公开(公告)号：US11022902B2

公开(公告)日：2021-06-01

申请号：US16623647

申请日：2018-05-14

Applicant: ASML Netherlands B.V.

Inventor： Arie Jeffrey Den Boef ,  Patricius Aloysius Jacobus Tinnemans ,  Haico Victor Kok ,  William Peter Van Drent ,  Sebastianus Adrianus Goorden

IPC: G03B27/72 ,  G03F7/20

Abstract: The invention relates to a sensor comprising: a radiation source to emit radiation having a coherence length towards a sensor target; and a polarizing beam splitter to split radiation diffracted by the sensor target into radiation with a first polarization state and radiation with a second polarization state, wherein the first polarization state is orthogonal to the second polarization state, and wherein the sensor is configured such that after passing the polarizing beam splitter radiation with the first polarization state has an optical path difference relative to radiation with the second polarization state that is larger than the coherence length.

公开(公告)号：US11022897B2

公开(公告)日：2021-06-01

申请号：US16194769

申请日：2018-11-19

Applicant: ASML NETHERLANDS B.V.

Inventor： Joannes Jitse Venselaar ,  Anagnostis Tsiatmas ,  Samee Ur Rehman ,  Paul Christiaan Hinnen ,  Jean-Pierre Agnes Henricus Marie Vaessen ,  Nicolas Mauricio Weiss ,  Gonzalo Roberto Sanguinetti ,  Thomai Zacharopoulou ,  Martijn Maria Zaal

IPC: G01D1/00 ,  G03F7/20 ,  G06F17/12

Abstract: Methods of determining information about a patterning process. In a method, measurement data from a metrology process applied to each of a plurality of metrology targets on a substrate is obtained. The measurement data for each metrology target includes at least a first contribution and a second contribution. The first contribution is from a parameter of interest of a patterning process used to form the metrology target. The second contribution is from an error in the metrology process. The method further includes using the obtained measurement data from all of the plurality of metrology targets to obtain information about an error in the metrology process, and using the obtained information about the error in the metrology process to extract a value of the parameter of interest for each metrology target.

公开(公告)号：US20210157248A1

公开(公告)日：2021-05-27

申请号：US16613551

申请日：2018-04-13

Applicant: ASML Netherlands B.V. ,  ASML Holding N.V.

Inventor： Sebastianus Adrianus GOORDEN ,  Johannes Antonius Gerardus AKKERMANS ,  Simon Reinald HUISMAN ,  Tamer Mohamed Tawfik Ahmed Mohamed ELAZHARY

IPC: G03F9/00 ,  G01B11/00

Abstract: Disclosed is a metrology sensor apparatus comprising: an illumination system operable to illuminate a metrology mark in on a substrate with illumination radiation; an optical collection system configured to collect scattered radiation, following scattering of the illumination radiation by the metrology mark; and a wavelength dependent spatial filter for spatially filtering the scattered radiation, the wavelength dependent spatial filter having a spatial profile dependent on the wavelength of the scattered radiation. The wavelength dependent spatial filter may comprise a dichroic filter operable to substantially transmit scattered radiation within a first wavelength range and substantially block scattered radiation within a second wavelength range and at least one second filter operable to substantially block scattered radiation at least within the first wavelength range and the second wavelength range.

公开(公告)号：US11016395B2

公开(公告)日：2021-05-25

申请号：US16467124

申请日：2017-12-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Yu Cao ,  Yen-Wen Lu ,  Peng Liu ,  Rafael C. Howell ,  Roshni Biswas

IPC: G03F7/20 ,  G03F1/36

Abstract: A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function represents a continuous transmission mask and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.

公开(公告)号：US20210141312A1

公开(公告)日：2021-05-13

申请号：US17151291

申请日：2021-01-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Günes NAKIBOGLU ,  Coen Hubertus Matheus BALTIS ,  Siegfried Alexander TROMP ,  Yuri Johannes Gabriël VAN DE VIJVER ,  Bert Dirk SCHOLTEN ,  Daan Daniel Johannes Antonius VAN SOMMERE ,  Mark Johannes Hermanus FRENCKEN

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/687

Abstract: A substrate holder for use in a lithographic apparatus and configured to support a substrate, the substrate holder including a main body having a main body surface; a plurality of burls projecting from the main body surface to support the substrate spaced apart from the main body surface; and a liquid control structure provided in a peripheral region of the main body surface and configured to cause liquid to preferentially flow toward the periphery of the main body surface.

