公开(公告)号：US20240018686A1

公开(公告)日：2024-01-18

申请号：US18351402

申请日：2023-07-12

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven

Inventor： Yuanyuan Shi ,  Pierre Morin ,  Benjamin Groven ,  Vladislav Voronenkov

IPC: C30B25/04 ,  C30B29/46

CPC classification number: C30B25/04 ,  C30B29/46

Abstract: In one aspect, a template for growing a crystal of a two-dimensional material can include a flat surface for growing the crystal thereon, a first wall on the flat surface, and a second wall on the flat surface. The first and the second walls can meet at a corner to form an angle having an opening that is adapted to align with the crystal structure of the crystal with a tolerance of up to 5°. Each of the first and second walls can have a length of from 5 nm to 1000 nm and a height of from 0.6 nm to 2 nm.

公开(公告)号：US20230413504A1

公开(公告)日：2023-12-21

申请号：US18335310

申请日：2023-06-15

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven

Inventor： Hsiao-Hsuan Liu ,  Shairfe Muhammad Salahuddin ,  Boon Teik Chan

IPC: H10B10/00

CPC classification number: H10B10/125

Abstract: A bit cell for a Static Random-Access Memory (SRAM) is provided that includes first and second sets of transistors. Each set of transistors includes a respective pass-gate transistor and a respectively stacked complementary transistor pair of an upper transistor and a lower transistor. A source/drain terminal of a lower transistor of each set of transistors is connected to a respective first power supply extending in a first power supply track arranged below the lower transistor, whereas a source/drain terminal of an upper transistor of each set of transistors is connected to a respective second power supply extending in a second power supply track arranged above the upper transistor.

公开(公告)号：US20230382758A1

公开(公告)日：2023-11-30

申请号：US18325823

申请日：2023-05-30

Applicant: IMEC VZW

Inventor： Michiel Jan van Setten ,  Geoffrey Pourtois ,  Hendrik F.W. Dekkers ,  Gouri Sankar Kar

IPC: C01G30/00 ,  H01L29/786

CPC classification number: C01G30/005 ,  H01L29/78693 ,  C01P2002/02

Abstract: Mixed metal oxides and methods for making the mixed metal oxides are disclosed. A mixed metal oxide includes metal or metalloid elements including 0.50 to 0.90 parts by mole Mg, 0.05 to 0.30 parts by mole Al, 0.01 to 0.20 parts by mole Sb, and 0.00 to 0.31 parts by mole of other elements selected from metals and metalloids. The sum of all parts by mole of Mg, Al, Sb, and the other elements selected from metals and metalloids may amount to about 1.00. The mixed metal oxide additionally includes oxygen, and less than 0.01 parts by mole of non-metallic and non-metalloid impurities.

公开(公告)号：US11822118B2

公开(公告)日：2023-11-21

申请号：US17851647

申请日：2022-06-28

Applicant: IMEC VZW ,  Universiteit Gent

Inventor： Wim Bogaerts ,  Wouter Jan Westerveld ,  Roelof Jansen

IPC: G02B6/12 ,  G02B6/42

CPC classification number: G02B6/12019 ,  G02B6/4215

Abstract: An integrated photonic device for wavelength division multiplexing comprises: a wavelength-splitting/combining component configured to be re-used for both splitting a single signal to be split, wherein the signal to be split comprises plural wavelengths, to plural split signals, wherein each of the plural split signals is related to a unique wavelength band, and combining plural signals to be combined, wherein each of the plural signals to be combined is related to a unique wavelength band, to a single combined signal, wherein the wavelength-splitting/combining component comprises at least one output channel for providing an output signal and at least one response channel for receiving a response input signal from a light interaction induced by the output signal, wherein the output channel and the response channel are connected to different ports of the wavelength-splitting/combining component.

公开(公告)号：US11819864B2

公开(公告)日：2023-11-21

申请号：US17988874

申请日：2022-11-17

Applicant: IMEC VZW ,  UNIVERSITEIT HASSELT

Inventor： Rachith Shanivarasanthe Nithyananda Kumar ,  Wim Deferme

IPC: B05B17/06 ,  B05D1/02

CPC classification number: B05B17/06 ,  B05D1/02

Abstract: A method for applying thin film material onto a substrate comprises: forming microdroplets of a solvent and a solute material forming the thin film material; depositing the microdroplets on an upper surface of a micro-structured mesh, wherein the microdroplets are deposited to allow coalescing into droplets extending into the micro-structured mesh; and arranging a surface of the substrate in close relation to a bottom surface of the micro-structured mesh such that a capillary force draws liquid of the droplets onto the surface of the substrate, whereby forced dynamic wetting of the surface of the substrate is provided to form a liquid film on the surface of the substrate.

公开(公告)号：US20230352615A1

公开(公告)日：2023-11-02

申请号：US18065918

申请日：2022-12-14

Applicant: IMEC VZW

Inventor： Pieter Bex ,  Alain Phommahaxay

IPC: H01L33/00 ,  H01L25/075

CPC classification number: H01L33/005 ,  H01L25/0753 ,  H01L33/486 ,  H01L2933/0066

Abstract: The present disclosure provides that a plurality of dies are temporarily attached to a rigid transfer substrate through a light-releasable temporary bonding layer. The transfer substrate is a rigid substrate that is transparent for the type of light that is capable of releasing the dies, i.e. the type of light that is capable of removing or releasing the light-releasable layer. This may be laser light or other visible or invisible light such as UV, IR or LED light. The assembly comprising the transfer substrate and the dies is positioned relative to a carrier substrate with the dies facing respective interface areas on a surface of the carrier substrate. By illuminating a die through the back side of the transfer substrate, the die is released and transferred to the carrier substrate. The method is suitable for bonding dies to a carrier without any mechanical handling of individual dies.

