公开(公告)号：US08520985B2

公开(公告)日：2013-08-27

申请号：US12975161

申请日：2010-12-21

Applicant: Jeong Woo Park ,  Gyungock Kim

Inventor： Jeong Woo Park ,  Gyungock Kim

IPC: G02F1/025 ,  G02F1/035

CPC classification number: G02F1/025 ,  G02F1/2257 ,  G02F2001/212 ,  G02F2201/12 ,  G02F2202/105

Abstract: Provided is a Mach-Zehnder modulator. The Mach-Zehnder modulator comprises an input wave guide and an output wave guide arranged on a substrate, a first branch wave guide and a second branch wave guide connected in parallel between the input and output wave guides, and a connecting region configured to connect the first branch wave guide and the second branch wave guide. Each of the first and second branch wave guides comprises first doped regions doped with a first dopant and second doped regions doped with a second dopant having different conductivity from the first dopant, and the connecting region is doped with the first dopant and arranged between the first regions of the first and second branch wave guides.

Abstract translation: 提供了马赫 - 曾德尔调制器。 马赫 - 策德尔调制器包括布置在基板上的输入波导和输出波导，在输入和输出波导之间并联连接的第一分支波导和第二分支波导，以及连接区域， 第一分支波导和第二分支波导。 第一和第二分支波导中的每一个包括掺杂有第一掺杂物的第一掺杂区域和掺杂有与第一掺杂剂不同导电性的第二掺杂剂的第二掺杂区域，并且连接区域掺杂有第一掺杂剂并且布置在第一掺杂区域之间 第一和第二分支波导的区域。

公开(公告)号：US20130156369A1

公开(公告)日：2013-06-20

申请号：US13535746

申请日：2012-06-28

Applicant: Sahnggi Park ,  Kap-Joong Kim ,  In Gyoo Kim ,  Gyungock Kim

Inventor： Sahnggi Park ,  Kap-Joong Kim ,  In Gyoo Kim ,  Gyungock Kim

IPC: G02B6/12

CPC classification number: G02B6/12007 ,  G02B2006/12061

Abstract: Provided is a ring resonator including first and second waveguides disposed spaced apart from each other, on a substrate, and at least one channel including at least one ring waveguide arranged in a row between the first and second waveguides. The first and second waveguides and the ring waveguide may be formed of silicon, a width of the ring waveguide may range from 0.7 μm to 1.5 μm, a height of the ring waveguide may range from 150 nm to 300 nm, and a space between the first and second waveguides and the ring waveguide most adjacent thereto may range from 250 nm to 1 mm.

Abstract translation: 提供了一种环形谐振器，包括彼此间隔开地布置在衬底上的第一和第二波导，以及包括在第一和第二波导之间布置成一行的至少一个环形波导的至少一个通道。 第一和第二波导和环形波导可以由硅形成，环形波导的宽度可以在0.7μm到1.5μm的范围内，环形波导的高度可以在150nm到300nm的范围内， 第一和第二波导以及与其最相邻的环形波导可以在250nm至1mm的范围内。

公开(公告)号：US08346027B2

公开(公告)日：2013-01-01

申请号：US12816550

申请日：2010-06-16

Applicant: Jeong Woo Park ,  Jongbum You ,  Gyungock Kim

Inventor： Jeong Woo Park ,  Jongbum You ,  Gyungock Kim

IPC: G02F1/035

CPC classification number: G02F1/2257 ,  G02F1/015 ,  G02F2001/212

Abstract: Provided is an electro-optic device. The electro-optic device includes an input Y-branch comprising a first input branch and a second input branch, an output Y-branch comprising a first output branch and a second output branch, a first optical modulator and a second optical modulator connected in series between the first input branch and the first output branch, and a third optical modulator connecting the second input branch to the second output branch. The first optical modulator comprises a PIN diode, and each of the second optical modulator and the third optical modulator comprises a PN diode.

