Nonwoven fabrics
    32.
    发明授权
    Nonwoven fabrics 失效
    无纺布

    公开(公告)号:US4409282A

    公开(公告)日:1983-10-11

    申请号:US401289

    申请日:1982-07-22

    摘要: A bulky nonwoven fabric comprises fine fibers forming thin intertwined layers extending between one surface of the fabric and the other surface, that is, the layered fibers run in the direction of thickness of the fabric. The nonwoven fabric of thermoplastic resin is prepared by a melt-blowing process utilizing a drum collector and cooperating nip-roll. If desired the fiber and gas stream may be contacted with fine liquid drops.

    摘要翻译: 蓬松的非织造布包括细纤维,其形成在织物的一个表面和另一个表面之间延伸的薄的缠绕层,即层状纤维沿着织物的厚度方向延伸。 热塑性树脂的非织造织物通过利用鼓收集器和配合的夹辊的熔喷方法来制备。 如果需要,纤维和气流可以与细液滴接触。

    Television enlarging display apparatus for graphic material
    34.
    发明授权
    Television enlarging display apparatus for graphic material 失效
    电视放大显示装置的图形材料

    公开(公告)号:US4115813A

    公开(公告)日:1978-09-19

    申请号:US819395

    申请日:1977-07-27

    申请人: Takashi Mikami

    发明人: Takashi Mikami

    IPC分类号: H04N1/10 H04N5/65 H04N7/18

    摘要: Optical apparatus for displaying enlargements of graphic copy includes a platform carrying a television camera having an optical pickup lens. The platform is rotatable on a horizontal axis. An arm is secured to the platform and extends downwardly toward the copy. A frame is pivotably secured to the arm to bear on the copy and outline an image scanning field. A mirror is pivotably secured to the platform and is adjustable in an optical path including the lens and frame. The platform has depending legs carrying wheels or casters. A handle on the arm facilitates lifting the frame off the copy and moving the apparatus in a horizontal plane.

    摘要翻译: 用于显示图形副本的放大的光学装置包括载有具有光学拾取透镜的电视摄像机的平台。 平台可在水平轴上旋转。 一个手臂固定在平台上,并朝向副本向下延伸。 框架可枢转地固定到臂上以承载在副本上并且勾画出图像扫描场。 镜子可枢转地固定到平台上并且可在包括透镜和框架的光学路径中调节。 平台具有支撑轮子或脚轮的悬挂腿。 手臂上的手柄有助于将框架从复印件上提起并将其移动到水平面。

    Reverberation suppression device
    35.
    发明授权
    Reverberation suppression device 有权
    混响抑制装置

    公开(公告)号:US09437179B2

    公开(公告)日:2016-09-06

    申请号:US14238478

    申请日:2012-01-30

    摘要: A reverberation suppression device comprises: an echo canceller that removes an echo component included in an input signal; a howling suppressor that detects occurrence of howling based on a frequency characteristic of the input signal from which the echo component has been removed and attenuates a frequency level of a component of the detected howling; and an initial sound suppressor that detects a sound section of the input signal in which the frequency level of the howling component has been attenuated and suppresses a signal value at a sound start portion of the detected sound section.

    摘要翻译: 混响抑制装置包括:回波消除器,其去除包括在输入信号中的回波分量; 啸声抑制器,其基于已经从其去除了回波分量的输入信号的频率特性来检测啸叫的发生,并且衰减检测到的啸声的分量的频率水平; 以及初始声音抑制器,其检测所述啸叫声成分的频率水平已被衰减的输入信号的声音部分,并且抑制所检测的声音部分的声音起始部分处的信号值。

    REVERBERATION SUPPRESSION DEVICE
    36.
    发明申请
    REVERBERATION SUPPRESSION DEVICE 有权
    反转抑制装置

    公开(公告)号:US20140192993A1

    公开(公告)日:2014-07-10

    申请号:US14238478

    申请日:2012-01-30

    IPC分类号: G10K11/00

    摘要: A reverberation suppression device comprises: an echo canceller that removes an echo component included in an input signal; a howling suppressor that detects occurrence of howling based on a frequency characteristic of the input signal from which the echo component has been removed and attenuates a frequency level of a component of the detected howling; and an initial sound suppressor that detects a sound section of the input signal in which the frequency level of the howling component has been attenuated and suppresses a signal value at a sound start portion of the detected sound section.

