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公开(公告)号:US20220196390A1
公开(公告)日:2022-06-23
申请号:US17604553
申请日:2020-04-09
Applicant: Fujikoshi Machinery Corp.
Inventor: Chihiro MIYAGAWA , Kazutaka SHIBUYA , Kiyohito AOKI
IPC: G01B11/06 , H01L21/304 , G01N21/95 , H01L21/66
Abstract: A non-contact-type apparatus for measuring wafer thickness includes a monolithic-type wavelength sweeping semiconductor laser light source having a laser source, a laser control unit that controls the laser source, and a processor to control the laser source to oscillate laser light having a wavelength that changes with a setting profile relative to time; an optical system that guides and emits the laser light onto a wafer; a detection unit that detects an interference light signal of reflected light; an A/D converter that converts the interference light signal detected by the detection unit into a digital signal; and a calculation unit that calculates a thickness of the wafer by analyzing the digital signal from the A/D converter. The processor causes the laser control unit to operate with a clock signal, and to oscillate laser light that performs wavelength-sweeping with the setting profile relative to the time, from the laser source. The A/D converts the interference light signal by generating a sampling clock in synchronization with the clock signal or directly using the clock signal as a sampling clock.
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公开(公告)号:US20170301573A1
公开(公告)日:2017-10-19
申请号:US15470441
申请日:2017-03-27
Applicant: Fujikoshi Machinery Corp.
Inventor: Kazutaka SHIBUYA , Yoshio NAKAMURA
CPC classification number: H01L21/67219 , B24B37/04 , B24B57/02 , H01J37/3244 , H01J37/3255 , H01J37/32568 , H01J2237/334 , H01L21/6708
Abstract: A nozzle according to the invention includes a liquid flow passage through which a liquid flows, a gas flow passage through which a gas flows, the gas flow passage communicating with the liquid flow passage and feeding the gas to the liquid flow passage, and a plasma generating mechanism for generating plasma in the gas fed from the gas flow passage to the liquid flow passage, in which the plasma generating mechanism includes a first electrode provided so as to be exposed to an inside of the liquid flow passage, a second electrode provided so as not to be exposed to the inside of the liquid flow passage and so as to be exposed to an inside of the gas flow passage, and a power source for applying a predetermined voltage across the first electrode and the second electrode, and in which the liquid with which the gas including the generated plasma is mixed as bubbles having a predetermined diameter is spouted.
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公开(公告)号:US20150262833A1
公开(公告)日:2015-09-17
申请号:US14637546
申请日:2015-03-04
Applicant: FUJIKOSHI MACHINERY CORP.
Inventor: Kazutaka SHIBUYA , Yoshio NAKAMURA
IPC: H01L21/306 , C23F1/12 , C23F1/14 , H01L21/67 , C23F1/08
CPC classification number: B24B37/04 , B24B57/02 , C23F1/08 , C23F1/12 , C23F1/14 , H01J37/32055 , H01J37/32073 , H01J37/32348 , H01L21/02024 , H01L21/30625 , H01L21/67075 , H01L21/67092 , H01L29/1602 , H01L29/1608 , H01L29/2003
Abstract: The method of the present invention is capable of polishing a high hardness work at high polishing efficiency. The method comprises the steps of: pressing a surface of the work onto a polishing part of a rotating polishing plate; and supplying slurry while performing the pressing step. The method is characterized in that an activated gas, which has been activated by gas discharge, is turned into bubbles and mixed into the slurry.
Abstract translation: 本发明的方法能够以高抛光效率抛光高硬度的工件。 该方法包括以下步骤:将工件的表面压在旋转的抛光板的抛光部分上; 并在进行压制步骤时供给浆料。 该方法的特征在于,已经通过气体排出而活化的活性气体变成气泡并混合到浆料中。
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公开(公告)号:US20170190018A1
公开(公告)日:2017-07-06
申请号:US15394274
申请日:2016-12-29
Inventor: Kazutaka SHIBUYA , Jun YANAGISAWA , Yoshio NAKAMURA , Michio UNEDA , Kenichi ISHIKAWA
IPC: B24B37/20 , B24B53/06 , B24B53/08 , B24B37/005
CPC classification number: B24B37/20 , B24B37/005 , B24B37/042 , B24B49/18 , B24B53/007 , B24B53/017 , B24B53/06 , B24B53/08
Abstract: The method of the present invention comprises the steps of: previously obtaining correlation data between surface properties of the polishing pad dressed under a plurality of stages of dressing conditions and polishing effects of the work polished by the polishing pad dressed under the dressing conditions; determining an assumed dressing condition capable of achieving an object polishing effect from the correlation data; dressing the polishing pad under the assumed dressing condition determined; polishing the work; cleaning the polishing pad which has been used for polishing the work; and measuring a surface property of the cleaned polishing pad.
