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    METHOD OF MANUFACTURING NON-VOLATILE MEMORY DEVICE
    31.
    发明申请
    METHOD OF MANUFACTURING NON-VOLATILE MEMORY DEVICE 有权
    制造非易失性存储器件的方法

    公开(公告)号：US20120015512A1

    公开(公告)日：2012-01-19

    申请号：US13238084

    申请日：2011-09-21

    申请人： Suk-Kang SUNG ,  Choong-Ho Lee ,  Dong-Uk Choi ,  Hee-Soo Kang

    发明人： Suk-Kang SUNG ,  Choong-Ho Lee ,  Dong-Uk Choi ,  Hee-Soo Kang

    IPC分类号： H01L21/28

    CPC分类号： H01L27/11568

    摘要： A non-volatile memory device includes field insulating layer patterns on a substrate to define an active region of the substrate, upper portions of the field insulating layer patterns protruding above an upper surface of the substrate, a tunnel insulating layer on the active region, a charge trapping layer on the tunnel insulating layer, a blocking layer on the charge trapping layer, first insulating layers on upper surfaces of the field insulating layer patterns, and a word line structure on the blocking layer and first insulating layers.

    摘要翻译： 非易失性存储器件包括在衬底上的场绝缘层图案，以限定衬底的有源区，场绝缘层图案的上部突出在衬底的上表面上，在有源区上的隧道绝缘层， 隧道绝缘层上的电荷俘获层，电荷俘获层上的阻挡层，场绝缘层图案的上表面上的第一绝缘层，以及阻挡层和第一绝缘层上的字线结构。

    Method of manufacturing a non-volatile semiconductor device
    32.
    发明授权
    Method of manufacturing a non-volatile semiconductor device 有权
    制造非易失性半导体器件的方法

    公开(公告)号：US07867849B2

    公开(公告)日：2011-01-11

    申请号：US12222074

    申请日：2008-08-01

    申请人： Choong-Ho Lee ,  Jai-Hyuk Song ,  Dong-Uk Choi ,  Suk-Kang Sung

    发明人： Choong-Ho Lee ,  Jai-Hyuk Song ,  Dong-Uk Choi ,  Suk-Kang Sung

    IPC分类号： H01L21/336

    CPC分类号： H01L21/324 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11568

    摘要： Example embodiments relate to methods of fabricating a non-volatile memory device. According to example embodiments, a method of fabricating a non-volatile memory device may include forming at least one gate structure on an upper face of a substrate. The at least one gate structure may include a tunnel insulation layer pattern, a charge storing layer pattern, a dielectric layer pattern and a control gate. According to example embodiments, a method of fabricating a non-volatile memory device may also include forming a silicon nitride layer on the upper face of the substrate to cover the at least one gate structure, forming an insulating interlayer on the silicon nitride layer on the upper face of the substrate, and providing an annealing gas toward the upper face of the substrate and a lower face of the substrate to cure defects of the tunnel insulation layer pattern.

    摘要翻译： 示例实施例涉及制造非易失性存储器件的方法。 根据示例性实施例，制造非易失性存储器件的方法可以包括在衬底的上表面上形成至少一个栅极结构。 至少一个栅极结构可以包括隧道绝缘层图案，电荷存储层图案，电介质层图案和控制栅极。 根据示例实施例，制造非易失性存储器件的方法还可以包括在衬底的上表面上形成氮化硅层以覆盖至少一个栅极结构，在氮化硅层上形成绝缘中间层 并且朝向基板的上表面和基板的下表面提供退火气体，以固化隧道绝缘层图案的缺陷。

