摘要:
Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.
摘要:
A solid-state imaging device for enlarging an operating margin of a pixel portion and achieving complete transfer of a signal charge by using a plurality of power supply voltages, wherein a plurality of power supplies having different power supply voltage values are supplied to portions of a semiconductor chip 1. For example, as a first power supply system, a first digital power supply voltage (DVDD1) is supplied from a power supply terminal 45, a first digital ground voltage (DVSS1) is supplied from a power supply terminal 46, a second digital power supply voltage (DVDD2) is supplied from a power supply terminal 47, a second digital ground voltage (DVSS2) is supplied from a power supply terminal 48, a third digital power supply (DVDD3) is supplied from a power supply terminal 49, and a third digital ground voltage (DVSS3) is supplied from a power supply terminal 50, and as a second power supply system, a first analog power supply voltage (AVDD1) is supplied from a power supply terminal 40, a first analog ground voltage (AVSS1) is supplied from a power supply terminal 41, a second analog power supply voltage (AVDD2) is supplied from a power supply terminal 42, and a second analog ground voltage (AVSS2) is supplied from a power supply terminal 43.
摘要:
Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.
摘要:
A digital signal processing apparatus for processing a plurality of video signals and a plurality of audio signals is provided, and comprises a computer comprising a system bus and a main CPU connected to the system bus and an extension processor comprising a plurality of signal processing circuits for processing the plurality of video signals and/or the plurality of audio signals, and a local CPU for controlling the plurality of signal processing circuits so as to allow for the processing of the video signals and audio signals in real time. The extension processor further comprises an extension system bus extended from the system bus, a digital audio video (DAV) bus for transmitting the plurality of video signals and the plurality of audio signals between the plurality of signal processing circuits and a local CPU bus for transmitting control signals outputted from the local CPU. Each processing circuit has a common interface which is capable of being connected to the extension system bus, the DAV bus and the local CPU bus in any position, thereby allowing for the processing of the video signals and audio signals regardless of the mounting positions of the processing circuits.
摘要:
Disclosed is a precise grinding grindstone in which the-heights of the grinding particles can be aligned even if large particles are employed. An underlying plated layer is formed on a substrate, and grinding particles are dispersed as a single layer thereon. The grinding particles are pressed toward the plated layer by a mold member and are partly pressed into the plated layer, whereby the heights of the grinding particles are aligned. Then, the particles are supported by a binding plated layer. The protrusion of the particles can be arbitrarily selected by regulating the thickness of the binding plated layer.
摘要:
A glass or ceramic plate, which may be foamed glass or ceramic plate, is reinforced by incorporating therein a thin reinforcement layer in which fibrous or flaky pieces of an inorganic heat-resistant reinforcing material such as, e.g., steel wire pieces 3 to 50 mm in length are scattered so as to be two-dimensionally randomly oriented. The reinforcement layer is parallel to two opposite major surfaces of the plate, and this layer is either a buried layer or a surface layer. The plate may have a plurality of reinforcement layers which are distant from each other. In any case the reinforcing material exists only in the reinforcement layer(s). The glass or ceramic plate can be produced by the steps of layering a particulate material of the glass or ceramic on a conveyor belt made of a heat-resistant material, scattering fibrous or flaky pieces of a reinforcing material on the surface of the layer of the particulate material, overlaying that surface with the particulate material if need be, and firing the material on the conveyor belt in a furnace. =
摘要:
A solar cell including at least a thin film formed of an amorphous silicon material and having p-type conductivity. The thin film comprises a multi-layer structure including at least one non-doped layer formed of a material of an amorphous silicon material and having a thickness of 10 to 300 .ANG. and at least one p-type doped amorphous silicon layer of a given thickness. The p-type doped amorphous silicon layer is stacked such that at least one face thereof is in contact with said at least one non-doped layer of amorphous silicon material so that the thin film of multi-layer structure exhibits in effect p-type conductivity.
摘要:
An optical glass forming apparatus for molding an optical element such as a lens by pressurizing optical glass, wherein a mold for molding one functional surface (optically functional surface) of the optical element is designed to be urged against the upper edge portion of a mold for forming the other functional surface of the optical element.
摘要:
An optical reader system includes a plurality of sensor elements for providing a picture signal. Before initiating an actual reading operation, a white background plate is scanned to obtain reference information. The white background plate data is reversed to obtain a reciprocal of the white level and the thus obtained reciprocal is memorized in a memory. In an actual reading operation, the picture signal derived from the sensor elements is multiplied by the reciprocal memorized in the memory to compensate for the nonuniformity of the sensor outputs.
摘要:
A bismuth-substituted rare-earth iron garnet crystal film (RIG) which has an insertion loss of less than 0.6 dB and which can be produced in a high yield, as well as an optical isolator, which is grown by liquid phase epitaxy on a non-magnetic garnet substrate represented by a chemical formula of Gd3(ScGa)5O12, wherein the RIG is represented by a chemical formula of Nd3-x-yGdxBiyFe5O12, and x and y satisfy 0.89≦x≦1.43 and 0.85≦y≦1.19. In contrast to conventional RIGs, the RIG represented by the chemical formula of Nd3-x-yGdxBiyFe5O12 of the present invention has an insertion loss of less than 0.6 dB and makes it possible to reduce the amount of heat generated because of absorption of light at wavelengths of about 1 μm. Hence, the RIG has such a remarkable effect that the RIG can be used as a Faraday rotator used for an optical isolator in a high-power laser device for processing.
摘要翻译:具有小于0.6dB的插入损耗并且可以高产率生产的铋取代的稀土铁石榴石晶体膜(RIG)以及通过液相外延生长的光隔离器 由Gd 3(ScGa)5 O 12化学式表示的非磁性石榴石基材,其中RIG由化学式Nd 3-x-yGd x B y Fe 5 O 12表示,x和y满足0.89≦̸ x≦̸ 1.43和0.85≦̸ y≦̸ 1.19。 与传统的RIG相反,本发明的Nd3-x-yGdxBiyFe5O12化学式表示的RIG具有小于0.6dB的插入损耗,并且可以减少由于波长吸收光而产生的热量 约1μm。 因此,RIG具有如此显着的效果,RIG可用作用于高功率激光装置中用于光隔离器的法拉第旋转器用于处理。