公开(公告)号：US12033958B2

公开(公告)日：2024-07-09

申请号：US17536800

申请日：2021-11-29

申请人： WESTERN DIGITAL TECHNOLOGIES, INC.

发明人： Yangming Liu ,  Shenghua Huang ,  Bo Yang ,  Ning Ye ,  Cong Zhang

IPC分类号： H01L23/00 ,  H01L23/552 ,  H01L25/065

CPC分类号： H01L23/562 ,  H01L23/552 ,  H01L24/48 ,  H01L25/0652 ,  H01L25/0657 ,  H01L2224/48145 ,  H01L2224/48225 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2924/3511

摘要： A semiconductor device includes a substrate, semiconductor dies on the substrate, molding compound and a reinforcing layer suspended within the molding compound. The reinforcing layer may for example be a copper foil formed in the molding compound over the semiconductor dies during the compression molding process. The reinforcing layer may have a structural rigidity which provides additional strength to the semiconductor device. The reinforcing layer may also be formed of a thermal conductor to draw heat away from a controller die within the semiconductor device.

公开(公告)号：US12033946B2

公开(公告)日：2024-07-09

申请号：US17752293

申请日：2022-05-24

申请人： Amkor Technology Singapore Holding Pte. Ltd.

发明人： Ji Young Chung ,  Seung Chul Jang ,  Ron Huemoeller

IPC分类号： H01L23/538 ,  H01L23/552 ,  H01L25/00 ,  H01L25/065 ,  H01L25/10

CPC分类号： H01L23/5381 ,  H01L23/5383 ,  H01L23/5386 ,  H01L23/5387 ,  H01L23/552 ,  H01L25/0652 ,  H01L25/105 ,  H01L25/50 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06537 ,  H01L2225/06541 ,  H01L2225/06586

摘要： In one example, an electronic assembly comprises a first semiconductor device and a second semiconductor device. Each of the first semiconductor device and the second semiconductor devices comprises a substrate comprising a top surface and a conductive structure, an electronic component over the top surface of the substrate, a dielectric material over the top surface of the substrate and contacting a side of the electronic component, a substrate tab at an end of substrate and not covered by the dielectric material, wherein the conductive structure of the substrate is exposed at the substrate tab, and an interconnect electrically coupled to the conductive structure at the substrate tab of the first semiconductor device and the conductive structure at the substrate tab of the second semiconductor device. Other examples and related methods are also disclosed herein.

公开(公告)号：US12033925B2

公开(公告)日：2024-07-09

申请号：US17286709

申请日：2019-10-17

申请人： NAGRAVISION S.A.

发明人： Pascal Aubry ,  Andrew McLauchlan

IPC分类号： H01L23/498 ,  H01L21/66 ,  H01L23/00 ,  H01L23/538 ,  H01L23/552

CPC分类号： H01L23/49816 ,  H01L22/14 ,  H01L23/5386 ,  H01L23/552 ,  H01L24/14 ,  H01L2224/0401 ,  H01L2924/14

摘要： A chip includes a substrate having a first surface and a second surface opposite the first surface, and an integrated circuit mounted on a landing zone on the first surface of the substrate. The chip also includes contacts provided about the first surface in the peripheral region, and wire-bonds providing electrical connections between the integrated circuit and the contacts. The chip further includes solder ball connections provided in the peripheral region on the second surface, and connections provided in the substrate for connecting the electrical contacts on the first surface with the solder ball connections on the second surface. The substrate includes at least one conductive track routed through the landing zone region of the substrate, and the chip is configured such that an alteration in the at least one conductive track prevents operation of the integrated circuit.

公开(公告)号：US20240222291A1

公开(公告)日：2024-07-04

申请号：US18603174

申请日：2024-03-12

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wei-Cheng Wu ,  Chien-Chia Chiu ,  Cheng-Hsien Hsieh ,  Li-Han Hsu ,  Meng-Tsan Lee ,  Tsung-Shu Lin

IPC分类号： H01L23/552 ,  H01L21/56 ,  H01L21/768 ,  H01L23/00 ,  H01L23/31 ,  H01L23/488 ,  H01L23/538

CPC分类号： H01L23/552 ,  H01L21/56 ,  H01L21/76802 ,  H01L21/76877 ,  H01L23/31 ,  H01L23/488 ,  H01L23/5384 ,  H01L24/14

摘要： A semiconductor package includes a semiconductor die, a redistribution structure and connective terminals. The redistribution structure is disposed on the semiconductor die and includes a first metallization tier disposed in between a pair of dielectric layers. The first metallization tier includes routing conductive traces electrically connected to the semiconductor die and a shielding plate electrically insulated from the semiconductor die. The connective terminals include dummy connective terminals and active connective terminals. The dummy connective terminals are disposed on the redistribution structure and are electrically connected to the shielding plate. The active connective terminals are disposed on the redistribution structure and are electrically connected to the routing conductive traces. Vertical projections of the dummy connective terminals fall on the shielding plate.

