公开(公告)号：US10207390B2

公开(公告)日：2019-02-19

申请号：US14017620

申请日：2013-09-04

申请人： EBARA CORPORATION ,  Toshiba Memory Corporation

发明人： Noburu Shimizu ,  Shinro Ohta ,  Koji Maruyama ,  Yoichi Kobayashi ,  Ryuichiro Mitani ,  Shunsuke Nakai ,  Atsushi Shigeta

IPC分类号： B24B49/04 ,  B24B37/013 ,  B24D7/12 ,  G01N21/55 ,  G05B19/40 ,  B24B49/12 ,  G01N21/95 ,  H01L21/66 ,  G05B19/406 ,  B24B49/16 ,  G01B11/06 ,  G05B19/4065

摘要： A processing end point detection method detects a timing of a processing end point (e.g., polishing stop, changing of polishing conditions) by calculating a characteristic value of a surface of a workpiece (an object of polishing) such as a substrate. This method includes producing a spectral waveform indicating a relationship between reflection intensities and wavelengths at a processing end point, with use of a reference workpiece or simulation calculation, based on the spectral waveform, selecting wavelengths of a local maximum value and a local minimum value of the reflection intensities, calculating the characteristic value with respect to a surface, to be processed, from reflection intensities at the selected wavelengths, setting a distinctive point of time variation of the characteristic value at a processing end point of the workpiece as the processing end point, and detecting the processing end point of the workpiece by detecting the distinctive point during processing of the workpiece.

公开(公告)号：US10096482B2

公开(公告)日：2018-10-09

申请号：US14822671

申请日：2015-08-10

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Keung Hui ,  Jin-Ning Sung ,  Jong-I Mou ,  Soon-Kang Huang ,  Yen-Di Tsen

IPC分类号： H01L21/306 ,  B24B49/04 ,  B24B49/16 ,  B24B37/005 ,  B24B37/04 ,  B24B37/10 ,  B24B49/02 ,  B24B51/00 ,  H01L21/66

摘要： An apparatus and method for providing target thickness and surface profile uniformity control of a multi-head chemical mechanical polishing (CMP) process is disclosed. An exemplary method includes providing at least two wafers; determining a surface profile of each of the at least two wafers; determining an operation mode for a chemical mechanical polishing (CMP) process based on the surface profiles of the at least two wafers; determining a CMP polishing recipe for each of the at least two wafers based on the operation mode; and performing the CMP process on the at least two wafers based on the determined CMP polishing recipes.

公开(公告)号：US10040166B2

公开(公告)日：2018-08-07

申请号：US14312641

申请日：2014-06-23

申请人： EBARA CORPORATION

发明人： Osamu Nabeya ,  Tetsuji Togawa ,  Makoto Fukushima ,  Hozumi Yasuda

IPC分类号： B24B37/32 ,  B24B37/20 ,  B24B37/30 ,  B24B47/22 ,  B24B49/16 ,  B24B37/005 ,  B24B37/10 ,  B24B49/00

CPC分类号： B24B37/20 ,  B24B37/005 ,  B24B37/042 ,  B24B37/10 ,  B24B37/105 ,  B24B37/30 ,  B24B37/32 ,  B24B47/22 ,  B24B49/00 ,  B24B49/16 ,  B24B49/18 ,  B24B49/183

摘要： A polishing apparatus has a polishing pad, a top ring for holding a semiconductor wafer, and a vertical movement mechanism operable to move the top ring in a vertical direction. The polishing apparatus also has a distance measuring sensor operable to detect a position of the top ring when a lower surface of the top ring is brought into contact with the polishing pad, and a controller operable to calculate an optimal position of the top ring to polish the semiconductor wafer based on the position detected by the distance measuring sensor. The vertical movement mechanism includes a ball screw mechanism operable to move the top ring to the optimal position.

