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公开(公告)号：US06838573B1
公开(公告)日：2005-01-04
申请号：US10768370
申请日：2004-01-30
CPC分类号： C07C251/08 , C07C49/92 , C23C16/18
摘要： This invention relates to copper(+1)(β-diketonate)(L) and related copper complexes such as copper (+1)(β-ketoiminate)(L) represented by the formula: wherein X represents O or NR9, R1 and R3 are each independently comprised of the group C1-8 alkyl, C1-8 fluoroalkyl, aryl, C1-8 alkoxy, and C1-8 alkyl ethers and R2 is H, C1-8 alkyl, C1-8 alkoxy, and halogen, R9 is C1-8 alkyl, C1-8 fluoroalkyl, phenyl, alkylphenyl, trialkylsilyl, and L represents a ligand having the structure: (R4)(R5)C═(R6)(R7) or R4—C≡C—R7 wherein R4, is comprised of the group C1-8 alkanol, C1-8 alkoxyalkanol, C1-8 unsaturated alkoxyalkanol, trialkylsilanol, C1-8 aalkylamine, phenylamine; R5, R6, and R7 are comprised of the group H, C1-8 alkyl, triakylsilyl, alkoxy or phenyl.
摘要翻译： 本发明涉及由下式表示的铜（+1）（β-二酮）（L）和相关的铜配合物如铜（+1）（β-酮酰亚胺）（L））：其中X代表O或NR9，R1和 R 3各自独立地由C 1-8烷基，C 1-8氟烷基，芳基，C 1-8烷氧基和C 1-8烷基醚组成，R 2是H，C 1-8烷基，C 1-8烷氧基和卤素，R 9 C 1-8烷基，C 1-8氟烷基，苯基，烷基苯基，三烷基甲硅烷基，L表示具有以下结构的配位体：其中R 4由C 1-8链烷醇，C 1-8烷氧基烷醇，C 1-8不饱和烷氧基烷醇， 三烷基硅烷醇，C 1-8烷基胺，苯胺; R5，R6和R7由H，C1-8烷基，三烷基甲硅烷基，烷氧基或苯基组成。
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42.发明授权公开(公告)号：US06818783B2
公开(公告)日：2004-11-16
申请号：US10323480
申请日：2002-12-19
IPC分类号： C07F108
CPC分类号： C23C16/45553 , C07F1/005 , C07F1/08 , C07F5/02 , C07F7/10
摘要： This invention is directed to a group of novel homologous eight membered ring compounds having a metal, such as copper, reversibly bound in the ring and containing carbon, nitrogen, silicon and/or other metals. A structural representation of the compounds of this invention is shown below: wherein M and M′ are each a metal such as Cu, Ag, Au and Ir; X and X′ can be N or O; Y and Y′ can be Si, C; Sn, Ge, Al, or B; and Z and Z′ can be C, N, or O. Substituents represented by R1, R2, R3, R4, R5, R6, R1′, R2′, R3′, R4′, R5′, and R6′ will vary depending on the ring atom to which they are attached. This invention is also directed to depositing metal and metal-containing films on a substrate, under ALD or CVD conditions, using the above novel compounds as precursors.
摘要翻译： 本发明涉及一组具有可逆地结合在环中并含有碳，氮，硅和/或其它金属的金属如铜的新型同源八元环化合物。 本发明化合物的结构表示如下：其中M和M'各自为金属如Cu，Ag，Au和Ir; X和X'可以是N或O; Y和Y'可以是Si，C; Sn，Ge，Al或B; Z，Z'可以是C，N或O.取代基由R1，R2，R3，R4，R5，R6，R1'，R2'，R3'，R4'，R5'和R6' 在它们所连接的环原子上。 本发明还涉及使用上述新型化合物作为前体，在ALD或CVD条件下在基底上沉积金属和含金属膜。
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43.发明授权Deposition and annealing of multicomponent ZrSnTi and HfSnTi oxide thin films using solventless liquid mixture of precursors 失效使用无溶剂的前体液体混合物沉积和退火多组分ZrSnTi和HfSnTi氧化物薄膜公开(公告)号：US06500499B1
公开(公告)日：2002-12-31
申请号：US09522634
申请日：2000-03-10
申请人： Yoshihide Senzaki , Arthur Kenneth Hochberg , David Allen Roberts , John Anthony Thomas Norman , Glenn Baldwin Alers , Robert McLemore Fleming
发明人： Yoshihide Senzaki , Arthur Kenneth Hochberg , David Allen Roberts , John Anthony Thomas Norman , Glenn Baldwin Alers , Robert McLemore Fleming
IPC分类号： B05D306
CPC分类号： C23C16/4481 , C23C16/40
摘要： Complex mixed metal containing thin films can be deposited by CVD from liquid mixtures of metal complexes without solvent by direct liquid injection and by other precursor dispersing method such as aerosol delivery with subsequent annealing to improve electrical properties of the deposited films. This process has potential for commercial success in microelectronics device fabrication of dielectrics, ferroelectrics, barrier metals/electrodes, superconductors, catalysts, and protective coatings. Application of this process, particularly the CVD of ZrSnTiOx (zirconium tin titanate, or ZTT) and HfSnTiOx (hafnium tin titanate, or HTT) thin films has been studied successfully.
