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    Integrated field emission array for ion desorption
    31.
    发明授权
    Integrated field emission array for ion desorption 有权

    公开(公告)号：US09425019B1

    公开(公告)日：2016-08-23

    申请号：US14640655

    申请日：2015-03-06

    Applicant: Sandia Corporation ,  Christopher Holland ,  David Chichester

    Inventor： Paul J. Resnick ,  Kristin L. Hertz ,  Christopher Holland ,  David Chichester

    IPC: H01L29/06 ,  H01J9/02 ,  H01L21/311

    CPC classification number: H01J9/02 ,  H01J3/04 ,  H01L21/31111

    Abstract: An integrated field emission array for ion desorption includes an electrically conductive substrate; a dielectric layer lying over the electrically conductive substrate comprising a plurality of laterally separated cavities extending through the dielectric layer; a like plurality of conically-shaped emitter tips on posts, each emitter tip/post disposed concentrically within a laterally separated cavity and electrically contacting the substrate; and a gate electrode structure lying over the dielectric layer, including a like plurality of circular gate apertures, each gate aperture disposed concentrically above an emitter tip/post to provide a like plurality of annular gate electrodes and wherein the lower edge of each annular gate electrode proximate the like emitter tip/post is rounded. Also disclosed herein are methods for fabricating an integrated field emission array.

    Ion source with cathode having an array of nano-sized projections
    35.
    发明授权
    Ion source with cathode having an array of nano-sized projections 有权
    具有阴极的离子源具有纳米尺寸的突起阵列

    公开(公告)号：US08866068B2

    公开(公告)日：2014-10-21

    申请号：US13728950

    申请日：2012-12-27

    Applicant: Schlumberger Technology Corporation

    Inventor： Jani Reijonen ,  Luke Perkins ,  Harold Pfutzner

    IPC: G01V5/00 ,  H01J27/20 ,  G01V5/08

    CPC classification number: H01J27/205 ,  G01V5/085 ,  H01J1/3044 ,  H01J3/04 ,  H01J2201/30411

    Abstract: An ion source for use in a particle accelerator includes at least one cathode. The at least one cathode has an array of nano-sized projections and an array of gates adjacent the array of nano-sized projections. The array of nano-sized projections and the array of gates have a first voltage difference such that an electric field in the cathode causes electrons to be emitted from the array of nano-sized projections and accelerated downstream. There is a ion source electrode downstream of the at least one cathode, and the at least one cathode and the ion source electrode have the same voltage applied such that the electrons enter the space encompassed by the ion source electrode, some of the electrons as they travel within the ion source electrode striking an ionizable gas to create ions.

    Abstract translation: 用于粒子加速器的离子源包括至少一个阴极。 所述至少一个阴极具有纳米尺寸突起的阵列和邻近纳米尺寸突起阵列的门阵列。 纳米尺寸突起阵列和栅极阵列具有第一电压差，使得阴极中的电场使电子从纳米尺寸突起阵列发射并加速下游。 在至少一个阴极的下游存在离子源电极，并且至少一个阴极和离子源电极施加相同的电压，使得电子进入由离子源电极包围的空间中，一些电子就像它们 在离子源电极内行进进入可电离气体以产生离子。

    TARGET FOR GENERATING POSITIVE IONS, METHOD OF FABRICATING THE SAME, AND TREATMENT APPARATUS USING THE TARGET
    37.
    发明申请
    TARGET FOR GENERATING POSITIVE IONS, METHOD OF FABRICATING THE SAME, AND TREATMENT APPARATUS USING THE TARGET 有权
    用于产生积极离子的目标，制备它的方法和使用目标的治疗装置

    公开(公告)号：US20140135562A1

    公开(公告)日：2014-05-15

    申请号：US13919960

    申请日：2013-06-17

    Applicant: Electronics and Telecommunications Research Institute

    Inventor： Moon Youn JUNG ,  Hyeon-Bong PYO ,  Dong-Ho SHIN ,  Seunghwan KIM

    IPC: H01J27/02 ,  A61N5/10

    CPC classification number: H01J3/04 ,  A61N5/10 ,  A61N2005/1088 ,  H01J27/02 ,  H01J27/022 ,  H01J27/24