Abstract translation: 提供了一种电光装置。 电光装置包括：输入Y分支，包括第一输入分支和第二输入分支，包括第一输出分支和第二输出分支的输出Y分支，串联连接的第一光调制器和第二光调制器 在第一输入分支和第一输出分支之间，以及将第二输入分支连接到第二输出分支的第三光调制器。 第一光调制器包括PIN二极管，并且第二光调制器和第三光调制器中的每一个包括PN二极管。

公开(公告)号：US20110304403A1

公开(公告)日：2011-12-15

申请号：US13137267

申请日：2011-08-02

Applicant: Yong-wook Lee ,  Bongjun Kim ,  Sungyoul Choi ,  Jungwook Lim ,  Sun-Jin Yun ,  Byung-Gyu Chae ,  Hyun-Tak Kim ,  Gyungock Kim

Inventor： Yong-wook Lee ,  Bongjun Kim ,  Sungyoul Choi ,  Jungwook Lim ,  Sun-Jin Yun ,  Byung-Gyu Chae ,  Hyun-Tak Kim ,  Gyungock Kim

IPC: H03B7/14

CPC classification number: H01L49/003 ,  H01L29/94 ,  H03B17/00

Abstract: Provided are an oscillatory circuit based on a metal-insulator transition (MIT) device that can generate a simple and very high oscillating frequency using the MIT device, and a method of driving the oscillatory circuit. The oscillatory circuit includes the MIT device that comprises an MIT thin film and an electrode thin film connected to the MIT thin film and in which an abrupt MIT is generated due to an MIT generating voltage, a resistor that is serially connected to the MIT device, an electrical power source limiting the maximum amount of an applied current and applying a direct current constant voltage to the MIT device, and a light source irradiating electromagnetic waves on the MIT device, wherein the oscillating properties are generated by irradiating the electromagnetic waves using the light source.

Abstract translation: 提供了一种基于金属 - 绝缘体转变（MIT）器件的振荡电路，其可以使用MIT器件产生简单且非常高的振荡频率，以及驱动振荡电路的方法。 振荡电路包括MIT设备，其包括MIT薄膜和连接到MIT薄膜的电极薄膜，并且其中由于MIT产生电压而产生突然MIT;串联连接到MIT设备的电阻器， 限制施加电流的最大量并向MIT装置施加直流恒定电压的电源，以及在MIT装置上照射电磁波的光源，其中通过使用光照射电磁波来产生振荡特性 资源。

公开(公告)号：US08031021B2

公开(公告)日：2011-10-04

申请号：US12516105

申请日：2007-10-31

Applicant: Yong-Wook Lee ,  Bongjun Kim ,  Sungyoul Choi ,  Jungwook Lim ,  Sun-Jin Yun ,  Byung-Gyu Chae ,  Hyun-Tak Kim ,  Gyungock Kim

Inventor： Yong-Wook Lee ,  Bongjun Kim ,  Sungyoul Choi ,  Jungwook Lim ,  Sun-Jin Yun ,  Byung-Gyu Chae ,  Hyun-Tak Kim ,  Gyungock Kim

IPC: H03B11/00

CPC classification number: H01L49/003 ,  H01L29/94 ,  H03B17/00

Abstract: Provided are an oscillatory circuit based on a metal-insulator transition (MIT) device that can generate a simple and very high oscillating frequency using the MIT device, and a method of driving the oscillatory circuit. The oscillatory circuit includes the MIT device that comprises an MIT thin film and an electrode thin film connected to the MIT thin film and in which an abrupt MIT is generated due to an MIT generating voltage, a resistor that is serially connected to the MIT device, an electric al power source limiting the maximum amount of an applied current and applying a direct current constant voltage to the MIT device, and a light source irradiating electromagnetic waves on the MIT device, wherein the oscillating properties are generated by irradiating the electromagnetic waves using the light source.