公开(公告)号：US09808908B2

公开(公告)日：2017-11-07

申请号：US14011668

申请日：2013-08-27

申请人： EBARA CORPORATION

发明人： Hiroyuki Shinozaki

IPC分类号： B24B49/18 ,  B24B49/16

CPC分类号： B24B49/18 ,  B24B49/16

摘要： A method of monitoring dressing of a polishing pad is provided. The method includes: rotating a polishing table that supports the polishing pad; dressing the polishing pad by pressing a dresser against the polishing pad while causing the dresser to oscillate in a radial direction of the polishing pad; calculating a work coefficient representing a ratio of a frictional force between the dresser and the polishing pad to a force of pressing the dresser against the polishing pad; and monitoring dressing of the polishing pad based on the work coefficient.

公开(公告)号：US20170252889A1

公开(公告)日：2017-09-07

申请号：US15599919

申请日：2017-05-19

申请人： EBARA CORPORATION

发明人： Katsuhide WATANABE ,  Masakazu IHARA

IPC分类号： B24B37/005 ,  B24B49/16 ,  B24B37/10 ,  B24B49/18

CPC分类号： B24B37/005 ,  B24B37/107 ,  B24B49/16 ,  B24B49/18

摘要： A polishing apparatus includes a table rotating motor configured to rotate a polishing table about its own axis, a top ring rotating motor configured to rotate a top ring about its own axis, a dresser configured to dress a polishing pad, and a pad-height measuring device configured to measure a height of the polishing pad. The polishing apparatus also includes a diagnostic device configured to calculate an amount of wear of the polishing pad from the height of the polishing pad and to determine the end of a life of the polishing pad based on the amount of the wear of the polishing pad, the torque or current of the table rotating motor, and the torque or current of the top ring rotating motor.

公开(公告)号：US09687955B2

公开(公告)日：2017-06-27

申请号：US13227804

申请日：2011-09-08

申请人： Katsuhide Watanabe ,  Masakazu Ihara

发明人： Katsuhide Watanabe ,  Masakazu Ihara

IPC分类号： B24B49/10 ,  B24B37/005 ,  B24B37/10 ,  B24B49/16 ,  B24B49/18

CPC分类号： B24B37/005 ,  B24B37/107 ,  B24B49/16 ,  B24B49/18

摘要： A polishing apparatus includes a table rotating motor configured to rotate a polishing table about its own axis, a top ring rotating motor configured to rotate a top ring about its own axis, a dresser configured to dress a polishing pad, and a pad-height measuring device configured to measure a height of the polishing pad. The polishing apparatus also includes a diagnostic device configured to calculate an amount of wear of the polishing pad from the height of the polishing pad and to determine the end of a life of the polishing pad based on the amount of the wear of the polishing pad, the torque or current of the table rotating motor, and the torque or current of the top ring rotating motor.

公开(公告)号：US20170095900A1

公开(公告)日：2017-04-06

申请号：US15124991

申请日：2015-03-11

申请人： Universite De Nantes ,  Centre National de la Recherche Scientifique (CNRS)

发明人： Samuel Bonnet ,  Benoît Furet ,  Sébastien Garnier ,  Raphaël Poiree

IPC分类号： B24B23/03 ,  G05B19/404 ,  B24B49/16 ,  G05B19/4065

CPC分类号： B24B23/03 ,  B24B27/0038 ,  B24B49/16 ,  G05B19/404 ,  G05B19/4065 ,  G05B2219/2627 ,  G05B2219/37367 ,  G05B2219/45058

摘要： The invention relates to a method for controlling an automated orbital sander, in which method an electrically powered orbital sander is moved around automatically, at constant pressure, over the surface of an object, along at least one predefined sanding path so as to perform sanding, characterized in that the instantaneous power consumed by the sander along the sanding path is measured and in that the measurement thus taken is processed in order to deduce therefrom information regarding the level of abrasion along said path and/or to detect any sanding incident that has occurred along the latter.

