公开(公告)号：US20130048832A1

公开(公告)日：2013-02-28

申请号：US13637223

申请日：2011-03-25

Applicant: Arnaud Peizerat ,  Yvon Cazaux ,  Michäel Tchagaspanian

Inventor： Arnaud Peizerat ,  Yvon Cazaux ,  Michäel Tchagaspanian

IPC: H01L27/146

CPC classification number: H01L27/14634 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14689 ,  H01L27/1469

Abstract: An imaging device including: plural pixels each including a photodetector; plural reading circuits associated with the plural photodetectors, each reading circuit including a first MOS transistor charging/discharging a photodetector and a second MOS transistor converting charges to be output by the photodetector into voltage; an electronic processing circuit configured to process the voltages outputted by the reading circuits; a first substrate on which are formed the pixels and the reading circuits, and a second substrate, distinct from the first substrate, on which is formed the electronic processing circuit, the second substrate being linked electrically to the first substrate by an electrical interconnection forming an electrical link between the reading circuits and the electronic processing circuit.

Abstract translation: 一种成像装置，包括：多个像素，每个像素包括光电检测器; 与多个光电检测器相关联的多个读取电路，每个读取电路包括对光电检测器进行充电/放电的第一MOS晶体管和将由光电检测器输出的电荷转换为电压的第二MOS晶体管; 电子处理电路，被配置为处理由所述读取电路输出的电压; 其上形成有像素和读取电路的第一衬底和与第一衬底不同的第二衬底，在其上形成电子处理电路，第二衬底通过电互连电连接到第一衬底，形成 读取电路和电子处理电路之间的电连接。

公开(公告)号：US20130009041A1

公开(公告)日：2013-01-10

申请号：US13605685

申请日：2012-09-06

Applicant: Frédéric Barbier ,  Yvon Cazaux

Inventor： Frédéric Barbier ,  Yvon Cazaux

IPC: H01L27/146

CPC classification number: H04N5/3745 ,  H04N5/3597

Abstract: A device for controlling an image sensor including at least one photosensitive cell including a photodiode capable of discharging into a sense node via a first MOS transistor, the sense node being connected to the gate of a second MOS transistor having its source connected to a processing system. The device includes a bias circuit capable of increasing the voltage of the source during the discharge of the photodiode into the sense node.

Abstract translation: 一种用于控制图像传感器的装置，包括至少一个感光单元，该感光单元包括经由第一MOS晶体管能够放电到感测节点的光电二极管，所述感测节点连接到其源极连接到处理系统的第二MOS晶体管的栅极 。 该器件包括偏置电路，其能够在将光电二极管放电到感测节点期间增加源极的电压。

公开(公告)号：US07935559B1

公开(公告)日：2011-05-03

申请号：US12913289

申请日：2010-10-27

Applicant: Benoît Giffard ,  Yvon Cazaux ,  Norbert Moussy

Inventor： Benoît Giffard ,  Yvon Cazaux ,  Norbert Moussy

IPC: H01L21/00

CPC classification number: H01L27/14683 ,  H01L27/14618 ,  H01L27/14627 ,  H01L2924/0002 ,  H01L2924/00

Abstract: This method for producing a non-planar microelectronic component, especially a concave component, involves superposing a layer that contains an active flexible circuit above a cavity shaped according to the desired profile of said component, said cavity being formed in substrate; and applying a pressure difference either side of said layer thereby causing slumping of the flexible circuit into the cavity therefore causing the circuit to assume the shape of the cavity. Superposition of the flexible circuit and the cavity is realized by filling the cavity with a material capable of being selectively removed relative to the substrate and the flexible circuit; then fitting or forming the flexible circuit on the cavity thus filled; then forming at least one feedthrough to access the filled cavity; and by selectively etching the material that fills the cavity via at least one feedthrough in order to remove said material.

Abstract translation: 用于制造非平面微电子部件，特别是凹形部件的该方法涉及将包含活性柔性电路的层叠置在根据所述部件的所需轮廓成型的空腔上方，所述空腔形成在基板中; 并且在所述层的任一侧上施加压力差，从而导致柔性电路塌陷到空腔中，从而使电路呈现空腔的形状。 通过用能够相对于基板和柔性电路选择性地去除的材料填充空腔来实现柔性电路和空腔的叠加; 然后在如此填充的空腔上装配或形成柔性电路; 然后形成至少一个馈通以进入所述填充的空腔; 并且通过选择性地蚀刻通过至少一个馈通填充空腔的材料以便去除所述材料。

公开(公告)号：US20080170147A1

公开(公告)日：2008-07-17

申请号：US11959023

申请日：2007-12-18

Applicant: Frederic Barbier ,  Yvon Cazaux

Inventor： Frederic Barbier ,  Yvon Cazaux

IPC: H04N3/14

CPC classification number: H04N5/3745 ,  H04N5/3597

Abstract: A device for controlling an image sensor including at least one photosensitive cell including a photodiode capable of discharging into a sense node via a first MOS transistor, the sense node being connected to the gate of a second MOS transistor having its source connected to a processing system. The device includes a bias circuit capable of increasing the voltage of the source during the discharge of the photodiode into the sense node.

