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41.发明申请公开(公告)号：US20180158497A1
公开(公告)日：2018-06-07
申请号：US15578841
申请日：2016-05-31
申请人： CROCUS Technology SA
发明人： Quentin Stainer
CPC分类号： G11C11/161 , G06G7/14 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01F10/3254 , H01F10/3286 , H01L43/08 , H03F15/00
摘要： A magnetic device configured to perform an analog adder circuit function and including a plurality of magnetic units. Each magnetic unit includes n magnetic tunnel junctions electrically connected in series via a current line. Each magnetic tunnel junction includes a storage magnetic layer having a storage magnetization, a sense magnetic layer having a sense magnetization, and a tunnel barrier layer. Each magnetic unit also includes n input lines, each being configured to generate a magnetic field adapted for varying a direction of the sense magnetization and a resistance of the n magnetic tunnel junctions, based on an input. Each of the n magnetic units is configured to add said n inputs to generate an output signal that varies in response to the n resistances.
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公开(公告)号：US09978434B2
公开(公告)日：2018-05-22
申请号：US15516085
申请日：2015-10-02
申请人： CROCUS Technology SA
发明人： Yann Conraux
IPC分类号： G11C11/16
CPC分类号： G11C11/1675 , G11C11/1673 , G11C11/1693
摘要： Method for programming a magnetic device including a plurality of magnetic logical unit MLU cells using a single programming current, each MLU cell includes a storage magnetic layer having a storage magnetization that is pinned at a low threshold temperature and freely orientable at a high threshold temperature. A programming line is physically separated from each of the plurality of MLU cells and configured for passing a programming current pulse for programming any one of the plurality of MLU cells. The method includes: passing the programming current in the field line for heating the magnetic tunnel junction of each of the plurality of MLU cells at the high threshold temperature such as to unpin the second magnetization; wherein the programming current is further adapted for generating a programming magnetic field adapted for switching the storage magnetization of each of the plurality of MLU cells in a programmed direction.
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公开(公告)号：US09947381B2
公开(公告)日：2018-04-17
申请号：US15318715
申请日：2015-05-28
申请人： CROCUS Technology SA
发明人： Quentin Stainer
IPC分类号： G11C11/16
CPC分类号： G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/1693 , G11C11/5607
摘要： A multibit MRAM cell including a magnetic tunnel junction including a sense layer having a freely orientable sense magnetization; a tunnel barrier layer; and a synthetic antiferromagnet storage layer having a first and second storage layer. The sense magnetization induces a dipolar field having a magnitude above a spin-flop field of the storage layer. The MRAM cell also includes aligning means for aligning the sense magnetization in a plurality of distinct orientations such as to encode a plurality of distinct logic states in the MRAM cell. The present disclosure also concerns a method for operating the multibit MRAM cell.
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公开(公告)号：US09866182B2
公开(公告)日：2018-01-09
申请号：US15154776
申请日：2016-05-13
CPC分类号： H03F1/3247 , G11C11/16 , G11C11/161 , G11C11/1673 , G11C11/1675 , H03F1/02 , H03F1/0233 , H03F3/195 , H03F3/24 , H03F15/00 , H03F2200/102 , H03F2201/3227 , H04B1/04 , H04B2001/0425 , H04B2001/0433 , H04B2001/045
摘要： A circuit has a magnetic device to produce a pre-distorted signal from a sinusoidal input signal. The magnetic device has physical attributes selected to produce characteristics of the pre-distorted signal. A power amplifier is coupled to the magnetic device. The power amplifier processes the pre-distorted signal to produce an output signal with reduced nonlinear behavior associated with the power amplifier.
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公开(公告)号：US20180003781A1
公开(公告)日：2018-01-04
申请号：US15543614
申请日：2015-12-23
申请人： CROCUS Technology SA
发明人： Sebastien BANDIERA
CPC分类号： G01R33/098 , B82Y25/00 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/3254
摘要： A magnetic sensor device for sensing an external magnetic field includes a plurality of MLU cells, each MLU cell having a magnetic tunnel junction including a sense layer having a sense magnetization freely orientable in the external magnetic field, a storage layer having a storage magnetization; and a tunnel barrier layer between the sense layer and the storage layer. The magnetic sensor device includes a stress inducing device configured for applying an anisotropic mechanical stress on the magnetic tunnel junction such as to induce a stress-induced magnetic anisotropy on at least one of the sense layer and the storage layer. The stress-induced magnetic anisotropy induced by the stress inducing device corresponds substantially to a net magnetic anisotropy of the at least one of the sense layer and the storage layer. The magnetic sensor device can be programmed easily and has improved sensitivity.