摘要翻译： 通过CVD从金属络合物的液体混合物中通过直接液体注入和通过其它前体分散方法如气溶胶递送以及随后的退火以改善沉积膜的电性能，可以通过CVD沉积复杂的含金属的薄膜。 该方法在电介质，铁电体，阻挡金属/电极，超导体，催化剂和保护涂层的微电子器件制造中具有商业成功的潜力。 已经研究了该方法的应用，特别是ZrSnTiOx（锆钛酸锌或ZTT）和HfSnTiOx（钛酸铪钛酸盐或HTT）薄膜的CVD。
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公开(公告)号：US08703103B2
公开(公告)日：2014-04-22
申请号：US13016127
申请日：2011-01-28
IPC分类号： A61B5/055
CPC分类号： H01L21/28556 , C07D233/54
摘要： Sterically hindered imidazole ligands are described, along with their synthesis, which are capable of coordinating to Group 2 metals, such as: calcium, magnesium, strontium, in an eta-5 coordination mode which permits the formation of monomeric or dimeric volatile complexes.A compound comprising one or more polysubstituted imidazolate anions coordinated to a metal selected from the group consisting of barium, strontium, magnesium, radium or calcium or mixtures thereof. Alternatively, one anion can be substituted with and a second non-imidazolate anion.Synthesis of the novel compounds and their use to form BST films is also contemplated.
摘要翻译： 描述了咪唑配位体以及它们的合成，它们能够以能够形成单体或二聚挥发性络合物的eta-5配位模式配合第2族金属，例如：钙，镁，锶。 包含与选自钡，锶，镁，镭或钙的金属或其混合物配位的一种或多种多取代咪唑酸盐阴离子的化合物。 或者，一个阴离子可以被第二个非咪唑酸阴离子取代。 还考虑了新型化合物的合成及其用于形成BST膜的用途。
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公开(公告)号：US08592606B2
公开(公告)日：2013-11-26
申请号：US12950352
申请日：2010-11-19
摘要： The present invention is related to a family of liquid group 4 precursors represented by the formula: (pyr*)M(OR1)(OR2)(OR3) wherein pyr* is an alkyl substituted pyrrolyl, wherein M is group 4 metals include Ti, Zr, and Hf; wherein R1-3 can be same or different and selected from group consisting of linear or branched C1-6 alkyls; preferably C1-3 alkyls; R4 is selected from the group consisting of C1-6 alkyls, preferably branched C3-5 alkyls substituted at 2, 5 positions to prevent the pyrrolyl coordinated to the metal center in η1 fashion; n=2, 3, 4. Most preferably the invention is directed to (2,5-di-tert-butylpyrrolyl)(tris(ethoxy)titanium, (2,5-di-tert-amylpyrrolyl)(tris(ethoxy)titanium, and (2,5-di-tert-amylpyrrolyl)(tris(iso-propoxy)titanium. The invention is also directed to (cyclopentadienyl)(2,5-di-methylpyrrolyl)(bis(ethoxy))titanium. Deposition methods using these compounds are also contemplated.
摘要翻译： 本发明涉及一种由式（pyr *）M（OR1）（OR2）（OR3）表示的液体组4前体，其中pyr *是烷基取代的吡咯基，其中M是第4族金属包括Ti， Zr和Hf; 其中R1-3可以相同或不同，并且选自直链或支链C 1-6烷基; 优选C 1-3烷基; R4选自C1-6烷基，优选在2,5位取代的支链C3-5烷基，以防止以eta1方式与金属中心配位的吡咯啉; 最优选本发明涉及（2,5-二叔丁基吡咯基）（三（乙氧基）钛，（2,5-二叔戊基吡咯基）（三（乙氧基）钛 本发明还涉及（环戊二烯基）（2,5-二甲基吡咯基）（双（乙氧基））钛。沉积方法 也考虑使用这些化合物。
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公开(公告)号：US20130066082A1
公开(公告)日：2013-03-14
申请号：US13418747
申请日：2012-03-13
IPC分类号： C07F7/28 , C23C16/448 , C23C16/44
CPC分类号： C07F17/00 , C23C16/18 , C23C16/405 , C23C16/45553
摘要： Organometallic compounds suitable for use as vapor phase deposition precursors for metal-containing films are provided. Methods of depositing metal-containing films using certain organometallic precursors are also provided. Such metal-containing films are particularly useful in the manufacture of electronic devices.