Abstract translation: 一种用于控制图像传感器的装置，包括至少一个感光单元，该感光单元包括经由第一MOS晶体管能够放电到感测节点的光电二极管，所述感测节点连接到其源极连接到处理系统的第二MOS晶体管的栅极 。 该器件包括偏置电路，其能够在将光电二极管放电到感测节点期间增加源极的电压。

公开(公告)号：US06984817B2

公开(公告)日：2006-01-10

申请号：US10142259

申请日：2002-05-09

Applicant: Yvon Cazaux

Inventor： Yvon Cazaux

IPC: H01L31/00

CPC classification number: H01L27/14609 ,  H01L27/14603 ,  H01L27/14643 ,  H01L31/0352

Abstract: A photodetector formed in an active area of a semiconductor substrate of a first conductivity type, including a MOS transistor and a photodiode formed of the junction between the substrate and a region of a second conductivity type also forming the source of the MOS transistor, a heavily-doped layer of the first conductivity type covering the source region and a portion of the substrate, said portion of the substrate being delimited by an opening of the source region extending in a centered manner from the side of the source region opposite to the channel region of the transistor, towards this channel region.

Abstract translation: 一种形成在第一导电类型的半导体衬底的有源区域中的光电探测器，包括MOS晶体管和由衬底和第二导电类型的区域之间的结的光电二极管形成的MOS光电二极管， 所述第一导电类型的覆盖所述源极区域和所述衬底的一部分的掺杂层的所述部分由所述源极区域的开口限定，所述源极区域以与所述沟道区域相反的所述源极区域的中心方式延伸 的晶体管。

公开(公告)号：US06831264B2

公开(公告)日：2004-12-14

申请号：US10142262

申请日：2002-05-08

Applicant: Yvon Cazaux

Inventor： Yvon Cazaux

IPC: H01L3100

CPC classification number: B82Y20/00 ,  H01L27/1443 ,  H01L27/14609 ,  H01L27/14632 ,  H01L31/035245 ,  H01L31/03762 ,  H04N5/361 ,  Y02E10/548

Abstract: A photodetector including an amorphous silicon photodiode having its anode connected to a reference voltage, an initialization MOS transistor connected between the cathode of the photodiode and a first supply voltage to set the cathode to the first supply voltage during an initialization phase, and means for measuring the voltage of the photodiode cathode, including saturation means for bringing the photodiode cathode to a saturation voltage close to the reference voltage immediately before the initialization phase.

Abstract translation: 一种光电检测器，包括其阳极连接到参考电压的非晶硅光电二极管，连接在光电二极管的阴极之间的初始化MOS晶体管和在初始化阶段期间将阴极设置为第一电源电压的第一电源电压，以及用于测量 包括光电二极管阴极的电压，包括用于在初始化阶段之前使光电二极管阴极达到接近参考电压的饱和电压的饱和装置。

公开(公告)号：US5073908A

公开(公告)日：1991-12-17

申请号：US492753

申请日：1990-03-13

Applicant: Yvon Cazaux

Inventor： Yvon Cazaux

IPC: G11C19/28

CPC classification number: G11C19/285

Abstract: Disclosed is a reading register of the type formed, firstly, by a shift register of the charge-coupled device type working according to a mode other than a two-phase mode and, secondly, an output circuit. It is notably an object of the invention improve the dynamic range, in amplitude, of the output signal delivered by the output circuit for supply voltages. The reading register has a substrate, bearing a shift register and an output circuit, separated from each other by an output gate. The shift register includes a sequence of transfer stages, each having at least three electrodes receiving transfer pulses of different phases, this sequence of stages being separated from the output gate by a last transfer stage or output transfer stage having at least three successive electrodes. According to one characteristic of the invention, the last two electrodes of the transfer stage are connected to each other and receive one and the same voltage pulse. The invention can be applied to reading registers for memory devices, photosensitive devices for cameras, etc.