公开(公告)号：US20240213189A1

公开(公告)日：2024-06-27

申请号：US18595729

申请日：2024-03-05

申请人： Mitsubishi Electric Corporation

发明人： Yuta SUGIYAMA ,  Takeshi OSHIMA ,  Hidenori ISHIBASHI ,  Miki KAGANO ,  Hidenori YUKAWA

IPC分类号： H01L23/66 ,  H01L23/00 ,  H01L23/498 ,  H01L23/552 ,  H03F3/213

CPC分类号： H01L23/66 ,  H01L23/49838 ,  H01L23/552 ,  H01L24/16 ,  H01L24/32 ,  H03F3/213 ,  H01L2223/6627 ,  H01L2223/6655 ,  H01L2224/16146 ,  H01L2224/16155 ,  H01L2224/32146 ,  H01L2224/32175 ,  H01L2924/014 ,  H01L2924/1421 ,  H01L2924/1423 ,  H03F2200/451

摘要： A power amplification high-frequency circuit device includes: an input conversion pin; an output conversion pin; a high-frequency amplifier having an input terminal and an output terminal; a waveguide tube in which an input waveguide tube and an output waveguide tube face each other with a short wall interposed between the input waveguide tube and the output waveguide tube, an upper wall of the input waveguide tube has an input pin insertion hole into which the input conversion pin is inserted while being electrically insulated, an upper wall of the output waveguide tube has an output pin insertion hole into which the output conversion pin is inserted while being electrically insulated, an upper wall has a storage portion having a flat bottom surface, and the high-frequency amplifier is stored in the storage portion with a bottom surface thereof being in close contact with the bottom surface of the storage portion.

公开(公告)号：US12021041B2

公开(公告)日：2024-06-25

申请号：US17509887

申请日：2021-10-25

申请人： Invensas LLC

发明人： Patrick Variot ,  Hong Shen

IPC分类号： H01L23/52 ,  H01L23/31 ,  H01L23/522 ,  H01L23/552

CPC分类号： H01L23/552 ,  H01L23/31 ,  H01L23/5226

摘要： A microelectronic device may include a substrate, a first chip on the substrate, and a second chip on the substrate. A plurality of pillars may be located between the first chip and the second chip, wherein a first end of each pillar of the plurality of pillars is adjacent to the substrate. A spacing among the plurality of pillars is at least equal to a distance sufficient to block electromagnetic interference (EMI) and/or radio frequency interference (RFI) between the first chip and the second chip. The microelectronic device may also include a cover over at least the first chip, the second chip, and the plurality of pillars, wherein a second end of each pillar of the plurality of pillars is at least adjacent to a trench defined within the cover. The trench may include a conductive material therein.

公开(公告)号：US20240204010A1

公开(公告)日：2024-06-20

申请号：US18239708

申请日：2023-08-29

申请人： LG Display Co., Ltd.

发明人： Soyang Choi ,  Youngjin Yi ,  JungJune Kim ,  Yubeen Lim

IPC分类号： H01L27/12 ,  H01L23/552

CPC分类号： H01L27/1248 ,  H01L23/552 ,  H01L27/1225

摘要： A thin film transistor substrate comprises a first thin film transistor on a base substrate, a second thin film transistor on the first thin film transistor, and a first protective pattern between the first thin film transistor and the second thin film transistor, wherein the first thin film transistor includes a first active layer on the base substrate, and a first gate electrode spaced apart from the first active layer, the second thin film transistor includes a second active layer on the base substrate, and a second gate electrode spaced apart from the second active layer, the first active layer includes a first channel portion that overlaps the first gate electrode, the second active layer includes a second channel portion that overlaps the second gate electrode, wherein the first protective pattern overlaps the second channel portion and covers the entire second channel portion on a plane.

公开(公告)号：US20240203903A1

公开(公告)日：2024-06-20

申请号：US18590718

申请日：2024-02-28

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Youngwoo PARK

IPC分类号： H01L23/552 ,  H01L21/56 ,  H01L21/78 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498

CPC分类号： H01L23/552 ,  H01L21/56 ,  H01L21/78 ,  H01L23/3128 ,  H01L23/49838 ,  H01L24/16 ,  H01L2224/16227

摘要： Disclosed are semiconductor packages and methods of fabricating the same. The method inluces forming a semiconductor chip, forming an electromagnetic shield that covers the semiconductor chip, and forming a molding that covers the electromagnetic shield. The electromagnetic shield is electrically connected to a conductor on a side of the semiconductor chip.

公开(公告)号：US20240203901A1

公开(公告)日：2024-06-20

申请号：US18539487

申请日：2023-12-14

申请人： Kioxia Corporation

发明人： Toshihiko OHDA ,  Yuusuke TAKANO

IPC分类号： H01L23/552 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L25/00 ,  H01L25/065

CPC分类号： H01L23/552 ,  H01L21/56 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/49822 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2225/06562

摘要： A semiconductor device includes a wiring board having a first surface and a ground electrode exposed to the first surface, a stacked body provided above the first surface and having a chip structure body and a first resin layer that seals the chip structure body, a second resin layer that seals the stacked body, a third resin layer provided between the wiring board and the stacked body, and a first conductive shield layer provided between the first resin layer and the first surface and between the first resin layer and the second resin layer, and being in contact with the ground electrode. The first conductive shield layer is in contact with the side surface of the first resin layer. When looking the ground electrode from a direction perpendicular to the first surface, the ground electrode is provided outside of the first resin layer.

公开(公告)号：US20240194728A1

公开(公告)日：2024-06-13

申请号：US18536804

申请日：2023-12-12

申请人： Kookmin University Industry Academy Cooperation Foundation

发明人： YOUNG RAG DO

IPC分类号： H01L27/15 ,  G09G3/32 ,  H01L23/552 ,  H01L33/40

CPC分类号： H01L27/156 ,  G09G3/32 ,  H01L23/552 ,  H01L33/405

摘要： A pixel structure and driving method of an ultra-thin device display with alignment and driving electrode switching functions.