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31.发明授权Onium salts, photoacid generators for resist compositions, resist compositions, and patterning process 有权用于抗蚀剂组合物的鎓盐，光酸产生剂，抗蚀剂组合物和图案化方法公开(公告)号：US06440634B1
公开(公告)日：2002-08-27
申请号：US09637363
申请日：2000-08-15
申请人： Youichi Ohsawa , Jun Watanabe , Wataru Kusaki , Satoshi Watanabe , Takeshi Nagata , Shigehiro Nagura
发明人： Youichi Ohsawa , Jun Watanabe , Wataru Kusaki , Satoshi Watanabe , Takeshi Nagata , Shigehiro Nagura
IPC分类号： G03F7004
CPC分类号： C07C309/73 , C07C309/71 , C07C381/12 , C07C2602/42 , G03F7/0045 , G03F7/039 , Y10S430/115 , Y10S430/122
摘要： Onium salts of the formula (1) are novel. R1 is C1-10 alkyl or C6-14 aryl, R2 is H or C1-6 alkyl, p is an integer of 1 to 5, q is an integer of 0 to 4, p+q=5, R3 is C1-10 alkyl or C6-14 aryl, M is a sulfur or iodine atom, and “a” is equal to 3 or 2. A chemical amplification type resist composition comprising the onium salt as a photoacid generator is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution, minimized line width variation or shape degradation even on long-term PED, minimized defect after coating, development and stripping, and improved pattern profile after development.
摘要翻译： 式（1）的鎓盐是新的，R 1是C 1-10烷基或C 6-14芳基，R 2是H或C 1-6烷基，p是1至5的整数，q是0至4的整数， p + q = 5，R3是C1-10烷基或C6-14芳基，M是硫或碘原子，“a”等于3或2.包含鎓盐作为光酸的化学放大型抗蚀剂组合物 发生器适用于微细加工，特别是通过深紫外光刻，因为许多优点，包括改进的分辨率，最小化线宽变化或形状退化，即使长期PED，最小化涂层后的缺陷，显影和剥离，以及改进的图案轮廓。
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32.发明授权Onium salts, photoacid generators, resist compositions, and patterning process 有权鎓盐，光酸产生剂，抗蚀剂组合物和图案化方法公开(公告)号：US06416928B1
公开(公告)日：2002-07-09
申请号：US09680491
申请日：2000-10-05
IPC分类号： G03F7004
CPC分类号： C07C381/12 , C07C309/32 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/0397 , Y10S430/115 , Y10S430/122
摘要： Onium salts of substituted phenylmethylbenzene-sulfonate anions with iodonium or sulfonium cations are novel. A chemically amplified resist composition comprising the onium salt as a photoacid generator is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution, minimized line width variation or shape degradation even on long-term PED, minimized defect after coating, development and peeling, and improved pattern profile after development.
摘要翻译： 取代的苯甲基苯磺酸盐阴离子与碘鎓或锍阳离子的鎓盐是新颖的。 包含作为光致酸发生剂的鎓盐的化学放大抗蚀剂组合物特别适用于微细加工，特别是通过深紫外光刻技术，适用于微细加工，因为即使长期PED，涂布后的最小化缺陷，包括改进的分辨率，最小化的线宽变化或形状劣化， 开发和剥皮，改进后的图案轮廓。
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33.发明授权Chemically amplified positive photoresist composition and pattern forming process 有权化学扩增正光致抗蚀剂组合物和图案形成工艺公开(公告)号：US08361693B2
公开(公告)日：2013-01-29
申请号：US12815787
申请日：2010-06-15
申请人： Keiichi Masunaga , Akinobu Tanaka , Daisuke Domon , Satoshi Watanabe , Youichi Ohsawa , Masaki Ohashi
发明人： Keiichi Masunaga , Akinobu Tanaka , Daisuke Domon , Satoshi Watanabe , Youichi Ohsawa , Masaki Ohashi
CPC分类号： G03F7/0392 , G03F7/0045
摘要： A polymer comprising a high proportion of aromatic ring structure-containing units and containing an aromatic sulfonic acid sulfonium salt on a side chain is used to form a chemically amplified positive photoresist composition which is effective in forming a resist pattern having high etch resistance. The polymer overcomes the problems of dissolution in solvents for polymerization and purification and in resist solvents.