    SOLAR ENERGY MODULE HAVING REPAIR LINE, SOLAR ENERGY ASSEMBLY HAVING THE SAME, METHOD OF REPAIRING THE SOLAR ENERGY MODULE AND METHOD OF TRIMMING THE SOLAR ENERGY ASSEMBLY
    34.
    发明申请
    SOLAR ENERGY MODULE HAVING REPAIR LINE, SOLAR ENERGY ASSEMBLY HAVING THE SAME, METHOD OF REPAIRING THE SOLAR ENERGY MODULE AND METHOD OF TRIMMING THE SOLAR ENERGY ASSEMBLY 审中-公开
    具有修理线的太阳能模块，具有该修复线的太阳能组件，修复太阳能模块的方法和太阳能组件的调整方法

    公开(公告)号：US20090229596A1

    公开(公告)日：2009-09-17

    申请号：US12400444

    申请日：2009-03-09

    申请人： Myung-Hun Shin ,  Dong-Uk Choi ,  Byoung-June Kim ,  Jin-Seock Kim ,  Czang-Ho Lee ,  Seung-Jae Jung ,  Joon-Young Seo

    发明人： Myung-Hun Shin ,  Dong-Uk Choi ,  Byoung-June Kim ,  Jin-Seock Kim ,  Czang-Ho Lee ,  Seung-Jae Jung ,  Joon-Young Seo

    IPC分类号： F24J2/00

    CPC分类号： H01L31/042 ,  H01L31/0201 ,  H01L31/046 ,  H01L31/05 ,  H02S40/36 ,  H02S50/10 ,  Y02E10/50 ,  Y10T307/50

    摘要： A method of electrically eliminating defective solar cell units that are disposed within an integrated solar cells module and a method of trimming an output voltage of the integrated solar cells module are provided, where the solar cells module has a large number (e.g., 50 or more) of solar cell units integrally disposed therein and initially connected in series one to the next. The method includes providing a corresponding plurality of repair pads, each integrally extending from a respective electrode layer of the solar cell units, and providing a bypass conductor integrated within the module and extending adjacent to the repair pads. Pad-to-pad spacings and pad-to-bypass spacings are such that pad-to-pad connecting bridges may be selectively created between adjacent ones of the repair pads and such that pad-to-bypass connecting bridges may be selectively created between the repair pads and the adjacently extending bypass conductor.

    摘要翻译： 提供了一种电除去集成太阳能电池模块内的有缺陷的太阳能电池单元的方法和一种微调集成太阳能电池组件的输出电压的方法，其中太阳能电池模块具有大量（例如，50个或更多个） ）的太阳能电池单元整体地设置在其中并且最初串联连接到下一个。 该方法包括提供相应的多个修复焊盘，每个修补焊盘从太阳能电池单元的相应电极层整体延伸，并且提供集成在模块内并在修补焊盘附近延伸的旁路导体。 垫到衬垫间距和衬垫到旁路间隔使得可以在相邻的修补焊盘之间选择性地创建焊盘到焊盘的连接桥，并且可以在焊盘到旁路的连接桥之间选择性地创建焊盘到旁路的连接桥 修补垫和相邻延伸的旁路导体。

    Method of programming data in a NAND flash memory device and method of reading data in the NAND flash memory device
    35.
    发明申请
    Method of programming data in a NAND flash memory device and method of reading data in the NAND flash memory device 有权
    在NAND闪存器件中对数据进行编程的方法以及在NAND闪存器件中读取数据的方法

    公开(公告)号：US20090190398A1

    公开(公告)日：2009-07-30

    申请号：US12289847

    申请日：2008-11-05

    申请人： Hee-Soo Kang ,  Choong-Ho Lee ,  Dong-Uk Choi

    发明人： Hee-Soo Kang ,  Choong-Ho Lee ,  Dong-Uk Choi

    IPC分类号： G11C16/04 ,  G11C16/06

    CPC分类号： G11C11/5628 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/3418 ,  G11C2211/5641

    摘要： A method of programming data in a NAND flash memory device including at least one even bitline and at least one odd bitline, the method including programming N-bit data into first cells coupled to the at least one even bitline or the at least one odd bitline and programming M-bit data into second cells coupled to the other of the at least one even bitline and the at least one odd bitline, where N is a natural number greater than one and M is a natural number greater than N.