    Abstract: Provided is an ion beam treatment apparatus. The treatment apparatus includes a target for generating positive ions including a thin film for generating positive ions and nanowires disposed on at least one side of the thin film for generating positive ions, and a laser for emitting a laser beam incident on nanowires to project positive ions to a tumor region of a patient by generating the positive ions from the thin film for generating positive ions. Each of the nanowires may include a metal nanocore and a polymer shell surrounding the metal nanocore. The laser beam incident on the nanowires forms surface plasmon resonance, a near field having an intensity enhanced more than an intensity of the laser beam is formed by the surface plasmon resonance, and the positive ions are emitted from the thin film for generating positive ions by the near field.

    Abstract translation: 提供了一种离子束处理装置。 该处理装置包括用于产生正离子的目标物，其包括用于产生正离子的薄膜和设置在该薄膜的至少一侧上的用于产生正离子的纳米线，以及用于发射入射到纳米线上以投射正离子的激光束的激光 通过从薄膜产生正离子以产生正离子到患者的肿瘤区域。 每个纳米线可以包括金属纳米孔和围绕金属纳米孔的聚合物壳。 入射到纳米线上的激光束形成表面等离子体共振，通过表面等离子体共振形成具有比激光束强度增强的强度的近场，并且从薄膜发射正离子以产生正离子 近场。

    Proton beam positioning verification method and apparatus used in conjunction with a charged particle cancer therapy system
    38.
    发明授权
    Proton beam positioning verification method and apparatus used in conjunction with a charged particle cancer therapy system 有权
    与带电粒子癌症治疗系统结合使用的质子束定位验证方法和装置

    公开(公告)号：US08178859B2

    公开(公告)日：2012-05-15

    申请号：US12618718

    申请日：2009-11-14

    Applicant: Vladimir Balakin

    Inventor： Vladimir Balakin

    IPC: A61N5/00

    CPC classification number: H05H7/10 ,  A61N5/1048 ,  A61N5/1067 ,  A61N2005/1087 ,  H01J3/04 ,  H01J3/14 ,  H05H13/04

    Abstract: The invention comprises a proton beam positioning method and apparatus used in conjunction with multi-axis charged particle radiation therapy of cancerous tumors. The proton beam verification system allows for monitoring of the actual proton beam position in real-time without destruction of the proton beam. The system includes a coating or thin layer substantially in contact with a foil covering the end of an exit nozzle or is a layer located after the x- and y-axis proton beam scanning controllers and before the patient. The coating yields a measurable spectroscopic response, spatially viewable by the detector, as a result of transmission by the proton beam. The proton beam position is monitored by the detector and compared to the calibration and/or treatment plan to verify accurate proton delivery to the tumor and/or as a proton beam shutoff safety indicator.

    Abstract translation: 本发明包括与癌肿瘤的多轴带电粒子放射治疗结合使用的质子束定位方法和装置。 质子束验证系统允许实时监测实际的质子束位置，而不破坏质子束。 该系统包括基本上与覆盖出口喷嘴的端部的箔接触的涂层或薄层，或者是位于x轴和y轴质子束扫描控制器之后且位于患者之前的层。 作为质子束传输的结果，涂层产生可测量的光谱响应，由检测器空间可见。 质子束位置由检测器监测，并与校准和/或治疗计划进行比较，以验证对肿瘤的精确质子传递和/或作为质子束截止安全指示剂。

    ION GATE FOR DUAL ION MOBILITY SPECTROMETER AND METHOD THEREOF
    39.
    发明申请
    ION GATE FOR DUAL ION MOBILITY SPECTROMETER AND METHOD THEREOF 有权
    用于双离子移动光谱仪的离子通道及其方法

    公开(公告)号：US20100102219A1

    公开(公告)日：2010-04-29

    申请号：US12579719

    申请日：2009-10-15

    Applicant: Hua Peng ,  Qingjun Zhang ,  Jin Lin ,  Yuanjing Li ,  Zhiqiang Chen ,  Shaoji Mao ,  Zhude Dai ,  Shiping Cao ,  Zhongxia Zhang ,  Yangtian Zhang ,  Dexu Lin ,  Qinghua Wang ,  Zhang Qing Jun