摘要翻译： 使用包含高比例的含芳环结构的单元并在侧链上含有芳族磺酸锍盐的聚合物形成化学放大的正性光致抗蚀剂组合物，该组合物有效地形成具有高耐蚀刻性的抗蚀剂图案。 该聚合物克服了用于聚合和纯化的溶剂溶解和抗蚀剂溶剂中的问题。
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公开(公告)号：US07312016B2
公开(公告)日：2007-12-25
申请号：US11583041
申请日：2006-10-19
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0392 , Y10S430/106 , Y10S430/108 , Y10S430/111 , Y10S430/123
摘要： A chemically amplified positive resist composition comprising a specific 2,4,6-triisopropylbenzenesulfonate compound as a photoacid generator, a polymer which changes its solubility in an alkaline developer under the action of acid, and a basic compound has a high sensitivity, a high contrast of dissolution of resist film, a high resolution, and good storage stability.
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公开(公告)号：US07288363B2
公开(公告)日：2007-10-30
申请号：US11105457
申请日：2005-04-14
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0392 , Y10S430/106 , Y10S430/108 , Y10S430/111 , Y10S430/123
摘要： A chemically amplified positive resist composition comprising a specific 2,4,6-triisopropylbenzenesulfonate compound as a photoacid generator, a polymer which changes its solubility in an alkaline developer under the action of acid, and a basic compound has a high sensitivity, a high contrast of dissolution of resist film, a high resolution, and good storage stability.
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36.发明授权公开(公告)号：US07090961B2
公开(公告)日：2006-08-15
申请号：US10424269
申请日：2003-04-28
IPC分类号： G03F7/004 , G03F7/039 , C07D327/06
CPC分类号： G03F7/0045 , C07D327/06 , G03F7/0395 , G03F7/0397 , G03F7/0758
摘要： A high resolution resist material comprising an acid generator is provided so that high sensitivity and high resolution for high energy rays of 300 nm or less, small line-edge roughness, and excellence in heat stability and storage stability are obtained. Moreover, a pattern formation method using this resist material are provided. Specifically, a novel compound of the following general formula (1); and a positive resist material comprising this compound preferably as a photo acid generator, and a base resin; are provided. This positive resist material may contain a basic compound or a dissolution inhibitor. Further, the present invention provides a pattern formation method comprising the steps of applying this positive resist material on a substrate, then heat-treating the material, exposing the treated material to a high energy ray having a wavelength of 300 nm or less via a photo mask, optionally heat-treating the exposed material, and developing the material using a developer.
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公开(公告)号：US5679496A
公开(公告)日：1997-10-21
申请号：US566703
申请日：1995-12-04
申请人： Youichi Ohsawa , Satoshi Watanabe , Katsuyuki Oikawa , Akinobu Tanaka , Yoshio Kawai , Jiro Nakamura
发明人： Youichi Ohsawa , Satoshi Watanabe , Katsuyuki Oikawa , Akinobu Tanaka , Yoshio Kawai , Jiro Nakamura
IPC分类号： C07C381/12 , G03F7/004 , H01L21/027 , G03F7/26
CPC分类号： G03F7/0045 , C07C381/12 , Y10S430/106 , Y10S430/111
摘要： A chemically amplified positive resist composition contains a novel trifluoromethanesulfonic or p-toluenesulfonic acid sulfonium salt having at least one tert-butoxycarbonylmethoxy group as an acid labile group. The composition is highly sensitive to high energy radiation, especially KrF excimer laser and has high sensitivity, resolution and plasma etching resistance while the resulting resist pattern is heat resistant.
