Abstract:
Methods and systems for generating a two-dimensional map of a characteristic at relative or absolute locations of measurement spots on a specimen during polishing are provided. One method includes scanning a specimen with a measurement device during polishing to generate output signals at measurement spots on the specimen. The method may also include determining a characteristic of polishing at the measurement spots from the output signals. In addition, the method may include determining relative or absolute locations of the measurement spots on the specimen. The method may further include generating a two-dimensional map of the characteristic at the relative or absolute locations of the measurement spots on the specimen. In some embodiments, the relative locations of the measurement spots may be determined from a representative scan path of the measurement device and an average spacing between starting points on individual scans.
Abstract:
Systems and methods for assessing a dimension of a feature on a specimen are provided. A system may include an illumination system configured to scan the specimen with light at multiple focal planes substantially simultaneously. The system may also include a collection system that may include multiple collectors. Approximately all light returned from one of the multiple focal planes may be collected by one of the multiple collectors. In addition, the system may include a processor configured to determine a relative intensity of the collected light. The processor may also be configured to assess a dimension of the feature on the specimen in a direction substantially perpendicular to an upper surface of the specimen using the relative intensity.
Abstract:
Systems and methods for inspection of a specimen are provided. One system includes an illumination subsystem configured to illuminate the specimen by scanning a spot across the specimen. The system also includes a non-imaging detection subsystem configured to generate output signals responsive to light specularly reflected from the spot scanned across the specimen. In addition, the system includes a processor configured to generate images of the specimen using the output signals and to detect defects on the specimen using the images. In one embodiment, the non-imaging detection subsystem includes an objective and a detector. An NA of the objective does not match a pixel size of the detector. In another embodiment, the non-imaging detection subsystem includes an objective having an NA of greater than about 0.05. The system may be configured for multi-spot illumination and multi-channel detection. Alternatively, the system may be configured for single spot illumination and multi-channel detection.
Abstract:
Systems and methods for inspecting a specimen are provided. One system includes an illumination subsystem configured to direct light to the specimen at an oblique angle of incidence. The light is polarized in a plane that is substantially parallel to the plane of incidence. The system also includes a detection subsystem configured to detect light scattered from the specimen. The detected light is polarized in a plane that is substantially parallel to the plane of scattering. In addition, the system includes a processor configured to detect defects on the specimen using signals generated by the detection subsystem. In one embodiment, such a system may be configured to detect defects having a size that is less than half of a wavelength of the light directed to the specimen.
Abstract:
Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including: but not limited to, critical dimension and overlay misregistration; defects and thin film characteristics; critical dimension and defects; critical dimension and thin film characteristics; critical dimension, thin film characteristics and defects; macro defects and micro defects; flatness, thin film characteristics and defects; overlay misregistration and flatness; an implant characteristic and defects; and adhesion and thickness. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.
Abstract:
Methods and systems for inspection of a specimen using different parameters are provided. One computer-implemented method includes determining optimal parameters for inspection based on selected defects. This method also includes setting parameters of an inspection system at the optimal parameters prior to inspection. Another method for inspecting a specimen includes illuminating the specimen with light having a wavelength below about 350 nm and with light having a wavelength above about 350 nm. The method also includes processing signals representative of light collected from the specimen to detect defects or process variations on the specimen. One system configured to inspect a specimen includes a first optical subsystem coupled to a broadband light source and a second optical subsystem coupled to a laser. The system also includes a third optical subsystem configured to couple light from the first and second optical subsystems to an objective, which focuses the light onto the specimen.
Abstract:
Computer-implemented methods, carrier media, and systems for creating a defect sample for use in selecting one or more parameters of an inspection recipe are provided. One method includes separating defects into bins based on regions in which the defects are located, defect types, and values of the defects for parameter(s) of a detection algorithm. The method also includes determining a number of the defects to be selected from each bin by distributing a user-specified target number of defects across the bins. In addition, the method includes selecting defects from the bins based on the determined numbers thereby creating a defect sample for use in selecting values of parameter(s) of the detection algorithm for use in the inspection recipe.
Abstract:
Various computer-implemented methods are provided. One method for sorting defects in a design pattern of a reticle includes searching for defects of interest in inspection data using priority information associated with individual defects in combination with one or more characteristics of a region proximate the individual defects. The priority information corresponds to modulation levels associated with the individual defects. The inspection data is generated by comparing images of the reticle generated for different values of a lithographic variable. The images include at least one reference image and at least one modulated image. A composite reference image can be generated from two or more reference images. The method also includes assigning one or more identifiers to the defects of interest. The identifier(s) may include, for example, a defect classification and/or an indicator identifying if the defects of interest are to be used for further processing.
Abstract:
Disclosed are apparatus and methods for optimizing a metrology tool, such as an optical or scanning electron microscope so that minimum human intervention is achievable during the optimization. In general, a set of specifications and an initial input data are initially provided for a particular target. The specifications provide limits for characteristics of images that are to be measured by the metrology tool. The metrology tool is then automatically optimized for measuring the particular target so as to meet one or more of the provided specifications without further significant human intervention with respect to the metrology tool. In one aspect, the input data provided prior to the automated optimization procedure includes a plurality of target locations and a synthetic image of the particular target.
Abstract:
Various methods and systems for determining a position of inspection data in design data space are provided. One computer-implemented method includes determining a centroid of an alignment target formed on a wafer using an image of the alignment target acquired by imaging the wafer. The method also includes aligning the centroid to a centroid of a geometrical shape describing the alignment target. In addition, the method includes assigning a design data space position of the centroid of the alignment target as a position of the centroid of the geometrical shape in the design data space. The method further includes determining a position of inspection data acquired for the wafer in the design data space based on the design data space position of the centroid of the alignment target.