公开(公告)号：US20180292473A1

公开(公告)日：2018-10-11

申请号：US15481805

申请日：2017-04-07

Applicant: CROCUS Technology SA

Inventor： Jeffrey Childress ,  Romain Foissac ,  Kenneth MacKay

IPC: G01R33/09 ,  G01R33/00

Abstract: A magnetic sensor cell including a magnetic tunnel junction including a reference layer having a reference magnetization oriented substantially parallel to the plane of the reference layer, a sense layer having a sense magnetization, and a tunnel barrier layer between the sense and reference layers. The sense layer includes an intrinsic anisotropy substantially perpendicular to the plane of the sense layer such that the sense magnetization is orientable between an initial direction perpendicular to the plane of the sense layer and a direction parallel to the plane of the sense layer; the intrinsic anisotropy having in anisotropy field being above 150 Oe.

公开(公告)号：US10062833B2

公开(公告)日：2018-08-28

申请号：US15516079

申请日：2015-09-24

Applicant: CROCUS Technology SA

Inventor： Bertrand Cambou

IPC: H01L43/02 ,  G11C11/16 ,  H01L43/12 ,  H01L43/08 ,  H01L27/22 ,  H01L43/10

CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1673 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A MRAM-based magnetic device including an electrical interconnecting device including: a magnetic tunnel junction; a strap portion electrically connecting a lower end of the magnetic tunnel junction; a current line portion electrically connecting an upper end of the magnetic tunnel junction; an upper metallic stud electrically connecting a lower metallic stud through a via; the strap portion being in direct electrical contact with the via, such that a current passing in the magnetic tunnel junction flows directly between the strap portion and the via and between the via and the lower metallic stud or the upper metallic stud.

公开(公告)号：US10003014B2

公开(公告)日：2018-06-19

申请号：US14310844

申请日：2014-06-20

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  CROCUS TECHNOLOGY

Inventor： Michael C. Gaidis ,  Erwan Gapihan ,  Rohit Kilaru ,  Eugene J. O'Sullivan

IPC: G11C11/16 ,  H01L43/08 ,  H01L43/12 ,  H01L21/311 ,  H01L43/02 ,  H01L43/10

CPC classification number: H01L43/08 ,  B81C2201/0132 ,  B81C2201/0142 ,  B81C2201/0143 ,  G11C11/161 ,  G11C2211/5615 ,  H01L21/31105 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A method of forming a memory device that in one embodiment may include forming a magnetic tunnel junction on a first electrode using an electrically conductive mask and subtractive etch method. Following formation of the magnetic tunnel junction, at least one dielectric layer is deposited to encapsulate the magnetic tunnel junction. Ion beam etching/Ion beam milling may then remove the portion of the at least one dielectric layer that is present on the electrically conductive mask, wherein a remaining portion of the at least one dielectric layer is present over the first electrode. A second electrode may then be formed in contact with the electrically conductive mask.

公开(公告)号：US20170110172A1

公开(公告)日：2017-04-20

申请号：US15318715

申请日：2015-05-28

Applicant: CROCUS Technology SA

Inventor： Quentin Stainer

IPC: G11C11/16

CPC classification number: G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693 ,  G11C11/5607

Abstract: A multibit MRAM cell including a magnetic tunnel junction including a sense layer having a freely orientable sense magnetization; a tunnel barrier layer; and a synthetic antiferromagnet storage layer having a first and second storage layer. The sense magnetization induces a dipolar field having a magnitude above a spin-flop field of the storage layer. The MRAM cell also includes aligning means for aligning the sense magnetization in a plurality of distinct orientations such as to encode a plurality of distinct logic states in the MRAM cell. The present disclosure also concerns a method for operating the multibit MRAM cell.

公开(公告)号：US09620187B2

公开(公告)日：2017-04-11

申请号：US14772916

申请日：2014-02-21

Applicant: Crocus Technology SA

Inventor： Quentin Stainer

IPC: G11C11/16 ,  H01L43/08 ,  H01L43/02

CPC classification number: G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/02 ,  H01L43/08

Abstract: Self-referenced magnetic random access memory (MRAM) cell including a magnetic tunnel junction including a sense layer; a storage layer having a storage magnetization; a tunnel barrier layer between the sense and the storage layers; and an antiferromagnetic layer exchange-coupling the storage layer such that the storage magnetization can be pinned when the antiferromagnetic layer is below a critical temperature and freely varied when the antiferromagnetic layer is heated at or above the critical temperature. The sense layer includes a first sense layer having a first sense magnetization, a second sense layer having a second sense magnetization and spacer layer between the first and second sense layers. The MRAM cell can be read with low power consumption.

公开(公告)号：US20160336507A1

公开(公告)日：2016-11-17

申请号：US15222585

申请日：2016-07-28

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  CROCUS TECHNOLOGY

Inventor： Anthony J. Annunziata ,  Erwan Gapihan

IPC: H01L43/08 ,  H01L43/02

CPC classification number: H01L43/08 ,  H01L43/02 ,  H01L43/12

Abstract: A magnetoresistive memory cell includes a magnetoresistive tunnel junction stack and a dielectric encapsulation layer covering sidewall portions of the stack and being opened over a top of the stack. A conductor is formed in contact with a top portion of the stack and covering the encapsulation layer. A magnetic liner encapsulates the conductor and is gapped apart from the encapsulating layer covering the sidewall portions of the stack.