摘要翻译： 化学放大正型抗蚀剂组合物含有具有至少一个叔丁氧基羰基甲氧基作为酸不稳定基团的新型三氟甲磺酸或对甲苯磺酸锍盐。 该组合物对高能辐射高度敏感，特别是KrF准分子激光器，并且具有高灵敏度，分辨率和等离子体耐蚀刻性，同时产生的抗蚀剂图案是耐热的。
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公开(公告)号：US08795942B2
公开(公告)日：2014-08-05
申请号：US12000284
申请日：2007-12-11
CPC分类号： G03F7/0397 , G03F7/0045
摘要： There is disclosed a resist composition that remarkably improves the resolution of photolithography using a high energy beam such as ArF excimer laser light as a light source, and exhibits excellent resistance to surface roughness and side lobe under use of a halftone phase shift mask; and a patterning process using the resist composition. The positive resist composition at least comprises (A) a resin component comprising a repeating unit represented by the following general formula (1); (B) a photoacid generator generating sulfonic acid represented by the following general formula (2) upon exposure to a high energy beam; and (C) an onium salt where a cation is sulfonium represented by the following general formula (3), or ammonium represented by the following general formula (4); and an anion is represented by any one of the following general formulae (5) to (7).
摘要翻译： 公开了一种抗蚀剂组合物，其使用诸如ArF准分子激光器的高能束作为光源显着地提高了光刻的分辨率，并且在使用半色调相移掩模的情况下表现出优异的抗表面粗糙度和侧凸的性能; 以及使用抗蚀剂组合物的图案化工艺。 正型抗蚀剂组合物至少包含（A）包含由以下通式（1）表示的重复单元的树脂组分; （B）在暴露于高能量束时产生由以下通式（2）表示的磺酸的光酸产生剂; 和（C）鎓盐，其中阳离子是由以下通式（3）表示的锍或由以下通式（4）表示的铵; 并且阴离子由以下通式（5）至（7）中的任一个表示。
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公开(公告)号：US08741554B2
公开(公告)日：2014-06-03
申请号：US12787823
申请日：2010-05-26
CPC分类号： G03F7/70466 , G03F7/0035 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041 , G03F7/38 , G03F7/40 , Y10S430/108 , Y10S430/111
摘要： A pattern is formed by coating a first positive resist composition comprising a base resin, a photoacid generator, and a base generator onto a substrate to form a first resist film, patternwise exposure, PEB, and development to form a first resist pattern, heating the first resist pattern for causing the base generator to generate a base for inactivating the pattern to acid, coating a second positive resist composition comprising a C3-C8 alcohol and an optional C6-C12 ether onto the first resist pattern-bearing substrate to form a second resist film, patternwise exposure, PEB, and development to form a second resist pattern.
摘要翻译： 通过将包含基础树脂，光致酸发生剂和基底发生器的第一正型抗蚀剂组合物涂覆在基材上以形成第一抗蚀剂膜，图案曝光，PEB和显影以形成第一抗蚀剂图案，形成图案，加热 第一抗蚀剂图案，用于使基底发生器产生用于使图案失去酸的碱，将包含C 3 -C 8醇和任选的C 6 -C 12醚的第二正性抗蚀剂组合物涂覆到第一抗蚀剂图案衬底上以形成第二抗蚀剂图案 抗蚀剂膜，图案曝光，PEB和显影以形成第二抗蚀剂图案。
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公开(公告)号：US08628908B2
公开(公告)日：2014-01-14
申请号：US13406684
申请日：2012-02-28
申请人： Takeru Watanabe , Tomohiro Kobayashi , Masayoshi Sagehashi , Takeshi Nagata , Youichi Ohsawa , Ryosuke Taniguchi
发明人： Takeru Watanabe , Tomohiro Kobayashi , Masayoshi Sagehashi , Takeshi Nagata , Youichi Ohsawa , Ryosuke Taniguchi
CPC分类号： G03F7/2041 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/11
摘要： A chemically amplified resist composition is provided comprising (A) a specific tertiary amine compound, (B) a specific acid generator, (C) a base resin having an acidic functional group protected with an acid labile group, which is substantially insoluble in alkaline developer and turns soluble in alkaline developer upon deprotection of the acid labile group, and (D) an organic solvent. The resist composition has a high resolution, improved defect control in the immersion lithography, and good shelf stability.
摘要翻译： 提供一种化学放大抗蚀剂组合物，其包含（A）特定的叔胺化合物，（B）特定的酸发生剂，（C）具有由酸不稳定基团保护的酸性官能团的基础树脂，其基本上不溶于碱性显影剂 并且在酸不稳定基团脱保护时变为可溶于碱性显影剂，和（D）有机溶剂。 抗蚀剂组合物具有高分辨率，改善浸渍光刻中的缺陷控制，以及良好的储存稳定性。
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