公开(公告)号：US20210269940A1

公开(公告)日：2021-09-02

申请号：US17158652

申请日：2021-01-26

Applicant: Fujikoshi Machinery Corp.

Inventor： Keigo HOSHIKAWA ,  Takumi KOBAYASHI ,  Yoshio OTSUKA

IPC: C30B35/00 ,  C30B29/16

Abstract: A crucible for growing a metal oxide single crystal is provided that can facilitate the balance between the thickness and the strength (hardness) of the constant diameter portion of the crucible and is capable of performing growth of a crystal having a large diameter. The crucible according to the present invention is a crucible for growing a metal oxide single crystal, including a reinforcing belt material provided on an outer periphery of a constant diameter portion of the crucible. It is possible that the crucible has an upper portion having a thickness that is smaller than a thickness of a lower portion of the crucible, and the upper portion of the crucible is the constant diameter portion.

公开(公告)号：US10850365B2

公开(公告)日：2020-12-01

申请号：US15750329

申请日：2016-08-03

Applicant: SHIN-ETSU HANDOTAI CO., LTD. ,  FUJIKOSHI MACHINERY CORP.

Inventor： Michito Sato ,  Junichi Ueno ,  Kaoru Ishii ,  Yosuke Kanai ,  Yuya Nakanishi

IPC: B24B37/00 ,  B24B37/12 ,  B24B37/10 ,  B24B37/20 ,  B24B37/34 ,  B24B57/00 ,  B24B57/02 ,  H01L21/304

Abstract: A polishing apparatus including: a turntable with an attached polishing pad; a polishing head that holds a wafer; a tank that stores a polishing agent; a polishing agent supply mechanism which supplies the stored polishing agent to the polishing pad; a waste liquid receiver which collects the polishing agent flowing from the turntable; and a circulation mechanism which is connected to the waste liquid receiver and supplies the collected polishing agent to the tank, the polishing agent is supplied to the polishing pad from the tank with the polishing agent supply mechanism, the used polishing agent which flows from the turntable is collected by the waste liquid receiver, a surface of the wafer held by the polishing head is rubbed against the pad to polish it while supplying the collected polishing agent to the tank to circulate the polishing agent, and the waste liquid receiver is fixed to the turntable and the waste liquid receiver having a bottom plate and a removable side plate.

公开(公告)号：US10570528B2

公开(公告)日：2020-02-25

申请号：US15470547

申请日：2017-03-27

Applicant: SHINSHU UNIVERSITY ,  Fujikoshi Machinery Corp.

Inventor： Keigo Hoshikawa ,  Takumi Kobayashi ,  Etsuko Ohba ,  Jun Yanagisawa

IPC: C30B11/00 ,  C30B29/16 ,  H01L21/02

Abstract: The apparatus for producing a gallium oxide crystal relating to the invention contains a vertical Bridgman furnace containing: a base body; a cylindrical furnace body having heat resistance disposed above the base body; a lid member occluding the furnace body; a heater disposed inside the furnace body; a crucible shaft provided vertically movably through the base body; and a crucible disposed on the crucible shaft, heated with the heater, the crucible is a crucible containing a Pt-based alloy, the furnace body has an inner wall that is formed as a heat-resistant wall containing plural ring shaped heat-resistant members each having a prescribed height accumulated on each other, and the ring shaped heat-resistant members each contain plural divided pieces that are joined to each other to the ring shape.

公开(公告)号：US20180251908A1

公开(公告)日：2018-09-06

申请号：US15866952

申请日：2018-01-10

Applicant: Fujikoshi Machinery Corp. ,  Shinshu University

Inventor： Keigo HOSHIKAWA ,  Yasuyuki Fujiwara ,  Keiichi Kohama ,  Shinji Nakanishi ,  Takumi Kobayashi ,  Etsuko Ohba

IPC: C30B11/00 ,  C30B29/16 ,  C30B29/30 ,  C22C5/04

CPC classification number: C30B11/002 ,  C22C5/04 ,  C30B11/003 ,  C30B29/16 ,  C30B29/30

Abstract: To provide a single crystal production apparatus that is capable of prolonging the lifetime of a heater, and capable of reducing the cost. A single crystal production apparatus of the present invention is the single crystal production apparatus which produces a single crystal of a metal oxide in an oxidative atmosphere, containing: a base body; a cylindrical furnace body having heat resistance disposed above the base body; a lid member occluding the furnace body; a heater disposed inside the furnace body; a high frequency coil heating the heater through high frequency induction heating; and a crucible heated with the heater, the heater containing a Pt-based alloy and having a zirconia coating on an overall surface of the heater.