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46.发明申请公开(公告)号：US20170371008A1
公开(公告)日：2017-12-28
申请号：US15543619
申请日：2015-12-23
申请人： CROCUS Technology SA
发明人： Sebastien BANDIERA
CPC分类号： G01R33/098 , G01D5/16 , G01R33/0029 , G01R33/096 , G11C11/1659 , G11C11/1673
摘要： A magnetic logic unit (MLU) cell for sensing magnetic fields, including: a magnetic tunnel junction including a storage layer having a storage magnetization, a sense layer having a sense magnetization; a tunnel barrier layer between the storage layer and the sense layer; and a pinning layer pinning the storage magnetization at a low threshold temperature and freeing it at a high threshold temperature. The sense magnetization is freely alignable at the low and high threshold temperatures and the storage layer induces an exchange bias field magnetically coupling the sense layer such that the sense magnetization tends to be aligned antiparallel or parallel to the storage magnetization. The tunnel barrier layer is configured for generating an indirect exchange coupling between the tunnel barrier layer and the sense layer providing an additional exchange bias field.
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公开(公告)号：US09841266B2
公开(公告)日：2017-12-12
申请号：US14863121
申请日：2015-09-23
发明人： Lucien Lombard , Bertrand F. Cambou , Ken Mackay
摘要： A device has a flexible substrate supporting an array of magnetic sensors exposed to a uniform external magnetic field. One or more controllers receive magnetic sensor signals from the magnetic sensors. The one or more controllers collect reference magnetic sensor signals when the flexible substrate is aligned with the uniform external magnetic field. The one or more controllers collect first polarity magnetic sensor signals in response to deformation of the flexible substrate in a first direction. The one or more controllers collect second polarity magnetic sensor signals in response to deformation of the flexible substrate in a second direction. The magnetic sensor signals establish a profile of the orientation of the flexible substrate with respect to the uniform external magnetic field.
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公开(公告)号：US09728711B2
公开(公告)日：2017-08-08
申请号：US14787957
申请日：2014-04-11
申请人： Crocus Technology SA
CPC分类号： H01L43/02 , G11C11/161 , G11C11/1675 , H01L27/222 , H01L43/08 , H01L43/10
摘要： MRAM cell including a magnetic tunnel junction including a reference layer, a storage layer having a storage magnetization, a tunnel barrier layer between the reference and the storage layers; and an antiferromagnetic layer exchange-coupling the storage layer such as to pin the storage magnetization at a low temperature threshold and free it at a high temperature threshold. The storage layer includes a first ferromagnetic layer in contact with the tunnel barrier layer, a second ferromagnetic layer in contact with the antiferromagnetic layer, and a low saturation magnetization storage layer including a ferromagnetic material and a non-magnetic material. The MRAM cell can be written with improved reliability.
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49.发明授权公开(公告)号：US09689936B2
公开(公告)日：2017-06-27
申请号：US14801797
申请日：2015-07-16
CPC分类号： G01R33/098 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： An apparatus includes circuits including a first circuit and a second circuit, each circuit including subarrays of magnetic tunnel junctions, where: (1) the magnetic tunnel junctions in each subarray are arranged in rows, the magnetic tunnel junctions in each row are connected in series, and the rows are connected in parallel; and the subarrays are connected in series. The apparatus further comprises a field line configured to generate a first magnetic field for configuring an operating point of the first circuit based on a current flow through the field line, wherein impedance of one or more of the magnetic tunnel junctions in each of the plurality of rows of each subarray of magnetic tunnel junctions included in the first circuit is configured based on the first magnetic field.
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公开(公告)号：US09679626B2
公开(公告)日：2017-06-13
申请号：US14294239
申请日：2014-06-03
发明人： Neal Berger , Jean-Pierre Nozières
CPC分类号： G11C11/1675 , G11C11/16 , G11C11/1673
摘要： The present disclosure concerns a magnetic random access memory cell containing a magnetic tunnel junction formed from an insulating layer comprised between a sense layer and a storage layer. The present disclosure also concerns a method for writing and reading the memory cell comprising, during a write operation, switching a magnetization direction of said storage layer to write data to said storage layer and, during a read operation, aligning magnetization direction of said sense layer in a first aligned direction and comparing said write data with said first aligned direction by measuring a first resistance value of said magnetic tunnel junction. The disclosed memory cell and method allow for performing the write and read operations with low power consumption and an increased speed.
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