公开(公告)号：US09550273B2

公开(公告)日：2017-01-24

申请号：US14736390

申请日：2015-06-11

申请人： Kabushiki Kaisha Toshiba

发明人： Shiguma Kato ,  Yuichiro Fujiyama ,  Takumi Takahashi ,  Taku Maruo

IPC分类号： B24B49/10 ,  B24B49/16 ,  H01L21/66 ,  B24B21/04

CPC分类号： B24B49/16 ,  B24B21/04 ,  H01L22/12 ,  H01L22/20

摘要： According to an embodiment, a polishing device includes a stage, a polishing unit, and a strain measuring unit. The stage is rotatable together with a semiconductor wafer. The polishing unit polishes the rear surface of the semiconductor wafer mounted on the stage beside the stage. The strain measuring unit measures a first strain that is a radial-direction strain of the semiconductor wafer and a second strain that is a circumferential-direction strain of the semiconductor wafer during the polishing.

摘要翻译： 根据实施例，抛光装置包括台，抛光单元和应变测量单元。 台架可与半导体晶片一起旋转。 抛光单元抛光安装在舞台旁边的舞台上的半导体晶片的后表面。 应变测量单元测量作为半导体晶片的径向应变的第一应变和在抛光期间作为半导体晶片的周向应变的第二应变。

公开(公告)号：US20160176015A1

公开(公告)日：2016-06-23

申请号：US14978501

申请日：2015-12-22

申请人： FerRobotics Compliant Robot Technology GmbH

发明人： Ronald Naderer

IPC分类号： B24B49/00 ,  G05B19/416 ,  B24B49/16

CPC分类号： B24B49/006 ,  B24B49/16 ,  B25J9/1694 ,  G05B19/416 ,  G05B2219/40071 ,  G05B2219/43132 ,  G05B2219/45058

摘要： A robot-supported grinding method is described. In accordance with one example of the invention, the grinding method includes contacting a surface of a workpiece with a rotating grinding tool, whereby either the grinding tool or the workpiece is mechanically coupled to the tool center point (TCP) of a manipulator. The method further includes controlling an actuator that influences the grinding tool or the workpiece to produce a grinding force between the grinding tool and the workpiece, as well as measuring an actual deflection of the actuator. The rotational velocity of the grinding tool is adjusted depending on the measured actual deflection of the actuator and a reference deflection of the actuator.

摘要翻译： 描述了机器人支撑的研磨方法。 根据本发明的一个示例，研磨方法包括使工件的表面与旋转的研磨工具接触，由此磨削工具或工件机械地联接到操纵器的工具中心点（TCP）。 该方法还包括控制影响研磨工具或工件的致动器，以在研磨工具和工件之间产生研磨力，以及测量致动器的实际偏转。 研磨工具的旋转速度根据测量的致动器的实际偏转和致动器的基准偏转来调整。

公开(公告)号：US09296083B2

公开(公告)日：2016-03-29

申请号：US14109011

申请日：2013-12-17

申请人： Kabushiki Kaisha Toshiba

发明人： Dai Fukushima ,  Jun Takayasu ,  Takashi Watanabe

IPC分类号： B24B49/16 ,  B24B49/08 ,  B24B37/005 ,  B24B37/30 ,  B24B37/04 ,  H01L21/67 ,  B24B49/10 ,  H01L21/02

CPC分类号： B24B37/005 ,  B24B37/042 ,  B24B37/30 ,  B24B49/08 ,  B24B49/10 ,  B24B49/16 ,  H01L21/02024 ,  H01L21/67219

摘要： A polishing apparatus including a membrane including a pressure chamber and being configured to hold a wafer; a polishing portion including a polish pad contacting a polish surface of the wafer when polishing the wafer; a monitoring portion monitoring a state of inflation of the pressure chamber; and a controller controlling polishing of the wafer by the polishing portion based on a result of monitoring by the monitoring portion.

摘要翻译： 一种抛光装置，包括：膜，包括压力室并被构造成保持晶片; 抛光部分，其包括在抛光晶片时与抛光晶片接触的抛光垫; 监视压力室的充气状态的监视部分; 以及控制器，其基于所述监视部的监视结果，通过所述研磨部控制所述晶片的研磨。