    摘要翻译: 混响抑制装置包括:回波消除器,其去除包括在输入信号中的回波分量; 啸声抑制器,其基于已经从其去除了回波分量的输入信号的频率特性来检测啸叫的发生,并且衰减检测到的啸声的分量的频率水平; 以及初始声音抑制器,其检测所述啸叫声成分的频率水平已被衰减的输入信号的声音部分,并且抑制所检测的声音部分的声音起始部分处的信号值。

    Silicon object forming method and apparatus
    37.
    发明授权
    Silicon object forming method and apparatus 失效
    硅体形成方法和装置

    公开(公告)号:US07887677B2

    公开(公告)日:2011-02-15

    申请号:US11524207

    申请日:2006-09-21

    IPC分类号: C23C14/34

    摘要: A silicon object formation target substrate is arranged in a first chamber, a silicon sputter target is arranged in a second chamber communicated with the first chamber, plasma for chemical sputtering is formed from a hydrogen gas in the second chamber, chemical sputtering is effected on the silicon sputter target with the plasma thus formed, producing particles contributing to formation of silicon object, whereby a silicon object is formed, on the substrate, from the particles moved from the second chamber to the first chamber.

    摘要翻译: 硅物体形成目标衬底被布置在第一腔室中,硅溅射靶设置在与第一腔室连通的第二室中,用于化学溅射的等离子体由第二腔室中的氢气形成,化学溅射 由此形成等离子体的硅溅射靶,产生有助于硅物体形成的颗粒,由此在从第二室移动到第一室的颗粒的基底上形成硅物体。

    Silicon dot forming method and silicon dot forming apparatus
    40.
    发明申请
    Silicon dot forming method and silicon dot forming apparatus 失效
    硅点形成方法和硅点形成装置

    公开(公告)号:US20070007123A1

    公开(公告)日:2007-01-11

    申请号:US11519154

    申请日:2006-09-12

    IPC分类号: C23C14/32 C23C14/00

    摘要: There are provided a method and an apparatus which form silicon dots having substantially uniform particle diameters and exhibiting a substantially uniform density distribution directly on a substrate at a low temperature. A hydrogen gas (or a hydrogen gas and a silane-containing gas) is supplied into a vacuum chamber (1) provided with a silicon sputter target (e.g., target 30), or the hydrogen gas and the silane-containing gas are supplied into the chamber (1) without arranging the silicon sputter target therein, a high-frequency power is applied to the gas(es) so that plasma is generated such that a ratio (Si(288 nm)/Hβ) between an emission intensity Si(288 nm) of silicon atoms at a wavelength of 288 nm and an emission intensity Hβ of hydrogen atoms at a wavelength of 484 nm in plasma emission is 10.0 or lower, and preferably 3.0 or lower, or 0.5 or lower, and silicon dots (SiD) having particle diameters of 20 nm or lower, or 10 nm or lower are formed directly on the substrate (S) at a low temperature of 500 deg. C. or lower in the plasma (and with chemical sputtering if a silicon sputter target is present).

    摘要翻译: 提供了形成具有基本上均匀的粒径并且在低温下直接在基底上表现出基本均匀的密度分布的硅点的方法和装置。 将氢气(或氢气和含硅烷气体)供给到设置有硅溅射靶(例如,靶30)的真空室(1)中,或者将氢气和含硅烷的气体供应到 在不将硅溅射靶设置在其中的腔室(1)中,向气体施加高频功率,从而产生等离子体,使得发射强度Si(((nm)/ Hbeta) 288nm波长的硅原子和等离子体发射波长为484nm的氢原子的发光强度Hbeta为10.0以下,优选为3.0以下,0.5以下,硅点(SiD ),在500度的低温下直接在基板(S)上形成粒径为20nm以下或10nm以下的粒径。 在等离子体中(如果存在硅溅射靶,则具有化学溅射)。