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    Magnetoresistance effect device, magnetic head therewith, magnetic recording/reproducing head, and magnetic storing apparatus
    32.
    发明授权
    Magnetoresistance effect device, magnetic head therewith, magnetic recording/reproducing head, and magnetic storing apparatus 失效

    公开(公告)号：US06636399B2

    公开(公告)日：2003-10-21

    申请号：US09927364

    申请日：2001-08-13

    申请人： Hitoshi Iwasaki ,  Yuzo Kamiguchi ,  Hiromi Fuke ,  Kazuhiro Saito ,  Masashi Sahashi

    发明人： Hitoshi Iwasaki ,  Yuzo Kamiguchi ,  Hiromi Fuke ,  Kazuhiro Saito ,  Masashi Sahashi

    IPC分类号： G11B5139

    CPC分类号： H01F10/3268 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/09 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996 ,  H01L27/222 ,  H01L43/08

    摘要： A magnetoresistance effect device comprises a magnetic multi-layer film having at least an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film, and a second ferromagnetic film formed in the order on the front surface portion of the substrate, the magnetic multi-layer film having giant magnetoresistance effect, at least the second ferromagnetic film having a shape corresponding to a magnetic field detecting portion. The bias magnetic field applying films are disposed on a conductive film of the magnetic multi-layer film at outer portions of both edge portions of the magnetic field detecting portion of the magnetoresistance effective film. Alternatively, the second ferromagnetic film has a first portion corresponding to the magnetic field detecting portion and a second portion corresponding to the outer portions of both the edge portions of the magnetic field detecting portion, the film thickness-of the second portion being smaller than the film thickness of the first portion. The bias magnetic field applying films are formed at the outer portions of both the edge portions of the magnetic field detecting portion of the second ferromagnetic film. With the reversely structured magnetoresistance effect film and the laminate positions of the bias magnetic field applying films, in addition to suppressing the reproduction fringe and Barkhausen noise, the decrease of contact resistance, the suppression of insulation detect, and good linear response characteristic can be accomplished.

    MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD AND MAGNETIC REPRODUCING APPARATUS
    34.
    发明申请
    MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD AND MAGNETIC REPRODUCING APPARATUS 有权
    磁阻效应元件，磁头和磁性再生装置

    公开(公告)号：US20090034134A1

    公开(公告)日：2009-02-05

    申请号：US12236331

    申请日：2008-09-23

    申请人： Hiromi Yuasa ,  Yuzo Kamiguchi ,  Masatoshi Yoshikawa ,  Katsuhiko Koul ,  Hitoshi Iwasaki ,  Tomohiko Nagata ,  Takeo Sakakubo ,  Masashi Sahashi

    发明人： Hiromi Yuasa ,  Yuzo Kamiguchi ,  Masatoshi Yoshikawa ,  Katsuhiko Koul ,  Hitoshi Iwasaki ,  Tomohiko Nagata ,  Takeo Sakakubo ,  Masashi Sahashi

    IPC分类号： G11B5/33

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/30 ,  H01F10/3227 ,  H01F10/3272 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/10

    摘要： A magnetoresistance effect element includes a magnetoresistance effect film including a magnetically pinned layer having a magnetic material film whose direction of magnetization is pinned substantially in one direction, a magnetically free layer having a magnetic material film whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic metal intermediate layer located between said pinned layer and said free layer. The element also includes a pair of electrodes electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of the magnetoresistance effect film. At least one of the pinned layer and the free layer may include a thin-film insertion layer. The nonmagnetic metal intermediate layer includes a resistance adjusting layer including at least one of oxides, nitrides and fluorides, and the thin-film insertion layer includes at least one element selected from the group consisting of iron (Fe), cobalt (Co) and nickel (Ni).

    摘要翻译： 磁阻效应元件包括磁阻效应膜，该磁阻效应膜包括具有磁性材料膜的磁性被钉扎层，该磁性材料膜的磁化方向基本上被固定在一个方向上;磁性层，具有响应于外部磁性的磁化方向变化的磁性材料膜 以及位于所述被钉扎层和所述自由层之间的非磁性金属中间层。 该元件还包括电连接到磁阻效应膜的一对电极，以提供垂直于磁阻效应膜的膜平面的感测电流。 被钉扎层和自由层中的至少一个可以包括薄膜插入层。 非磁性金属中间层包括电阻调节层，其包含氧化物，氮化物和氟化物中的至少一种，薄膜插入层包括选自铁（Fe），钴（Co）和镍中的至少一种元素 （Ni）。

    Magnetoresistive element and magnetic recording apparatus
    36.
    发明授权
    Magnetoresistive element and magnetic recording apparatus 失效
    磁阻元件和磁记录装置

    公开(公告)号：US06348274B1

    公开(公告)日：2002-02-19

    申请号：US09472144

    申请日：1999-12-27

    申请人： Yuzo Kamiguchi ,  Hiromi Yuasa ,  Masashi Sahashi ,  Hitoshi Iwasaki

    发明人： Yuzo Kamiguchi ,  Hiromi Yuasa ,  Masashi Sahashi ,  Hitoshi Iwasaki

    IPC分类号： G11B566

    CPC分类号： H01F10/3263 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/66 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F41/325 ,  Y10S428/90 ,  Y10T428/1107 ,  Y10T428/1171

    摘要： A magnetoresistive element includes a pinned layer, free layer and non-magnetic spacer film between them. The pinned layer is made up of a first ferromagnetic metal layer, first non-metal layer on the first ferromagnetic metal layer, second non-metal layer on the first non-metal layer and different in composition from the first non-metal layer, and second ferromagnetic metal layer on the second non-metal layer. Thus, the magnetoresistive element, which may be used in a magnetic head of a magnetic recording apparatus, ensures a good bias property of the pinned film while maintaining a large MR changing rate of a specular spin valve structure, and it is simultaneously improved in soft magnetic property.