公开(公告)号：US20160276579A1

公开(公告)日：2016-09-22

申请号：US15170359

申请日：2016-06-01

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  CROCUS TECHNOLOGY

Inventor： Michael C. Gaidis ,  Erwan Gapihan ,  Rohit Kilaru ,  Eugene J. O'Sullivan

IPC: H01L43/08 ,  H01L43/12 ,  G11C11/16 ,  H01L43/02 ,  H01L43/10

CPC classification number: H01L43/08 ,  B81C2201/0132 ,  B81C2201/0142 ,  B81C2201/0143 ,  G11C11/161 ,  G11C2211/5615 ,  H01L21/31105 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A method of forming a memory device that in one embodiment may include forming a magnetic tunnel junction on a first electrode using an electrically conductive mask and subtractive etch method. Following formation of the magnetic tunnel junction, at least one dielectric layer is deposited to encapsulate the magnetic tunnel junction. Ion beam etching/Ion beam milling may then remove the portion of the at least one dielectric layer that is present on the electrically conductive mask, wherein a remaining portion of the at least one dielectric layer is present over the first electrode. A second electrode may then be formed in contact with the electrically conductive mask.

公开(公告)号：US09336846B2

公开(公告)日：2016-05-10

申请号：US14762264

申请日：2014-01-16

Applicant: CROCUS Technology SA

Inventor： Ioan Lucian Prejbeanu ,  Jerome Moritz ,  Bernard Dieny

IPC: G11C11/16 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

CPC classification number: G11C11/161 ,  G11C11/16 ,  G11C11/1675 ,  G11C2211/5615 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: MRAM element having a magnetic tunnel junction including a reference layer, a storage layer, a tunnel barrier layer between the reference and storage layers, and a storage antiferromagnetic layer. The storage antiferromagnetic layer has a first function of exchange-coupling a storage magnetization of the storage layer and a second function of heating the magnetic tunnel junction when a heating current in passed in the magnetic tunnel junction. The MRAM element has better data retention and low writing temperature.

Abstract translation: MRAM元件具有包括参考层的磁性隧道结，存储层，参考层和存储层之间的隧道势垒层，以及存储反铁磁层。 存储反铁磁层具有交换耦合存储层的存储磁化的第一功能和当通过磁性隧道结中的加热电流时加热磁性隧道结的第二功能。 MRAM元件具有更好的数据保留和低写入温度。

公开(公告)号：US09324937B1

公开(公告)日：2016-04-26

申请号：US14666363

申请日：2015-03-24

Applicant: International Business Machines Corporation ,  Crocus Technology Inc.

Inventor： Anthony J. Annunziata ,  Erwan Gapihan

IPC: H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  H01L43/10

CPC classification number: H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A thermally assisted magnetoresistive random access memory (TAS-MRAM) device includes a magnetic tunnel junction interposed between a first electrical contact and a second electrical contact. The TAS-MRAM device further includes a dielectric layer that is formed on an upper surface of the first electrical contact and that encapsulates the second electrical contact. The dialectic layer has at least one vacuum cavity between an adjacent outer wall of the magnetic tunnel junction and the dielectric layer.

Abstract translation: 热辅助磁阻随机存取存储器（TAS-MRAM）装置包括介于第一电触头和第二电触点之间的磁隧道结。 TAS-MRAM器件还包括形成在第一电触头的上表面上并封装第二电触点的电介质层。 辩证层在磁性隧道结的相邻外壁和电介质层之间具有至少一个真空腔。

公开(公告)号：US09324936B2

公开(公告)日：2016-04-26

申请号：US14431140

申请日：2013-09-12

Applicant: CROCUS Technology SA

Inventor： Ioan Lucian Prejbeanu ,  Bernard Dieny ,  Kenneth MacKay ,  Bertrand Cambou

IPC: H01L43/00 ,  H01L29/82 ,  H01L43/02 ,  H03F15/00 ,  G11C11/16 ,  H01L43/10 ,  H03K19/18

CPC classification number: H01L43/02 ,  G11C11/16 ,  G11C11/1675 ,  H01L43/10 ,  H03F15/00 ,  H03K19/18

Abstract: A magnetic logic unit (MLU) cell includes a first and second magnetic tunnel junction, each including a first magnetic layer having a first magnetization, a second magnetic layer having a second magnetization, and a barrier layer; and a field line for passing a field current such as to generate an external magnetic field adapted to adjust the first magnetization. The first and second magnetic layers and the barrier layer are arranged such that the first magnetization is magnetically coupled antiparallel with the second magnetization through the barrier layer. The MLU cell also includes a biasing device arranged for applying a static biasing magnetic field oriented substantially parallel to the external magnetic field such as to orient the first magnetization at about 90° relative to the second magnetization, the first and second magnetizations being oriented symmetrically relative to the direction of the external magnetic field.

Abstract translation: 磁逻辑单元（MLU）单元包括第一和第二磁性隧道结，每个包括具有第一磁化的第一磁性层，具有第二磁化的第二磁性层和阻挡层; 以及用于通过场电流的场线，以产生适于调整第一磁化的外部磁场。 第一和第二磁性层和阻挡层被布置成使得第一磁化与通过阻挡层的第二磁化反平行地磁耦合。 MLU单元还包括偏置装置，其被布置成施加基本上平行于外部磁场定向的静态偏置磁场，以便相对于第二磁化将第一磁化定向成约90°，第一和第二磁化定向对称相对 到外部磁场的方向。