    摘要翻译： 一种在包括至少一个偶数位线和至少一个奇数位线的NAND闪存器件中编程数据的方法，所述方法包括将N位数据编程到耦合到所述至少一个偶数位线或所述至少一个奇数位线 以及将M位数据编程到耦合到所述至少一个偶数位线和所述至少一个奇数位线中的另一个的第二单元中，其中N是大于1的自然数，M是大于N的自然数。

    Color filter composition, method and apparatus for manufacturing a color filter having the same
    36.
    发明授权
    Color filter composition, method and apparatus for manufacturing a color filter having the same 失效
    滤色器组合物，用于制造具有该滤色器的滤色器的方法和装置

    公开(公告)号：US07524441B2

    公开(公告)日：2009-04-28

    申请号：US10799200

    申请日：2004-03-12

    申请人： Sang-Ki Jeong ,  Dong-Uk Choi ,  Sung-Ki Jung

    发明人： Sang-Ki Jeong ,  Dong-Uk Choi ,  Sung-Ki Jung

    IPC分类号： C04B14/00 ,  G02B5/22 ,  B01F3/18

    CPC分类号： C09D4/06 ,  G02B5/223

    摘要： A color filter composition comprises a mixture of a binder and a monomer in a predetermined ratio, a pigment, and a solvent. The predetermined ratio is a ratio of the binder to the monomer and ranges from about 50:50 to about 60:40. The color filter composition further comprises a solid powder having a weight percent in the color filter composition ranging from about 12% to about 18%, wherein the solid powder includes the pigment. The pigment has a weight percent in the solid powder ranging from about 28% to about 38%.

    摘要翻译： 滤色器组合物包含粘合剂和预定比例的单体的混合物，颜料和溶剂。 预定比例是粘合剂与单体的比例，为约50:50至约60:40。 滤色器组合物还包含在滤色器组合物中重量百分数为约12％至约18％的固体粉末，其中固体粉末包括颜料。 颜料的固体粉末的重量百分比范围为约28％至约38％。

    Manufacturing method of a color filter substrate
    37.
    发明授权
    Manufacturing method of a color filter substrate 有权
    滤色器基板的制造方法

    公开(公告)号：US06177215B1

    公开(公告)日：2001-01-23

    申请号：US09157398

    申请日：1998-09-21

    申请人： Sung-Ki Jung ,  Dong-Uk Choi

    发明人： Sung-Ki Jung ,  Dong-Uk Choi

    IPC分类号： G02B520

    CPC分类号： G02F1/133512 ,  G02F1/133516 ,  G02F1/13439

    摘要： A light-blocking black matrix is applied to a transparent substrate, then several coats of negative photoresists, with optimal spectral properties, are applied over the black matrix to create red, blue and green color filters. Then, the surface of the black matrix and the red, blue and green filters are preheated using infrared (IR) rays to remove any residual moisture or gas. Next, the surfaces of the black matrix and color filters are irradiated by ultraviolet (U.V.) rays to remove pigment residue remaining on the black matrix. This is followed by a UV irradiating step in which high-density ozone molecules (O3) are injected into a UV chamber and any final traces of pigment remaining on the surface are dissolved and volatilized in reaction to active oxygen from the ozone.

    摘要翻译： 将遮光黑色矩阵施加到透明基底上，然后将多个具有最佳光谱特性的负光致抗蚀剂涂层施加在黑色矩阵上以产生红色，蓝色和绿色滤色器。 然后，使用红外（IR）射线对黑色矩阵和红色，蓝色和绿色滤光片的表面进行预热，以除去任何残留的水分或气体。 接着，用紫外线（紫外线）照射黑色矩阵和滤色器的表面，以除去残留在黑色矩阵上的色素残留物。 然后进行紫外线照射步骤，其中将高密度臭氧分子（O3）注入UV室中，并且表面上残留的任何最终痕迹的颜料溶解并与来自臭氧的活性氧反应而挥发。