    摘要翻译： 磁阻元件包括它们之间的钉扎层，自由层和非磁性间隔膜。 被钉扎层由第一强磁性金属层，第一铁磁金属层上的第一非金属层，第一非金属层上的第二非金属层和第一非金属层的组成不同而构成，以及 第二非铁金属层上的第二铁磁金属层。 因此，可以用于磁记录装置的磁头中的磁阻元件确保了被钉扎膜的良好的偏置特性，同时保持了镜面自旋阀结构的大的MR变化率，同时在软的 磁性。

    Magneto-resistance effect element and magnetic head
    37.
    发明授权
    Magneto-resistance effect element and magnetic head 失效
    磁阻效应元件和磁头

    公开(公告)号：US6052262A

    公开(公告)日：2000-04-18

    申请号：US38848

    申请日：1998-03-12

    申请人： Yuzo Kamiguchi ,  Akiko Saito ,  Hideaki Fukuzawa ,  Hitoshi Iwasaki ,  Masashi Sahashi

    发明人： Yuzo Kamiguchi ,  Akiko Saito ,  Hideaki Fukuzawa ,  Hitoshi Iwasaki ,  Masashi Sahashi

    IPC分类号： G11B5/012 ,  G11B5/39 ,  H01L43/08

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3967 ,  H01L43/08 ,  G11B2005/3996 ,  G11B5/012

    摘要： A magneto-resistance effect element comprising a spin valve film including a first magnetic layer, a second magnetic layer and a non-magnetic layer interposed between the first magnetic layer and the second magnetic layer. Among the first and the second magnetic layers, in at least one of the magnetic layers, close-packed faces of crystal grains which constitute the magnetic layer are isotropically dispersed. Such a magnetic layer, by setting a film thickness of an under layer having an identical crystal structure with the magnetic layer at 2.0 nm or less and by dispersing isotropically close-packed faces of crystal grains constituting the under layer, can be obtained with reproducibility. According to a magneto-resistance effect element comprising such a spin valve film, while maintaining a large MR change rate, for example, magnetostriction constant can satisfy such a low magnetostriction as 1.times.10.sup.-6 or less. Further, excellent soft magnetic property can be provided.

    摘要翻译： 一种磁电阻效应元件，包括自旋阀膜，该自旋阀膜包括介于第一磁性层和第二磁性层之间的第一磁性层，第二磁性层和非磁性层。 在第一和第二磁性层中，在至少一个磁性层中，构成磁性层的晶粒的紧密堆积面各向同性地分散。 通过将具有与磁性层相同的晶体结构的下层的膜厚设定为2.0nm以下，通过使构成下层的晶粒的各向同性紧密堆积面分散，可以得到这样的磁性层。 根据包含这种自旋阀膜的磁阻效应元件，在保持大的MR变化率的同时，例如，磁致伸缩常数可满足1×10 -6以下的低磁致伸缩性。 此外，可以提供优异的软磁性。

    Magnetoresistance effect element
    40.
    发明授权
    Magnetoresistance effect element 有权
    磁阻效应元件

    公开(公告)号：US6111729A

    公开(公告)日：2000-08-29

    申请号：US313767

    申请日：1999-05-18

    申请人： Yuzo Kamiguchi ,  Akiko Saito ,  Kazuhiro Saito ,  Hideaki Fukuzawa ,  Hitoshi Iwasaki ,  Masashi Sahashi

    发明人： Yuzo Kamiguchi ,  Akiko Saito ,  Kazuhiro Saito ,  Hideaki Fukuzawa ,  Hitoshi Iwasaki ,  Masashi Sahashi

    IPC分类号： G11B5/00 ,  G11B5/39 ,  H01F10/32 ,  H01L43/08

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3909 ,  H01F10/3268 ,  H01L43/08 ,  G11B2005/3996 ,  G11B5/00 ,  G11B5/3967

    摘要： A magnetoresistance effect element provided with a spin valve film composed of a first magnetic layer formed on a metallic buffer layer, a middle non-magnetic layer formed on the first magnetic layer, and a second magnetic layer formed on the non-magnetic layer, has an atomic-diffusion barrier layer whose average thickness is 2 nm or less formed in the interface between the metallic buffer layer and the first magnetic layer. Or a magnetoresistance effect element provided with a spin valve film composed of a first magnetic layer composed of a laminated film of a magnetic undercoat layer and a ferromagnetic layer, a middle non-magnetic layer formed on the first magnetic layer, and a second magnetic layer formed on the middle non-magnetic layer, has an atomic-diffusion barrier layer whose average thickness is 2 nm or less formed in the interface between the magnetic undercoat layer and the ferromagnetic layer.

    摘要翻译： 设置有由形成在金属缓冲层上的第一磁性层，形成在第一磁性层上的中间非磁性层和形成在非磁性层上的第二磁性层构成的自旋阀膜的磁阻效应元件具有 在金属缓冲层和第一磁性层之间的界面形成平均厚度为2nm以下的原子扩散阻挡层。 或设置有由由磁性底涂层和铁磁层的层叠膜构成的第一磁性层，形成在第一磁性层上的中间非磁性层和第二磁性层构成的自旋阀膜的磁阻效应元件 在中间非磁性层上形成的平均厚度为2nm以下的原子扩散阻挡层形成在磁性底涂层和铁磁层之间的界面中。