/04 ,  H01L43/06 ,  H01L27/22

CPC classification number: G11C11/161 ,  H01L43/10 ,  G11B5/3906 ,  H01L43/08 ,  H01L43/04 ,  H01L43/06 ,  H01L27/222

Abstract: The present disclosure generally relates to spin-orbit torque (SOT) devices comprising a bismuth antimony (BiSb) layer. The SOT devices further comprise one or more GexNiFe layers, where at least one GexNiFe layer is disposed in contact with the BiSb layer. The GexNiFe layer has a thickness less than or equal to about 15 Å when used as an interlayer on top of the BiSb layer or less than or equal to 40 Å when used as a buffer layer underneath the BiSb. When the BiSb layer is doped with a dopant comprising a gas, a metal, a non-metal, or a ceramic material, the GexNiFe layer promotes the BiSb layer to have a (012) orientation. When the BiSb layer is undoped, the GexNiFe layer promotes the BiSb layer to have a (001) orientation. Utilizing the GexNiFe layer allows the crystal orientation of the BiSb layer to be selected.

公开(公告)号：US20240005951A1

公开(公告)日：2024-01-04

申请号：US17854617

申请日：2022-06-30

Applicant: Western Digital Technologies, Inc.

Inventor： Ning SHI ,  Brian R. YORK ,  Susumu OKAMURA ,  Suping SONG

IPC: G11B5/39

CPC classification number: G11B5/3929 ,  G11B5/3912

Abstract: Aspects of the present disclosure generally relate to magnetic recording heads (such as write heads of data storage devices) that include multilayer structures to facilitate targeted switching and relatively low coercivity. In one or more embodiments, a magnetic recording head includes an iron-cobalt (FeCo) layer having a crystalline structure that is a cubic lattice structure, a first crystalline layer formed of a first material, and a second crystalline layer between the first crystalline layer and the FeCo layer. The second crystalline layer is formed of a second material different from the first material, and the second crystalline layer interfaces both the FeCo layer and the first crystalline layer. The crystalline structure of the FeCo layer has a texture of .

公开(公告)号：US20230419990A1

公开(公告)日：2023-12-28

申请号：US18244555

申请日：2023-09-11

Applicant: Western Digital Technologies, Inc.

Inventor： Xiaoyong LIU ,  Zhanjie LI ,  Quang LE ,  Brian R. YORK ,  Cherngye HWANG ,  Kuok San HO ,  Hisashi TAKANO

IPC: G11B5/39 ,  G11B5/11

CPC classification number: G11B5/3909 ,  G11B5/3967 ,  G11B5/3912 ,  G11B5/11 ,  G11B5/3932 ,  G11B2005/3996

Abstract: The present disclosure generally relates to a bismuth antimony (BiSb) based STO (spin torque oscillator) sensor. The STO sensor comprises a SOT device and a magnetic tunnel junction (MTJ) structure. By utilizing a BiSb layer within the SOT device, a larger spin Hall angle (SHA) can be achieved, thereby improving the efficiency and reliability of the STO sensor.

公开(公告)号：US20210390977A1

公开(公告)日：2021-12-16

申请号：US17463358

申请日：2021-08-31

Applicant: Western Digital Technologies, Inc.

Inventor： James Mac FREITAG ,  Zheng GAO ,  Susumu OKAMURA ,  Brian R. YORK

IPC: G11B5/147 ,  G11B11/105 ,  G11B5/31

Abstract: Certain embodiments are directed to a spin torque oscillator (STO) device in a microwave assisted magnetic recording (MAMR) device. The magnetic recording head includes a seed layer, a spin polarization layer over the seed layer, a spacer layer over the spin polarization layer, and a field generation layer is over the spacer layer. In one embodiment, the seed layer comprises a tantalum alloy layer. In another embodiment, the seed layer comprises a template layer and a damping reduction layer over the template layer. In yet another embodiment, the seed layer comprises a texture reset layer, a template layer on the texture reset layer, and a damping reduction layer on the template layer.

公开(公告)号：US20210249038A1

公开(公告)日：2021-08-12

申请号：US17100199

申请日：2020-11-20

Applicant: Western Digital Technologies, Inc. ,  Tokyo Institute of Technology

Inventor： Quang LE ,  Cherngye HWANG ,  Brian R. YORK ,  Thao A. NGUYEN ,  Zheng GAO ,  Kuok San HO ,  Pham Nam Hai

IPC: G11B5/11 ,  H01L27/22 ,  H01L43/04 ,  H01L43/06 ,  H01L43/10 ,  H01F10/32 ,  G11B5/147

Abstract: A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a buffer layer formed over the substrate, and a bismuth antimony (BiSb) layer formed over the buffer layer, the BiSb layer having a (012) orientation. In certain embodiments, the SOT MTJ device is part of a microwave assisted magnetic recording (MAMR) write head. In certain embodiments, the SOT MTJ device is part of a magnetoresistive random access memory (MRAM) device.