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公开(公告)号：US08313807B2
公开(公告)日：2012-11-20
申请号：US12535192
申请日：2009-08-04
IPC分类号： C23C16/00 , C07C257/00 , C09B67/00
CPC分类号： C07C211/14 , C07C217/40 , C07C225/06 , C23C16/18
摘要： The present invention is directed to high coordination sphere Group 2 metal β-diketiminate compositions, such as bis(N-(2,2-methoxyethyl)-4-(2,2-methoxyethylimino)-2-penten-2-aminato) barium; and the deposition of the metals of such metal ligand compositions by chemical vapor deposition, pulsed chemical vapor deposition, molecular layer deposition or atomic layer deposition to produce Group 2 metal containing films, such as barium strontium titanate films or strontium titanate films or barium doped lanthanate as high k materials for electronic device manufacturing.
摘要翻译： 本发明涉及高配位球2族金属和二铬酸盐组合物，例如双（N-（2,2-甲氧基乙基）-4-（2,2-甲氧基乙基亚氨基）-2-戊烯-2-氨基） 钡; 以及通过化学气相沉积，脉冲化学气相沉积，分子层沉积或原子层沉积沉积这种金属配体组合物的金属，以产生第二族金属含有膜，例如钛酸钡锶膜或钛酸锶薄膜或掺杂钡的镧系元素 作为电子设备制造的高k材料。
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48.发明授权Process for selectively depositing copper thin films on substrates with copper and ruthenium areas via vapor deposition 有权通过气相沉积在铜和钌区域的基板上选择性沉积铜薄膜的工艺公开(公告)号：US08283485B2
公开(公告)日：2012-10-09
申请号：US12139585
申请日：2008-06-16
IPC分类号： H01L21/443
CPC分类号： H01L21/28556 , C23C16/04 , C23C16/18 , H01L21/28562 , H01L21/76843 , H01L21/76868 , H01L21/76871 , H01L21/76877
摘要： A process for preparing a multi-layer substrate is described herein. In one embodiment, the process provides a multi-layer substrate comprising a first layer and a second layer where the process comprises the steps of providing the first layer comprising a barrier area and a copper area; and depositing the second layer comprising copper onto the first layer wherein the depositing provides the second layer comprising a first thickness ranging from about 20 Angstroms to about 2,000 Angstroms onto the barrier area and a second thickness ranging from about 0 Angstroms to about 1,000 Angstroms onto the copper area in the first layer wherein the first thickness is greater than the second thickness.
摘要翻译： 本文描述了制备多层基底的方法。 在一个实施例中，该方法提供了包括第一层和第二层的多层衬底，其中该方法包括提供包括阻挡区域和铜区域的第一层的步骤; 以及将包含铜的所述第二层沉积到所述第一层上，其中所述沉积提供所述第二层，所述第二层包括从所述阻挡区域上的约20埃到约2000埃的第一厚度，以及从约0埃到约1,000埃的第二厚度 第一层中的铜区域，其中第一厚度大于第二厚度。
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公开(公告)号：US08143431B2
公开(公告)日：2012-03-27
申请号：US12126333
申请日：2008-05-23
CPC分类号： H05K3/105 , C09D11/30 , H05K3/125 , H05K2203/013 , H05K2203/1105 , H05K2203/121
摘要： Novel copper alkoxide compound based ink formulations and their chemical syntheses are disclosed. The method of using the ink formulations to print conducting copper metal lines with standard ink jet printing and curing at
摘要翻译： 公开了新的烷基酚化合物基油墨配方及其化学合成。 还公开了使用油墨配方在<150℃下用标准喷墨印刷和固化印刷导电铜金属线的方法。
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公开(公告)号：US07919409B2
公开(公告)日：2011-04-05
申请号：US12192603
申请日：2008-08-15
申请人： Hansong Cheng , Xinjian Lei , Daniel P. Spence , John Anthony Thomas Norman , David Allen Roberts , Bo Han , Chenggang Zhou , Jinping Wu
发明人： Hansong Cheng , Xinjian Lei , Daniel P. Spence , John Anthony Thomas Norman , David Allen Roberts , Bo Han , Chenggang Zhou , Jinping Wu
IPC分类号： H01L21/285
CPC分类号： H01L21/76846
摘要： We have used the state-of-the-art computational chemistry techniques to identify adhesion promoting layer materials that provide good adhesion of copper seed layer to the adhesion promoting layer and the adhesion promoting layer to the barrier layer. We have identified factors responsible for providing good adhesion of copper layer on various metallic surfaces and circumstances under which agglomeration of copper film occur. Several promising adhesion promoting layer materials based on chromium alloys have been predicted to be able to significantly enhance the adhesion of copper films. Chromium containing complexes of a polydentate β-ketoiminate have been identified as chromium containing precursors to make the alloys with chromium.
摘要翻译： 我们使用最先进的计算化学技术来鉴别提供铜种子层对粘合促进层和粘附促进层对阻挡层的良好粘附性的粘附促进层材料。 我们已经确定了在各种金属表面上提供铜层的良好附着力以及发生铜膜附聚的情况的因素。 已经预测了几种基于铬合金的有希望的粘合促进层材料能够显着增强铜膜的粘附性。 已经鉴定了多齿和重铬酸盐的含铬络合物是含铬的前体，以使铬合金化。
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