公开(公告)号：US20050073235A1

公开(公告)日：2005-04-07

申请号：US10951509

申请日：2004-09-28

Applicant: Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Iwao Ohwada

Inventor： Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Iwao Ohwada

IPC: H01J29/04 ,  G09G3/22 ,  H01J1/05 ,  H01J1/14 ,  H01J1/30 ,  H01J1/312 ,  H01J19/06 ,  H01J31/12 ,  H01J63/02 ,  H01J63/06

CPC classification number: H01J1/312 ,  B82Y10/00 ,  G09G3/22 ,  G09G2310/06 ,  H01J31/127 ,  H01J63/02 ,  H01J2201/3125

Abstract: An electron emitter includes a lower electrode formed on a glass substrate, an emitter section made of dielectric film formed on the lower electrode, and an upper electrode formed on the emitter section. A drive voltage for electron emission is applied between the upper electrode and the lower electrode. At least the upper electrode has a plurality of through regions through which the emitter section is exposed. The upper electrode has a surface which faces the emitter section in peripheral portions of the through regions and which is spaced from the emitter section.

Abstract translation: 电子发射器包括形成在玻璃基板上的下电极，形成在下电极上的电介质膜制成的发射极部分和形成在发射极部分上的上电极。 用于电子发射的驱动电压施加在上电极和下电极之间。 至少上部电极具有多个通过发射极部分暴露的通过区域。 上电极具有与通孔区域的周边部分相对的发射极部分的表面，并且与发射极部分间隔开。

公开(公告)号：US06835947B2

公开(公告)日：2004-12-28

申请号：US10066158

申请日：2002-01-31

Applicant: Alexander Govyadinov ,  Michael J. Regan

Inventor： Alexander Govyadinov ,  Michael J. Regan

IPC: H01L2906

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J29/467 ,  H01J2201/304 ,  H01J2201/3125

Abstract: An emitter includes an electron source and a cathode. The cathode has an emissive surface. The emitter further includes a continuous anisotropic conductivity layer disposed between the electron source and the emissive surface of the cathode. The anisotropic conductivity layer has an anisotropic sheet resistivity profile and provides for substantially uniform emissions over the emissive surface of the emitter.

Abstract translation: 发射体包括电子源和阴极。 阴极具有发射表面。 发射极还包括设置在电子源和阴极的发射表面之间的连续各向异性导电层。 各向异性导电层具有各向异性的电阻率分布，并且在发射体的发射表面上提供基本均匀的发射。

公开(公告)号：US20040256995A1

公开(公告)日：2004-12-23

申请号：US10731901

申请日：2003-12-09

Applicant: NGK Insulators, Ltd.

Inventor： Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Iwao Ohwada ,  Takayoshi Akao

IPC: G09G003/10

CPC classification number: H01J1/312 ,  B82Y10/00 ,  G09G3/2022 ,  G09G3/22 ,  H01J31/127 ,  H01J2201/3125

Abstract: One image is displayed in a period as one frame, which includes one charge accumulation period and one light emission period. In the charge accumulation period, all electron emitters are scanned, and voltages depending on the luminance levels of corresponding pixels are applied to the electron emitters which correspond to pixels to be turned on (to emit light), to accumulate charges (electrons) in amounts depending on the luminance levels of corresponding pixels in the electron emitters which correspond to pixels to be turned on. In the next light emission period, a constant voltage is applied to all the electron emitters to emit electrons in amounts depending on the luminance levels of corresponding pixels from the electron emitters which correspond to pixels to be turned on, thereby emitting light from the pixels to be turned on.

Abstract translation: 一个图像在一个周期中显示为一帧，其包括一个电荷累积周期和一个发光周期。 在电荷累积期间，对所有的电子发射体进行扫描，对应于要导通（发光）的像素的电子发射体，施加与相应像素的亮度等级相对应的电压，以积累电荷（电子） 取决于电子发射器中对应于要打开的像素的对应像素的亮度水平。 在下一个发光周期中，恒定电压被施加到所有的电子发射器上，以发射电子量，这取决于对应于要打开的像素的电子发射器的对应像素的亮度水平，从而将来自像素的光发射到 打开

公开(公告)号：US20040256579A1

公开(公告)日：2004-12-23

申请号：US10601090

申请日：2003-06-20

Applicant: Nanion ApS

Inventor： Petr Viscor ,  Michael Jensen ,  Rolf Stribolt Andersen ,  Vladimir Kolarik ,  Armin Delong

IPC: H01J037/06 ,  H01J037/317

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J2201/3125

Abstract: Metal-insulator-metal planar electron emitters (PEEs) have potential for use in advanced lithography for future generations of semiconductor devices. The PEE has, however, a limited lifetime, which restricts its commercial applicability. It is believed that the limited lifetime of the PEE is limited by in-diffusion of metal ions from the anode. The in-diffusion may be countered in a number of different ways. One way is to cool the PEE to temperatures below room temperature. This lowers the metal ion mobility, and so the metal ions are less likely to diffuse into the insulator layer. Another way is to occasionally reverse the electrical potential across the PEE from the polarity used to generate the electron beam. This counteracts the electrical driving force that drives the positively charged metal ions from the PEE anode to the PEE cathode.

