Cosmetic ingredient and cosmetic composition containing the same
    34.
    发明申请
    Cosmetic ingredient and cosmetic composition containing the same 审中-公开
    化妆品成分和含有它的化妆品组合物

    公开(公告)号:US20080220033A1

    公开(公告)日:2008-09-11

    申请号:US12073675

    申请日:2008-03-07

    IPC分类号: A61K9/16 A61Q99/00

    摘要: The invention provides a cosmetic ingredient and cosmetic compositions containing the same that exhibit skin protection/recovery properties and which are suitable for use in various cosmetic forms, such as skin care cosmetics, makeup cosmetics and skin cleansing agents. The cosmetic ingredient and cosmetic compositions containing the same include spherical sulfated cellulose or a salt thereof prepared by sulfate esterification of a part of the hydroxy groups of spherical cellulose.

    摘要翻译: 本发明提供含有其具有皮肤保护/恢复性能并且适合用于各种化妆品形式的化妆品成分和化妆品组合物,例如护肤化妆品,化妆化妆品和皮肤清洁剂。 含有它们的化妆品成分和化妆品组合物包括通过一部分球形纤维素的羟基的硫酸酯化制备的球形硫酸纤维素或其盐。

    Spherical sulfated cellulose and production process for the same
    35.
    发明申请
    Spherical sulfated cellulose and production process for the same 审中-公开
    球形硫酸纤维素和生产工艺相同

    公开(公告)号:US20070049746A1

    公开(公告)日:2007-03-01

    申请号:US11513110

    申请日:2006-08-31

    IPC分类号: C08B13/00

    摘要: The invention provides spherical sulfated cellulose which has a high sulfur content and which is excellent for adsorbing proteins, a production process for the same, a protein adsorbing agent containing the above spherical sulfated cellulose and a chromatography apparatus using the same for a filler. More specifically, the invention provides a process for producing spherical sulfated cellulose comprising a step in which spherical cellulose is subjected to at least one sulfate esterification treatment with a mixture of N,N-dimethylformamide and sulfuric anhydride.

    摘要翻译: 本发明提供了具有高硫含量,对于吸附蛋白质,其制备方法,含有上述球形硫酸化纤维素的蛋白质吸附剂和使用该球形硫酸纤维素的色谱装置的球形硫酸纤维素。 更具体地,本发明提供了一种制备球形硫酸纤维素的方法,其包括使用N,N-二甲基甲酰胺和硫酸酐的混合物对球形纤维素进行至少一种硫酸酯酯化处理的步骤。

    Process for exactly transferring latent images in photo-resist layer
nonuniform in thickness in fabrication of semiconductor integrated
circuit device
    38.
    发明授权
    Process for exactly transferring latent images in photo-resist layer nonuniform in thickness in fabrication of semiconductor integrated circuit device 有权
    在半导体集成电路器件的制造中,在厚度不均匀的光致抗蚀剂层中精确地转印潜像的方法

    公开(公告)号:US6093598A

    公开(公告)日:2000-07-25

    申请号:US206193

    申请日:1998-12-04

    申请人: Naoyuki Yoshida

    发明人: Naoyuki Yoshida

    摘要: A semiconductor stacked type dynamic random access memory device has a node contact hole formed in an inter-level insulating layer and a storage electrode held in contact with a source region of an access transistor through the node contact hole, and the node contact hole and the storage electrode are patterned by using a photo-lithography and an etching, wherein a photo-resist mask for the node contact hole is different in thickness from a photo-resist mask for the storage electrode by value equivalent to a half of the period of the periodicity representative of sensitized characteristics of the photo-resist in the presence of an optical standing wave in the photo-resist masks, thereby keeping the nesting tolerance between the two patterns.

    摘要翻译: 半导体堆叠型动态随机存取存储器件具有形成在层间绝缘层中的节点接触孔和通过节点接触孔与存取晶体管的源极区域保持接触的存储电极,并且节点接触孔和 存储电极通过光刻和蚀刻进行图案化,其中用于节点接触孔的光致抗蚀剂掩模的厚度与用于存储电极的光致抗蚀剂掩模的厚度不同,相当于 在光阻掩模中存在光驻波的情况下代表光刻胶的敏化特性的周期性,从而保持两种图案之间的嵌套公差。

    Method of manufacturing semiconductor device
    39.
    发明授权
    Method of manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号:US06057190A

    公开(公告)日:2000-05-02

    申请号:US880989

    申请日:1997-06-23

    申请人: Naoyuki Yoshida

    发明人: Naoyuki Yoshida

    CPC分类号: H01L27/10852 H01L27/10817

    摘要: In a semiconductor device manufacturing method, a first insulating film is formed on a semiconductor substrate. A contact hole is selectively formed in the first insulating film. A first conductive film is formed on the first insulating film to fill the interior of the contact hole. A second insulating film is formed on the first conductive film. A second conductive film is formed on the second insulating film. The second insulating film and the second conductive film are patterned to leave the second insulating film and the second conductive film only immediately above the contact hole. A third conductive film is formed on the surfaces of the first conductive film, the second insulating film, and the second conductive film. The third conductive film on the first and second conductive films is removed to form a cylindrical lower electrode consisting of the third conductive film left only on the side surfaces of the second insulating film and the second conductive film. An exposed portion of the first conductive film and the second conductive film are removed to expose the first and second insulating films. The second insulating film is removed to expose the first conductive film. A third insulating film and a fourth insulating film serving as an upper electrode are formed.

    摘要翻译: 在半导体器件制造方法中,在半导体衬底上形成第一绝缘膜。 在第一绝缘膜中选择性地形成接触孔。 在第一绝缘膜上形成第一导电膜以填充接触孔的内部。 在第一导电膜上形成第二绝缘膜。 在第二绝缘膜上形成第二导电膜。 图案化第二绝缘膜和第二导电膜,使第二绝缘膜和第二导电膜仅在接触孔的正上方。 在第一导电膜,第二绝缘膜和第二导电膜的表面上形成第三导电膜。 除去第一导电膜和第二导电膜上的第三导电膜,以形成由仅在第二绝缘膜和第二导电膜的侧表面上留下的第三导电膜构成的圆柱形下电极。 去除第一导电膜和第二导电膜的暴露部分以露出第一和第二绝缘膜。 去除第二绝缘膜以露出第一导电膜。 形成作为上电极的第三绝缘膜和第四绝缘膜。