Abstract translation: 提供了一种基于金属 - 绝缘体转变（MIT）器件的振荡电路，其可以使用MIT器件产生简单且非常高的振荡频率，以及驱动振荡电路的方法。 振荡电路包括MIT设备，其包括MIT薄膜和连接到MIT薄膜的电极薄膜，并且其中由于MIT产生电压而产生突然MIT;串联连接到MIT设备的电阻器， 限制施加电流的最大量并向MIT装置施加直流恒定电压的电动电源以及在MIT装置上照射电磁波的光源，其中振荡特性是通过使用 光源。

公开(公告)号：US20110133306A1

公开(公告)日：2011-06-09

申请号：US12788542

申请日：2010-05-27

Applicant: In Gyoo KIM ,  Dae Seo Park ,  Jun Taek Hong ,  Gyungock Kim

Inventor： In Gyoo KIM ,  Dae Seo Park ,  Jun Taek Hong ,  Gyungock Kim

IPC: H01L29/06 ,  H01L21/762

CPC classification number: H01L21/7624 ,  H01L21/76243 ,  H01L21/76264 ,  H01L29/0657

Abstract: Provided are a semiconductor device and a method of forming the same. According to the method, a first buried oxide layer is locally formed in a semiconductor substrate and a core semiconductor pattern of a line form, a pair of anchor-semiconductor patterns and a support-semiconductor pattern are formed by patterning a semiconductor layer on the first buried oxide layer to expose the first buried oxide layer. The pair of anchor-semiconductor patterns contact both ends of the core semiconductor pattern, respectively, and the support-semiconductor pattern contacts one sidewall of the core semiconductor pattern, the first buried oxide layer below the core semiconductor pattern is removed. At this time, a portion of the first buried oxide layer below each of the anchor-semiconductor patterns and a portion of the first buried oxide layer below the support-semiconductor pattern remain. A second buried oxide layer is formed to fill a region where the first buried oxide layer below the core semiconductor pattern.

Abstract translation: 提供半导体器件及其形成方法。 根据该方法，在半导体衬底中局部地形成第一掩埋氧化物层，并且通过在第一衬底上图案化半导体层来形成线形式的芯半导体图案，一对锚半导体图案和支撑半导体图案 埋入氧化物层以暴露第一掩埋氧化物层。 一对锚半导体图案分别接触芯半导体图案的两端，并且支撑半导体图案接触芯半导体图案的一个侧壁，去除芯半导体图案下方的第一掩埋氧化物层。 此时，保留在半导体图案的每一个下面的第一掩埋氧化物层的一部分和位于载体半导体图案之下的第一掩埋氧化物层的一部分。 形成第二掩埋氧化物层以填充在芯半导体图案之下的第一掩埋氧化物层的区域。

公开(公告)号：US07928442B2

公开(公告)日：2011-04-19

申请号：US12441381

申请日：2007-08-17

Applicant: Bongki Mheen ,  Jeong-Woo Park ,  Hyun-Soo Kim ,  Gyungock Kim

Inventor： Bongki Mheen ,  Jeong-Woo Park ,  Hyun-Soo Kim ,  Gyungock Kim

IPC: H01L31/036

CPC classification number: G02F1/025 ,  G02F1/2257 ,  H01L33/0037

Abstract: Provided is an optical device having a strained buried channel area. The optical device includes: a semiconductor substrate of a first conductive type; a gate insulating layer formed on the semiconductor substrate; a gate of a second conductive type opposite to the first conductive type, formed on the gate insulating layer; a high density dopant diffusion area formed in the semiconductor substrate under the gate and doped with a first conductive type dopant having a higher density than the semiconductor substrate; a strained buried channel area formed of a semiconductor material having a different lattice parameter from a material of which the semiconductor substrate is formed and extending between the gate insulating layer and the semiconductor substrate to contact the high density dopant diffusion area; and a semiconductor cap layer formed between the gate insulating layer and the strained buried channel area.

Abstract translation: 提供了具有应变埋入通道区域的光学装置。 该光学器件包括：第一导电类型的半导体衬底; 形成在半导体衬底上的栅极绝缘层; 形成在栅极绝缘层上的与第一导电类型相反的第二导电类型的栅极; 形成在所述半导体衬底下的高密度掺杂剂扩散区，并且掺杂有比所述半导体衬底更高密度的第一导电型掺杂剂; 由半导体材料形成的应变掩埋沟道区域，具有与形成半导体衬底的材料不同的晶格参数，并且在栅极绝缘层和半导体衬底之间延伸以接触高密度掺杂剂扩散区域; 以及形成在栅绝缘层和应变埋入沟道区之间的半导体盖层。