Abstract translation: 公开了一种读取寄存器，其首先由根据除了两相模式之外的模式工作的电荷耦合器件类型的移位寄存器形成，其次，输出电路。 特别地，本发明的目的是改善由输出电路为电源电压输出的输出信号的幅度的动态范围。 读取寄存器具有衬底，具有移位寄存器和输出电路，通过输出门彼此分开。 移位寄存器包括传送级序列，每个传输级具有至少三个电极接收不同相位的传输脉冲，该级序列由具有至少三个连续电极的最后传输级或输出传输级与输出门分离。 根据本发明的一个特征，传输级的最后两个电极彼此连接并接收一个和相同的电压脉冲。 本发明可以应用于存储器件的读取寄存器，用于照相机的光敏器件等。

公开(公告)号：US5055931A

公开(公告)日：1991-10-08

申请号：US599971

申请日：1990-10-19

Applicant: Yvon Cazaux ,  Gilles Boucharlat

Inventor： Yvon Cazaux ,  Gilles Boucharlat

IPC: H01L27/148

CPC classification number: H01L27/14831

Abstract: Disclosed is a charge-transfer or charge-coupled (CCD) type device, aimed at increasing the charge storage capacity. The disclosed photosensitive device includes a plurality of photosensitive cells. Each photosensitive cell includes an elementary photosensitive zone beneath which there is formed a potential well. According to one characteristic, the potential well has a surface area greater than the surface area of the elementary photosensitive zone. The disclosure can be applied to charge-couped devices that include a non-photosensitive zone between the pixels.

Abstract translation: 公开了一种旨在增加电荷存储容量的电荷转移或电荷耦合（CCD）型装置。 所公开的感光装置包括多个感光单元。 每个感光单元包括基本光敏区，在该基底下形成势阱。 根据一个特征，势阱具有大于基本光敏区的表面积的表面积。 本公开可以应用于在像素之间包括非感光区域的充电耦合器件。

公开(公告)号：US09172851B2

公开(公告)日：2015-10-27

申请号：US13978792

申请日：2012-01-09

Applicant: Yvon Cazaux

Inventor： Yvon Cazaux

IPC: H04N3/14 ,  H01L27/146 ,  H04N5/372 ,  H04N5/374

CPC classification number: H04N3/1525 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14643 ,  H04N3/155 ,  H04N5/37206 ,  H04N5/3743

Abstract: Time delay and integration sensor comprising a matrix of photosensitive pixels organized in rows and columns. Each pixel of a column comprises a photosensitive element, a storage node, and a first transfer transistor connecting the photosensitive element to the storage node. Each pixel of a column, except for the last one, further comprises a second transfer transistor which connects the storage node of the pixel to the photosensitive element of the next pixel of the column. The two transfer transistors are connected to be active at the same time. With such a configuration, it is possible to define a sliding group of several consecutive pixels in a column, to expose the group of pixels, to aggregate the information of the pixels of the group, and to start again after shifting the group of pixels by one pixel.

Abstract translation: 时间延迟和积分传感器包括以行和列组织的感光像素矩阵。 列的每个像素包括感光元件，存储节点和将感光元件连接到存储节点的第一传输晶体管。 除了最后一个之外，列的每个像素还包括将像素的存储节点连接到列的下一个像素的感光元件的第二传输晶体管。 两个传输晶体管被连接成同时有效。 通过这样的配置，可以在列中定义几个连续像素的滑动组，以露出该组像素，聚集该组的像素的信息，并且在将该组像素移位之后再次开始 一个像素

公开(公告)号：US08735953B2

公开(公告)日：2014-05-27

申请号：US12551715

申请日：2009-09-01

Applicant: Pierre Gidon ,  Yvon Cazaux

Inventor： Pierre Gidon ,  Yvon Cazaux

IPC: H01L31/062

CPC classification number: H01L27/14625 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14685

Abstract: An image sensor comprising at least: CMOS-type photodiodes and transistors produced in a semiconductor layer having a thickness of between approximately 1 μm and 1.5 μm, a dielectric layer in which electrical interconnect layers are made, which are electrically connected to one another and/or to the CMOS photodiodes and/or transistors, said dielectric layer being arranged against a first face of the semiconductor layer opposite a second face of the semiconductor layer through which the light received by the sensor from the exterior is intended to enter, light-reflecting means arranged in the dielectric layer, opposite the photodiodes, and capable of reflecting at least a portion of the light received by the sensor towards the photodiodes.

Abstract translation: 一种图像传感器，至少包括：CMOS型光电二极管和在厚度为约1μm至1.5μm之间的半导体层中制造的晶体管，形成电互连层的电介质层，其彼此电连接和/ 或所述CMOS光电二极管和/或晶体管，所述电介质层被布置成抵靠所述半导体层的与所述半导体层的第二面相反的第一面，所述传感器从外部接收的光将通过所述第二面进入，反射 布置在电介质层中的与光电二极管相对的装置，并且能够将由传感器接收的光的至少一部分反射到光电二极管。