公开(公告)号：US11003096B2

公开(公告)日：2021-05-11

申请号：US16719457

申请日：2019-12-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Timotheus Franciscus Sengers ,  Marcus Adrianus Van De Kerkhof ,  Mark Kroon ,  Kees Van Weert

IPC: G03B27/58 ,  G03F7/20 ,  G03F9/00

Abstract: A lithographic apparatus is provided that has a sensor at substrate level, the sensor including a radiation receiver, a transmissive plate supporting the radiation receiver, and a radiation detector, wherein the sensor is arranged to avoid loss of radiation between the radiation receiver and a final element of the radiation detector.

公开(公告)号：US11003094B2

公开(公告)日：2021-05-11

申请号：US16376673

申请日：2019-04-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Raymond Wilhelmus Louis Lafarre ,  Nicolaas Ten Kate ,  Nina Vladimirovna Dziomkina ,  Yogesh Pramod Karade

IPC: G03B27/52 ,  G03B27/42 ,  G03F7/20 ,  H01L21/687 ,  C23C16/44

Abstract: A substrate holder for a lithographic apparatus has a planarization layer provided on a surface thereof. The planarization layer provides a smooth surface for the formation of an electronic component such as a thin film electronic component. The planarization layer may be provided in multiple sub layers. The planarization layer may smooth over roughness caused by removal of material from a blank to form burls on the substrate holder.

公开(公告)号：US11003093B2

公开(公告)日：2021-05-11

申请号：US16696263

申请日：2019-11-26

Applicant: ASML Netherlands B.V.

Inventor： Venugopal Vellanki ,  Vivek Kumar Jain ,  Stefan Hunsche

IPC: G06F30/398 ,  G06N20/00 ,  G03F7/00 ,  G03F1/60 ,  G03F1/84 ,  G06F30/20 ,  G03F7/20 ,  G06F119/18

Abstract: A defect prediction method for a device manufacturing process involving processing one or more patterns onto a substrate, the method including; determining values of one or more processing parameters under which the one or more patterns are processed; and determining or predicting, using the values of the one or more processing parameters, an existence, a probability of existence, a characteristic, and/or a combination selected from the foregoing, of a defect resulting from production of the one or more patterns with the device manufacturing process.

公开(公告)号：US20210134556A1

公开(公告)日：2021-05-06

申请号：US17251770

申请日：2019-05-23

Applicant: ASML Netherlands B.V.

Inventor： Long MA

IPC: H01J37/22 ,  H01J37/244 ,  H01J37/28

Abstract: A wafer inspection system is disclosed. According to certain embodiments, the system includes an electron detector that includes circuitry to detect secondary electrons or backscattered electrons (SE/B SE) emitted from a wafer. The electron beam system also includes a current detector that includes circuitry to detect an electron-beam-induced current (EBIC) from the wafer. The electron beam system further includes a controller having one or more processors and a memory, the controller including circuitry to: acquire data regarding the SE/BSE; acquire data regarding the EBIC; and determine structural information of the wafer based on an evaluation of the SE/BSE data and the EBIC data.

公开(公告)号：US20210132514A1

公开(公告)日：2021-05-06

申请号：US16604976

申请日：2018-01-31

Applicant: ASML Netherlands B.V.

Inventor： Gosse Charles DE VRIES ,  Nicolaas TEN KATE

IPC: G03F7/20

Abstract: A lithographic apparatus arranged to project a pattern from a patterning device onto a substrate, comprising at least one housing comprising at least one internal wall, at least one optical component arranged within at least one chamber defined at least in part by the at least one internal wall and configured to receive a radiation beam and a cooling apparatus arranged to cool at least a portion of the at least one internal wall to a temperature below that of the at least one optical component.