公开(公告)号：US20100044828A1

公开(公告)日：2010-02-25

申请号：US12441377

申请日：2007-04-03

Applicant: Dongwoo Suh ,  Gyungock Kim

Inventor： Dongwoo Suh ,  Gyungock Kim

IPC: H01L29/06

CPC classification number: H01L27/144 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a monolithic integrated composite device including: a silicon substrate which is partitioned into a silicon integrated circuit forming region and a silicon optical device forming region; a buried oxide layer which is formed locally in the silicon substrate of the silicon optical device forming region and isolates unit devices of the silicon optical device forming region; an overlay layer formed locally on the buried oxide layer; a silicon optical device formed in the silicon optical device forming region using the silicon overlay layer; a silicon integrated circuit formed in the silicon integrated circuit forming region of the silicon substrate; and wiring connecting the silicon integrated circuit and the silicon optical device or connecting the silicon optical devices or connecting the silicon integrated circuits.

Abstract translation: 提供了一种单片集成复合器件，包括：分隔成硅集成电路形成区域的硅衬底和硅光学器件形成区域; 在硅光学器件形成区域的硅衬底中局部形成的掩埋氧化物层，并隔离硅光学器件形成区域的单元器件; 在掩埋氧化物层上局部形成的覆盖层; 使用所述硅覆盖层形成在所述硅光学器件形成区域中的硅光学器件; 形成在硅衬底的硅集成电路形成区域中的硅集成电路; 以及连接硅集成电路和硅光学器件或连接硅光学器件或连接硅集成电路的布线。

公开(公告)号：US20090154871A1

公开(公告)日：2009-06-18

申请号：US12117708

申请日：2008-05-08

Applicant: Junghyung PYO ,  O-Kyun Kwon ,  Gyungock Kim

Inventor： Junghyung PYO ,  O-Kyun Kwon ,  Gyungock Kim

IPC: G02B6/12 ,  H01L21/02

CPC classification number: G02B6/34 ,  G02B6/124 ,  G02B6/30

Abstract: Provided are semiconductor integrated circuits including a grating coupler for optical communication and methods of forming the same. The semiconductor integrated circuit includes: a cladding layer disposed on a semiconductor substrate; a grating coupler including an optical waveguide on the cladding layer and a grating on the optical waveguide; and at least one reflector formed in the cladding layer below the grating.

Abstract translation: 提供了包括用于光通信的光栅耦合器的半导体集成电路及其形成方法。 半导体集成电路包括：设置在半导体衬底上的覆层; 包括在所述包层上的光波导的光栅耦合器和所述光波导上的光栅; 以及形成在光栅下方的包覆层中的至少一个反射器。

公开(公告)号：US08948224B2

公开(公告)日：2015-02-03

申请号：US13545889

申请日：2012-07-10

Applicant: In Gyoo Kim ,  Gyungock Kim ,  Sang Hoon Kim ,  JiHo Joo ,  Ki Seok Jang

Inventor： In Gyoo Kim ,  Gyungock Kim ,  Sang Hoon Kim ,  JiHo Joo ,  Ki Seok Jang

IPC: H01L21/00

CPC classification number: H01S5/021 ,  H01S3/0637 ,  H01S5/0205 ,  H01S5/026 ,  H01S5/028 ,  H01S5/1032 ,  H01S5/125 ,  H01S5/2272 ,  H01S5/3027

Abstract: The inventive concept provides semiconductor laser devices and methods of fabricating the same. According to the method, a silicon-crystalline germanium layer for emitting a laser may be formed in a selected region by a selective epitaxial growth (SEG) method. Thus, surface roughness of both ends of a Fabry Perot cavity formed of the silicon-crystalline germanium layer may be reduced or minimized, and a cutting process and a polishing process may be omitted in the method of fabricating the semiconductor laser device.

Abstract translation: 本发明构思提供了半导体激光器件及其制造方法。 根据该方法，可以通过选择性外延生长（SEG）法在选择的区域中形成用于发射激光的硅晶锗层。 因此，可以减少或最小化由硅晶锗层形成的法布里珀罗腔的两端的表面粗糙度，并且在制造半导体激光器件的方法中可以省略切割工艺和抛光工艺。