公开(公告)号：US11793085B2

公开(公告)日：2023-10-17

申请号：US17445557

申请日：2021-08-20

Applicant: IMEC vzw

Inventor： Davide Francesco Crotti ,  Kevin Garello

IPC: H01L51/50 ,  H10N50/01 ,  H10B61/00 ,  H10N50/80

CPC classification number: H10N50/01 ,  H10B61/00 ,  H10N50/80

Abstract: According to an aspect, there is provided a method of forming a magnetic tunneling junction (MTJ) device, including: forming a layer stack including an MTJ layer structure and a spin-orbit torque (SOT) layer below the MTJ layer structure; forming a first etch mask over the layer stack, the first etch mask including a first mask line extending in a first horizontal direction; patterning the layer stack to form an MTJ line extending in the first horizontal direction, the patterning including etching while the first etch mask masks the layer stack, and stopping etching on or above the SOT-layer; forming sidewall spacers on one or both sides of the MTJ line; while the sidewall spacers mask the SOT-layer, etching the SOT-layer to form a patterned layer stack including the MTJ line and a first patterned SOT-layer; forming a second etch mask over the patterned layer stack, the second etch mask including a second mask line extending in a second horizontal direction across the MTJ line; and patterning the patterned layer stack to form a twice patterned SOT-layer, the twice patterned SOT-layer including an SOT-line extending in the second horizontal direction, and to form an MTJ pillar on the SOT-line, the patterning including etching while the second etch mask masks the patterned layer stack.

公开(公告)号：US20230320619A1

公开(公告)日：2023-10-12

申请号：US18031668

申请日：2021-10-14

Applicant: IMEC VZW

Inventor： Ahmed TAHER ,  Benjamin JONES ,  Peter PEUMANS

IPC: A61B5/08 ,  A61B5/091 ,  G01N1/22

CPC classification number: A61B5/082 ,  A61B5/091 ,  G01N1/2208 ,  G01N2001/2244

Abstract: A collecting device (200) for collecting airborne particles comprises: a first (202) and second layer (220) spaced apart for forming a particle collection chamber (240) therebetween, wherein inlets (210) extend through the first layer (202) for transporting a flow of air into the particle collection chamber (240); wherein ends (214) of the inlets (210) face a first surface (222) of the second layer (220) for capturing airborne particles by impaction; wherein outlets (230) extend through the second layer (220) for transporting the flow of air out of the particle collection chamber (240); wherein the inlets (210) and outlets (230) are staggered such that the center axes of the inlets (210) and outlets (230) are displaced from each other; wherein the flow of air experiences a pressure drop lower than 3 kPa at a flow rate of 0.5 liters per second, when the flow of air passes the collecting device (200).

公开(公告)号：US11769750B2

公开(公告)日：2023-09-26

申请号：US17387617

申请日：2021-07-28

Applicant: IMEC VZW

Inventor： Joeri De Vos ,  Eric Beyne

IPC: H01L23/538 ,  H01L23/00 ,  H01L27/06

CPC classification number: H01L24/80 ,  H01L23/5385 ,  H01L23/5386 ,  H01L27/0688

Abstract: A substrate, assembly and method for bonding and electrically interconnecting substrates are provided. According to the method, two substrates are provided, each comprising metal contact structures that are electrically isolated from each other by a bonding layer of dielectric material. Openings are produced in the bonding layer, the openings lying within the surface area of the respective contact structures, exposing the contact material of the structures at the bottom of the openings. Then a layer of conductive material is deposited, filling the openings, after which the material is planarized, removing it from the surface of the bonding layer and leaving a recessed contact patch in the openings. The substrates are then aligned, brought into contact, and bonded by applying an annealing step at a temperature suitable for causing thermal expansion of the contact structures. Deformation of the conductive material of the contact structures through creep pushes the material into the openings from the bottom up, thereby bringing the contact patches into mutual and conductive contact.

公开(公告)号：US20230299478A1

公开(公告)日：2023-09-21

申请号：US18185181

申请日：2023-03-16

Applicant: IMEC VZW

Inventor： Yang Zhang ,  Jan Craninckx ,  Pierre Wambacq ,  Giuseppe Gramegna

IPC: H01Q3/34 ,  H01P1/213 ,  H01P5/12 ,  H04B7/0408

CPC classification number: H01Q3/34 ,  H01P1/213 ,  H01P5/12 ,  H04B7/0408

Abstract: A phased array transceiver element comprises a local oscillator stage for generating beamformed in-phase and quadrature local oscillator signals, the local oscillator stage comprising a phase shifter connectable to a reference frequency source and applying a first phase shift; a primary frequency multiplier input from the phase shifter and applying a primary frequency multiplication factor; a phase-splitting arrangement input from the primary frequency multiplier and having a first output and a second output, the phase-splitting arrangement applying a second phase shift at the first output and a third phase shift at the second output; a first secondary frequency multiplier input from the first output of the phase-splitting arrangement, having an output for the in-phase local oscillator signal, and applying a secondary frequency multiplication factor; and a second secondary frequency multiplier input from the second output of the phase-splitting arrangement, having an output for the quadrature local oscillator signal, and applying the secondary frequency multiplication factor.