Abstract:
A semiconductor package uses various forms of conductive traces that connect to die bond pads via bond wires. In one form, adjacent bond wires are intentionally crossed around midpoints thereof to reduce self-inductance of the conductors and to minimize self-inductance. In another form, bond wires associated with bond pads having intervening, unrelated bond pads are crossed. Additionally, conductive traces are divided into separate sections and electrically connected by crossed jumper wires or bond wires. Any number of separate sections may be formed for each trace, but an even number is preferable. In another form, one trace is continuous and divides a second trace into two or more sections. The multiple sections are connected by an overlying bond wire. Either insulated or non-insulated bond wire may be used.
Abstract:
A semiconductor device has a die (10) overlying and electrically connected to a support structure (11), such as a substrate or a lead frame, via a plurality of interconnects. Aggressor interconnects (32, 38) are noise sources to victim interconnects (29, 59) carrying sensitive signals. An arrangement of shield interconnects (51-58) surround the victim interconnect (29, 59) in a cage-like structure to significantly block noise from the aggressor interconnect. In one form the shield interconnects are ground or power supply and the victim interconnect may be, for example, a clock signal or an RF signal. The number of shield interconnects and the number of protected victim interconnects varies depending upon design requirements. Either wire bonding or other interconnect technology (e.g. bump) is applicable.