Abstract:
A semiconductor device has a first semiconductor layer composed of a group III–V nitride, an oxide film formed by oxidizing a second semiconductor layer composed of a group III–V nitride to be located on the gate electrode formation region of the first semiconductor layer, an insulating film formed on the oxide film to have a composition different from the composition of the oxide film, and a gate electrode formed on the insulating film.
Abstract:
An image forming apparatus is disclosed that is capable of making it simple to initialize a laser system thereof. The image forming apparatus includes a first photo detector that detects a part of a laser beam from each of the lasers and generates respective power adjustment signals for the lasers, a second photo detector that detects another part of the scanning laser beam of each of the lasers and generates a synchronization signal corresponding to each laser, and a power adjustment control unit that changes the output power of each of the lasers to a predetermined value. During the adjustment of output powers of the lasers, the power of a laser is monitored by using the synchronization signal. The power adjustment control unit turns on a laser for power adjustment, and turns off the laser when the scanning synchronization signal is detected twice to complete the power adjustment of the laser, and then starts power adjustment of the next laser.
Abstract:
An image forming apparatus shifts a scanning position on a surface scanned of each of a plurality of optical beams in a main scanning direction and a sub-scanning direction, and scans a plurality of lines simultaneously in the main scanning direction by a deflecting part. A synchronization detecting sensor detects the plurality of optical beams. A counting part counts a clock having a higher frequency than a dot clock in an interval between a synchronization detection point of a first beam and a synchronization detection point of a second beam, the first and second beams being included in the optical beams detected by the synchronization detecting sensor. A determining part determines a starting position of writing for each of the plurality of optical beams based on a counted value counted by the counting part. A writing part writes each dot from the starting position of each of the plurality of optical beams determined by the determining part, according to the clock having the higher frequency than the dot clock.
Abstract:
The semiconductor device of the present invention includes: a gallium nitride (GaN) compound semiconductor layer; and a Schottky electrode formed on the GaN compound semiconductor layer, wherein the Schottky electrode contains silicon.
Abstract:
A semiconductor device has an active region composed of a group III-V nitride semiconductor and ohmic electrodes and a gate electrode each formed on the active region. The active region has an entire surface thereof exposed to a plasma such that a surface potential for electrons therein is lower than in the case where the entire surface is not exposed to the plasma.
Abstract:
An insulating-gate semiconductor device has a first nitride semiconductor layer formed over a substrate and an insulating oxidation layer obtained by oxidizing a second nitride semiconductor layer formed on the first nitride semiconductor layer. A gate electrode is formed on the insulating oxidation layer.
Abstract:
A magnetic tunnelling element in which the tunnel current flows reliably in an insulating layer to exhibit a stable magnetic tunnelling effect. To this end, the magnetic tunnelling element at least includes a first magnetic layer, a tunnel barrier layer formed on the first magnetic layer and a second magnetic layer formed on the tunnel barrier layer. The tunnel current flows via the tunnel barrier layer between the first magnetic metal layer and the second magnetic metal layer. The surface of the first magnetic layer carrying the tunnel barrier layer has a surface roughness (Ra) of 0.3 nm or less.
Abstract:
A magnetic head reduces a slant of a magnetic head chip in comparison with a conventional case. The magnetic head is produced by a manufacturing method. A ridge on a back surface side of a magnetic chip is brought into contact with a chip attachment surface of a chip attachment base. A height of the magnetic head chip is adjusted by using the ridge as a fulcrum.
Abstract:
In a magnetic head having a pair of magnetic cores defining a magnetic gap in-between, a side of each magnetic core facing a recording medium is formed of a single-crystal ferrite, with the remaining portions of each magnetic core being formed of poly-crystal ferrite. The surface of the magnetic core facing the recording medium and the abutment surface of the magnetic core are the {100} plane and the {100} plane of the single-crystal ferrite, respectively. The magnetic head has excellent abrasion resistance and electro-magnetic conversion characteristics.
Abstract:
A communication device that, when incorporated in an electronic device, can reduce the size and the thickness of a housing of the electronic device while maintaining communication characteristics. The communication device includes an antenna coil that is arranged on a peripheral part of a housing surface facing a reader-writer of a mobile phone, a magnetic sheet that attracts the magnetic filed transmitted from the reader-writer to the antenna coil, and a communication processing unit that is driven by a current flowing through the antenna coil and communicates with the reader-writer. The magnetic sheet is arranged to be closer to reader-writer than the antenna coil in the central part, and the antenna coil is arranged to be closer to the reader-writer on the outer periphery side, and at least a part of the conductive line of the antenna coil is superimposed in a direction orthogonal to a circuit board.