公开(公告)号：US20180207768A1

公开(公告)日：2018-07-26

申请号：US15860794

申请日：2018-01-03

Applicant: Fujikoshi Machinery Corp. ,  Kanazawa Institute of Technology

Inventor： Kazutaka SHIBUYA ,  Yoshio NAKAMURA ,  Michio UNEDA ,  Kenichi ISHIKAWA

IPC: B24B53/017 ,  B24B49/12 ,  B24B37/10

CPC classification number: B24B53/017 ,  B24B37/107 ,  B24B49/12

Abstract: The polishing apparatus comprises: a dressing section for dressing a polishing pad; a measuring section for measuring a surface property of the polishing pad; a polishing result measuring section for measuring a polishing result of a work; a storing section for storing correlation data between dressing condition data for dressing the polishing pad, surface property of the polishing pad and polishing results, which are learned by an artificial intelligence; and an input section for inputting an object polishing result. The artificial intelligence performs a first arithmetic process, in which the surface property of the polishing pad corresponding to the object polishing result is inversely estimated on the basis of the correlation data, and a second arithmetic process, in which the corresponding dressing condition is derived on the basis of the surface property of the polishing pad inversely estimated.

公开(公告)号：US20180193975A1

公开(公告)日：2018-07-12

申请号：US15834983

申请日：2017-12-07

Applicant: Fujikoshi Machinery Corp.

Inventor： Masayuki TSUKADA ,  Kazutaka SHIBUYA ,  Takayuki FUSE

IPC: B24B37/32 ,  B24B37/005

Abstract: The polishing head comprises: a head main body part; a carrier being connected to the head main body part; a pressure chamber; a fluid supplying section; a linear motion guide having an outer cylindrical body and a spline shaft, which is provided in the outer cylindrical body and capable of moving in an axial direction thereof, and which is prohibited to rotate with respect to the outer cylindrical body so as to transmit a rotational force to the spline shaft through the outer cylindrical body; and a rotation transmitting plate being provided between a lower end of the spline shaft and an upper face of the carrier, the rotation transmitting plate being capable of tiltably supporting the carrier and transmitting a rotational force of the spline shaft to the carrier.

公开(公告)号：US20160332278A1

公开(公告)日：2016-11-17

申请号：US15224064

申请日：2016-07-29

Applicant: FUJIKOSHI MACHINERY CORP.

Inventor： Kazutaka SHIBUYA ,  Yoshio NAKAMURA

IPC: B24B37/04 ,  H01L21/306

Abstract: The method of the present invention is capable of polishing a high hardness work at high polishing efficiency. The method comprises the steps of: pressing a surface of the work onto a polishing part of a rotating polishing plate; and supplying slurry while performing the pressing step. The method is characterized in that an activated gas, which has been activated by gas discharge, is turned into bubbles and mixed into the slurry.

公开(公告)号：US09017146B2

公开(公告)日：2015-04-28

申请号：US14096226

申请日：2013-12-04

Applicant: Fujikoshi Machinery Corp. ,  National Institute of Advanced Industrial Science and Technology

Inventor： Yoshio Nakamura ,  Yoshio Otsuka ,  Takashi Okubo ,  Kazutaka Shibuya ,  Takayuki Fuse ,  Shiro Hara ,  Sommawan Khumpuang ,  Shinichi Ikeda

IPC: B24B37/34 ,  B24B7/22 ,  B24B37/16 ,  B24B53/017 ,  B24B37/10 ,  B24B37/26 ,  B24B37/30

CPC classification number: B24B7/228 ,  B24B37/105 ,  B24B37/16 ,  B24B37/26 ,  B24B37/30 ,  B24B37/345 ,  B24B53/017

Abstract: The wafer polishing apparatus comprises a polishing plate, a polishing head capable of holding a wafer, and a slurry supplying section. The polishing plate includes: a plurality of concentric polishing zones, each of which has a prescribed width for polishing the wafer and on each of which a polishing cloth is adhered; and a groove for discharging slurry being formed between the polishing zones. A head cleaning section, which cleans the polishing head, or a wafer cleaning section, which cleans the polished wafer, is provided to a center part of the polishing plate and located on the inner side of the innermost polishing zone.