    Inventor： Hua Peng ,  Qingjun Zhang ,  Jin Lin ,  Yuanjing Li ,  Zhiqiang Chen ,  Shaoji Mao ,  Zhude Dai ,  Shiping Cao ,  Zhongxia Zhang ,  Yangtian Zhang ,  Dexu Lin ,  Qinghua Wang ,  Zhang Qing Jun

    IPC: H01J49/02 ,  B01D59/44

    CPC classification number: H01J3/04 ,  H01J49/004 ,  H01J49/061

    Abstract: Disclosed is an ion gate for a dual IMS and method. The ion gate includes an ion source, a first gate electrode placed on one side of the ion source, a second gate electrode placed on the other side of the ion source, a third gate electrode placed on the side of the first gate electrode away from the ion source, a fourth gate electrode placed on the side of the second gate electrode away from the ion source, wherein during the ion storage, the potential at the position on the tube axis of the ion gate corresponding to the first gate electrode is different from the potentials at the positions on the tube axis corresponding to the ion source and the third gate electrode, and the potential at the position on the tube axis corresponding to the second gate electrode is different from the potentials at the positions on the tube axis corresponding to the ion source and the fourth gate electrode. According to the present invention, after sample gas enters the ion gates, charge exchange with reaction ions occurs between the first gate electrode and the second electrode, and positive and negative ions are continuously stored into the storage regions for the positive and negative ions. This leads to an improvement of utility rate of ions. Then, the ions are educed in a step-wise manner from the storage regions for the positive and negative ions by a simple control of a combination of the electrodes.

    Abstract translation: 公开了一种用于双重IMS和方法的离子门。 离子浇口包括离子源，位于离子源一侧的第一栅电极，位于离子源另一侧的第二栅电极，位于第一栅电极侧的第三栅电极， 离子源，第四栅极放置在远离离子源的第二栅电极侧，其中在离子存储期间，对应于第一栅电极的离子门的管轴上的位置的电位不同 从对应于离子源和第三栅电极的管轴上的位置的电位和对应于第二栅电极的管轴上的位置的电位与管轴对应的位置的电位不同 到离子源和第四栅电极。 根据本发明，在样品气体进入离子浇口之后，在第一栅电极和第二电极之间产生与反应离子的电荷交换，正离子和负离子被连续地存储在正离子和负离子的存储区中。 这导致了离子的利用率的提高。 然后，通过简单地控制电极的组合，从正离子和负离子的存储区域逐步地排出离子。

    Ion source with substantially planar design
    40.
    发明申请
    Ion source with substantially planar design 失效
    具有基本平面设计的离子源

    公开(公告)号：US20060103319A1

    公开(公告)日：2006-05-18

    申请号：US10986456

    申请日：2004-11-12

    Applicant: Henry Luten ,  Vijayen Veerasamy

    Inventor： Henry Luten ,  Vijayen Veerasamy

    IPC: H01J7/24

    CPC classification number: H01J37/08 ,  H01J3/04 ,  H01J27/143

    Abstract: In certain example embodiments of this invention, there is provide an ion source including an anode and a cathode. In certain example embodiments, the cathode does not overhang over the anode, or vice versa. Since no, or fewer, areas of overhang are provided between the anode and cathode, there is less undesirable build-up on the anode and/or cathode during operation of the ion source so that the source can run more efficiently. Moreover, in certain example embodiments, an insulator such as a ceramic or the like is provided between the anode and cathode.

    Abstract translation: 在本发明的某些示例实施例中，提供了包括阳极和阴极的离子源。 在某些示例性实施例中，阴极不会悬在阳极上，反之亦然。 由于在阳极和阴极之间没有或更少的突出区域被提供，所以在离子源操作期间在阳极和/或阴极上的不希望的积聚较少，使得源可以更有效地运行。 此外，在某些示例性实施例中，在阳极和阴极之间设置诸如陶瓷等的绝缘体。

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