公开(公告)号：US11874237B2

公开(公告)日：2024-01-16

申请号：US17114842

申请日：2020-12-08

Applicant: NOVA MEASURING INSTRUMENTS INC.

Inventor： Heath Pois ,  David Reed ,  Bruno Shueler ,  Rodney Smedt ,  Jeffrey Fanton

IPC: G01N23/201 ,  G01N23/207 ,  H01L21/66

CPC classification number: G01N23/201 ,  G01N23/207 ,  G01N2223/054 ,  H01L22/12

Abstract: A system and method for measuring a sample by X-ray reflectance scatterometry. The method may include impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles; and collecting at least a portion of the scattered X-ray beam.

公开(公告)号：US20230091625A1

公开(公告)日：2023-03-23

申请号：US17821785

申请日：2022-08-23

Applicant: NOVA MEASURING INSTRUMENTS INC.

Inventor： David A. REED ,  Bruno W. SCHUELER ,  Bruce H. NEWCOME ,  Rodney SMEDT ,  Chris BEVIS

IPC: H01J49/14 ,  H01L21/66 ,  H01J49/12 ,  G01N23/2258 ,  G01N23/22 ,  G01Q10/04 ,  H01J49/26

Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).

公开(公告)号：US11183377B2

公开(公告)日：2021-11-23

申请号：US16612697

申请日：2017-05-12

Applicant: NOVA MEASURING INSTRUMENTS, INC.

Inventor： Christopher F. Bevis ,  Yungman Alan Liu ,  David Allen Reed ,  Eli Cheifetz ,  Amit Weingarten ,  Alexander Kadyshevitch

IPC: H01J49/02 ,  H01J49/06 ,  G01T1/20 ,  G01T1/208 ,  G01T1/29 ,  G01T1/28

Abstract: An ion detector for secondary ion mass spectrometer, the detector having an electron emission plate coupled to a first electrical potential and configured to emit electrons upon incidence on ions; a scintillator coupled to a second electrical potential, different from the first electrical potential, the scintillator having a front side facing the electron emission plate and a backside, the scintillator configured to emit photons from the backside upon incidence of electrons on the front side; a lightguide coupled to the backside of the scintillator and confining flow of photons emitted from the backside of the scintillator; and a solid-state photomultiplier coupled to the light guide and having an output configured to output electrical signal corresponding to incidence of photons from the lightguide. A SIMS system includes a plurality of such detectors movable arranged over the focal plane of a mass analyzer.

公开(公告)号：US20210305037A1

公开(公告)日：2021-09-30

申请号：US17164499

申请日：2021-02-01

Applicant: NOVA MEASURING INSTRUMENTS INC.

Inventor： David A. REED ,  Bruno W. SCHUELER ,  Bruce H. NEWCOME ,  Rodney SMEDT ,  Chris BEVIS

IPC: H01J49/14 ,  H01L21/66 ,  H01J49/12 ,  G01N23/22 ,  G01Q10/04 ,  H01J49/26

Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).

公开(公告)号：US09952166B2

公开(公告)日：2018-04-24

申请号：US15454950

申请日：2017-03-09

Applicant: Heath A. Pois ,  Wei Ti Lee

Inventor： Heath A. Pois ,  Wei Ti Lee

IPC: G01N23/22 ,  G01B15/02 ,  G01N23/223 ,  G01N23/227

CPC classification number: G01N23/2206 ,  G01B15/02 ,  G01N23/2208 ,  G01N23/223 ,  G01N23/2273 ,  G01N2223/61 ,  G01N2223/6116

Abstract: Systems and approaches for silicon germanium thickness and composition determination using combined XPS and XRF technologies are described. In an example, a method for characterizing a silicon germanium film includes generating an X-ray beam. A sample is positioned in a pathway of said X-ray beam. An X-ray photoelectron spectroscopy (XPS) signal generated by bombarding said sample with said X-ray beam is collected. An X-ray fluorescence (XRF) signal generated by bombarding said sample with said X-ray beam is also collected. Thickness or composition, or both, of the silicon germanium film is determined from the XRF signal or the XPS signal, or both.

公开(公告)号：US20250006451A1

公开(公告)日：2025-01-02

申请号：US18675096

申请日：2024-05-27

Applicant: NOVA MEASURING INSTRUMENTS INC.

Inventor： David A. REED ,  Bruce H. NEWCOME ,  Bruno W. SCHUELER

IPC: H01J35/08 ,  G01N23/20008 ,  G01N23/207 ,  G01N23/2208 ,  G01N23/223 ,  H01J35/24

Abstract: The present invention is intended to provide improved patterned X-ray emitting targets as well as X-ray sources that include patterned X-ray emitting targets as well as X-ray reflectance scatterometry (XRS) systems and also including X-ray photoelectron spectroscopy (XPS) systems and X-ray fluorescence (XRF) systems which employ such X-ray emitting targets.

公开(公告)号：US12158437B2

公开(公告)日：2024-12-03

申请号：US18337397

申请日：2023-06-19

Applicant: NOVA MEASURING INSTRUMENTS INC.

Inventor： Charles Larson ,  Kavita Shah ,  Wei T Lee

IPC: G01N23/2273 ,  C23C16/06 ,  C23C16/24 ,  C23C16/455 ,  C23C16/52 ,  H01L21/67

Abstract: XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.

公开(公告)号：US20240345006A1

公开(公告)日：2024-10-17

申请号：US18412817

申请日：2024-01-15

Applicant: NOVA MEASURING INSTRUMENTS INC.

Inventor： Heath POIS ,  David A. REED ,  Bruno W. SCHUELER ,  Rodney SMEDT ,  Jeffrey FANTON

IPC: G01N23/201 ,  G01N23/207 ,  H01L21/66

CPC classification number: G01N23/201 ,  G01N23/207 ,  G01N2223/054 ,  H01L22/12

Abstract: A system and method for measuring a sample by X-ray reflectance scatterometry. The method may include impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles; and collecting at least a portion of the scattered X-ray beam.

公开(公告)号：US20240044825A1

公开(公告)日：2024-02-08

申请号：US18337397

申请日：2023-06-19

Applicant: NOVA MEASURING INSTRUMENTS INC.

Inventor： Charles LARSON ,  Kavita SHAH ,  Wei T. LEE

IPC: G01N23/2273 ,  H01L21/67 ,  C23C16/52 ,  C23C16/24 ,  C23C16/455 ,  C23C16/06

CPC classification number: G01N23/2273 ,  H01L21/67253 ,  C23C16/52 ,  C23C16/24 ,  C23C16/45529 ,  C23C16/06

Abstract: XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.

公开(公告)号：US11852467B2

公开(公告)日：2023-12-26

申请号：US17438845

申请日：2020-03-12

Applicant: NOVA MEASURING INSTRUMENTS, INC.

Inventor： Heath A. Pois ,  Laxmi Warad ,  Srinivasan Rangarajan

IPC: G01B15/02 ,  G01N23/2273

CPC classification number: G01B15/02 ,  G01N23/2273 ,  G01N2223/61

Abstract: Quantification of the passivation and the selectivity in deposition process is disclosed. The passivation is evaluated by calculating film thicknesses on pattern lines and spaces. An XPS signal is used, which is normalized with X-ray flux number. The method is efficient for calculating thickness in selective deposition process, wherein the thickness can be used as metric to measure selectivity. Measured photoelectrons for each of the materials can be expressed as a function of the thickness of the material overlaying it, adjusted by material constant and effective attenuation length. In selective deposition over a patterned wafer, the three expressions can be solved to determine the thickness of the intended deposition and the thickness of any unintended deposition over passivated pattern.