Abstract translation: 金属 - 绝缘体 - 金属平面电子发射体（PEE）可用于未来几代半导体器件的先进光刻技术。 然而，PEE的寿命有限，限制了其商业应用。 据信，PEE的有限寿命受到来自阳极的金属离子的扩散的限制。 内扩散可以以多种不同的方式进行反驳。 一种方法是将PEE冷却到低于室温的温度。 这降低了金属离子迁移率，因此金属离子不太可能扩散到绝缘体层中。 另一种方法是偶尔从用于产生电子束的极性反转PEE两端的电位。 这抵消了驱动从PEE阳极到PEE阴极的带正电荷的金属离子的电驱动力。

公开(公告)号：US20040233136A1

公开(公告)日：2004-11-25

申请号：US10808258

申请日：2004-03-24

Applicant: NGK Insulators, Ltd.

Inventor： Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Iwao Ohwada ,  Takayoshi Akao

IPC: G09G003/20 ,  G09G003/22

CPC classification number: B82Y10/00 ,  G09G3/2022 ,  G09G3/22 ,  H01J1/312 ,  H01J31/127 ,  H01J2201/3125

Abstract: One image is displayed in a period as one frame, which includes one charge accumulation period and one light emission period. In the charge accumulation period, all electron emitters are scanned, and voltages depending on the luminance levels of corresponding pixels are applied to the electron emitters which correspond to pixels to be turned on (to emit light), to accumulate charges (electrons) in amounts depending on the luminance levels of corresponding pixels in the electron emitters which correspond to pixels to be turned on. In the next light emission period, a constant voltage is applied to all the electron emitters to emit electrons in amounts depending on the luminance levels of corresponding pixels from the electron emitters which correspond to pixels to be turned on, thereby emitting light from the pixels to be turned on.

Abstract translation: 一个图像在一个周期中显示为一帧，其包括一个电荷累积周期和一个发光周期。 在电荷累积期间，对所有的电子发射体进行扫描，对应于要导通（发光）的像素的电子发射体，施加与相应像素的亮度等级相对应的电压，以积累电荷（电子） 取决于电子发射器中对应于要打开的像素的对应像素的亮度水平。 在下一个发光周期中，恒定电压被施加到所有的电子发射器上，以发射电子量，这取决于对应于要打开的像素的电子发射器的对应像素的亮度水平，从而将来自像素的光发射到 打开

公开(公告)号：US06781146B2

公开(公告)日：2004-08-24

申请号：US09846127

申请日：2001-04-30

Applicant: Zhizhang Chen ,  Michael J. Regan ,  Brian E Bolf ,  Thomas Novet ,  Paul J. Benning ,  Mark Alan Johnstone ,  Sriram Ramamoorthi

Inventor： Zhizhang Chen ,  Michael J. Regan ,  Brian E Bolf ,  Thomas Novet ,  Paul J. Benning ,  Mark Alan Johnstone ,  Sriram Ramamoorthi

IPC: H01L2906

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J9/022

Abstract: An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within which the tunneling layer is formed. A cathode layer is formed on the tunneling layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.

Abstract translation: 发射体具有形成在电子供给层上的电子供给层和隧道层。 可选地，在电子供应层上形成绝缘体层，并且具有限定在其中形成隧道层的开口。 在隧道层上形成阴极层，以提供电子和/或光子能量发射的表面。 优选地，对发射极进行退火处理，从而增加从电子供给层隧穿到阴极层的电子的供应。

公开(公告)号：US20040135438A1

公开(公告)日：2004-07-15

申请号：US10719521

申请日：2003-11-21

Applicant: NGK Insulators, Ltd.

Inventor： Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Iwao Ohwada

IPC: H03K003/00

CPC classification number: B82Y10/00 ,  H01J1/30 ,  H01J1/312 ,  H01J1/32

Abstract: An electronic pulse generation device has an emitter section having a plate shape, a cathode electrode formed on a front surface of the emitter section, an anode electrode formed on a back surface of the emitter section, and a pulse generation source which applies a drive voltage between the cathode electrode and the anode electrode through a resistor. The anode electrode is connected to GND through another resistor. A collector electrode is provided above the cathode electrode, and the collector electrode is coated with a phosphor layer. A bias voltage is applied to the collector electrode through another resistor.

Abstract translation: 电子脉冲发生装置具有板状的发射极部分，形成在发射极部分的前表面上的阴极电极，形成在发射极部分的背面上的阳极电极和施加驱动电压的脉冲发生源 通过电阻器在阴极电极和阳极电极之间。 阳极通过另一个电阻连接到GND。 集电极设置在阴极电极的上方，集电极涂覆荧光体层。 偏置电压通过另一个电阻施加到集电极。

公开(公告)号：US06758711B2

公开(公告)日：2004-07-06

申请号：US09881981

申请日：2001-06-14

Applicant: Zhizhang Chen ,  Ronald L. Enck ,  Sriram Ramamoorthi ,  Qin Liu

Inventor： Zhizhang Chen ,  Ronald L. Enck ,  Sriram Ramamoorthi ,  Qin Liu

IPC: H01J900

CPC classification number: H01J3/02 ,  B82Y10/00 ,  H01J1/30 ,  H01J1/312 ,  H01J3/021 ,  H01J9/022 ,  H01J2237/1205

Abstract: A method for creating an electron lens includes the steps of applying a polymer layer on an emitter surface of an electron emitter and then curing the polymer layer to reduce volatile content.