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公开(公告)号:US20170157735A1
公开(公告)日:2017-06-08
申请号:US15370670
申请日:2016-12-06
Applicant: Fujikoshi Machinery Corp. , National Institute of Advanced Industrial Science and Technology
Inventor: Masayuki TSUKADA , Kazutaka SHIBUYA , Takayuki FUSE , Yoshio NAKAMURA , Shiro Hara
IPC: B24B37/34 , H01L21/306 , B24B37/20 , H01L21/67
Abstract: The work processing apparatus of the present invention comprises: a processing section for processing or treating a work; and a liquid chemical supplying section for supplying a liquid chemical to the processing section. The liquid chemical supplying section includes: a plurality of liquid chemical bags for storing the liquid chemical; a bag holding part in which the liquid chemical bags are attached and held; and a liquid feeding part, to which the liquid chemical bags are detachably connected, for feeding the liquid chemical from the liquid chemical bags to the processing section. Each of the liquid chemical bags is produced by overlapping flexible resin sheets with each other and welding their edge parts to form into a bag. Each of the liquid chemical bags has a port part communicating with an outside. A joint with a valve is attached to each of the port parts.
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公开(公告)号:US20180207768A1
公开(公告)日:2018-07-26
申请号:US15860794
申请日:2018-01-03
Inventor: Kazutaka SHIBUYA , Yoshio NAKAMURA , Michio UNEDA , Kenichi ISHIKAWA
IPC: B24B53/017 , B24B49/12 , B24B37/10
CPC classification number: B24B53/017 , B24B37/107 , B24B49/12
Abstract: The polishing apparatus comprises: a dressing section for dressing a polishing pad; a measuring section for measuring a surface property of the polishing pad; a polishing result measuring section for measuring a polishing result of a work; a storing section for storing correlation data between dressing condition data for dressing the polishing pad, surface property of the polishing pad and polishing results, which are learned by an artificial intelligence; and an input section for inputting an object polishing result. The artificial intelligence performs a first arithmetic process, in which the surface property of the polishing pad corresponding to the object polishing result is inversely estimated on the basis of the correlation data, and a second arithmetic process, in which the corresponding dressing condition is derived on the basis of the surface property of the polishing pad inversely estimated.
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公开(公告)号:US20180193975A1
公开(公告)日:2018-07-12
申请号:US15834983
申请日:2017-12-07
Applicant: Fujikoshi Machinery Corp.
Inventor: Masayuki TSUKADA , Kazutaka SHIBUYA , Takayuki FUSE
IPC: B24B37/32 , B24B37/005
Abstract: The polishing head comprises: a head main body part; a carrier being connected to the head main body part; a pressure chamber; a fluid supplying section; a linear motion guide having an outer cylindrical body and a spline shaft, which is provided in the outer cylindrical body and capable of moving in an axial direction thereof, and which is prohibited to rotate with respect to the outer cylindrical body so as to transmit a rotational force to the spline shaft through the outer cylindrical body; and a rotation transmitting plate being provided between a lower end of the spline shaft and an upper face of the carrier, the rotation transmitting plate being capable of tiltably supporting the carrier and transmitting a rotational force of the spline shaft to the carrier.
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公开(公告)号:US20160332278A1
公开(公告)日:2016-11-17
申请号:US15224064
申请日:2016-07-29
Applicant: FUJIKOSHI MACHINERY CORP.
Inventor: Kazutaka SHIBUYA , Yoshio NAKAMURA
IPC: B24B37/04 , H01L21/306
Abstract: The method of the present invention is capable of polishing a high hardness work at high polishing efficiency. The method comprises the steps of: pressing a surface of the work onto a polishing part of a rotating polishing plate; and supplying slurry while performing the pressing step. The method is characterized in that an activated gas, which has been activated by gas discharge, is turned into bubbles and mixed into the slurry.
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公开(公告)号:US20140154958A1
公开(公告)日:2014-06-05
申请号:US14096226
申请日:2013-12-04
Applicant: National Institute of Advanced Industrial Science and Technology , Fujikoshi Machinery Corp.
Inventor: Yoshio NAKAMURA , Yoshio OTSUKA , Takashi OKUBO , Kazutaka SHIBUYA , Takayuki FUSE , Shiro HARA , Sommawan KHUMPUANG , Shinichi IKEDA
IPC: B24B7/22 , B24B37/16 , B24B53/017
CPC classification number: B24B7/228 , B24B37/105 , B24B37/16 , B24B37/26 , B24B37/30 , B24B37/345 , B24B53/017
Abstract: The wafer polishing apparatus comprises a polishing plate, a polishing head capable of holding a wafer, and a slurry supplying section. The polishing plate includes: a plurality of concentric polishing zones, each of which has a prescribed width for polishing the wafer and on each of which a polishing cloth is adhered; and a groove for discharging slurry being formed between the polishing zones. A head cleaning section, which cleans the polishing head, or a wafer cleaning section, which cleans the polished wafer, is provided to a center part of the polishing plate and located on the inner side of the innermost polishing zone.
Abstract translation: 晶片抛光装置包括抛光板,能够保持晶片的抛光头和浆料供应部分。 抛光板包括:多个同心抛光区,每个同心抛光区具有用于抛光晶片的规定宽度,并且其中每个抛光区附着有抛光布; 以及用于在抛光区之间形成的用于排出浆料的槽。 清洗抛光头的清洁部分或清洁抛光晶片的晶片清洁部分设置在抛光板的中心部分并位于最内侧抛光区的内侧。
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