Abstract translation: 晶片抛光装置包括抛光板，能够保持晶片的抛光头和浆料供应部分。 抛光板包括：多个同心抛光区，每个同心抛光区具有用于抛光晶片的规定宽度，并且其中每个抛光区附着有抛光布; 以及用于在抛光区之间形成的用于排出浆料的槽。 清洗抛光头的清洁部分或清洁抛光晶片的晶片清洁部分设置在抛光板的中心部分并位于最内侧抛光区的内侧。

公开(公告)号：US20140154958A1

公开(公告)日：2014-06-05

申请号：US14096226

申请日：2013-12-04

Applicant: National Institute of Advanced Industrial Science and Technology ,  Fujikoshi Machinery Corp.

Inventor： Yoshio NAKAMURA ,  Yoshio OTSUKA ,  Takashi OKUBO ,  Kazutaka SHIBUYA ,  Takayuki FUSE ,  Shiro HARA ,  Sommawan KHUMPUANG ,  Shinichi IKEDA

IPC: B24B7/22 ,  B24B37/16 ,  B24B53/017

CPC classification number: B24B7/228 ,  B24B37/105 ,  B24B37/16 ,  B24B37/26 ,  B24B37/30 ,  B24B37/345 ,  B24B53/017

Abstract: The wafer polishing apparatus comprises a polishing plate, a polishing head capable of holding a wafer, and a slurry supplying section. The polishing plate includes: a plurality of concentric polishing zones, each of which has a prescribed width for polishing the wafer and on each of which a polishing cloth is adhered; and a groove for discharging slurry being formed between the polishing zones. A head cleaning section, which cleans the polishing head, or a wafer cleaning section, which cleans the polished wafer, is provided to a center part of the polishing plate and located on the inner side of the innermost polishing zone.

Abstract translation: 晶片抛光装置包括抛光板，能够保持晶片的抛光头和浆料供应部分。 抛光板包括：多个同心抛光区，每个同心抛光区具有用于抛光晶片的规定宽度，并且其中每个抛光区附着有抛光布; 以及用于在抛光区之间形成的用于排出浆料的槽。 清洗抛光头的清洁部分或清洁抛光晶片的晶片清洁部分设置在抛光板的中心部分并位于最内侧抛光区的内侧。

公开(公告)号：US20140154870A1

公开(公告)日：2014-06-05

申请号：US14087883

申请日：2013-11-22

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  Fujikoshi Machinery Corp.

Inventor： Yoshio NAKAMURA ,  Daizo ICHIKAWA ,  Haruo SUMIZAWA ,  Shiro HARA ,  Sommawan KHUMPUANG ,  Shinichi IKEDA

IPC: H01L21/78

CPC classification number: H01L21/78 ,  H01L21/02005 ,  H01L21/02008

Abstract: A method of manufacturing semiconductor wafers is provided which facilitates formation of orientation flat lines and allows beveling work without problems.The method of manufacturing semiconductor wafers according to the present invention is a method of manufacturing semiconductor wafers, in which a plurality of small-diameter wafers is cut out from a large-diameter semiconductor wafer, the method including: a marking step of forming straight groove-like orientation flat lines by a laser beam so as to cross the respective small-diameter wafers in each row in the large-diameter semiconductor wafer, wherein cutout positions of the small-diameter wafers are aligned in rows in a specific direction, collectively for each of the rows; and a cutting step of cutting out the small-diameter wafers separately from the large-diameter semiconductor wafer by a laser beam after the marking step.

Abstract translation: 提供了制造半导体晶片的方法，其有助于形成取向平线，并且允许斜切加工没有问题。 根据本发明的制造半导体晶片的方法是一种半导体晶片的制造方法，其中从大直径半导体晶片切出多个小直径晶片，该方法包括：标记步骤，形成直槽 通过激光束的方位扁平线与大直径半导体晶片中的每一行中的各个小直径晶片交叉，其中小直径晶片的切割位置沿特定方向排成一行，共同为 每行 以及在标记步骤之后通过激光束与大直径半导体晶片分开切割小直径晶片的切割步骤。