公开(公告)号：US20040124761A1

公开(公告)日：2004-07-01

申请号：US10724149

申请日：2003-12-01

Applicant: Hitachi, Ltd.

Inventor： Toshiaki Kusunoki ,  Masakazu Sagawa ,  Mutsumi Suzuki

IPC: H01J001/62

CPC classification number: H01J31/127 ,  B82Y10/00 ,  H01J1/312 ,  Y10S345/905

Abstract: The invention provides a display device using thin film type electron sources having a structure that can be formed in a simple manufacturing process. A lower electrode, a protective insulating layer and an interlayer film are formed on a cathode substrate. An upper bus electrode made from a laminated film of a metal film lower layer and a metal film upper layer is provided further on the interlayer film. A film of an upper electrode of a thin film type electron source for each pixel constituted by an insulating layer serving as an electron accelerating layer on the lower electrode and the upper electrode is formed on two stripe electrodes of the upper bus electrode in that pixel and another upper bus electrode in an adjacent pixel by sputtering. Then, the upper electrode is separated by self-alignment due to a setback portion of the metal film lower layer and an appentice of the metal film upper layer of the corresponding upper bus electrode. Thus, a thin film type electron source separated in accordance with each pixel is formed.

Abstract translation: 本发明提供一种使用薄膜型电子源的显示装置，其具有能够以简单的制造工艺形成的结构。 在阴极基板上形成下电极，保护绝缘层和中间膜。 在层间膜上还设置由金属膜下层和金属膜上层的叠层膜制成的上部总线电极。 在该像素中的上部总线电极的两个条状电极上形成由用于在下部电极和上部电极上的电子加速层的绝缘层构成的每个像素的薄膜型电子源的上部电极的膜， 通过溅射在相邻像素中的另一个上总线电极。 然后，由于金属膜下层的后退部分和相应的上部总线电极的金属膜上层的附着，上部电极由于自对准而分离。 因此，形成根据每个像素分离的薄膜型电子源。

公开(公告)号：US06737793B2

公开(公告)日：2004-05-18

申请号：US10378650

申请日：2003-03-05

Applicant: Pehr Pehrsson ,  James Butler

Inventor： Pehr Pehrsson ,  James Butler

IPC: H01J102

CPC classification number: B82Y10/00 ,  H01J1/3044 ,  H01J1/312 ,  H01J9/022 ,  H01J9/025 ,  H01J2201/30446 ,  H01J2201/30457

Abstract: An apparatus for emitting electrons is provided. The apparatus includes a subsurface emitter having a sharp tip, a substrate including a base, and electrical continuity between the tip, the base, and an external circuit. This emitter structure may be used to form individual emitters or arrays of emitters. Also provided is a method of making electron emitters which is comprised of implanting energetic ions into a diamond lattice to form cones or other continuous regions of damaged diamond. These regions are more electrically conducting than the surrounding diamond lattice, and have locally sharp tips at or near the point of entry of the ion into the diamond. The tips may then also be additionally coated with a layer of a wide band-gap semiconductor. An electrically conducting material may also be placed in proximity to the tips to generate an electric field sufficient to extract electrons from the conducting tips into either the region above the surface, or into the wide band-gap semiconductor layer in contact with the tips. Electrical contact is made to the electrically conducting damage tracks and the electrical circuit may be completed with an electrically conducting material on the surface of the wide band-gap semiconductor or diamond, or in the ambient above the surface of the emitter. The surface of the wideband gap semiconductor or diamond may be chemically modified to enhance the emission of electrons from the surface.

Abstract translation: 提供一种用于发射电子的装置。 该装置包括具有尖锐尖端的地下发射器，包括基座的基板以及尖端，基座和外部电路之间的电连续性。 该发射器结构可以用于形成发射器的单独发射器或阵列。 还提供了一种制造电子发射体的方法，其包括将能量离子注入到金刚石晶格中以形成损坏的金刚石的锥体或其它连续区域。 这些区域比周围的金刚石晶格更具导电性，并且在离子进入金刚石的位置处或附近具有局部尖锐的尖端。 然后可以另外涂覆一层宽带隙半导体的尖端。 还可以将导电材料放置在靠近尖端处以产生足以将电子从导电尖端引入到表面上方的区域中的电场，或者与尖端接触的宽带隙半导体层中。 对导电损伤轨道进行电接触，并且电路可以在宽带隙半导体或金刚石的表面上或在发射器表面上的环境中的导电材料完成。 宽带隙半导体或金刚石的表面可以被化学修饰以增强从表面发射电子。