Abstract:
Process for producing metrological structures particularly for direct measurement of errors introduced by alignment systems, whose peculiarity consists in performing, on a same substrate, metrological alignment markings and processed alignment markings according to arrays of preset numerical size.
Abstract:
A filter acting on digital image signals for apparatus of the video type includes at least first and second processing units adapted to elect an image edge, each processing unit includes an inferential circuit operating on fuzzy logic, which has first and second input terminals and an output terminal, and first and second comparison elements each having first and second input terminals and an output terminal, the input terminals being intended for receiving discrete digital signals of an image. The output terminals of the first and second comparison elements in the first processing unit are respectively connected to the first and second input terminals of the inferential circuit included in the first processing unit, and the output terminals of the first and second comparison elements in the second processing unit are respectively connected to the first and second input terminals of the inferential circuit included in the second processing unit.
Abstract:
A controlled gain transconductor (20) which comprises a transconductance stage (3) having at least two input terminals (I1, I2) and at least two output terminals (O1, O2), an active load (4) connected to the output terminals of the transconductance stage and a control circuit (5) for the active load (4) connected between said output terminals (O1, O2) and the active load (4).Also provided is a circuit portion (10) being a replica of the transconductance stage (3), the active load (4) and the control circuit (5). This replicated portion (10) has an output connected to the control circuit (5) of the transconductor (20) to provide a predetermined voltage value (Vc) required for adjusting the DC gain of the device.
Abstract:
A circuit assembly for an operational amplifier has an input stage with first and second input terminals and an output terminal. An output stage has a first input terminal coupled to the output terminal of the input stage, a second input terminal, and an output terminal. A feedback circuit is coupled between the output terminal of the output stage and the second input terminal of the input stage. An interconnection circuit is coupled to the first and second input terminals and the output terminal of the output stage and to a reference voltage source. The interconnection circuit has first, second, and third modes, such that the second input terminal of the output stage is coupled to the reference voltage source when the interconnection circuit is in the first mode. The first input terminal of the output stage is coupled to the reference voltage source when the interconnection circuit is in the second mode, and the first input terminal of the output stage is coupled to the output terminal of the output stage and the second input terminal of the output stage is coupled to the reference voltage source when the interconnection circuit is in the third mode.
Abstract:
A television signal scanning conversion device of the type comprising at least one filtering block having a plurality of digital inputs which receive through an interface components of an interlaced television signal comprises also at lease one calculation block connected to the signal inputs and operating with fuzzy logic. The calculation block is capable of executing a switch between at least two different interpolation procedures, to wit interfield and intrafield.
Abstract:
A regulating circuit for discharging non-volatile memory cells in an electrically programmable memory device, of the type which comprises at least one switch connected between a programming voltage reference and a line shared by the source terminals of the transistors forming said memory cells, and at least one discharge connection between said common line to the source terminals and a ground voltage reference, further comprises a second connection to ground of the line in which a current generator is connected and a normally open switch. Also provided is a logic circuit connected to the line to compare the voltage value present on the latter with a predetermined value, and to output a control signal for causing the switch to make. This solution allows a slow discharging phase of the line to be effected at the end of the erasing phase.
Abstract:
A byte erasable memory with an EEPROM type functionality that can be integrated in a fully compatible way with a standard FLASH process is composed by a matrix of FLASH cells organized in n bytes, each of m bits, addressable through a plurality of wordlines and bitlines. The EEPROM-type memory has an auxiliary selection structure composed of an n number of byte select transistors, a plurality of individually selectable source biasing lines and a plurality of select lines in the same number of the wordlines and selectable in a biunivocal way with the wordlines. The cells of a byte have a common source that is accessed and individually selectable through the respective select transistor. EEPROM functionality is obtained without any modification of the standard FLASH fabrication process by splitting the voltage applied between a control gate and the respective common source region of the cells that compose a certain selected byte about a common ground potential, during a byte erasing phase thus reducing the electrical stress induced on deselected cells.
Abstract:
A high conversion speed analog-to-digital converter is constituted by a plurality of comparison cells which in successive steps determine first the four most significant bits of the analog-to-digital conversion and then the least significant bits of the same, having first accomplished the reconversion of the four most significant bits to analog and their subsequent subtraction from the input signal.
Abstract:
An integrated circuit structure is disclosed wherein an EPROM cell has an active area formed by the same operations as are carried out to form a P region intended to contain an N-channel MOS transistor, source and drain regions formed by the same operations as are carried out to form the source and drain regions of said transistor, a control electrode consisting of an N+ region formed by the same operations as are carried out to form deep regions intended to contact buried N+ regions, and a floating gate electrode consisting of a layer of conductive material formed by the same operations as are carried out to form the gate electrodes of the MOS transistors in the integrated circuit.The EPROM cell can, therefore, be formed in a mixed integrated circuit with no need for purposely added processing steps.
Abstract:
A method for programming redundancy registers in a column redundancy integrated circuitry for a semiconductor memory device with columns of memory elements grouped together to form portions of a bi-dimensional array of memory elements. The column redundancy circuitry comprises a plurality of non-volatile memory registers wherein each register is associated with a respective redundancy column of redundancy memory elements and each register is programmable to store an address of a defective column and an identifying code for identifying the portion of the bi-dimensional array to which the defective column belongs. When being programmed, each non-volatile memory register is supplied with column address signals and with a first subset of row address signals. The column address signals carry the address of a defective column and the first subset of row address signals carry the identifying code. One signal of a second subset of the row address signals is used to select one non-volatile memory register among the plurality of registers such that the defective column address and the identifying code carried by the column address signals and by the first subset of the row address signals are programmed into the selected non-volatile memory register. Using existing column and row address lines to program the redundancy memory registers reduces the need to generate dedicated on-chip signals, thereby minimizing the size of the memory device.